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1. 发明专利

JP2007073480A Flat lamp and its producing method 审中-公开
标题翻译：平板灯及其制作方法
公开(公告)号：JP2007073480A
公开(公告)日：2007-03-22
申请号：JP2005262430
申请日：2005-09-09
申请人： Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック
发明人： MURAKAMI HIROHIKO , TSUKAHARA NAOKI , NAKANO MINAO , HIRAKAWA MASAAKI , KOJIMA TOMOAKI , KAGEYAMA KAGEHIRO
IPC分类号： H01J63/06 , H01J1/304 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a flat lamp that is easy to control emission, and to provide a production method of the flat lamp achieving simplicity of process and low cost. SOLUTION: In a structure of a field emission display, having a cathode electrode with an emitter 43, a gate electrode 42, and an anode electrode 45, the gate electrode 42 and the cathode electrode 43 are arranged on the same plane and so that the display regions of these electrodes are parallel to each other. Furthermore, the interval between the cathode electrode with the emitter 43 and the gate electrode 42 is arranged so as to be 100 μm or smaller. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种容易控制发射的扁平灯，并提供一种实现工艺简单和低成本的扁平灯的生产方法。解决方案：在具有发射极43的阴极电极，栅极电极42和阳极电极45的场发射显示器的结构中，栅电极42和阴极电极43被布置在同一平面上，使得这些电极的显示区域彼此平行。此外，将阴极与发射极43和栅电极42之间的间隔配置为100μm以下。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2010142699A Method for producing exhaust gas catalyst by using coaxial vacuum arc vapor deposition source 审中-公开
标题翻译：使用同轴真空蒸气沉积源生产排气催化剂的方法
公开(公告)号：JP2010142699A
公开(公告)日：2010-07-01
申请号：JP2008320327
申请日：2008-12-16
申请人： Kumamoto Univ , Ulvac Japan Ltd , 国立大学法人熊本大学 , 株式会社アルバック
发明人： MACHIDA MASATO , AGAWA YOSHIAKI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： B01J37/02 , B01D53/94 , B01J23/63 , C23C14/14 , C23C14/24 , F01N3/10 , F01N3/28
摘要： PROBLEM TO BE SOLVED: To provide method for depositing a nanoparticle of an exhaust gas catalyst, and a method for producing the exhaust gas catalyst. SOLUTION: A pulse voltage is impressed between a trigger electrode 13 and a cathode 12 in a vacuum atmosphere by using a coaxial vacuum arc vapor deposition source 1 to generate trigger discharge. A capacitor and a DC power source are connected to each of the cathode 12 and an anode 11, and a DC discharge voltage of 60-100 V is impressed while keeping the capacitance of the capacitor within 360-1,080 μF to induce arc discharge intermittently. Charged particles of a catalytic metal to be produced are supplied to/vapor-deposited on the surface of a carrier being alumina powder or other alumina powder, in which an oxide of a metal consisting of zirconium or lanthanoid is mixed, to obtain the catalyst consisting of the catalytic metal nanoparticle-deposited carrier. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供沉积废气催化剂的纳米颗粒的方法，以及废气催化剂的制造方法。解决方案：通过使用同轴真空电弧气相沉积源1在真空气氛中在触发电极13和阴极12之间施加脉冲电压以产生触发放电。将电容器和直流电源连接到阴极12和阳极11中的每一个，并且施加60-100V的直流放电电压，同时将电容器的电容保持在360-1,080μF内以间歇地引起电弧放电。将要生产的催化金属的带电粒子供应至/蒸镀在氧化铝粉末或其它氧化铝粉末的载体的表面上，其中由锆或镧系元素组成的金属的氧化物混合，得到催化剂组成的催化金属纳米颗粒沉积载体。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009091644A Particulate formation device onto film using vacuum arc vapor deposition source 有权
标题翻译：使用真空蒸汽沉积源将膜形成装置置于胶片上
公开(公告)号：JP2009091644A
公开(公告)日：2009-04-30
申请号：JP2007266105
申请日：2007-10-12
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24 , B01J37/02 , C23C14/14 , C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a device for continuously forming particulates onto a polymer film.
