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1. 发明专利

JP2010142699A Method for producing exhaust gas catalyst by using coaxial vacuum arc vapor deposition source 审中-公开
标题翻译：使用同轴真空蒸气沉积源生产排气催化剂的方法
公开(公告)号：JP2010142699A
公开(公告)日：2010-07-01
申请号：JP2008320327
申请日：2008-12-16
申请人： Kumamoto Univ , Ulvac Japan Ltd , 国立大学法人熊本大学 , 株式会社アルバック
发明人： MACHIDA MASATO , AGAWA YOSHIAKI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： B01J37/02 , B01D53/94 , B01J23/63 , C23C14/14 , C23C14/24 , F01N3/10 , F01N3/28
摘要： PROBLEM TO BE SOLVED: To provide method for depositing a nanoparticle of an exhaust gas catalyst, and a method for producing the exhaust gas catalyst. SOLUTION: A pulse voltage is impressed between a trigger electrode 13 and a cathode 12 in a vacuum atmosphere by using a coaxial vacuum arc vapor deposition source 1 to generate trigger discharge. A capacitor and a DC power source are connected to each of the cathode 12 and an anode 11, and a DC discharge voltage of 60-100 V is impressed while keeping the capacitance of the capacitor within 360-1,080 μF to induce arc discharge intermittently. Charged particles of a catalytic metal to be produced are supplied to/vapor-deposited on the surface of a carrier being alumina powder or other alumina powder, in which an oxide of a metal consisting of zirconium or lanthanoid is mixed, to obtain the catalyst consisting of the catalytic metal nanoparticle-deposited carrier. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供沉积废气催化剂的纳米颗粒的方法，以及废气催化剂的制造方法。解决方案：通过使用同轴真空电弧气相沉积源1在真空气氛中在触发电极13和阴极12之间施加脉冲电压以产生触发放电。将电容器和直流电源连接到阴极12和阳极11中的每一个，并且施加60-100V的直流放电电压，同时将电容器的电容保持在360-1,080μF内以间歇地引起电弧放电。将要生产的催化金属的带电粒子供应至/蒸镀在氧化铝粉末或其它氧化铝粉末的载体的表面上，其中由锆或镧系元素组成的金属的氧化物混合，得到催化剂组成的催化金属纳米颗粒沉积载体。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010018871A Coaxial type vacuum arc deposition source and vacuum deposition system 有权
标题翻译：同轴型真空沉积源和真空沉积系统
公开(公告)号：JP2010018871A
公开(公告)日：2010-01-28
申请号：JP2008182768
申请日：2008-07-14
申请人： Nagoya Institute Of Technology , Ulvac Japan Ltd , 国立大学法人名古屋工業大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI , TANEMURA MASAYUKI
IPC分类号： C23C14/32 , C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a coaxial type vacuum arc deposition source which can easily form an alloy film, and to provide a vacuum deposition system provided therewith. SOLUTION: The coaxial type vacuum arc deposition source 8 comprises: a cylindrical insulator 14; a vapor deposition material 80 arranged at the inner circumferential part of the insulator 14, and around which two or more metal foils 82 (82a, 82b) are wound in piles; a trigger electrode 13 arranged at the outer circumferential part of the insulator 14; and a cylindrical anode 23 arranged around the trigger electrode 13. In this way, production of alloy ingots of two or more metals is made needless. Further, formation of an alloy film of a material which is hardly alloyed is made possible. Further, by using three or more metal foils, an alloy film of ternary or more components can be easily formed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以容易地形成合金膜的同轴型真空电弧沉积源，并提供与其一起提供的真空沉积系统。解决方案：同轴型真空电弧沉积源8包括：圆柱形绝缘体14; 布置在绝缘体14的内圆周部分并且两个或多个金属箔82（82a，82b）缠绕在其中的蒸镀材料80; 布置在绝缘体14的外周部的触发电极13; 以及设置在触发电极13周围的圆柱形阳极23.以这种方式，不需要生产两种或更多种金属的合金锭。此外，可以形成难以合金化的材料的合金膜。此外，通过使用三种以上的金属箔，可以容易地形成三元以上的成分的合金膜。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009091644A Particulate formation device onto film using vacuum arc vapor deposition source 有权
标题翻译：使用真空蒸汽沉积源将膜形成装置置于胶片上
公开(公告)号：JP2009091644A
公开(公告)日：2009-04-30
申请号：JP2007266105
申请日：2007-10-12
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24 , B01J37/02 , C23C14/14 , C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a device for continuously forming particulates onto a polymer film.
