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2. 发明专利

JP5500898B2 Metal having a trench gate electrode - insulator - a method of manufacturing a semiconductor device 有权
公开(公告)号：JP5500898B2
公开(公告)日：2014-05-21
申请号：JP2009175470
申请日：2009-07-28
申请人：シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人：ダーウィッシュ，モハメド，エヌ． , ジャイルズ，フレデリック，ピー． , ホンルイ，カム , チェン，クオ−イン , テリル，カイル
IPC分类号： H01L29/78 , H01L21/336 , H01L29/08 , H01L29/423 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/42368 , H01L29/66734 , H01L29/7397 , H01L29/749
摘要： Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the substrate along the trench bottom. The thick insulative layer separates the trench gate from the drain region at the bottom of the trench yielding a reduced gate-to-drain capacitance making such MOSFETs suitable for high frequency applications. In an exemplary fabrication process embodiment, the thick insulative layer is deposited on the bottom of the trench. A thin insulative gate dielectric is formed on the exposed sidewall and is coupled to the thick insulative layer. A gate is formed in the remaining trench volume. The process is completed with body and source implants, passivation, and metallization.

3. 发明专利

JP2012169650A Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp 有权
标题翻译：三相功率MOSFET开关用作同步整流器或电压钳
公开(公告)号：JP2012169650A
公开(公告)日：2012-09-06
申请号：JP2012089822
申请日：2012-04-11
申请人： Siliconix Inc , シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人： WILLIAMS RICHARD K
IPC分类号： H01L27/04 , H01L29/76 , H01L21/329 , H01L21/336 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/06 , H01L27/088 , H01L29/10 , H01L29/78 , H01L29/861 , H01L29/94 , H02M3/158 , H02M7/217 , H03K17/695
CPC分类号： H01L29/7813 , H01L27/0248 , H01L29/1087 , H01L29/861 , H02M3/1588 , H02M7/217 , Y02B70/1466
摘要： PROBLEM TO BE SOLVED: To provide a MOSFET switch suitable for use as a synchronous rectifier in a power converter.SOLUTION: An N-channel power MOSFET with its source and body connected together and biased at a high positive voltage with respect to its drain is fabricated. A gate is controlled by a switch (1184) which selectively connects the gate to the source or to a voltage (VCP) enough to turn a channel of the MOSFET fully on. When the gate is connected to the source, the device functions as a "pseudo-Schottky" diode which turns on at a lower voltage and has a lower conductor resistance than a conventional PN junction. When the gate is connected to the positive voltage the channel of the MOSFET is turned fully on. This MOSFET switch reduces power loss and stored charge in the "break-before-make" time.
摘要翻译：要解决的问题：提供一种适用于功率转换器中的同步整流器的MOSFET开关。解决方案：制造其源极和主体连接在一起并相对于其漏极偏置在高正电压的N沟道功率MOSFET。栅极由开关（1184）控制，开关选择性地将栅极连接到源极或者将电压（VCP）足以使MOSFET的通道完全导通。当栅极连接到源极时，该器件用作“伪肖特基”二极管，其在较低电压下导通，并且具有比常规PN结更低的导体电阻。当栅极连接到正电压时，MOSFET的通道完全导通。该MOSFET开关在“断开”制造时间内减少了功率损耗和存储电荷。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP4671456B2 Of high cell density vertical trench gate type mosfet 有权
公开(公告)号：JP4671456B2
公开(公告)日：2011-04-20
申请号：JP14976099
申请日：1999-05-28
申请人：シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人：ウェイン・ビー・グラボウスキー , リチャード・ケイ・ウィリアムズ
IPC分类号： H01L29/78 , H01L21/336 , H01L27/02 , H01L27/04 , H01L27/07 , H01L29/06 , H01L29/10
CPC分类号： H01L27/0255 , H01L27/0727 , H01L29/0696 , H01L29/1095 , H01L29/7808 , H01L29/7813 , H01L29/7827
摘要： A vertical trench-gated power MOSFET includes MOSFET cells in the shape of longitudinal stripes. The body diffusion of each cell contains a relatively heavily-doped region which extends parallel to the length of the cell and contacts an overlying metal source/body contact layer at specific locations. In one embodiment, the contact is made at an end of the cell. In another embodiment, the contact is made at intervals along the length of the cell. In addition, the power MOSFET contains diode cells placed at intervals in the array of cells. The diode cells contain diodes connected in parallel with the MOSFET cells and protect the gate oxide layer lining the trenches from damage due to large electric fields and hot carrier injection. By restricting the areas where the body contact is made and using the diode cells, the width of the MOSFET cells can be reduced substantially, thereby reducing the on-resistance of the power MOSFET.

5. 发明专利

JP4597945B2 Lateral mosfet 有权
公开(公告)号：JP4597945B2
公开(公告)日：2010-12-15
申请号：JP2006319878
申请日：2006-11-28
申请人：シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人：リチャード・ケイ・ウィリアムズ
IPC分类号： H01L29/41 , H01L29/78 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L23/522 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/41758 , H01L29/4238 , H01L2924/0002 , H01L2924/00

