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    • 1. 发明专利
    • METHOD FOR DETECTING GAS AND GAS SENSOR
    • JPS6290529A
    • 1987-04-25
    • JP961386
    • 1986-01-20
    • YANAGIDA HIROAKIOSAKA GAS CO LTD
    • YANAGIDA HIROAKIOKADA OSAMUNAKAMURA YOSHINOBUTSURUYA TAKESHI
    • G01N27/12G01N27/04G01N27/22
    • PURPOSE:To selectively set sensitivity corresponding to the kind of gas to be detected, by simple constitution such that specimen gas is introduced into the gap between the contact surfaces of two kinds of semiconductive substances each having a rectifying characteristic and the change in the energy level of the potential barrier of each semiconductive substance surface corresponding to the kind of the gas is detected. CONSTITUTION:N-type and P-type semiconductive substances 1, 2 are mechanically held between ceramic substrates 3, 4 by a spring 5 and voltage is applied between lead wires 32, 42 and specimen gas G is introduced into the gap between the contact surfaces of the substances 1, 2 from the direction shown by an arrow to measure a voltage-current characteristic. The specimen gas is detected by utilizing that the energy level of the potential barrier of each semiconductive substance surface changes corresponding to the kind of the specimen gas. Different gas can be selectively detected by controlling voltage to be applied or heating temp. and it is unnecessary to heat an element to high temp. and measurement can be performed even in an atmosphere wherein the concn. of oxygen varies and the specimen gas can be detected with high sensitivity by simple constitution.
    • 2. 发明专利
    • METHOD FOR DETECTING GAS
    • JPS6290528A
    • 1987-04-25
    • JP10568086
    • 1986-05-07
    • YANAGIDA HIROAKIOSAKA GAS CO LTD
    • YANAGIDA HIROAKIOKADA OSAMUNAKAMURA YOSHINOBUTSURUYA TAKESHI
    • G01N27/12G01N27/04G01N27/22
    • PURPOSE:To detect carbon dioxide with high accuracy by simple constitution such that specimen gas is introduced into the gap between the contact surfaces of two kinds of semiconductive substances each having a rectifying characteristic and the change in the energy level of the potential barrier of each semiconductive substance surface corresponding to the kind of the gas is detected. CONSTITUTION:A N-type semiconductive substance 1 and P-type semiconductive substance 2 are mechanically held between ceramic substrates 3, 4 by a spring a 5 and specimen gas G is introduced into the gap between the contact surfaces of the substances 1, 2 from the direction shown by an arrow. Voltage is applied between the respective lead wires 32, 42 of contacted electrodes 11, 31 and 12, 41 and current are respectively measured in both states, that is, in a state wherein atmospheric gas such as nitrogen is present in the gap and in a state wherein the specimen gas was introduced into the gap. By ultilizing such a phenomenon that the energy level of the potential barrier of a semiconductive substance surface changes to a different value corresponding to the kind of the gas contained in the specimen gas, a minute amount of carbon dioxide can be detected at low temp. with high sensitivity by simple constitution.