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91. 发明公开

KR1020120003371A 마이크로웨이브 플라즈마 처리 장치 有权
标题翻译：微波等离子体加工设备
公开(公告)号：KR1020120003371A
公开(公告)日：2012-01-10
申请号：KR1020110057331
申请日：2011-06-14
申请人： 삼성전자주식회사
发明人： 최진혁 , 한상철 , 기종일 , 이영동 , 이근석 , 오승훈
IPC分类号： H05H1/46 , H01L21/205
CPC分类号： H01J37/3222 , H01J37/32513 , H01J37/32559 , H05H1/46 , H05H2001/463
摘要： PURPOSE: A microwave plasma processing apparatus is provided to maintain the insulating film material of a wafer which is processed at the plasma environment with a high level by obtaining stable plasma. CONSTITUTION: An antenna(30) comprises a plurality of slots(31) having various shapes. A microwave is emitted to inside of a chamber through a plurality of slots which is formed in the antenna. The antenna is touched to a top plate by a bolt. An elongated groove(33) is formed according to the outer circumference of the antenna. A protrusion(61) which is formed according to the outer circumference of an antenna support ring(60) is combined in the elongated groove. A coupling hole(63) is formed in the protrusion. The bolt is inserted through the coupling hole.
摘要翻译：目的：提供微波等离子体处理装置，通过获得稳定的等离子体，在等离子体环境下通过高水平维持晶片的绝缘膜材料。构成：天线（30）包括具有各种形状的多个槽（31）。微波通过形成在天线中的多个狭缝发射到腔室的内部。天线通过螺栓与顶板接触。根据天线的外周形成细长槽（33）。根据天线支撑环（60）的外周形成的突起（61）组合在细长槽中。在突起中形成有连接孔（63）。螺栓插入连接孔。

92. 发明公开

KR1020100060087A 세라믹 돔 구조체 및 이를 이용하는 플라즈마 처리 장치 失效
标题翻译：陶瓷结构和等离子体加工设备
公开(公告)号：KR1020100060087A
公开(公告)日：2010-06-07
申请号：KR1020080118527
申请日：2008-11-27
申请人： 세메스 주식회사
发明人： 정순빈
IPC分类号： H01L21/3065 , H01L21/205 , H01L21/02
CPC分类号： H01J37/32513 , H01J37/3244 , H01J37/32477
摘要： PURPOSE: A ceramic dome structure and a plasma processing apparatus using the same are provided to reduce manufacturing costs by supplying an integrated fixing unit to the upper side of the body to mount an antenna coil. CONSTITUTION: The upper side of a body with a dome shape is flat and the lower side thereof is opened. The upper side of a fixing unit(110b) is protruded with a plate shape. A plurality of grooves to insert and mount an antenna coil is formed on the protruded upper side of the fixing unit. A cover plate(116) covers the upper side of the fixing unit in which the antenna coil is inserted into the grooves. A plurality of nozzle insertion holes(124a) is uniformly arranged along the edge of the upper side of the body. A gas nozzle is inserted into the nozzle insertion hole.
摘要翻译：目的：提供一种陶瓷圆顶结构和使用其的等离子体处理装置，以通过将整体固定单元提供到主体的上侧来安装天线线圈来降低制造成本。构成：具有圆顶形状的身体的上侧是平的，并且其下侧被打开。定影单元（110b）的上侧以板状突出。在固定单元的突出的上侧形成有用于插入和安装天线线圈的多个槽。盖板（116）覆盖固定单元的上侧，天线线圈插入槽中。多个喷嘴插入孔（124a）沿着身体的上侧的边缘均匀地布置。气体喷嘴插入喷嘴插入孔。

93. 发明公开

KR20090070597A Apparatus for treating a substrate 无效
标题翻译：用于处理基板的装置
公开(公告)号：KR20090070597A
公开(公告)日：2009-07-01
申请号：KR20070138658
申请日：2007-12-27
申请人： SEMES CO LTD
发明人： JEON CHI HYUNG
IPC分类号： H05H1/24 , H05H1/30 , H05H1/34
CPC分类号： H01J37/32082 , H01J37/32449 , H01J37/32513 , H05H1/46 , H05H2001/4645
摘要： A substrate processing apparatus is provided to improve alignment reliability by inserting a centering member between a first connection port and a second connection port. A chamber accommodates a wafer and provides a space for performing a process. A remote plasma generating member(700) is located outside the chamber and generates the plasma. A connecting unit connects the chamber and the remote plasma generating member and supplies the plasma generated from the remote plasma generating member. The connecting unit includes a first connection port(820), a second connection port(840) and a centering member(860). The first connection port is provided to the chamber. The second connection port is inserted to the first connection port and is provided to the remote plasma generating member while being inserted into the first concatenated port. The centering member is located between the inner port of the first connection port and the outer wall of the second connection port and aligns the first connection port and the second connection port.
摘要翻译：提供了一种基板处理装置，通过在第一连接端口和第二连接端口之间插入定心构件来提高对准可靠性。一个室容纳一个晶片，并提供一个执行一个过程的空间。远程等离子体产生元件（700）位于腔室外部并产生等离子体。连接单元连接室和远程等离子体产生构件，并且供应由远程等离子体产生构件产生的等离子体。连接单元包括第一连接端口（820），第二连接端口（840）和定心构件（860）。第一连接端口被提供到腔室。第二连接端口被插入到第一连接端口，并被提供给远程等离子体产生部件，同时插入第一连接端口。定心构件位于第一连接端口的内端口和第二连接端口的外壁之间，并且使第一连接端口和第二连接端口对齐。