SOLUTION: The particulate forming device 1 is provided with: a vacuum arc vapor deposition source 5 vapor-depositing a metallic material; a film running means 3 running a film 4 as the material to be vapor-deposited; and a controlling means 65 pulse-driving the vacuum arc vapor deposition source 5, and the vacuum arc vapor deposition sources 5 are arranged so as to be crossed to the running direction of the film 4 by two or more. In this way, uniformized particulates of high quality can be continuously formed on the film 4. Thus, mass-production is made possible.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于将颗粒连续地形成在聚合物膜上的装置。解决方案：颗粒形成装置1设置有：气相沉积金属材料的真空电弧气相沉积源5; 作为要气相沉积的材料的薄膜4的薄膜运行装置3; 以及对真空电弧蒸镀源5进行脉冲驱动的控制单元65，将真空电弧蒸镀源5配置成与膜4的行进方向交叉2以上。以这种方式，可以在膜4上连续地形成均匀的高质量的颗粒。因此，可以批量生产。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009088029A Method of manufacturing solar battery 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：JP2009088029A
公开(公告)日：2009-04-23
申请号：JP2007252599
申请日：2007-09-27
申请人： Kyushu Univ , Ulvac Japan Ltd , 国立大学法人九州大学 , 株式会社アルバック
发明人： YOSHITAKE TAKESHI , AGAWA YOSHIAKI , YAMAGUCHI KOICHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide the method of manufacturing a solar battery which has low running cost, which enables film deposition on a large area, and which enables use of a material that has few problems with resource depletion. SOLUTION: A cathode electrode 35 is composed of a graphite material to which a p-type impurity is doped. Hydrogen gas atmosphere is formed in a vacuum tank 11. A voltage is applied between an anode electrode 31 and the cathode electrode 35, a voltage is applied between a trigger electrode 37 and the cathode electrode 35, and a trigger discharge is generated. Arc discharge is generated between the cathode electrode 35 and the anode electrode 31, carbon steam is made to reach the front surface of a substrate 21 in the hydrogen gas atmosphere, and a p-type layer is formed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有低运行成本的太阳能电池的制造方法，其能够在大面积上进行膜沉积，并且能够使用资源消耗少的材料。解决方案：阴极35由掺杂p型杂质的石墨材料构成。在真空槽11中形成氢气气氛。在阳极电极31和阴极电极35之间施加电压，在触发电极37和阴极电极35之间施加电压，产生触发放电。在阴极电极35和阳极电极31之间产生电弧放电，在氢气气氛中使碳蒸汽到达衬底21的前表面，形成p型层。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008291319A Method for producing fine particle film 有权
标题翻译：生产细颗粒膜的方法
公开(公告)号：JP2008291319A
公开(公告)日：2008-12-04
申请号：JP2007138557
申请日：2007-05-25
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a fine particle film by which a fine particle film uniform in particle size can be formed.
SOLUTION: When a fine particle film of nano particle size is formed by using a coaxial type vacuum arc vapor deposition source 13, the discharge voltage between an anode electrode 21 and a cathode electrode 22 (a vapor deposition material 22A) is set in 50 to
摘要翻译：要解决的问题：提供可以形成颗粒尺寸均匀的细颗粒膜的细颗粒膜的制造方法。解决方案：通过使用同轴型真空电弧气相沉积源13形成纳米粒径的微粒膜时，设置阳极电极21和阴极电极22（蒸镀材料22A）之间的放电电压通过限制放电电压并限制放电时产生的电磁力的尺寸，可以避免从阳极电极21的开口21A释放的带电粒子中具有固定或更多粒子的巨大颗粒的共存，并且仅释放具有固定或更小粒度的细电荷粒子。以这种方式，当衬底布置在与阳极21的开口相对的位置时，带电粒子到达衬底W，并且可以在衬底的表面上形成具有高膜质量的致密薄膜。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008280578A Film deposition method of metal oxide film 有权
标题翻译：金属氧化膜薄膜沉积方法
公开(公告)号：JP2008280578A
公开(公告)日：2008-11-20
申请号：JP2007125521
申请日：2007-05-10
申请人： New Cosmos Electric Corp , Ulvac Japan Ltd , 新コスモス電機株式会社 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI , SHIMAZAKI RYOTARO , MAEKAWA TORU , MINAKOSHI TOMOYO
IPC分类号： C23C14/02 , C23C14/08 , C23C14/58
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method of a dense metal oxide film having a flat surface and high crystallization.
