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1. 发明专利

JP5360837B2 Light sensor and a method of manufacturing the same 有权
公开(公告)号：JP5360837B2
公开(公告)日：2013-12-04
申请号：JP2010531885
申请日：2009-09-30
申请人：国立大学法人岡山大学
发明人：直池田 , 芳博久保園 , 高志神戸
IPC分类号： H01L31/0264
CPC分类号： H01L31/09 , C01G49/0018 , C01P2002/77 , C30B13/00 , C30B29/22 , C30B29/26
摘要： Disclosed is a photosensor having excellent response to long-wavelength light. Also disclosed is a method for manufacturing the photosensor. The photosensor comprises an electrical conductivity variable material which causes a change in electrical conductivity upon receipt of light, first and second electrodes provided on a light receiving surface of the electrical conductivity variable material, and a current detecting means which detects current generated between the first electrode and the second electrode. The electrical conductivity variable material is formed of a compound having a layered triangle lattice structure containing a rare earth element. The compound has a layered triangle lattice structure represented by (RMbO3-d)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb independently represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and d is a real number of 0 to 0.2. In the compound, one or some of R's may be replaced by a positive divalent or lower element.

3. 发明专利

JPS613313B2 JPS613313B2 - 失效
公开(公告)号：JPS613313B2
公开(公告)日：1986-01-31
申请号：JP5916780
申请日：1980-05-02
申请人： Ngk Insulators Ltd
发明人： MATSUZAWA MOTOICHIRO , MASE SHUNZO
IPC分类号： H01F1/34 , C30B1/02 , C30B29/22
CPC分类号： C30B1/02 , C30B29/26
摘要： A single crystal of ferrite is grown toward a polycrystal of ferrite by heating a polycrystal of ferrite and a seed of single crystal of ferrite in contact with each other to effect a solid phase reaction. In this method, as the polycrystal of ferrite use is made of the specific polycrystal of ferrite prepared by using iron oxide containing iron oxide having spinel structure, iron oxide having hysteresis of spinel structure or mixture of these iron oxides in an amount of not less than 60% by weight calculated as Fe2O3 as the starting material of iron oxide of the main component of polycrystal of ferrite and the heating is effected at a temperature lower than the temperature at which the discontinuous grain growth of the polycrystal of ferrite is caused.

4. 发明专利

JPS5926999A Method for epitaxial growth of magnesia spinel in vapor phase and apparatus for epitaxial growth in vapor phase 失效
标题翻译：蒸汽相中磁珠生长的方法和蒸汽相中外延生长的装置
公开(公告)号：JPS5926999A
公开(公告)日：1984-02-13
申请号：JP13605182
申请日：1982-08-04
申请人： Nec Corp
发明人： MIKAMI MASAO , IGARASHI CHIYUUJI
IPC分类号： H01L27/00 , C30B25/00 , C30B25/02 , C30B25/14 , C30B29/26 , H01L21/205 , H01L21/365 , H01L21/86
CPC分类号： C30B25/02 , C30B29/26
摘要： PURPOSE:To grow a magnesia spinel film of good crystallinity and uniformity epitaxially on a substrate, by feeding AlCl3 and MgCl2 gas formed in two raw material chambers to a growth chamber, and reacting the gases with CO2. CONSTITUTION:A raw material chamber 11 having the second raw material chamber 13 on the opened side of the first raw material chamber 12 is connected to a growth chamber 14 through a division plate 15. Aluminum is introduced into a boat 20, and MgCl2 is introduced into a boat 21. The boats 20 and 21 are placed in the respective raw material chambers 12 and 13. HCl gas and N2 gases are introduced from the first pipe 16 into the raw material chamber 12, and N2 gas is introduced from the second pipe 17 into the raw material chamber 13. Substrates 23 are placed on a holder 22 in the growth chamber 14, and the respective gases of CO2, H2 and N2 are introduced from the third pipe 18. AlCl3 formed in the raw material chamber 11 by heating and MgCl2 gas are transferred through a bypass pipe 19 to the growth chamber 14 and reacted with CO2 to form MgO.Al2O3. Thus, the aimed magnesia spinel is epitaxially grown on the substrates 23.
摘要翻译：目的：通过将在两个原料室中形成的AlCl 3和MgCl 2气体进料到生长室，并将气体与二氧化碳反应，在衬底上外延生长具有良好结晶度和均匀性的氧化镁尖晶石膜。构成：在第一原料室12的开放侧具有第二原料室13的原料室11通过分隔板15与生长室14连接。将铝引入舟皿20中，引入MgCl 2 将船20和21放置在各个原料室12和13中。将HCl气体和N 2气体从第一管16引入原料室12中，并且从第二管道衬底23被放置在生长室14中的保持器22上，并且将CO 2，H 2和N 2的各种气体从通过加热形成在原料室11中的第三管道18导入。并且MgCl 2气体通过旁通管19转移到生长室14中并与CO 2反应形成MgO.Al 2 O 3。因此，目标氧化镁尖晶石在衬底23上外延生长。

