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1. 发明专利

JPH08292269A DETERMINING METHOD OF CROSS SECTION OF PHOTONUCLEAR REACTION, METHOD FOR NUCLEAR TRANSMUTATION AND GERMANIUM DETECTOR 失效
公开(公告)号：JPH08292269A
公开(公告)日：1996-11-05
申请号：JP9653295
申请日：1995-04-21
申请人： DORYOKURO KAKUNENRYO
发明人： HARADA HIDEO , SATO ISAMU
IPC分类号： G21F9/00 , G01T1/20 , G01T1/24 , G01T1/34 , G21G1/12
摘要： PURPOSE: To measure high-energy γ rays with high resolution and to improve the efficiency of nuclear transmutation. CONSTITUTION: A Ge detector comprises a main detecting part constituted of germanium crystals l connected in a plurality so that the full length of the part be 20 centimeters or larger in the direction of incidence of γ rays, cooling layers 5 for cooling that part and a BGO scintillator 7 detecting photons dispersing from the main detecting part. Since the depth in the direction of incidence is long, accordingly, the γ rays are detected accurately even when they are of high energy. At the time when the γ rays are cast on a specific atomic nucleus, a change in the intensity of the γ rays before and after the irradiation is measured accurately by the detector and the cross section of the photonuclear reaction of this atomic nucleus is determined. In succession, the γ rays having the energy maximizing the cross section of the photonuclear reaction are cast on the atomic nucleus so as to accelerate nuclear transmutation.

2. 发明专利

JP2009539245A Microchannel avalanche photodiode (variant) 有权
公开(公告)号：JP2009539245A
公开(公告)日：2009-11-12
申请号：JP2009513088
申请日：2007-05-31
申请人：ジラディンヤグブ−オグリサディゴフ , ゼコテックメディカルシステムズシンガポールピーティーイーリミテッド
发明人：ジラディンヤグブ−オグリサディゴフ
IPC分类号： H01L31/06 , H01L31/107 , G01T1/34
CPC分类号： H01L31/107 , H01L31/0352
摘要： The invention - microchannel avalanche diode, belongs to semiconductor photosensitive devices, and specifically to semiconductor avalanche diodes with internal amplification of the signal. The proposed microchannel avalanche diode can be used for registration of super feeble light pulses, including up to individual photons, and also gamma quants and charged particles in devices for medical gamma tomography, radiation monitoring, and nuclear physics experiments. The characteristic feature of the proposed device is that in the avalanche photodiode, containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate, at least one two-dimensional matrix of separate solid-state areas - islets with enhanced conductivity for the creation of potential micro-holes is formed. In order to reduce the generation current in the volume and to improve the homogeneity of the distribution of the potential along the surface of the device, the solid-state areas are situated between two additional semiconductor layers having enhanced conductivity with respect to the semiconductor layers with which they have common interfaces. As a result, such form of distribution of the potential in the volume of the device is achieved, which ensures the gathering of the photoelectrons towards the separate solid-state areas where avalanche amplification of the charge carriers with their subsequent accumulation in the corresponding micro-holes is taking place. The charge accumulated in the micro-holes decreases the electric field in the avalanche area, which leads to self-extinguishing of the avalanche process. Then the charge carriers flow to the contacts, thanks to sufficient leakage in the micro-holes. In this way, amplification of the photoelectrons takes place in independent multiplication channels with subsequent self-extinguishing of the avalanche process. Thanks to that, the stability of the amplitude of the photo-response is improved and the sensitivity of the avalanche photodiode is increased.

