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    • 6. 发明专利
    • Semiconductor device and electro-optical device
    • 半导体器件和电光器件
    • JP2008141091A
    • 2008-06-19
    • JP2006327889
    • 2006-12-05
    • Seiko Epson Corpセイコーエプソン株式会社
    • ISHIGURO HIDETO
    • H01L29/786H01L51/50
    • H01L29/78645H01L27/1214H01L29/78648Y10T428/10Y10T428/1014Y10T428/1068
    • PROBLEM TO BE SOLVED: To provide a semiconductor device and an electro-optical device capable of each obtaining a stable output even if source-drain current fluctuates in the saturated operating region of a thin film transistor caused by kink effect. SOLUTION: The thin film transistor 10 has a polycrystalline silicon film 1a as an active layer and has a multi-gate structure where a first thin film transistor section 10a on the drain side and a second thin film transistor 10b on the source side are connected in series. The first thin film transistor section 10a includes a first front gate electrode 3a and a drain-side back gate electrode 8a electrically connected to the first front gate electrode 3a, and the second thin film transistor section 10b includes a second front gate electrode 3b and a source-side back gate electrode 8b to which a source potential is applied. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供即使在由扭结效应引起的薄膜晶体管的饱和工作区域中源极 - 漏极电流波动的情况下,也能够获得稳定的输出的半导体器件和电光器件。 解决方案:薄膜晶体管10具有作为有源层的多晶硅膜1a,并且具有多栅极结构,其中漏极侧的第一薄膜晶体管部分10a和源极侧的第二薄膜晶体管10b 串联连接。 第一薄膜晶体管部分10a包括电连接到第一前栅极电极3a的第一前栅极电极3a和漏极侧栅极电极8a,第二薄膜晶体管部分10b包括第二前栅极电极3b和 源极侧栅极电极8b。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Liquid crystal element
    • 液晶元件
    • JPS5770520A
    • 1982-05-01
    • JP14580980
    • 1980-10-20
    • Hitachi Ltd
    • UMEDA TAKAOIKAWA TATSUOSHIMAZAKI YUZURUMIYASHITA TAKAONAKANO FUMIO
    • G02F1/13G02F1/1337G02F1/1339G09F9/30
    • G02F1/13392Y10T428/1068Y10T428/1073Y10T428/1086
    • PURPOSE:To hold intersubstrate gap uniformly over the entire part and perform stable orientation treatment on insulation films by dispersing synthetic high polymer solids and insulators having softening point and rigidity higher than those of said sollids in the insulation film of one of the substrate surfaces. CONSTITUTION:Transparent electrodes 10 are formed on transparent substrates 1a, 1b of plastic films or the like, and a soln. of polyamide or the like dispersed with polymer beads 8 of low density polyethylene or the like at about 0.1wt%, and inorg. materials 4 such as glass fibers, or org. high polymer insulators 5 having softening point and rigidity higher than those of the beads 8 at 0.01wt% is coated on the lower substrate 1b and is dried. An insulation film 5 is applied on the substrate 1a as well. The insulation films of the substrates 1b, 1a are subsjected to mutually orthogonal orientation treatment by rubbing, after which both substrates 1a, 1b are heated and pressurized by using jigs 9a, 9b, whereby they are joined and sealed 3. The beads 8 melt to join the substrates 1a, 1b, and the insulators 4 act so as to maintain the gap spacing uniform.
    • 目的:通过将合成的高分子固体和在其中一个基材表面的绝缘薄膜中的软化点和刚性比所述粘合剂的软化点和刚性分散的绝缘体分散在绝缘薄膜上,以均匀地保持基板上的间隙。 构成:透明电极10形成在塑料膜等的透明基板1a,1b上,以及溶胶。 的聚酰胺等分散在低密度聚乙烯等的聚合物珠粒8上,其重量比约为0.1重量%,并且可以使用。 材料4如玻璃纤维或组织。 具有比0.01重量%的珠8的软化点和刚性更高的高聚物绝缘体5涂覆在下基板1b上并被干燥。 绝缘膜5也施加在基板1a上。 基板1b,1a的绝缘膜通过摩擦被相互正交取向处理,之后通过使用夹具9a,9b对两个基板1a,1b进行加热加压,从而将它们接合并密封3.珠8熔化成 连接基板1a,1b,并且绝缘体4起作用以保持间隙间隔均匀。