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1. 发明专利

JP2009088029A Method of manufacturing solar battery 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：JP2009088029A
公开(公告)日：2009-04-23
申请号：JP2007252599
申请日：2007-09-27
申请人： Kyushu Univ , Ulvac Japan Ltd , 国立大学法人九州大学 , 株式会社アルバック
发明人： YOSHITAKE TAKESHI , AGAWA YOSHIAKI , YAMAGUCHI KOICHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide the method of manufacturing a solar battery which has low running cost, which enables film deposition on a large area, and which enables use of a material that has few problems with resource depletion. SOLUTION: A cathode electrode 35 is composed of a graphite material to which a p-type impurity is doped. Hydrogen gas atmosphere is formed in a vacuum tank 11. A voltage is applied between an anode electrode 31 and the cathode electrode 35, a voltage is applied between a trigger electrode 37 and the cathode electrode 35, and a trigger discharge is generated. Arc discharge is generated between the cathode electrode 35 and the anode electrode 31, carbon steam is made to reach the front surface of a substrate 21 in the hydrogen gas atmosphere, and a p-type layer is formed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有低运行成本的太阳能电池的制造方法，其能够在大面积上进行膜沉积，并且能够使用资源消耗少的材料。解决方案：阴极35由掺杂p型杂质的石墨材料构成。在真空槽11中形成氢气气氛。在阳极电极31和阴极电极35之间施加电压，在触发电极37和阴极电极35之间施加电压，产生触发放电。在阴极电极35和阳极电极31之间产生电弧放电，在氢气气氛中使碳蒸汽到达衬底21的前表面，形成p型层。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008202073A Diamond thin film formation method 有权
标题翻译：金刚石薄膜形成方法
公开(公告)号：JP2008202073A
公开(公告)日：2008-09-04
申请号：JP2007037361
申请日：2007-02-19
申请人： Kyushu Univ , Ulvac Japan Ltd , 国立大学法人九州大学 , 株式会社アルバック
发明人： YOSHITAKE TAKESHI , NAGAYAMA KUNIHITO , AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI
IPC分类号： C23C14/06 , C03B11/00
摘要： PROBLEM TO BE SOLVED: To provide a technique for coating a die with ultrananocrystal diamond (UNCD) film.
SOLUTION: Trigger discharge is generated between a cathode electrode 142 composed of graphite and a trigger electrode 144, arc discharge is induced between an anode electrode 141 and the cathode electrode 142 and the ions of carbon vapor are released into a vacuum tank 10. The inside of the vacuum tank 10 is made into a hydrogen gas atmosphere, and the carbon vapor having charges is made to reach a die 20. When an intermediate layer 21 composed of an SiC film is formed on the surface of the die 20, ultrananocrystal diamond (UNCD) grows.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用超级晶体金刚石（UNCD）膜涂覆模具的技术。解决方案：在由石墨构成的阴极电极142和触发电极144之间产生触发放电，在阳极141和阴极142之间产生电弧放电，并将碳蒸气的离子释放到真空槽10中将真空槽10的内部制成氢气气氛，使具有电荷的碳蒸汽到达模具20.当在模具20的表面上形成由SiC膜构成的中间层21时，超极晶钻石（UNCD）成长。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010018871A Coaxial type vacuum arc deposition source and vacuum deposition system 有权
标题翻译：同轴型真空沉积源和真空沉积系统
公开(公告)号：JP2010018871A
公开(公告)日：2010-01-28
申请号：JP2008182768
申请日：2008-07-14
申请人： Nagoya Institute Of Technology , Ulvac Japan Ltd , 国立大学法人名古屋工業大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI , TANEMURA MASAYUKI
IPC分类号： C23C14/32 , C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a coaxial type vacuum arc deposition source which can easily form an alloy film, and to provide a vacuum deposition system provided therewith. SOLUTION: The coaxial type vacuum arc deposition source 8 comprises: a cylindrical insulator 14; a vapor deposition material 80 arranged at the inner circumferential part of the insulator 14, and around which two or more metal foils 82 (82a, 82b) are wound in piles; a trigger electrode 13 arranged at the outer circumferential part of the insulator 14; and a cylindrical anode 23 arranged around the trigger electrode 13. In this way, production of alloy ingots of two or more metals is made needless. Further, formation of an alloy film of a material which is hardly alloyed is made possible. Further, by using three or more metal foils, an alloy film of ternary or more components can be easily formed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以容易地形成合金膜的同轴型真空电弧沉积源，并提供与其一起提供的真空沉积系统。解决方案：同轴型真空电弧沉积源8包括：圆柱形绝缘体14; 布置在绝缘体14的内圆周部分并且两个或多个金属箔82（82a，82b）缠绕在其中的蒸镀材料80; 布置在绝缘体14的外周部的触发电极13; 以及设置在触发电极13周围的圆柱形阳极23.以这种方式，不需要生产两种或更多种金属的合金锭。此外，可以形成难以合金化的材料的合金膜。此外，通过使用三种以上的金属箔，可以容易地形成三元以上的成分的合金膜。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009091644A Particulate formation device onto film using vacuum arc vapor deposition source 有权
标题翻译：使用真空蒸汽沉积源将膜形成装置置于胶片上
公开(公告)号：JP2009091644A
公开(公告)日：2009-04-30
申请号：JP2007266105
申请日：2007-10-12
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24 , B01J37/02 , C23C14/14 , C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a device for continuously forming particulates onto a polymer film.
