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1. 发明公开

KR1020080000180A 액정 패널의 화상 왜곡 분석 방법 无效
标题翻译：分析液晶显示失真的方法
公开(公告)号：KR1020080000180A
公开(公告)日：2008-01-02
申请号：KR1020060057768
申请日：2006-06-27
申请人： 인하대학교 산학협력단
发明人： 원태영 , 김중식
IPC分类号： G09G3/36 , G02F1/13
CPC分类号： G06F17/5009 , G01N2015/1025 , G09G3/006
摘要： A method of analyzing the distortion of images in an LCD(Liquid Crystal Display) device is provided to reduce manufacturing costs by analyzing the characteristics of the LCD device based on material information. To analyze the distortion of image in a liquid crystal panel, the distribution of liquid crystal is calculated. Voltage signal delay is calculated in an applied voltage. Then, the distortion of image is calculated. Impurity concentration is interpolated using net structure information. A Gauss quadrature point is separated from elements divided from nodal points. The vertex lists of polygon to be executed a boolean operation have a linked list type data structure.
摘要翻译：提供一种分析LCD（液晶显示器）装置中的图像失真的方法，以通过基于材料信息分析LCD装置的特性来降低制造成本。为了分析液晶面板中图像的失真，计算出液晶的分布。在施加的电压下计算电压信号延迟。然后，计算图像的失真。使用净结构信息对杂质浓度进行插值。高斯正交点与从节点分开的元素分离。要执行布尔运算的多边形的顶点列表具有链表列表类型的数据结构。

2. 发明公开

KR1020080073392A 나노미터 스케일의 전계효과트랜지스터에 대한 문턱전압모델링 방법 无效
标题翻译：纳米尺度场效应晶体管的建模方法
公开(公告)号：KR1020080073392A
公开(公告)日：2008-08-11
申请号：KR1020070011929
申请日：2007-02-06
申请人： 인하대학교 산학협력단
发明人： 이종호 , 최병길 , 원태영 , 김중식
IPC分类号： G06F17/50 , H01L29/772 , G06F17/00 , B82Y35/00
CPC分类号： G06F17/5009 , H01L29/7831 , H01L2029/7858
摘要： A method for modeling threshold voltage of a nanometer scale FET(Field Effect Transistor) is provided to estimate the threshold voltage of a bulk FinFET precisely by considering corner effect appeared at an upper part of a gate in a real process of a tri-gate structure bulk FinFET. A fitting parameter is applied to a modeling method considering single channel effect and narrow effect of a tri-gate structure bulk FinFet. A corner factor is additionally applied to the modeling method to consider corner effect appeared at an upper part of a gate in a real process of the tri-gate structure bulk FinFET.
摘要翻译：提供了一种用于建模纳米尺度FET（场效应晶体管）阈值电压的方法，通过考虑在三栅结构的实际过程中出现在栅极上部的角效应，精确地估计体FinFET的阈值电压散装FinFET。考虑单通道效应和三栅结构散装FinFet的窄效应，拟合参数应用于建模方法。一个角点因素另外应用于建模方法，以考虑在三栅结构体FinFET的实际过程中出现在栅极上部的角效应。

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