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    • 1. 发明专利
    • GAS SENSOR AND ITS MANUFACTURE
    • JPH11118747A
    • 1999-04-30
    • JP28572197
    • 1997-10-17
    • MIKUNI KOGYO KKOSAKA GAS CO LTDYANAGIDA HIROAKI
    • HORIUCHI HIDEYUKIHASUMI KAZUHISAOKADA OSAMUYANAGIDA HIROAKI
    • G01N27/12
    • PROBLEM TO BE SOLVED: To decrease a sensitivity to NO, No2 and SO2 gases relatively to a CO sensitivity by including sodium tungstate or sodium molybdate as an Na compound and adding one or more elements selected from B, Mg, etc. SOLUTION: An element part 11 formed of a metallic oxide semiconductor essentially consisting of CuO and having an Na compound and an assisting additive added thereto, and comb-like electrodes 12, 13 connected to the element part 11 for taking out an electric characteristic change due to the presence of a gas to be detected are formed on a ceramic substrate 14. The element part 11 is a thick film. A paste-like substance composed of the CuO, Na compound and assisting additive of particles as essential solid components is printed into touch with the comb-like electrodes 12, 13 and baked, whereby the element part is formed. At an operation time, a constant voltage is impressed between the comb-like electrodes 12 and 13, and a current change because of the presence of the gas to be detected is detected. A CO gas in an exhaust gas discharged from a burning appliance can be selectively detected and therefore the gas sensor is utilizable in various burning appliances.
    • 2. 发明专利
    • JPH05249064A
    • 1993-09-28
    • JP191593
    • 1993-01-08
    • MIKUNI KOGYO KKYANAGIDA HIROAKIOSAKA GAS CO LTD
    • HASUMI KAZUHISANAGANO KENTAROKAMIYAMA SHUICHIYANAGIDA HIROAKIOKADA OSAMU
    • G01N27/00G01N27/12
    • PURPOSE:To obtain a sensor having practical characteristics and selectivity for CO, by using an N-type semiconductor that contains ZnO as the main constituent and Al2O3 as an additive. CONSTITUTION:An electrode 13 is provided on the surface of a substrate 11 and a P-type semiconductor thick film 15 of which the main constituent is CuO is provided so that it is connected to the electrode. Besides, an electrode 14 is provided on the surface of a substrate 12 and an N-type semiconductor thick film 16 of which the main constituent is ZnO is provided on the surface of this electrode. The thick films 15 and 16 are in mechanical contact with each other and a gas containing a gas to be inspected in introduced into a contact part. The thick film 16 contains Al2O3 as an additive. By adding Al2O3 to the N-type semiconductor in this way, a current passing through the P-N junction is increased by about one figure. While the sensitivity to CO is almost absent in comparison with that to H2 and C3H8 when the purities of both CuO and ZnO, the sensitivity being equal approximately to that to H2 and C3H8 is obtained in relation to Co when Al2O3 is added to the N-type semiconductor.
    • 5. 发明专利
    • METHOD FOR DETECTING GAS AND GAS SENSOR
    • JPS6290529A
    • 1987-04-25
    • JP961386
    • 1986-01-20
    • YANAGIDA HIROAKIOSAKA GAS CO LTD
    • YANAGIDA HIROAKIOKADA OSAMUNAKAMURA YOSHINOBUTSURUYA TAKESHI
    • G01N27/12G01N27/04G01N27/22
    • PURPOSE:To selectively set sensitivity corresponding to the kind of gas to be detected, by simple constitution such that specimen gas is introduced into the gap between the contact surfaces of two kinds of semiconductive substances each having a rectifying characteristic and the change in the energy level of the potential barrier of each semiconductive substance surface corresponding to the kind of the gas is detected. CONSTITUTION:N-type and P-type semiconductive substances 1, 2 are mechanically held between ceramic substrates 3, 4 by a spring 5 and voltage is applied between lead wires 32, 42 and specimen gas G is introduced into the gap between the contact surfaces of the substances 1, 2 from the direction shown by an arrow to measure a voltage-current characteristic. The specimen gas is detected by utilizing that the energy level of the potential barrier of each semiconductive substance surface changes corresponding to the kind of the specimen gas. Different gas can be selectively detected by controlling voltage to be applied or heating temp. and it is unnecessary to heat an element to high temp. and measurement can be performed even in an atmosphere wherein the concn. of oxygen varies and the specimen gas can be detected with high sensitivity by simple constitution.
