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1. 发明专利

JP2015528780A 同心流反応装置有权
标题翻译：同心流动反应器
公开(公告)号：JP2015528780A
公开(公告)日：2015-10-01
申请号：JP2015513974
申请日：2013-05-24
申请人：ソルヴォルテイックスエービーSol Voltaics Ab , ソルヴォルテイックスエービーSol Voltaics Ab
发明人：グレッグオルコット， , グレッグオルコット， , マーティンマグヌッセン， , マーティンマグヌッセン， , オリヴィエポステル， , オリヴィエポステル， , クヌートデッパート， , クヌートデッパート， , ラーシュサミュエルソン， , ラーシュサミュエルソン， , ヨナスオールソン， , ヨナスオールソン，
IPC分类号： C30B29/62 , B82Y40/00 , H01L21/205
CPC分类号： C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
摘要：反応チャンバと第1入力部と第2入力部とを含む気相ナノワイヤ成長装置。第1入力部は、第2入力部の中に、同心に位置し、第1入力部及び第2入力部は、第2入力部から配送される第2流体が、第1入力部から配送される第1流体と反応チャンバの壁との間に、シースを与えるように構成される。
摘要翻译：所述反应室和所述第一输入单元蒸气纳米线生长装置和第二输入单元。第一输入单元，在所述第二输入部，同心地定位，第一输入和第二输入单元，从所述第二输入单元被输送的第二流体，被从第一输入单元输送第一流体和被配置为提供一个鞘反应室的壁之间。

3. 发明专利

JP3715911B2 Method of manufacturing the oxide needle-like crystals, oxide needle-like crystals and the photoelectric conversion device 有权
公开(公告)号：JP3715911B2
公开(公告)日：2005-11-16
申请号：JP2001275156
申请日：2001-09-11
申请人：キヤノン株式会社
发明人：央大倉 , 馨小中原 , 透田
IPC分类号： C30B29/62 , C30B23/00 , H01G9/20 , H01L31/18
CPC分类号： H01G9/2027 , C30B23/007 , C30B29/16 , H01L31/1828 , Y02E10/542 , Y02E10/543 , Y02P70/521
摘要： A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source material on a substrate heated at a second temperature lower than the first temperature.

4. 发明专利

JPS6114200A Manufacture of silicon nitride whisker 失效
标题翻译：硅氮化硅的制造
公开(公告)号：JPS6114200A
公开(公告)日：1986-01-22
申请号：JP13609884
申请日：1984-06-29
申请人： Nok Corp
发明人： ANZAI HIROSHI , KIKUCHI KENJI
IPC分类号： C30B29/62 , C04B35/584 , C04B35/593 , C04B35/80 , C30B23/00
CPC分类号： C04B35/80 , C04B35/593 , C30B23/007 , C30B29/38
摘要： PURPOSE:To form easily and efficiently the titled whisker on a sintered body block by calcining a block obtained by molding a mixture of specified whisker material powder and precalcining the molded body in a gaseous N2 atmosphere. CONSTITUTION:A powdery mixture of Si3N4 and 0.5-10wt% oxide ceramic selected from Al2O3, Y2O3, MgO, SiO2, etc. and an organic binder such as PVA are mixed by a wet method, dried, then molded in the form of a plate or a cylinder, and precalcined at 600-1,000 deg.C to obtain a cylindrical block. The block is then calcined in an electric furnace in a gaseous N2 atmosphere at 1,400-1,900 deg.C to form an Si3N4 whisker having about 1mum diameter on the surface and at the inside of the sintered body block. The sintered body block wherein the Si3N4 whisker is uniformly formed on the surface and at the inside or the block impregnated with the same or the different kind of ceramic powder is hot-pressed at 1,700 deg.C to obtain easily a ceramic whisker-reinforced composite ceramic.
摘要翻译：目的：通过煅烧通过模制特定晶须材料粉末的混合物并在N2气氛中预煅烧成型体而获得的块体，容易且有效地形成烧结体块上的标题晶须。构成：将选自Al 2 O 3，Y 2 O 3，MgO，SiO 2等的Si 3 N 4和0.5〜10重量％的氧化物陶瓷和有机粘合剂如PVA的粉末混合物通过湿法混合，干燥，然后以板的形式或圆筒，并在600-1,000℃下预煅烧以获得圆柱形块。然后将该块在电炉中在1400-1,900℃的气态N 2气氛中煅烧，以在烧结体块的表面和内部形成直径约1μm的Si3N4晶须。烧结体块，其中在表面和内部均匀地形成Si 3 N 4晶须或浸渍有相同或不同种类的陶瓷粉末的块在1700℃下热压以便容易地获得陶瓷晶须增强复合材料陶瓷。

5. 发明专利

JPS59174600K1 JPS59174600K1 - 失效
公开(公告)号：JPS59174600K1
公开(公告)日：1984-10-03
申请号：JP5079383A
申请日：1983-03-25
CPC分类号： C30B23/007

6. 发明专利

JP2009522822A Growth method using nanostructured adaptation layer and hvpe for producing high-quality compound semiconductor material, a single crystal compound semiconductor material, and the substrate material 有权
公开(公告)号：JP2009522822A
公开(公告)日：2009-06-11
申请号：JP2008549935
申请日：2007-03-19
申请人：ナノガンリミテッドNanogan Limited
发明人：ナンワンワン
IPC分类号： H01L21/205 , C23C16/34
CPC分类号： C30B25/005 , C30B23/007 , C30B25/18 , C30B29/40 , C30B29/406 , C30B29/48 , C30B33/00 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0265 , H01L21/02653 , Y10T428/24612
摘要：ＨＶＰＥを利用し、ナノ構造層を使用して高品質の平坦かつ厚い化合物半導体（１５）を異種基板（１０）上に成長させる。半導体材料のナノ構造（１２）は、分子線エピタキシャル成長（ＭＢＥ）、化学気相成長（ＣＶＤ）、有機金属化学気相成長（ＭＯＣＶＤ）又はハイドライド気相エピタキシャル成長（ＨＶＰＥ）によって基板（１０）上に成長させることができる。化合物半導体の厚膜（１５）又はウェハは、ＨＶＰＥを使用したエピタキシャル横方向成長によってナノ構造（１２）上に成長させることができる。