SOLUTION: The particulate forming device 1 is provided with: a vacuum arc vapor deposition source 5 vapor-depositing a metallic material; a film running means 3 running a film 4 as the material to be vapor-deposited; and a controlling means 65 pulse-driving the vacuum arc vapor deposition source 5, and the vacuum arc vapor deposition sources 5 are arranged so as to be crossed to the running direction of the film 4 by two or more. In this way, uniformized particulates of high quality can be continuously formed on the film 4. Thus, mass-production is made possible.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于将颗粒连续地形成在聚合物膜上的装置。解决方案：颗粒形成装置1设置有：气相沉积金属材料的真空电弧气相沉积源5; 作为要气相沉积的材料的薄膜4的薄膜运行装置3; 以及对真空电弧蒸镀源5进行脉冲驱动的控制单元65，将真空电弧蒸镀源5配置成与膜4的行进方向交叉2以上。以这种方式，可以在膜4上连续地形成均匀的高质量的颗粒。因此，可以批量生产。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009084072A Manufacturing method of graphite nanofiber 有权
标题翻译：石墨纳米纤维的制造方法
公开(公告)号：JP2009084072A
公开(公告)日：2009-04-23
申请号：JP2007252172
申请日：2007-09-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C01B31/04 , B01J23/745 , B01J23/889 , C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of graphite nanofiber which can improve an electron emission property without giving damage to the carbon nanofiber itself. SOLUTION: The manufacturing method of graphite nanofiber has a step (P1) of depositing a membrane of a growing catalyst for graphite nanofiber onto a substrate, a step (P2) of growing the graphite nanofiber by supplying a raw material gas, and a step (P3) of heat-treating the grown graphite nanofiber using a treatment gas containing hydrogen. As the growing catalyst, iron, nickel, copper, cobalt, chromium, or an alloy containing one or more of these metals can be used. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可以提高电子发射性能而不损害碳纳米纤维本身的石墨纳米纤维的制造方法。石墨纳米纤维的制造方法具有将石墨纳米纤维的生长催化剂的膜沉积在基材上的工序（P1），通过供给原料气体来生长石墨纳米纤维的工序（P2），以及使用含氢处理气体对生长的石墨纳米纤维进行热处理的工序（P3）。作为生长催化剂，可以使用含有这些金属中的一种或多种的铁，镍，铜，钴，铬或合金。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008291319A Method for producing fine particle film 有权
标题翻译：生产细颗粒膜的方法
公开(公告)号：JP2008291319A
公开(公告)日：2008-12-04
申请号：JP2007138557
申请日：2007-05-25
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a fine particle film by which a fine particle film uniform in particle size can be formed.
SOLUTION: When a fine particle film of nano particle size is formed by using a coaxial type vacuum arc vapor deposition source 13, the discharge voltage between an anode electrode 21 and a cathode electrode 22 (a vapor deposition material 22A) is set in 50 to
摘要翻译：要解决的问题：提供可以形成颗粒尺寸均匀的细颗粒膜的细颗粒膜的制造方法。解决方案：通过使用同轴型真空电弧气相沉积源13形成纳米粒径的微粒膜时，设置阳极电极21和阴极电极22（蒸镀材料22A）之间的放电电压通过限制放电电压并限制放电时产生的电磁力的尺寸，可以避免从阳极电极21的开口21A释放的带电粒子中具有固定或更多粒子的巨大颗粒的共存，并且仅释放具有固定或更小粒度的细电荷粒子。以这种方式，当衬底布置在与阳极21的开口相对的位置时，带电粒子到达衬底W，并且可以在衬底的表面上形成具有高膜质量的致密薄膜。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006073321A Manufacturing method of ito film and ito transparent electrode film formation method 有权
标题翻译： ITO膜和ITO透明电极膜形成方法的制造方法
公开(公告)号：JP2006073321A
公开(公告)日：2006-03-16
申请号：JP2004254622
申请日：2004-09-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： H01B13/00 , G09F9/00 , G09F9/30