6. 发明专利

JP2010161384A BiCDMOS STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： BiCDMOS结构及其制造方法
公开(公告)号：JP2010161384A
公开(公告)日：2010-07-22
申请号：JP2010025224
申请日：2010-02-08
申请人： Siliconix Inc , シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人： YILMAZ HAMZA , WILLIAMS RICHARD K , CORNELL MICHAEL E , CHEN JUN WEI
IPC分类号： H01L21/8249 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/761 , H01L21/8222 , H01L21/8228 , H01L21/8234 , H01L21/8238 , H01L21/8248 , H01L27/06 , H01L27/08 , H01L27/082 , H01L27/088 , H01L27/092 , H01L29/08 , H01L29/10 , H01L29/732 , H01L29/78 , H01L29/861
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0635 , H01L29/0638 , H01L29/0847 , H01L29/0878 , H01L29/1004 , H01L29/42368 , H01L29/66272 , H01L29/7322 , H01L29/7801 , H01L29/7809 , H01L29/7835 , H01L2924/0002 , Y10S148/009 , Y10S148/085 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a BiCDMOS structure implementing all of a DMOS (doubly diffused metal oxide silicon) power circuit, a CMOS (complementary metal oxide silicon) digital logic circuit and a complementary bipolar analog circuit on a single integrated circuit chip and a method of manufacturing the same. SOLUTION: The BiCDMOS structure includes an embedded insulating region 21B extending downward into a base layer 10, extending upward into an epitaxial layer 40 disposed on the base layer and disposed under an upper main surface of the epitaxial layer, an embedded well region 44B disposed only in the epitaxial layer and extending upward from an upper main surface of the embedded insulating region, and a well region 51B disposed in the epitaxial layer, extending downward from the upper main surface of the epitaxial layer into the epitaxial layer and having a lower main surface in contact with an upper main surface of the embedded well region, wherein a bipolar transistor is formed in the well region and a MOS transistor is formed on an upper main surface part of the epitaxial layer outside the well region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供实现DMOS（双扩散金属氧化物硅）电源电路，单个集成电路上的CMOS（互补金属氧化物硅）数字逻辑电路和互补双极性模拟电路的BiCDMOS结构芯片及其制造方法。解决方案：BiCDMOS结构包括向下延伸到基底层10中的嵌入式绝缘区域21B，向上延伸到设置在基底层上并设置在外延层的上主表面下方的外延层40中，嵌入阱区域 44B仅设置在外延层中并从嵌入绝缘区的上主表面向上延伸，以及设置在外延层中的阱区51B，其从外延层的上主表面向下延伸到外延层中，并具有下主表面与嵌入阱区的上主表面接触，其中在阱区中形成双极晶体管，并且在阱区外部的外延层的上主表面部分上形成MOS晶体管。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009224803A Power mosfet having voltage-clamped gate 有权
标题翻译：功率MOSFET具有电压钳位
公开(公告)号：JP2009224803A
公开(公告)日：2009-10-01
申请号：JP2009158635
申请日：2009-07-03
申请人： Siliconix Inc , シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人： WILLIAMS RICHARD K
IPC分类号： H01L21/822 , H01L27/04 , H02M1/00 , H02M1/32 , H03K17/0412 , H03K17/0812 , H03K17/16 , H03K19/003
CPC分类号： H02M1/32 , H03K17/04123 , H03K17/08122 , H03K17/163
摘要： PROBLEM TO BE SOLVED: To provide a voltage clamp for preventing a gate oxide film of a MOSFET from being damaged.
SOLUTION: The MOSFET comprises a voltage clamp, including one or more diodes that connect its gate and source. The voltage clamp is designed so as to break down at a predetermined voltage and thereby prevent its gate oxide layer from being damaged by an excessive source-gate voltage. The voltage clamp includes one or more parallel branches connected between the source and gate terminals of the MOSFET. Each branch includes at least one diode and a series of diodes is included, which is connected so as to break down or conduct in a forward direction depending on a desired clamping voltage when the gate-source voltage reaches a predetermined level. The diode or diodes to achieve a low clamping voltage are typically connected so as to conduct in a forward direction and the diode or diodes to achieve a high clamping voltage are connected so as to cause an avalanche breakdown.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供用于防止MOSFET的栅极氧化膜被损坏的电压钳。解决方案：MOSFET包括电压钳，包括连接其栅极和源极的一个或多个二极管。电压钳被设计成以预定电压分解，从而防止其栅极氧化层被过大的源极栅极电压损坏。电压钳包括在MOSFET的源极和栅极端子之间连接的一个或多个并联支路。每个分支包括至少一个二极管，并且包括一系列二极管，当栅极 - 源极电压达到预定水平时，该二极管被连接以根据期望的钳位电压沿正向分解或导通。用于实现低钳位电压的二极管或二极管通常连接成正向导通，并且连接二极管或二极管以实现高钳位电压，从而导致雪崩击穿。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP3943604B2 Lateral mosfet 失效
公开(公告)号：JP3943604B2
公开(公告)日：2007-07-11
申请号：JP12419994
申请日：1994-05-13
申请人：シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人：リチャード・ケイ・ウィリアムズ
IPC分类号： H01L29/41 , H01L29/78 , H01L21/336 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/41758 , H01L29/4238 , H01L2924/0002 , H01L2924/00

10. 发明专利

JP2005137196A Battery disconnect switch and battery disconnect switching system 有权
标题翻译：电池断开开关和电池断开开关系统
公开(公告)号：JP2005137196A
公开(公告)日：2005-05-26
申请号：JP2004373189
申请日：2004-12-24
申请人： Siliconix Inc , シリコニックス・インコーポレイテッドSiliconix Incorporated
发明人： WILLIAMS RICHARD K , BLATTNER ROBERT G
IPC分类号： H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/088 , H01M10/44 , H02H7/18 , H02J7/00 , H02J7/10 , H02J7/16
CPC分类号： H02J7/0031 , H03K2217/0018
摘要： PROBLEM TO BE SOLVED: To provide the battery disconnect switch or the battery disconnect switching system like that completely in either directions, that is, capable of blocking current and even of conducting the current in any direction. SOLUTION: The bidirectional battery disconnect switch includes a symmetrical switch MOSFET not accompanied with a short circuit between source/body and a circuit for connecting a body of the MOSFET to a terminal biased to more negative side than of source/drain of the switch MOSFET. COPYRIGHT: (C)2005,JPO&NCIPI

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