94. 发明公开

KR1020070075603A 오링씰 구조를 갖는 플라즈마 식각장치 无效
标题翻译：具有O型圈密封结构的等离子体蚀刻装置
公开(公告)号：KR1020070075603A
公开(公告)日：2007-07-24
申请号：KR1020060004066
申请日：2006-01-13
申请人： 삼성전자주식회사
发明人： 정현민
IPC分类号： H01L21/3065 , H01L21/00
CPC分类号： H01J37/32513 , H01L21/67069 , H01L21/67126
摘要： A plasma etching apparatus with an O-ring seal structure is provided to prevent a bottom Vpp drop and a bottom reflect power loss in applying RF by controlling an arcing phenomenon frequently occurring in a conventional bellows seal structure. An upper electrode(16) is formed in the upper region of a process chamber(12). A lower electrode(24) on which a wafer is placed is formed in the lower region of the process chamber. The wafer is elevated by a wafer elevating pin(30), penetrating the lower electrode. A shaft(34) is installed to penetrate the process chamber, elevating the wafer elevating pin. An O-ring seal structure is installed in the process chamber to surround the shaft, maintaining the airtightness in the process chamber and composed of a stator(110), a first O-ring(120) and a second O-ring(122). The stator has a corner part of a round shape. The first O-ring is inserted into the stator to come in contact with the shaft. The second O-ring is interposed between the stator and the process chamber. The stator can be of a cylindrical type whose upper region is a dome shape, made of a ceramic material.
摘要翻译：提供具有O形环密封结构的等离子体蚀刻装置，以通过控制常规波纹管密封结构中经常发生的电弧现象来防止施加RF的底部Vpp下降和底部反射功率损失。上部电极（16）形成在处理室（12）的上部区域中。在处理室的下部区域中形成有放置晶片的下部电极（24）。晶片由穿过下电极的晶片升降销（30）升高。安装轴（34）以穿透处理室，升高晶片升降销。 O型环密封结构安装在处理室中以围绕轴，保持处理室中的气密性并由定子（110），第一O形环（120）和第二O形环（122）构成，。定子具有圆形的角部分。第一O形环插入定子中以与轴接触。第二O形环介于定子和处理室之间。定子可以是圆柱形的，其上部区域是由陶瓷材料制成的圆顶形状。

95. 发明公开

KR1020070062622A 플라즈마 발생기를 위한 페라이트 코어 조립체 및 이를구비한 플라즈마 처리 시스템 失效
标题翻译：用于等离子体发生器和等离子体处理系统的铁素体组件
公开(公告)号：KR1020070062622A
公开(公告)日：2007-06-18
申请号：KR1020050122219
申请日：2005-12-13
申请人： 주식회사 뉴파워 프라즈마
发明人： 위순임
IPC分类号： H05H1/34
CPC分类号： H01J37/32669 , H01J37/321 , H01J37/32513 , H01J37/32559 , H05H1/46 , H05H2001/4645
摘要： A ferrite core assembly for a plasma generator and a plasma processing system having the same are provided to be efficiently arranged on a wide area by making the ferrite core assemblies of various shapes and to uniformly obtain the density of plasma. A ferrite core assembly for a plasma generator includes a plurality of ferrite cores(42), an assembly forming maintenance unit(41), and an induction coil(44). The plurality of ferrite cores(42) have a consecutive column to be matched with an aperture, and are assembled to form a closed loop. The assembly forming maintaining unit(41) maintains a shape into which the plurality of ferrite cores are assembled. The induction coil(44) is wound to induce a magnetic field according to the closed loop which is formed by the plurality of ferrite cores(42). The magnetic field is reinforced and induced along the closed loop which is assembled to the plurality of ferrite cores according as AC power is provided from a power supply source(52) to an induction coil(50). A reactive gas is reacted for a plasma by inducing an electric field on a circumference of the closed loop.
摘要翻译：提供了一种用于等离子体发生器的铁氧体磁芯组件和具有该等离子体发生器的等离子体处理系统，以通过制造各种形状的铁氧体磁芯组件并且均匀地获得等离子体的密度而有效地布置在广泛的区域上。一种用于等离子体发生器的铁氧体磁芯组件，包括多个铁氧体磁芯（42），组件形成维护单元（41）和感应线圈（44）。多个铁氧体磁芯（42）具有与孔相配合的连续列，并被组装形成闭环。组装成型保持单元（41）保持多个铁氧体磁芯组装在其中的形状。感应线圈（44）被卷绕以根据由多个铁氧体磁心（42）形成的闭环产生磁场。根据从电源（52）到感应线圈（50）提供的交流电力，磁场被加强并沿着闭合回路被组装，所述闭环被组装到多个铁氧体磁心。通过在闭环的圆周上引起电场，反应气体对于等离子体反应。