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a porous ITO film having a small refraction index and excellent light transmittance and allowing improvement of emission luminance to be expected; and to provide a low-resistance porous ITO electrode film formation method. SOLUTION: An organic solution containing indium, tin and alcohol is used and is heat-treated in the presence of a surface-active agent. For the surface-active agent, a nonionic surface-active agent such as nonyl phenol ethoxylate or octyl phenol ethoxylate of 5-20 wt.% with respect to the organic solution is used. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有小的折射率和优异的透光率的多孔ITO膜的制造方法，并且可以提高预期的发光亮度; 并提供低电阻多孔ITO电极膜形成方法。溶液：使用含有铟，锡和醇的有机溶液，并在表面活性剂的存在下进行热处理。对于表面活性剂，使用相对于有机溶液为5-20重量％的非离子表面活性剂如壬基酚乙氧基化物或辛基苯酚乙氧基化物。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2012238418A Negative electrode structure of lithium ion secondary battery, and method for manufacturing negative electrode structure of lithium ion secondary battery 有权
标题翻译：锂离子二次电池的负极结构及锂离子二次电池负极结构的制造方法
公开(公告)号：JP2012238418A
公开(公告)日：2012-12-06
申请号：JP2011105211
申请日：2011-05-10
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NOZUE TATSUHIRO , TSUKAHARA NAOKI , FUKUDA YOSHIRO , NAKANO MINAO , MURAKAMI HIROHIKO , YAMAKAWA HIROYUKI
IPC分类号： H01M4/133 , H01M4/1393 , H01M4/587 , H01M4/66
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To provide a negative electrode structure of a lithium ion secondary battery capable of improving the battery capacity, and a method for manufacturing the negative electrode structure of a lithium ion secondary battery.SOLUTION: The negative electrode structure of a lithium ion secondary battery comprises: a collector layer 12 composed of copper; an aluminum layer 13 provided on the collector layer 12; a promoter layer 15 provided on the aluminum layer 13 and composed of at least one of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, and nitrides of the metallic elements; a catalyst layer 16 provided on the promoter layer 15 and composed of iron; and carbon nanotubes 20 formed on the catalyst layer 16.
摘要翻译：解决的问题：提供能够提高电池容量的锂离子二次电池的负极结构，以及锂离子二次电池的负极结构体的制造方法。解决方案：锂离子二次电池的负极结构包括：由铜构成的集电体层12; 设置在集电体层12上的铝层13; 在铝层13上设置由金属元素的Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W和氮化物中的至少一种构成的助催化剂层15。设置在促进剂层15上并由铁构成的催化剂层16; 和形成在催化剂层16上的碳纳米管20.（C）2013，JPO＆INPIT

8. 发明专利

JP2012054112A Method of forming electrode active material layer for lithium secondary battery 审中-公开
标题翻译：形成用于锂二次电池的电极活性材料层的方法
公开(公告)号：JP2012054112A
公开(公告)日：2012-03-15
申请号：JP2010196135
申请日：2010-09-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： FUKUDA YOSHIRO , MURAKAMI HIROHIKO , TSUKAHARA NAOKI
IPC分类号： H01M4/139 , C23C14/08 , H01M4/13 , H01M4/48
CPC分类号： Y02E60/122
摘要： PROBLEM TO BE SOLVED: To provide a high productivity method of forming an electrode active material layer for a lithium secondary battery capable of forming an electrode active material layer of microcrystal vanadium pentoxide, where an amorphous structure and a layer crystal structure are mixed, in the form of a thin film on the surface of a base material made of an organic material of low heat resistance, and capable of attaining high battery performance when applied to a thin film lithium secondary battery.SOLUTION: A base material W is arranged in a processing chamber 11 with a target 2 containing vanadium, the processing chamber is evacuated to a predetermined pressure, the base material is held at a predetermined temperature equal to or lower than the heatproof temperature of the base material by heating or cooling, rare gas and oxygen gas are introduced into the processing chamber with predetermined partial-pressures, a plasma atmosphere is formed in the processing chamber by charging a predetermined power to the target and the target is sputtered thus forming a vanadium oxide film, i.e. an electrode active material layer.