SOLUTION: The particulate forming device 1 is provided with: a vacuum arc vapor deposition source 5 vapor-depositing a metallic material; a film running means 3 running a film 4 as the material to be vapor-deposited; and a controlling means 65 pulse-driving the vacuum arc vapor deposition source 5, and the vacuum arc vapor deposition sources 5 are arranged so as to be crossed to the running direction of the film 4 by two or more. In this way, uniformized particulates of high quality can be continuously formed on the film 4. Thus, mass-production is made possible.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于将颗粒连续地形成在聚合物膜上的装置。解决方案：颗粒形成装置1设置有：气相沉积金属材料的真空电弧气相沉积源5; 作为要气相沉积的材料的薄膜4的薄膜运行装置3; 以及对真空电弧蒸镀源5进行脉冲驱动的控制单元65，将真空电弧蒸镀源5配置成与膜4的行进方向交叉2以上。以这种方式，可以在膜4上连续地形成均匀的高质量的颗粒。因此，可以批量生产。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008291319A Method for producing fine particle film 有权
标题翻译：生产细颗粒膜的方法
公开(公告)号：JP2008291319A
公开(公告)日：2008-12-04
申请号：JP2007138557
申请日：2007-05-25
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , TSUKAHARA NAOKI , MURAKAMI HIROHIKO
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a fine particle film by which a fine particle film uniform in particle size can be formed.
SOLUTION: When a fine particle film of nano particle size is formed by using a coaxial type vacuum arc vapor deposition source 13, the discharge voltage between an anode electrode 21 and a cathode electrode 22 (a vapor deposition material 22A) is set in 50 to
摘要翻译：要解决的问题：提供可以形成颗粒尺寸均匀的细颗粒膜的细颗粒膜的制造方法。解决方案：通过使用同轴型真空电弧气相沉积源13形成纳米粒径的微粒膜时，设置阳极电极21和阴极电极22（蒸镀材料22A）之间的放电电压通过限制放电电压并限制放电时产生的电磁力的尺寸，可以避免从阳极电极21的开口21A释放的带电粒子中具有固定或更多粒子的巨大颗粒的共存，并且仅释放具有固定或更小粒度的细电荷粒子。以这种方式，当衬底布置在与阳极21的开口相对的位置时，带电粒子到达衬底W，并且可以在衬底的表面上形成具有高膜质量的致密薄膜。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008280578A Film deposition method of metal oxide film 有权
标题翻译：金属氧化膜薄膜沉积方法
公开(公告)号：JP2008280578A
公开(公告)日：2008-11-20
申请号：JP2007125521
申请日：2007-05-10
申请人： New Cosmos Electric Corp , Ulvac Japan Ltd , 新コスモス電機株式会社 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI , SHIMAZAKI RYOTARO , MAEKAWA TORU , MINAKOSHI TOMOYO
IPC分类号： C23C14/02 , C23C14/08 , C23C14/58
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method of a dense metal oxide film having a flat surface and high crystallization.