SOLUTION: A trigger electrode and a cathode electrode with at least its tip end being constituted of a metallic material for vapor deposition are coaxially fixed adjacent to each other across an insulation porcelain. Metal oxide particles are formed by performing vapor deposition of the metallic material constituting the cathode electrode on a substrate placed in a film deposition apparatus in an oxidizing atmosphere by using a coaxial type vacuum arc vapor deposition source in which cylindrical anode electrodes are separately arranged in a coaxial manner around the cathode electrode. Then, a metal oxide film is deposited on the particles of the metal oxide by using the vapor deposition source having a sputtering target constituted of the same metallic material as the cathode electrode or the oxide of the metallic material, and the substrate with the film vapor-deposited thereon is heated.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有平坦表面和高结晶度的致密金属氧化物膜的成膜方法。解决方案：触发电极和至少其末端由用于气相沉积的金属材料构成的阴极同时固定在绝缘陶瓷上。通过使用同轴型真空电弧气相沉积源，将构成阴极电极的金属材料在放置在氧化气氛中的成膜装置的基板上进行气相沉积，形成金属氧化物颗粒，其中圆柱形阳极电极分开布置在围绕阴极电极同轴。然后，通过使用具有由与阴极电极或金属材料的氧化物相同的金属材料构成的溅射靶的气相沉积源，将金属氧化物膜沉积在金属氧化物的颗粒上，并且将具有膜蒸气再次沉积在其上。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008095163A Method of forming nanometal particle and method of forming nanometal thin film, and method of controlling size of nanometal particle 审中-公开
标题翻译：形成纳米颗粒的方法和形成纳米薄膜的方法和控制纳米颗粒尺寸的方法
公开(公告)号：JP2008095163A
公开(公告)日：2008-04-24
申请号：JP2006280929
申请日：2006-10-16
申请人： Osaka Univ , Ulvac Japan Ltd , 国立大学法人大阪大学 , 株式会社アルバック
发明人： KAWAI TOMOJI , KAWAHARA TOSHIO , AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , MATSUURA MASAMICHI
IPC分类号： C23C14/24 , B22F9/14 , B82B3/00 , C23C14/06 , H01M4/88
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a method of forming nanometal particles with prescribed particle sizes and a method of forming a metal thin film composed of the nanoparticles, both method using a coaxial vacuum arc deposition device, and to provide a method of controlling the particle sizes of the nanometal particles. SOLUTION: Using the coaxial vacuum arc deposition device equipped with a coaxial vacuum arc deposition source having a capacitor at the vicinity thereof, a trigger discharge is generated in such a manner that discharge time in the main discharge is controlled to ≤1,000 μm, and further, peak current value has a discharge waveform of ≥2,000 A and arc discharge is induced. Further, while heating a substrate to ≥400°C, metal particles produced from a cathode electrode are released into a chamber, and nanometal particles or a thin film composed of the nanometal particles is formed on the substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有规定粒径的纳米金属颗粒的方法和形成由纳米颗粒构成的金属薄膜的方法，两种方法使用同轴真空电弧沉积装置，并提供一种方法控制纳米金属颗粒的粒度。
解决方案：使用配备有在其附近具有电容器的同轴真空电弧沉积源的同轴真空电弧沉积装置，产生触发放电，使得主放电中的放电时间被控制为≤1,000μm 此外，峰值电流值具有≥2,000A的放电波形，并且产生电弧放电。此外，在将基板加热至≥400℃的同时，将从阴极电极生成的金属粒子释放到室内，在基板上形成纳米级颗粒或由纳米金属颗粒构成的薄膜。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008001925A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2008001925A
公开(公告)日：2008-01-10
申请号：JP2006170676
申请日：2006-06-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , MATSUURA MASAMICHI , SAITO ATSUSHI