96. 发明公开

KR1020060055136A 반도체 소자 제조용 식각 장비 无效
标题翻译：用于半导体器件制造的蚀刻设备
公开(公告)号：KR1020060055136A
公开(公告)日：2006-05-23
申请号：KR1020040094600
申请日：2004-11-18
申请人： 삼성전자주식회사
发明人： 심무경
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32513 , H01J37/32522
摘要： 공정 챔버의 리드 구조를 변형시켜 리드의 클리닝을 효율적으로 할 수 있는 반도체 소자 제조용 식각 장비가 제공된다.
반도체 소자 제조용 식각 장비는 공정 챔버 바디, 공정 챔버 바디의 상부를 덮어 밀폐하는 하부 리드, 하부 리드 상부에 위치하고 하부 리드의 가열을 위한 히팅 블럭을 상면에 탑재하는 상부 리드 및 상부 리드와 상기 하부 리드를 결합고정시키는 결합 수단을 포함한다.
식각 장비, 리드, 클리닝

97. 发明公开

KR1020060019901A 반도체 제조 설비 无效
标题翻译：半导体制造装置
公开(公告)号：KR1020060019901A
公开(公告)日：2006-03-06
申请号：KR1020040068599
申请日：2004-08-30
申请人： 삼성전자주식회사
发明人： 김찬일
IPC分类号： H01L21/3065 , H01L21/205 , H01L21/02
CPC分类号： H01L21/67017 , H01J37/32513
摘要： 플라즈마 클리닝 공정을 위한 반도체 제조 설비가 제공된다. 반도체 제조 설비는 챔버, 챔버를 밀봉하며 내면은 금속재질이고 외면은 석영재질인 쉴드, 쉴드로 밀봉된 챔버 상부에 장착되며 초기 플라즈마를 발생시키키 위한 코일이 내장된 리드, 챔버 하부에 형성되며 반도체 기판이 로딩되고 RF 플라즈마를 발생시키는 플레이트부, 챔버에 반응 가스를 공급하기 위한 가스 주입부 및 챔버내에서 반응된 가스를 배출하기 위한 가스 배출부를 포함한다.
플라즈마, 클리닝, 반도체 제조 설비, 쉴드

98. 发明公开

KR1020050112735A 반도체 제조 설비용 가스 분사 장치 无效
标题翻译：装置用于半导体制造设备的喷射气体
公开(公告)号：KR1020050112735A
公开(公告)日：2005-12-01
申请号：KR1020040038130
申请日：2004-05-28
申请人： 삼성전자주식회사
发明人： 최웅천
IPC分类号： H01L21/3065
CPC分类号： H01J37/32513 , G03F7/427 , H01L21/67069
摘要： 본 발명은 반도체 제조 설비용 가스 분사 장치에 관한 것으로서, 이를 위하여 본 발명은 반응 챔버의 반도체 기판이 안치되는 정전 척의 직상부에서 소스 가스를 분사하기 위해 구비되는 반도체 제조 설비용 가스 분사 장치에 있어서, 상부면 중앙에 복수의 가스 분사홀(11)을 형성한 가스 분사 플레이트 본체(10)의 하단부측 외주연부의 상부면으로 링홈(12)을 형성하고, 링홈(12)에는 O링(20)이 끼워지면서 상기 가스 분사 플레이트 본체(10)의 상부에 구비되는 고정 플레이트(30)의 외주연 하단부의 저면과는 상기 O링(20)에 의해 밀착되면서 스크류 체결되도록 하는 구성인 바 가스 분사 플레이트 본체(10)와 고정 플레이트(30)간 긴밀한 실링성 유지와 함께 견고하고 균일한 체결력을 갖도록 함으로써 안정된 공정 수행 및 그에 따른 제품 품질과 생산성이 향상되 도록 하는데 특징이 있다.