5. 发明专利

JP2014526983A Transparent composite plate for protection 审中-公开
公开(公告)号：JP2014526983A
公开(公告)日：2014-10-09
申请号：JP2014523280
申请日：2012-07-23
申请人：フラウンホーファー−ゲゼルシャフトツルフェルデルングデルアンゲヴァンテンフォルシュングエーファウFraunhofer−Gesellschaft zur Foerderung der angewandten Forschung e.V.
发明人：クレルアンドレアス , シュトラスブルガーエルマー
IPC分类号： B32B9/00 , F41H5/04
CPC分类号： F41H5/0407 , B32B9/00 , C30B29/26 , F41H5/0428
摘要：本発明は、セラミックスの分野に関し、通常、場合により互いに結合剤により結合されているセラミックス板材、ガラス板材およびプラスチック板材の複数の層から構成されており、高い耐荷重性を有する防護用透明複合板に関する。本発明の課題は、透明多結晶性セラミックスの従来の透過率および品質の欠点、ならびにＡｌ
２Ｏ
３単結晶が微結晶性透明Ａｌ
２Ｏ
３またはスピネル焼結セラミックスと比較して示す保護効果における欠点を回避する防護用透明複合板を提供することである。この課題は、順次配置されている複数の層からなり、その少なくとも１層が１枚の単結晶性マグネシウム・アルミネート・スピネル製板材またはモザイク状もしくは連続的に配置された複数枚の単結晶性マグネシウム・アルミネート・スピネル製板材である防護用透明複合板により解決される。

6. 发明专利

JP2010245510A Ferrite material having composition gradient for measuring magneto-optical effect properties and method for evaluating properties of ferrite 有权
标题翻译：具有用于测量磁光效应特性的组合物梯度的铁素体材料和用于评估铁素体性质的方法
公开(公告)号：JP2010245510A
公开(公告)日：2010-10-28
申请号：JP2010041529
申请日：2010-02-26
申请人： Jfe Mineral Co Ltd , Jfeミネラル株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： IWASAKI YOSUKE , KAWASAKI MASASHI , FUKUMURA TOMOAKI
IPC分类号： H01F10/20 , C23C14/28 , G01R33/032 , H01F1/34 , H01F10/24 , H01F10/26
CPC分类号： H01F10/20 , C04B35/2633 , C04B35/265 , C04B35/2675 , C04B2235/3215 , C04B2235/3217 , C04B2235/3275 , C04B2235/3284 , C04B2235/3286 , C04B2235/3298 , C04B2235/6584 , C04B2235/763 , C04B2235/764 , C04B2235/767 , C23C14/08 , C23C14/28 , C30B23/02 , C30B29/26 , H01F10/205 , H01F10/24 , H01F10/265 , Y10T428/24975
摘要： PROBLEM TO BE SOLVED: To provide a method for evaluating the properties of a ferrite, with which it is possible to continuously measure changes in magnetic properties that accompany changes in ferrite composition by preparing one sample only. SOLUTION: A ferrite thin film having composition gradient is formed by a thin-film formation method on a translucent single crystal substrate, wherein the ferrite thin film comprises a plurality of ferrite layers having composition gradient obtained by film formation while the component composition is graded in a horizontal direction. The changes in magnetic properties accompanying changes in the ferrite composition are continuously measured by continuously measuring a magneto-optical effect along the direction of the composition gradient of the ferrite thin film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于评估铁氧体的性质的方法，通过这种方法可以通过仅制备一个样品来连续测量伴随铁素体组成变化的磁性能的变化。解决方案：通过薄膜形成方法在半透明单晶衬底上形成具有组成梯度的铁氧体薄膜，其中铁氧体薄膜包括多个具有通过成膜获得的组成梯度的铁素体层，而组分组成在水平方向上分级。通过连续地测量沿着铁氧体薄膜的组成梯度方向的磁光效应，连续地测量伴随铁素体组成变化的磁特性的变化。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP4139882B2 Light-induced magnetization control method 有权
公开(公告)号：JP4139882B2
公开(公告)日：2008-08-27
申请号：JP2000035119
申请日：2000-02-14
申请人：国立大学法人大阪大学
发明人：知二川合 , 祐治村岡 , 仁田畑
IPC分类号： C01G49/00 , H01F10/20 , C01G51/00 , C23C14/06 , C23C14/08 , C23C14/28 , C30B23/02 , G11B7/00 , G11B11/105 , H01F41/20
CPC分类号： H01F41/205 , C23C14/08 , C30B23/002 , C30B23/02 , C30B29/26 , G11B7/00
摘要： A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1x10-5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2-2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1-xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