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of implanting an alloy in an object for film deposition. SOLUTION: The film deposition apparatus has first and second coaxial vapor deposition sources 3a, 3b. The positively charged microparticles are emitted from first and second apertures 39a, 39b of the first and second vapor deposition sources 3a, 3b, and the charged microparticles are deflected in its flight direction by the coulomb force and reach a surface of an object 68 for film deposition. When the negative voltage is applied to the surface of the object 68, the flying speed of the charged microparticles is accelerated, and the charged microparticles are implanted in the surface of the object 68. An alloy can be implanted in the surface of the object 68 if using different metallic materials for vapor deposition materials of the first and second coaxial vapor deposition sources 3a, 3b. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够将合金注入到用于膜沉积的物体中的成膜装置。解决方案：成膜装置具有第一和第二同轴气相沉积源3a，3b。带正电的微粒从第一和第二气相沉积源3a，3b的第一和第二孔39a，39b发射，并且带电的微粒在其飞行方向上以库仑力偏转并到达物体68的表面用于膜沉积。当对物体68的表面施加负电压时，加速带电微粒的飞行速度，并且将带电微粒注入到物体68的表面中。可以将合金注入到物体68的表面如果使用不同的金属材料用于第一和第二同轴气相沉积源3a，3b的气相沉积材料。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007277635A Coating apparatus and coating method 有权
标题翻译：涂装和涂装方法
公开(公告)号：JP2007277635A
公开(公告)日：2007-10-25
申请号：JP2006105326
申请日：2006-04-06
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , AMANO SHIGERU , HARA YASUHIRO , MATSUURA MASAMICHI , SAKAE KENICHIRO , SAITO ATSUSHI
IPC分类号： C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a coating film having high mold release characteristics and durability.
SOLUTION: This coating method comprises the steps of: injecting chromium into the surface of objects to be film-formed 4a and 4b to form a chromium film thereon; injecting platinum ions into the surface of the chromium film; forming a platinum thin film on the surface; and injecting platinum ions into the surface. The method of injecting the chromium ion or the platinum ion comprises the steps of: making injecting devices 32
1 and 32
2 generate a trigger electric discharge therein by a trigger voltage to induce an arc discharge; consequently making a cathode emit the chromium ions and the platinum ions; and simultaneously applying a negative bias voltage of a pulse form to the object to be film-formed 4a and 4b, so as to synchronize with the arc discharge. Then, adhesiveness between an injected layer and a thin film is improved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有高脱模特性和耐久性的涂膜。解决方案：该涂覆方法包括以下步骤：将铬注入到待成膜的物体4a和4b的表面上以在其上形成铬膜; 将铂离子注入铬膜的表面; 在表面形成铂薄膜; 并将铂离子注入表面。注入铬离子或铂离子的方法包括以下步骤：使注入装置32 1 和32 2 通过触发电压产生触发放电，以诱发电弧放电; 从而使阴极发出铬离子和铂离子; 并且同时向待成膜的物体4a和4b施加脉冲形式的负偏压，以便与电弧放电同步。因此，注入层与薄膜之间的粘合性提高。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2006312764A Vapor deposition apparatus 有权
标题翻译：蒸气沉积装置
公开(公告)号：JP2006312764A
公开(公告)日：2006-11-16
申请号：JP2005135854
申请日：2005-05-09
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/24 , H01L21/285 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To form a thin film free from a defect with the use of a coaxial-type vacuum-arc vapor-deposition source.
SOLUTION: This vapor deposition apparatus has a cathode 43 arranged outside an opening of a pipe-shaped anode 31 so that a huge droplet radially springing out from the cathode 43 can not collide with a wall surface of the anode 31 and can not produce a small droplet. The huge droplet having sprung out toward a holder 12 collides with a rotating blade member 22 and can not pass through a filtering device 20. Only microparticles pass through it and form the thin film free from the defect on the surface of an object 5 to be film-formed.
COPYRIGHT: (C)2007,JPO&INPIT

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