3. 发明专利

JP2006010356A Non-destructive analyzing method using pulse neutron transmitting method and its non-destructive analyzer 审中-公开
标题翻译：使用脉冲中子发射方法的非破坏性分析方法及其非破坏性分析仪
公开(公告)号：JP2006010356A
公开(公告)日：2006-01-12
申请号：JP2004184237
申请日：2004-06-22
申请人： Japan Nuclear Cycle Development Inst States Of Projects , 核燃料サイクル開発機構
发明人： HARADA HIDEO , SHCHERBAKOV OLEG ALEXEEVICH
IPC分类号： G01N23/09 , G01T1/34 , G01T1/36 , G01T3/00 , G21C17/06 , G21K5/02 , G21K5/08
摘要： PROBLEM TO BE SOLVED: To identify a nuclide to determinate its content. SOLUTION: A sample 18 to be analyzed is irradiated with pulse neutrons from an external neutron source and the energy distribution of transmitted neutrons is detected by a neutron detector 22 while the cavity of a neutron resonance peak at every nuclide is observed by a flying time measuring method not only to identify the nuclide contained in the sample but also to determinate its content. The sample to be analyzed is placed on an unidimensional or two-dimensional sample drive stand 16 and moved to be irradiated with collimated pulse neutrons and the transmitted neutrons are measured by the neutron detector while a background is removed by a shield body. By this method, the kind of the nuclide contained in the sample and the position dependency of the content of the nuclide can be calculated. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：确定核素以确定其内容。解决方案：待分析的样品18用来自外部中子源的脉冲中子照射，并且透射中子的能量分布由中子检测器22检测，而每个核素的中子共振峰的空腔被观察到飞行时间测量方法不仅可以识别样品中包含的核素，而且可以确定其含量。要分析的样品放置在一维或二维采样驱动支架16上，并移动以用准直脉冲中子照射，并且通过中子探测器测量透射的中子，同时通过屏蔽体去除背景。通过该方法，可以计算样品中所含的核素种类和核素含量的位置依赖性。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2013138240A Microchannel avalanche photodiode 有权
标题翻译： MICROCHANNEL AVALANCHE PHOTODIODE
公开(公告)号：JP2013138240A
公开(公告)日：2013-07-11
申请号：JP2013034806
申请日：2013-02-25
申请人： Zecotek Medical Systems Singapore Pte. Ltd , ゼコテックイメイジングシステムズシンガポールピーティーイーリミテッド
发明人： SADYGOV ZIRADDIN YAGUB-OGLY
IPC分类号： H01L31/06 , H01L31/107 , G01T1/34
CPC分类号： H01L31/107 , H01L31/0352
摘要： PROBLEM TO BE SOLVED: To provide a microchannel avalanche photodiode which has improved the stability of signal amplitude in visible and ultraviolet spectral regions to improve its sensitivity.SOLUTION: In an avalanche photodiode including a substrate 1 and semiconductor layers 2, 3 and 4 having junction interfaces between themselves and between them and the substrate 1 and which have various electronic physical properties, there is formed at least one two-dimensional matrix of separate solid state regions 4 which are small islands having high conductivity necessary to generate potential microhalls. To cut back currents generated in the cubic volume, and to improve the uniformity of potential distribution along the surface of the device, the solid state regions 4 are disposed between two additional semiconductor layers 2 and 4 having high conductivity relative to a semiconductor layer in which they have their junction interface.
摘要翻译：要解决的问题：提供一种微通道雪崩光电二极管，其提高了可见光和紫外光谱区域中的信号幅度的稳定性，以提高其灵敏度。解决方案：在包括基底1和具有结的半导体层2,3和4的雪崩光电二极管中在它们之间和它们之间以及基板1之间的界面，并且具有各种电子物理性质，形成至少一个独立的固态区域4的二维矩阵，其是产生潜在微通道所需的具有高导电性的小岛。为了切断在立方体积中产生的电流，并且为了提高沿着器件表面的电位分布的均匀性，固态区域4设置在相对于半导体层具有高导电性的两个附加半导体层2和4之间，其中他们有他们的接口接口。

5. 发明专利

JP3652952B2 Non-destructive measurement method and apparatus of the atomic number density 有权
公开(公告)号：JP3652952B2
公开(公告)日：2005-05-25
申请号：JP2000051040
申请日：2000-02-28
申请人：株式会社日立製作所
发明人：博司北口 , 章小泉 , 哲士日野 , 貴夫近藤
IPC分类号： G01N23/09 , G01N23/22 , G01N23/222 , G01T1/167 , G01T1/34 , G21C17/003 , G21C17/10

6. 发明专利

JPS5080880A 失效
公开(公告)号：JPS5080880A
公开(公告)日：1975-07-01
申请号：JP12831873
申请日：1973-11-16
IPC分类号： G01T1/167 , G01N23/221 , G01N33/00 , G01N33/20 , G01T1/34 , G21C17/06