摘要翻译：解决的问题：为了提供形成能够形成微晶五氧化二钒的电极活性物质层的锂二次电池的电极活性物质层的高生产率的方法，其中非晶结构和层状晶体结构被混合在由耐热性低的有机材料构成的基材的表面上形成薄膜，并且当应用于薄膜锂二次电池时能够获得高的电池性能。解决方案：将基材W布置在处理室11中，目标物2含有钒，将处理室抽真空至预定压力，基材保持在等于或低于耐热温度的预定温度通过加热或冷却将稀有气体和氧气以预定的分压引入处理室中，通过向目标物充电预定的功率而在处理室中形成等离子体气氛，从而形成溅射靶氧化钒膜，即电极活性物质层。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010050168A Method of fabricating nanodot, and floating gate transistor, and method of fabricating the same 审中-公开
标题翻译：制造NANODOT和浮动栅极晶体管的方法及其制造方法
公开(公告)号：JP2010050168A
公开(公告)日：2010-03-04
申请号：JP2008211147
申请日：2008-08-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： H01L21/8247 , B82B1/00 , B82B3/00 , C23C14/14 , C23C14/24 , H01L21/203 , H01L21/363 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating nanodots at low temperature through a small number of processes, to provide a floating gate transistor having the nanodots, and to provide a method of fabricating the same.
SOLUTION: A coaxial type vacuum arc vapor deposition source 1 is used to fabricate the nanodots 33, which are buried in an insulating layer 34 and hold electric charges, from a metal material or semiconductor material. The method includes the processes of forming an oxide film 32 on a substrate 31, fabricating the nanodots 33 on the oxide film 32, burying the nanodots by forming the insulating layer 34 on the nanodots, and forming an electrode film 35 on the insulating layer 34, thereby fabricating the floating gate transistor.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过少量工艺在低温下制造纳米点的方法，以提供具有纳米点的浮置栅极晶体管，并提供其制造方法。解决方案：同轴型真空电弧气相沉积源1用于制造埋在绝缘层34中并保持电荷的纳米点33与金属材料或半导体材料。该方法包括在基板31上形成氧化膜32的工序，在氧化膜32上制作纳米点33，在纳米点上形成绝缘层34，在绝缘层34上形成电极膜35 ，从而制造浮栅晶体管。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009242825A Method for embedding metallic material using coaxial vacuum arc vapor deposition source 审中-公开
标题翻译：使用同轴真空蒸镀沉积源嵌入金属材料的方法
公开(公告)号：JP2009242825A
公开(公告)日：2009-10-22
申请号：JP2008088134
申请日：2008-03-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/14 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for embedding a metallic material in a trench or a hole having a fine opening and a high aspect ratio.
SOLUTION: In a coaxial vacuum arc vapor deposition source 1, a cylindrical trigger electrode 13 and a cylindrical cathode electrode 12 having an evaporation material member 12a are arranged in a coaxially adjacently fixed state via a cylindrical electrical porcelain 15, and an anode electrode 11 is coaxially arranged around and apart from the cathode electrode. The coaxial vacuum arc vapor deposition source 1 is used to generate trigger discharge between the trigger electrode and the cathode electrode to intermittently induce arc discharge between the cathode electrode and the anode electrode to allow release of charged particles produced from the evaporation material member in a vacuum chamber to embed a metallic material in a trench or a hole.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种将金属材料嵌入沟槽或具有细孔和高纵横比的孔中的方法。解决方案：在同轴真空电弧气相沉积源1中，具有蒸发材料构件12a的圆柱形触发电极13和圆柱形阴极12经由圆柱形电瓷15以同轴相邻固定的状态布置，阳极电极11围绕和离开阴极同轴地布置。同轴真空电弧气相沉积源1用于在触发电极和阴极之间产生触发放电，以间断地在阴极和阳极之间引起电弧放电，以允许在真空中释放由蒸发材料构件产生的带电粒子将金属材料嵌入沟槽或孔中。版权所有（C）2010，JPO＆INPIT

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