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1. 发明专利

JPH06333789A LOW IMPEDANCE 4-TERMINAL SOLID ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06333789A
公开(公告)日：1994-12-02
申请号：JP14012893
申请日：1993-05-18
申请人： NITSUKO LTD
发明人： TOIDA TAKESHI , SHIMURA MITSUGI
IPC分类号： H01G4/40 , H01G9/00 , H01G9/012 , H01G9/14 , H01G9/28 , H01G9/05
摘要： PURPOSE:To provide a low impedance 4-terminal solid electrolytic capacitor capable of effectively absorbing noises in a high frequency area of 1MHz or more and also enlarging capacitance with low impedance and low equivalent series resistance in a high frequency area. CONSTITUTION:An end part of a metallic substrate 1 of a single plate-type capacitor element 10 is connected with a belted anode external electrode terminal 4 so as to project it from both sides, and also the surface of a capacitor part 2 is connected with a belted cathode external electrode terminal 3 so as to project it from both sides. A plurality of capacitor elements 10 are superimposed, and the anode external electrode terminals 4 of the adjoining capacitor elements are connected with each other, and also the cathode external electrode terminals are connected with each other. The connected anode external electrode terminal parts and cathode external electrode terminal parts are respectively coated with insulator 6 and insulator 5 to form a laminated capacitor element 11, thereby obtaining a 4-terminal solid electrolytic capacitor. Further, a ferrite core 7 is inserted into the connection part coated with the insulator 6.

2. 发明专利

JPH06325987A STRUCTURE OF SOLID ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06325987A
公开(公告)日：1994-11-25
申请号：JP11057993
申请日：1993-05-12
申请人： ROHM CO LTD
发明人： KANETAKE YASUO
IPC分类号： H01G4/252 , H01G9/00 , H01G9/004 , H01G9/012 , H01G9/08 , H01G9/05 , H01G1/14
摘要： PURPOSE:To provide a solid electrolytic capacitor capable of easy identification of polarities, molded in a package in which a positive lead is connected to a positive-electrode bar projected from a capacitor chip that is connected to a negative-electrode lead terminal. CONSTITUTION:A negative-electrode lead terminal 13 is projected from one end face 14a out of end faces 14a and 14b of a molding part 14, while a positive- electrode lead terminal 12 is projected from one side face 14c out of side faces 14c and 14d of the molding part 14.

3. 发明专利

JPH06314640A MANUFACTURE OF SOLID STATE ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06314640A
公开(公告)日：1994-11-08
申请号：JP12326593
申请日：1993-04-28
申请人： JAPAN CARLIT CO LTD
发明人： FUKUDA MINORU , YAMAMOTO HIDEO
IPC分类号： C08G61/12 , C08G61/10 , H01G9/00 , H01G9/004 , H01G9/02 , H01G9/028 , H01G9/04 , H01G9/24 , H01G9/05
摘要： PURPOSE:To dispense with contact or removal of an electrode conductor from outside by forming a first insulating coat film over a dielectric oxide film of valve action metal with a first pattern of a predetermined dimension of square remaining and by subjecting this film to separate it off by every pattern. CONSTITUTION:A first insulating coat film is formed over a dielectric oxide film 2 of valve action metal with a first pattern of a predetermined dimension of square remaining, and a second insulating coat film 6 with a second pattern partially larger than a square pattern remaining. A conductive coat film 8 serving as the power supply electrode during electrolytic polymerization is formed over a part of the first insulating coat film 5 exposed in the second pattern and a part of the second insulating coat film 6, and a third insulating coat film 10 over a part of the conductive coat film 8 formed over the second insulating coat film 6. A cathode layer 13 is formed of a carbon or silver paste over a conductive polypyrrole film 11 by electrolytic polymerization and separated off by every pattern for production.

4. 发明专利

JPH06310382A MANUFACTURE OF SOLID ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06310382A
公开(公告)日：1994-11-04
申请号：JP10136393
申请日：1993-04-27
申请人： SHOWA DENKO KK
发明人： NAITO KAZUMI , MURAKOSHI YOSHIHIKO
IPC分类号： H01G9/028 , H01G9/02 , H01G9/04 , H01G9/08 , H01G9/05
摘要： PURPOSE:To relax the effect of thermal stress on a solid electrolytic capacitor when it is sealed up with resin so as to prevent cracks from being produced inside a semiconductor layer by a method wherein the semiconductor layer is kept at temperatures higher than a resin molding temperature after it is formed. CONSTITUTION:A dielectric oxide film layer, a semiconductor layer, and a conductive layer are successively formed on the surface of an anode base made of a metal having valve action, and the above anode base mounted with the layers is sheathed with resin and set into a solid electrolytic capacitor. At this point, the semiconductor layer is kept at a temperature higher than a resin curing temperature before resin is cured but after the semiconductor is formed. The semiconductor layer is made to rise by stages to a temperature higher than a resin molding temperature. It is preferable that the semiconductor is kept at high temperatures for a few hours to tens of hours. By this setup, a solid electrolytic capacitor excellent in heat resistance can be manufactured.