SOLUTION: A trigger electrode and a cathode electrode with at least its tip end being constituted of a metallic material for vapor deposition are coaxially fixed adjacent to each other across an insulation porcelain. Metal oxide particles are formed by performing vapor deposition of the metallic material constituting the cathode electrode on a substrate placed in a film deposition apparatus in an oxidizing atmosphere by using a coaxial type vacuum arc vapor deposition source in which cylindrical anode electrodes are separately arranged in a coaxial manner around the cathode electrode. Then, a metal oxide film is deposited on the particles of the metal oxide by using the vapor deposition source having a sputtering target constituted of the same metallic material as the cathode electrode or the oxide of the metallic material, and the substrate with the film vapor-deposited thereon is heated.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有平坦表面和高结晶度的致密金属氧化物膜的成膜方法。解决方案：触发电极和至少其末端由用于气相沉积的金属材料构成的阴极同时固定在绝缘陶瓷上。通过使用同轴型真空电弧气相沉积源，将构成阴极电极的金属材料在放置在氧化气氛中的成膜装置的基板上进行气相沉积，形成金属氧化物颗粒，其中圆柱形阳极电极分开布置在围绕阴极电极同轴。然后，通过使用具有由与阴极电极或金属材料的氧化物相同的金属材料构成的溅射靶的气相沉积源，将金属氧化物膜沉积在金属氧化物的颗粒上，并且将具有膜蒸气再次沉积在其上。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006190563A Sputter ion pump 审中-公开
标题翻译：飞溅离子泵
公开(公告)号：JP2006190563A
公开(公告)日：2006-07-20
申请号：JP2005001303
申请日：2005-01-06
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： YAMAGUCHI KOICHI , NAKAZAWA NOBUHIKO , CHIN KOKUKA , HARA YASUHIRO
IPC分类号： H01J41/20
摘要： PROBLEM TO BE SOLVED: To provide a sputter ion pump which can be mounted easily in a space necessary to maintain a super high vacuum.
SOLUTION: The sputter ion pump is composed of a main body 2 demarcated by a contour-shaped wall formed by arranging three wedge-shaped convex parts 2f with a wide outer peripheral side and a narrow inner peripheral side arranged at every 120°, with its bottom face opened, a cathode electrode 3 formed on the inner wall of the main body formed in a shape same as that of the inner wall, pipe main bodies 4b arranged in the cathode electrode 3, of which openings at both ends are cut in round slices in parallel with the face of the cathode electrode 3, and the inner peripheral side is located on a circumference almost same as that of the face of the cathode electrode 3, anode electrodes 4 of which the inner peripheral side is located on a circumference almost same as that of the inner peripheral side of the cathode electrode 3, a supporting rod 7 concurrently serving as a draw out part of the anode electrode 4 and a mounting part, hung down at a central part of the circumference from a ceiling face side, and three columnar magnets 8 having sector-shaped cross section arranged so as to contact the recess parts formed between outside of the convex parts 2f. An S-pole of the magnets 8 is arranged so as to face an N-pole of adjacent magnets 8.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以容易地安装在保持超高真空所需的空间中的溅射离子泵。解决方案：溅射离子泵由主体2构成，主体2由轮廓形状的壁划分，该主体2通过布置三个楔形凸部2f而形成，该楔形凸部具有宽的外周侧和每120°设置的窄的内周侧在其底面打开时，形成在主体内壁上形成为与内壁相同形状的阴极电极3，布置在阴极电极3中的管主体4b，其两端开口为与阴极电极3的表面平行地切割成圆形切片，并且内周侧位于与阴极电极3的表面大致相同的圆周上，其内周侧位于其上的阳极电极4 与阴极电极3的内周侧几乎相同的圆周，同时用作阳极电极4的拉出部分的支撑杆7和安装部分，从AC周围悬挂在圆周的中心部分并且具有扇形横截面的三个柱状磁体8布置成与形成在凸部2f的外侧之间的凹部接触。磁体8的S极配置成与相邻磁体8的N极相对。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2004176127A Film deposition method 审中-公开
公开(公告)号：JP2004176127A
公开(公告)日：2004-06-24
申请号：JP2002343489
申请日：2002-11-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , YAMAGUCHI KOICHI
IPC分类号： C23C14/06 , C23C14/24 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To obtain a silicide film in which silicon and a metal are bonded in a desired ratio.