7. 发明专利

JP4183067B2 Topological crystal body and the method of forming a transition metal chalcogenide 有权
公开(公告)号：JP4183067B2
公开(公告)日：2008-11-19
申请号：JP2002340094
申请日：2002-11-22
申请人：独立行政法人科学技術振興機構
发明人：聡丹田 , 和彦山谷 , 吉俊岡島 , 琢常田 , 憲之畠中 , 克彦稲垣
IPC分类号： C01B19/04 , C01G33/00 , C01G23/00 , C01G25/00 , C01G27/00 , C01G35/00 , C01G41/00 , C30B11/12 , C30B23/00 , C30B29/66
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, pi or 2pi. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.

8. 发明专利

JP2004175579A Topological crystal body of transition metal chalcogenide and method of forming the same 有权
公开(公告)号：JP2004175579A
公开(公告)日：2004-06-24
申请号：JP2002340094
申请日：2002-11-22
申请人： Japan Science & Technology Agency , 独立行政法人科学技術振興機構
发明人： TANDA SATOSHI , TOKIDA MIGAKU , OKAJIMA YOSHITOSHI , INAGAKI KATSUHIKO , YAMATANI KAZUHIKO , HATANAKA NORIYUKI
IPC分类号： C01B19/04 , C01G23/00 , C01G25/00 , C01G27/00 , C01G33/00 , C01G35/00 , C01G41/00 , C30B11/12 , C30B23/00 , C30B29/66
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： PROBLEM TO BE SOLVED: To provide a crystal body exhibiting effect corresponding the physical property and having a topological shape/structure in transition metal chalcogenides exhibiting peculiar physical property. SOLUTION: The method of forming the topological crystal body of the transition metal chalcogenide is performed by condensing fine liquid drops of chalchogen element in an atmosphere where the chalocogen elements such as S, Se and Te and the group IVb, Vb or VI transition element such as Ta, Zr, Ti, Hf and W are coexisting and circulating in a suspension state, adsorbing the fine whisker of the transition metal chalcogenide formed in the atmosphere on the liquid drops of the chalcogen element by the surface tension of the drops and growing the crystal as a loop wound around the surface of the liquid drops to form a loop like crystal body having a twist of 0, π or 2π. The loop forms a ribbon like opened loop or closed loop. The topological crystal body of the transition metal chalcogenide keeps the physical properties on the macro-structured loop and is applied for a quantum element such as SQUID(superconducting quantum interference device). COPYRIGHT: (C)2004,JPO

9. 发明专利

JPS59174600A Manufacture of needlelike silicon nitride crystal 失效
标题翻译： NEEDLELIKE硅酸盐晶体的制造
公开(公告)号：JPS59174600A
公开(公告)日：1984-10-03
申请号：JP5079383
申请日：1983-03-25
申请人： Toyota Motor Corp
发明人： KOJIMA KOUICHI
IPC分类号： C30B23/00 , C30B29/62
CPC分类号： C30B23/007 , C30B29/38
摘要： PURPOSE:To manufacture long-sized needlelike silicon nitride crystals by heating a starting material for silicon nitride at a specified temp. in a gaseous nitrogen atmosphere so as to crystallize silicon nitride at a specified temp. CONSTITUTION:A molded starting material 1 for silicon nitride having about 5-20mm. diameter and about 1-10mm. thickness and consisting essentially of 50- 70mol% silicon nitride, 5-15% yttria and 20-40% spinel is put in a crucible 2 of carbon or the like. A crystallizing wall body 3 of carbon or the like having many projections on the wall is placed on the crucible 2, and the whole system is maintained in a heat insulated state in a tightly sealed space. While keeping the whole system at about 1,200 deg.C, the starting material 1 is heated to 1,700- 1,950 deg.C, and gaseous nitrogen is fed from a lower part to an upper part. The gaseous nitrogen is heated to 1,700-1,950 deg.C by the material 1, and it is cooled to 1,300-1500 deg.C until it reaches the crystallizing zone. In the zone, needlelike silicon nitride crystals having about 1-3mm. length are deposited on the projections of the wall body 3. The crystals are colorless or white and transparent.
摘要翻译：目的：通过在特定温度下加热氮化硅原料来制造长针状氮化硅晶体。在气态氮气气氛中使氮化硅在规定温度下结晶。构成：用于氮化硅的模制起始材料1，其具有约5-20mm。直径约1-10mm。厚度并且基本上由50-70mol％的氮化硅，5-15％的氧化钇和20-40％的尖晶石组成，放入碳等的坩埚2中。在坩埚2上放置有在壁上具有许多突起的碳等的结晶壁体3，并且整个系统在紧密密封的空间中保持在绝热状态。在将整个系统保持在约1200摄氏度的同时，将起始材料1加热至1,700-1,950℃，并将气态氮从下部供给到上部。将气态氮通过材料1加热至1,700-1,950℃，并将其冷却至1300-1500℃，直到其达到结晶区。在该区域中，具有约1-3mm的针状氮化硅晶体。长度沉积在壁体3的突起上。晶体是无色或白色和透明的。

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