99. 发明公开

KR1020030078458A 오염이 방지되도록 게이트 밸브가 설치되는 열교환기표면처리장치 失效
标题翻译：安装了门式阀的热交换器表面处理装置，以防止污染
公开(公告)号：KR1020030078458A
公开(公告)日：2003-10-08
申请号：KR1020020017514
申请日：2002-03-29
申请人： 주식회사 엘지이아이
发明人： 조천수 , 윤동식
IPC分类号： C23C16/44
CPC分类号： H01J37/32513 , B05D1/62 , C23C16/4409 , F28F13/182 , H01J37/3277 , H01J2237/3382
摘要： PURPOSE: A heat exchanger surface treatment apparatus in which gate valve is installed to prevent contamination is provided to prevent deposited material of deposition chamber from flowing into surrounding chambers so that the surrounding chambers are not contaminated accordingly. CONSTITUTION: The apparatus comprises carriers on which assembled heat exchangers are mounted, a transfer part for sequentially transferring the carriers, a surface treatment part for continuously forming surface treatment film on the whole surface of the heat exchangers transferred by the carriers, a transfer device arranged at both sides of the surface treatment part to load and unload the heat exchanger mounted carriers to the surface treatment part, and a power supply impressing part for impressing power supply to the heat exchangers mounted on the carriers when the carriers are passing through the surface treatment part, wherein the surface treatment part comprises loading chamber, cleaning chamber, polymerization chamber, post chamber and unloading chamber sequentially arranged, the respective chambers are opened and closed by gate valves, and the gate valves are installed on the outer side of the respective chambers centering around the polymerization chamber, and wherein the gate valves comprise valve case(132) installed on the outer side of chamber main body(131); air cylinder(133) installed on the outer part of the valve case; outer valve plate(134) a rear part of which is connected to cylinder rod(133a) of the air cylinder; inner valve plate(138) one surface of which is connected to the outer valve plate through several links(135) and springs(136), and on the other surface of which O-ring(137) is installed to seal an opening part of the chamber; linear motion guide(141) installed at the outer valve plate; and rail guide(142) formed on the valve case.
摘要翻译：目的：设置安装闸阀以防止污染的热交换器表面处理装置，以防止沉积室的沉积物流入周围的室，使得周围的室不被相应地污染。构成：该装置包括安装有组装的热交换器的载体，用于顺序地传送载体的转印部，用于在由载体转印的热交换器的整个表面上连续形成表面处理膜的表面处理部，布置在表面处理部分的两侧，将安装有热交换器的载体装载和卸载到表面处理部分;以及电源施加部分，用于在载体通过表面处理时向安装在载体上的热交换器施加电力供应其中表面处理部分包括装载室，清洗室，聚合室，后室和卸载室，依次布置，各个室由闸阀打开和关闭，闸阀安装在各个室的外侧以聚合室为中心，其中， te阀包括安装在腔室主体（131）的外侧上的阀壳（132）; 安装在阀壳外部的气缸（133）外阀板（134），其后部连接到气缸的气缸杆（133a）; 内部阀板（138），其一个表面通过多个连杆（135）和弹簧（136）连接到外部阀板，并且在其另一个表面上安装有O形环（137）以密封房间安装在外阀板上的直线运动引导件（141）和形成在阀壳体上的导轨（142）。

100. 发明授权

KR101922287B1 플라즈마 처리 장치 및 플라즈마 처리 방법 有权
公开(公告)号：KR101922287B1
公开(公告)日：2018-11-26
申请号：KR1020150125487
申请日：2015-09-04
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 미우라시게히로 , 사토준
IPC分类号： H01L21/02 , H01L21/205 , H01L21/683
CPC分类号： H01L21/0234 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32366 , H01J37/32458 , H01J37/32513 , H01J37/32715 , H01J37/32752 , H01J37/32899 , H01L21/02164 , H01L21/0228 , H01L21/31116 , H01L21/68764 , H01L21/68771
摘要： 플라즈마처리장치는, 처리용기와, 해당처리용기내에설치되고, 기판을상면에적재가능한회전테이블과, 해당회전테이블의주위방향에있어서의소정개소에형성되고, 제1 플라즈마가스로부터제1 플라즈마를발생시켜제1 플라즈마처리를행하는제1 플라즈마처리영역과, 해당제1 플라즈마처리영역과상기주위방향에있어서이격하여형성되고, 제2 플라즈마가스로부터제2 플라즈마를발생시켜제2 플라즈마처리를행하는제2 플라즈마처리영역과, 상기주위방향에있어서상기제1 플라즈마처리영역과상기제2 플라즈마처리영역사이의 2개의간격영역각각에형성되고, 상기제1 플라즈마처리영역과상기제2 플라즈마처리영역을분리하여상기제1 플라즈마가스와상기제2 플라즈마가스의혼합을방지하는 2개의분리영역을갖는다.

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