    • 6. 发明专利
    • CARBON MONOXIDE SENSOR
    • JP2000338072A
    • 2000-12-08
    • JP14670899
    • 1999-05-26
    • MIKUNI KOGYO KKYANAGIDA HIROAKIOSAKA GAS CO LTD
    • SUGANO KOJIHASUMI KAZUHISAYANAGIDA HIROAKIOKADA OSAMU
    • G01N27/12
    • PROBLEM TO BE SOLVED: To selectively and safely detect CO gas by disposing a filter absorbing NO, NO2 and SO2 and permitting carbon monoxide to pass to a passage for introducing gas to be detected into a detection element. SOLUTION: The surface of a detection element 1 is covered with a filter housing 12. An opening 13 is provided to the top part of the housing 12 and gas to be detected is introduced from the opening 13 to transmit through filters 7, 8 of a two-layered stucture while diffusing throughout them to arrive at the surface of the element 1. At this time, NO, NO2 and SO2 are adsorbed by activated carbon or reacted with alkali metal carbonate along with moisture contained in the gas to be detected to be reduced in the amt. arriving at the surface of the detection element 1. Contrarily, carbon monoxide is slight in the amt. adsorbed by activated carbon and not reacted with alkali metal carbonate. Therefore, the influence of NO, NO2, SO2 or the like on the detection element 1 is reduced and the detection sensitivity to carbon monoxide thereof is stabilized and carbon monoxide can be selectively detcted.
    • 8. 发明专利
    • GAS SENSOR
    • JPH06258270A
    • 1994-09-16
    • JP4128593
    • 1993-03-02
    • MIKUNI KOGYO KKYANAGIDA HIROAKIOSAKA GAS CO LTD
    • HASUMI KAZUHISANAGANO KENTAROKAMIYAMA SHUICHIYANAGIDA HIROAKIOKADA OSAMU
    • G01N27/12
    • PURPOSE:To provide a gas sensor formed by using a ceramic semiconductor by connecting electrodes to take out a change in an electric characteristic directly to a (p) type member formed of a (p) type semiconductor mainly composed of CuO. CONSTITUTION:A (p) type member 1 formed of a (p) type semiconductor mainly composed of CuO and two comb shape electrode 2 and 3 to take out a change in an electric characteristic are formed on a board 4. Both comb shape electrodes 2 and 3 are connected directly to the (p) type member 1. The (p) type member 1 is a thick film, and is formed by baking a paste-like material after the paste-like material formed by using CuO particles as a main solid component is printed so as to contact with the comb shape electrodes 2 and 3. When it is operated, constant voltage is impressed between the comb shape electrodes 2 and 3, and an electric current change caused by the existence of gas to be inspected is detected. In this gas sensor, detecting sensitivity to Co changes sharply from an almost no condition to a condition higher than detecting sensitivity to H2 or Ca3H8, so that selective detection of the Co becomes possible.
    • 9. 发明专利
    • METHOD FOR DETECTING GAS
    • JPS6290528A
    • 1987-04-25
    • JP10568086
    • 1986-05-07
    • YANAGIDA HIROAKIOSAKA GAS CO LTD
    • YANAGIDA HIROAKIOKADA OSAMUNAKAMURA YOSHINOBUTSURUYA TAKESHI
    • G01N27/12G01N27/04G01N27/22
    • PURPOSE:To detect carbon dioxide with high accuracy by simple constitution such that specimen gas is introduced into the gap between the contact surfaces of two kinds of semiconductive substances each having a rectifying characteristic and the change in the energy level of the potential barrier of each semiconductive substance surface corresponding to the kind of the gas is detected. CONSTITUTION:A N-type semiconductive substance 1 and P-type semiconductive substance 2 are mechanically held between ceramic substrates 3, 4 by a spring a 5 and specimen gas G is introduced into the gap between the contact surfaces of the substances 1, 2 from the direction shown by an arrow. Voltage is applied between the respective lead wires 32, 42 of contacted electrodes 11, 31 and 12, 41 and current are respectively measured in both states, that is, in a state wherein atmospheric gas such as nitrogen is present in the gap and in a state wherein the specimen gas was introduced into the gap. By ultilizing such a phenomenon that the energy level of the potential barrier of a semiconductive substance surface changes to a different value corresponding to the kind of the gas contained in the specimen gas, a minute amount of carbon dioxide can be detected at low temp. with high sensitivity by simple constitution.