5. 实用新型

JPH0677229U 失效
公开(公告)号：JPH0677229U
公开(公告)日：1994-10-28
申请号：JP7519692
申请日：1992-10-05
IPC分类号： H01G9/048 , H01G9/004 , H01G9/04 , H01G9/05

6. 发明专利

JPH06283392A STRUCTURE OF PACKAGE-TYPE SOLID ELECTROLYTIC CAPACITOR AND MANUFACTURE OF PACKAGE-TYPE SOLID ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06283392A
公开(公告)日：1994-10-07
申请号：JP6661093
申请日：1993-03-25
申请人： ROHM CO LTD
发明人： KURIYAMA CHOJIRO
IPC分类号： H01G9/012 , H01G9/00 , H01G9/05
摘要： PURPOSE:To eliminate a bent part and to reduce the entire length of a capacitor element only at this part by jointing a cathode lead terminal to one end face where an anode rod protrudes out of both end faces of a chip piece at the capacitor element and the other end face at the opposite side. CONSTITUTION:An anode rod 1b protruding from one end face 1a' in a chip piece 1a of a capacitor element 1 is jointed to the lower surface of one anode lead terminal 2 out of a pair of left and right lead terminals 2 and 3. On the other hand, one edge part 3a of the other cathode lead terminal 3 is allowed to contact an other end face 1a'' in the chip piece 1a for jointing with a metal paste 4 or a conductive resin paste and then the entire part is packaged by a synthetic resin mold 5, thus reducing a total length L of the capacitor without providing the flexed part halfway at the cathode lead terminal 3 and also reducing a total height H without allowing one-edge parts 3a' and 3a'' of the cathode lead terminal to slide on the upper surface or the lower surface of the chip piece 1a.

7. 发明专利

JPH06267803A ELECTRODE MATERIAL FOR CAPACITOR 失效
公开(公告)号：JPH06267803A
公开(公告)日：1994-09-22
申请号：JP5597493
申请日：1993-03-16
申请人： NIPPON STEEL CORP
发明人： SAGA MAKOTO , TANIGUCHI YUICHI
IPC分类号： H01G9/042 , H01G9/04 , H01G9/052 , H01G9/05
摘要： PURPOSE:To obtain a capacitor, whose leaking current is less and capacitance is large, by using a porous electrode, which is constituted of a dendroid intermetallic compound. CONSTITUTION:Any one kind of intermetallic compounds having a dendroid patterns Al3Zr and Al3Hf or the mixed powder of these compounds are molded and sintered in the porous state in the mutual contact state. The surface of the gap part of the porous body is oxidized. Thus, the porous dendroid intermetallic compound body (b) is formed. The body is used for the electrode material of a capacitor. Thus, the value of the capacitance of the capacitor can be made to be about twice to 40 times in comparison with the value of a conventional Al capacitor.

8. 发明专利

JPH06252013A CHIP-TYPE CAPACITOR 失效
公开(公告)号：JPH06252013A
公开(公告)日：1994-09-09
申请号：JP4080793
申请日：1993-03-02
申请人： NEC CORP
发明人： OI MASASHI
IPC分类号： H01G9/00 , H01G9/004 , H01G9/08 , H01G9/05
摘要： PURPOSE:To improve the visibility of mounting and stamping of an easy coating type of chip-type capacitor characterized by small size and large capacity. CONSTITUTION:An insulating resin cap 4 set beforehand with a stamping is set on a capacitor 1 having a cathode layer and an anode lead. The mounting property is improved by flattening the topside of the capacitor 1, that is, the suction face at mounting is flattened hereby, and also the visibility of stamping can be improved.

9. 发明专利

JPH06252011A MANUFACTURE OF SOLID ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH06252011A
公开(公告)日：1994-09-09
申请号：JP3917793
申请日：1993-03-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IDA TAKASHI , NISHIYAMA SUMIO
IPC分类号： H01G9/04 , H01G9/00 , H01G9/052 , H01G9/05 , H01G9/24
摘要： PURPOSE:To get a solid electrolytic capacitor, which has favorable capacitor property with high capacity achievement percentage, using a specified porous sintered substance where a manganese dioxide layer is formed. CONSTITUTION:Since a porous sintered substance consisting of valve acting metal 1.0mm or under in thickness is used, the pore path inside the porous sintered substance becomes short, as a result, a uniform manganese dioxide layer can be formed inside the porous sintered substance. And, another manganese dioxide layer is formed outside of the porous sintered substance by thermally decomposing manganese acetate after piling up a plurality of porous sintered substances where uniform manganese dioxide layers are formed on the inside oxide films. Hereby, a solid electrolytic capacitor 1 having a favorable capacitor property (tandelta property, leak current property) with high capacity achievement can be obtained.

10. 发明专利

JPH06252009A STRUCTURE OF SOLID ELECTROLYTIC CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06252009A
公开(公告)日：1994-09-09
申请号：JP3816793
申请日：1993-02-26
申请人： ROHM CO LTD
发明人： NAKAMURA SHINJI , HASEGAWA MIKI
IPC分类号： H01G9/012 , H01G9/00 , H01G9/052 , H01G9/05 , H01G9/24
摘要： PURPOSE:To materialize downsizing in spite of large capacity and also, cut down the cost, in a solid electrolytic capacitor such as a tantalum solid electrolytic capacitor, etc. CONSTITUTION:A metallic piece 13 such as of tantalum, etc., is fixed to one end face of the chip piece 12 being made by sintering metallic particles such as of tantalum, etc., is sintered to be porous, while a dielectric film 16 such as of tantalum pentaoxide, etc., is formed around the chip piece 12 and the metallic piece 13, and a solid electrolytic layer 17 such as of a manganese dioxide, etc., and a cathode film 19 are formed each on the chip piece 12, and an anode terminal film 20 is formed at the end face of the metallic piece 13.

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