7. 发明专利

JP5320610B2 Microchannel avalanche photodiode (variations) 有权
公开(公告)号：JP5320610B2
公开(公告)日：2013-10-23
申请号：JP2009513088
申请日：2007-05-31
申请人：ゼコテックイメイジングシステムズシンガポールピーティーイーリミテッド
发明人：ジラディンヤグブ−オグリサディゴフ
IPC分类号： H01L31/06 , H01L31/107 , G01T1/34
CPC分类号： H01L31/107 , H01L31/0352
摘要： The invention - microchannel avalanche diode, belongs to semiconductor photosensitive devices, and specifically to semiconductor avalanche diodes with internal amplification of the signal. The proposed microchannel avalanche diode can be used for registration of super feeble light pulses, including up to individual photons, and also gamma quants and charged particles in devices for medical gamma tomography, radiation monitoring, and nuclear physics experiments. The characteristic feature of the proposed device is that in the avalanche photodiode, containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate, at least one two-dimensional matrix of separate solid-state areas - islets with enhanced conductivity for the creation of potential micro-holes is formed. In order to reduce the generation current in the volume and to improve the homogeneity of the distribution of the potential along the surface of the device, the solid-state areas are situated between two additional semiconductor layers having enhanced conductivity with respect to the semiconductor layers with which they have common interfaces. As a result, such form of distribution of the potential in the volume of the device is achieved, which ensures the gathering of the photoelectrons towards the separate solid-state areas where avalanche amplification of the charge carriers with their subsequent accumulation in the corresponding micro-holes is taking place. The charge accumulated in the micro-holes decreases the electric field in the avalanche area, which leads to self-extinguishing of the avalanche process. Then the charge carriers flow to the contacts, thanks to sufficient leakage in the micro-holes. In this way, amplification of the photoelectrons takes place in independent multiplication channels with subsequent self-extinguishing of the avalanche process. Thanks to that, the stability of the amplitude of the photo-response is improved and the sensitivity of the avalanche photodiode is increased.

8. 发明专利

JP2001242101A METHOD AND APPARATUS FOR NONDESTRUCTIVE MEASUREMENT OF DENSITY OF NUMBER OF ATOMS IN 失效
公开(公告)号：JP2001242101A
公开(公告)日：2001-09-07
申请号：JP2000051040
申请日：2000-02-28
申请人： HITACHI LTD
发明人： KONDO TAKAO , KITAGUCHI HIROSHI , KOIZUMI AKIRA , HINO TETSUSHI
IPC分类号： G01N23/09 , G01N23/22 , G01N23/222 , G01T1/167 , G01T1/34 , G21C17/003 , G21C17/10
摘要： PROBLEM TO BE SOLVED: To provide a method, capable of nondestructively measuring the num ber density of thermal neutron absorbing atoms, even when thermal neutron absorbing atoms are distributed in thickness and number density so as to be in capable of transmission of thermal neutrons. SOLUTION: In the method for measuring the number density of atoms large in the cross-sectional area absorbing thermal neutrons, contained in the object to be measured by irradiating an object 25 to be measured with neutrons 8 and measuring neutron-capturing gamma rays 26 by a gammer-ray detector 5, the neutrons 8 applied to the object 25 to be measured are set to epithermal neutrons and energy of such a degree that the neutrons become thermal neutrons, when they pass through the surface 25 on the neutron-emitting side of the object to be measured.

9. 发明专利

JPH102967A MEASURING APPARATUS FOR REACTION CROSS SECTION OF PHOTONUCLEAR REACTION 失效
公开(公告)号：JPH102967A
公开(公告)日：1998-01-06
申请号：JP15808396
申请日：1996-06-19
申请人： MITSUBISHI HEAVY IND LTD
发明人： TANAKA YUTAKA , KURIBAYASHI SHIZUMA , SANO TAMOTSU , ISHIBASHI MASARU
IPC分类号： G01T1/34
摘要： PROBLEM TO BE SOLVED: To obtain a measuring apparatus by which the cross section of a photonuclear reaction can be measured in a narrow energy range and whose energy resolution is enhanced by a method wherein the apparatus is constituted of a storage ring which stores an electron beam and of a laser oscillator which generates a laser beam. SOLUTION: A laser beam 27 from a laser oscillator 25 is guided into a storage ring 21 through a reflecting mirror 29, a lens 31 and an optical window 33 which form an optical system, and it is made to collide with an electron beam 23 which is stored in the ring. By its collision, gamma rays 35 are generated on the incident direction of the electron beam 23 due to the principle of an inverse Compton scatterin. In addition, the gamma rays 35 are collimated by a collimator 37, and monochromatic gamma rays whose energy is uniform are obtained. The monochromatic gamma rays are incident on a sample 39 to be measured, and a photonuclear reaction is generated. Elementary particles which are generated by the photonuclear reaction are detected by a detector 41, and a reaction cross section is found on the basis of its detection data. When the energy level of the electron beam 23 is changed, the energy of the generated monochromatic gamma rays can be set arbitrarily.

10. 发明专利

JPH09504091A 失效
公开(公告)号：JPH09504091A
公开(公告)日：1997-04-22
申请号：JP51462994
申请日：1993-12-15
申请人： UNIV ALBERTA , UNIV FRASER SIMON , UNIV BRITISH COLUMBIA , UNIV VICTORIA , TRIUMF
IPC分类号： G01N23/06 , G01T1/34 , G01V5/00

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