8. 发明专利

JPS5954690A Method for crystal growth 失效
标题翻译：晶体生长方法
公开(公告)号：JPS5954690A
公开(公告)日：1984-03-29
申请号：JP16278382
申请日：1982-09-18
申请人： Sony Corp
发明人： YORIZUMI MINEO , TAMURA HIDEMASA , MAKINO YOSHIMI
IPC分类号： H01F1/34 , C30B13/00 , C30B13/24 , C30B29/22
CPC分类号： C30B13/24 , C30B13/00 , C30B29/16 , C30B29/26
摘要： PURPOSE: To obtain a high-quality crystal without forming foreign materials on the crystal surface and preventing the surface oxidation, by using a mixture of inert gas and oxygen having a specific concentration as the atmospheric gas in the growth of the crystal, and cooling the crystal at a specific crystal temperature while substituting the atmospheric gas with an inert gas.
CONSTITUTION: A desired crystal is grown by heating and melting the raw material 7 for the crystal growth by the direct heating e.g. with infrared radiation 12. In the above process, a mixture of oxygen gas and an inert gas having a partial pressure ratio of oxygen of ≤50% is used as an atmospheric gas. The temperature of the crystal 13 during growth in the growth apparatus 1 is maintained at ≥1,000°C, and the grown crystal is cooled by at least partially substituting the atmosphere with an inert gas before or around the completion of the growth or is cooled in a substituted atmosphere to obtain a ferrite.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过在晶体生长中使用具有特定浓度的惰性气体和氧气作为气氛气体的混合物，在晶体表面上形成异物并防止表面氧化，从而获得高质量的晶体，晶体，同时用惰性气体代替气氛气体。构成：通过直接加热使原料7加热和熔化晶体生长而生长所需的晶体，例如使用红外辐射12.在上述方法中，将氧气和氧气分压比<= 50％的惰性气体的混合物用作气氛气体。生长装置1中生长期间的晶体13的温度保持在> = 1000℃，并且在生长完成之前或周围至少部分地用惰性气体代替气氛来冷却生长的晶体，或者是在取代气氛下冷却，得到铁素体。

9. 发明专利

JP2007506641A Spinel article and a method of manufacturing the same 审中-公开
公开(公告)号：JP2007506641A
公开(公告)日：2007-03-22
申请号：JP2006528094
申请日：2004-09-17
申请人：サン−ゴバンセラミックスアンドプラスティクス,インコーポレイティド
发明人：アッカーマン，ロナルド , オング，フン , クック，ジェフリー , コクタ，ミラン , コリガン，エミリー , ストーン−サンドベーグ，ジェニファー
IPC分类号： C30B29/26 , C30B11/00 , C30B15/00 , C30B33/02
CPC分类号： C30B11/00 , C30B15/00 , C30B29/26
摘要：単結晶スピネルブール、ウェハ、基板およびそれらを含む能動デバイスが開示される。機械的応力および/またはひずみが減少した、このような物品は改良された収率により表される。
【選択図】図１

10. 发明专利

JP2007506639A Spinel boule wafers and their preparation 有权
公开(公告)号：JP2007506639A
公开(公告)日：2007-03-22
申请号：JP2006528092
申请日：2004-09-17
申请人：サン−ゴバンセラミックスアンドプラスティクス,インコーポレイティド
发明人：オング，フン , コクタ，ミラン , ストーン−サンドベーグ，ジェニファー , チンク，ロバート
IPC分类号： C30B29/26 , C30B33/00 , H01L33/00
CPC分类号： C30B33/00 , C30B29/26 , Y10T428/21
摘要：単結晶スピネルウェハが開示され、前面および裏面；ならびに第１および第２平面を持つ外周部を含む。ある態様において、単結晶スピネルウェハは特定の結晶学的配向を有し、そして平面は所望の面配置に沿って延びるように与えられる。平面はへき開面およびへき開面のへき開方向を確認するのに有利でありうる。
【選択図】図１A

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