SOLUTION: In the film deposition method, among particles in a vapor depositing material, only micro-electrically charged particles 83 having a high charge mass ratio reach a treating object 52. The micro-electrically charged particles 83 have extremely high reactivity to reaction gas, and have high bonding reaction efficiency with the reaction gas, so that, a silicide film having a higher silicon concentration can be deposited as the concentration of the reaction gas is made higher. Thus, the partial pressure of the reaction gas and the bonding ratio between the silicon and metal are previously obtained per film deposition condition such as the kind of the vapor depositing material 31 and the kind of the reaction gas, and the partial pressure of the reaction gas is controlled on the basis of the result, so that the silicide film having a desired bonding ratio can be obtained.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2010018870A Coaxial type vacuum arc deposition source and vacuum deposition system 有权
标题翻译：同轴型真空沉积源和真空沉积系统
公开(公告)号：JP2010018870A
公开(公告)日：2010-01-28
申请号：JP2008182767
申请日：2008-07-14
申请人： Nagoya Institute Of Technology , Ulvac Japan Ltd , 国立大学法人名古屋工業大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , YAMAGUCHI KOICHI , TANEMURA MASAYUKI , MIYAWAKI TSUGIKO
IPC分类号： C23C14/32 , C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a coaxial type vacuum arc deposition source which can obtain stable initial discharge by bringing a vapor deposition material into tight-contact with an insulating member, and to provide a vacuum deposition system provided therewith.
SOLUTION: The coaxial type vacuum arc deposition source 5 comprises: cylindrical insulator 14; a vapor deposition material 11 arranged at the inner circumferential part of the insulator 14 and whose outer circumferential part is brought into elastic-contact with the inner circumferential part of the insulator 14; a trigger electrode 13 arranged at the outer circumferential part of the insulator 14; and a cylindrical anode electrode 23 concentrically arranged around the trigger electrode 13. In this way, the adhesion between the vapor deposition material 11 and the insulator 14 can be always maintained, thus the stable discharge operation of the vapor deposition source 5 can be secured.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过使蒸镀材料与绝缘构件紧密接触而能够获得稳定的初始放电的同轴型真空电弧沉积源，并提供与其一起提供的真空沉积系统。解决方案：同轴型真空电弧沉积源5包括：圆柱形绝缘体14; 布置在绝缘体14的内周部并且其外周部与绝缘体14的内周部弹性接触的蒸镀材料11; 布置在绝缘体14的外周部的触发电极13; 以及同心地布置在触发电极13周围的圆筒形阳极电极23.以这种方式，可以始终保持气相沉积材料11和绝缘体14之间的粘附，从而可以确保气相沉积源5的稳定的放电操作。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009179835A Coaxial vacuum arc vapor deposition source and vacuum vapor deposition apparatus 有权
标题翻译：同轴真空蒸汽沉积源和真空蒸发器沉积装置
公开(公告)号：JP2009179835A
公开(公告)日：2009-08-13
申请号：JP2008018542
申请日：2008-01-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , MATSUURA MASAMICHI , NAKANO MINAO , MURAKAMI HIROHIKO
IPC分类号： C23C14/24 , C23C14/32
摘要： PROBLEM TO BE SOLVED: To stabilize the amount of vapor deposition by improving reproducibility of the amount of the vapor deposition for each batch in a vacuum processing apparatus using a coaxial vacuum arc vapor deposition source. SOLUTION: A coaxial vacuum arc vapor deposition source 5 includes an annular trigger electrode 13, a cathode electrode 12, a columnar vapor deposition material 11 having one end connected to the cathode electrode 12, and the other end opposite thereto with at least one of the one end and the other end chamfered, electrical porcelains 14 arranged between the trigger electrode 13 and the vapor deposition material 11, and between the trigger electrode 13 and the cathode electrode 12, and a cylindrical anode electrode 23 arranged around the trigger electrode and having an opening in one end. Thus, even when the vapor deposition material 11 is consumed, the curved surface of its end circumferential edge is maintained, the angle of emission of evaporated particles is consistent, and reproducibility of the vapor deposition is improved. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在使用同轴真空电弧气相沉积源的真空处理装置中提高每个批次的气相沉积量的再现性，来稳定气相沉积量。解决方案：同轴真空电弧气相沉积源5包括环形触发电极13，阴极12，一端连接到阴极12的柱状气相沉积材料11，至少与其相对的另一端一端和另一端倒角，布置在触发电极13和蒸镀材料11之间以及触发电极13和阴极12之间的电瓷14和布置在触发电极周围的圆筒形阳极电极23 并且在一端具有开口。因此，即使当蒸镀材料11被消耗时，其端部圆周边缘的曲面被保持，蒸发颗粒的发射角一致，并且气相沉积的再现性提高。版权所有（C）2009，JPO＆INPIT

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