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1. 发明专利

JP2003239069A METHOD AND SYSTEM FOR MANUFACTURING THIN FILM 审中-公开
公开(公告)号：JP2003239069A
公开(公告)日：2003-08-27
申请号：JP2002037825
申请日：2002-02-15
申请人： ULVAC CORP
发明人： ARAI MAKOTO , ISHIBASHI AKIRA , KOMATSU TAKASHI , NAKAMURA HAJIME , KIYOTA JUNYA , SUGIURA ISAO
IPC分类号： C23C14/35
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing system by which a thin film, such as an oxide transparent conductive film, can be deposited at a low cost with high productivity by increasing the number of magnetron magnetic circuits located on the back side of a cathode. SOLUTION: In the system where the thin film is continuously deposited onto a substrate moving in the position facing a cathode arranged in a sputtering chamber by sputtering a target material located on the surface of the cathode, two magnetron magnetic circuits are arranged on the back side of the cathode of equipotential and constituted in such a way that two magnetron plasmas each having a closed loop can be generated. Moreover, in the manufacturing method, magnetron plasmas having ≥400 G magnetic field intensity and each having a closed loop are generated on the surface of the target located on the surface of the cathode by using the two magnetron magnetic circuits arranged on the back side of the cathode of equipotential, and sputtering voltage at the magnetron-plasma generation is made to ≤350 V. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003170524A LAMINATE HAVING Ag-BASED FILM AND METHOD FOR FORMING Ag-BASED FILM 有权
公开(公告)号：JP2003170524A
公开(公告)日：2003-06-17
申请号：JP2001375288
申请日：2001-12-10
申请人： ULVAC CORP
发明人： KITO YUMI , ISHIBASHI AKIRA , KOMATSU TAKASHI , NAKAMURA HAJIME , KIYOTA JUNYA , ARAI MAKOTO
IPC分类号： G02B5/08 , B32B15/04 , C03C17/36 , C23C14/08 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an Ag-based film having the good adhesion with a substrate and to provide a laminate having the Ag-based film. SOLUTION: An oxide film 2 of an Ag-based material is formed on the substrate 1 and the Ag-based film 3 comprising the Ag-based material is formed on the oxide film 2 to form the laminate 10 wherein the oxide film 2 of the Ag-based material is interposed between the substrate 1 and the Ag-based film 3. COPYRIGHT: (C)2003,JPO

3. 发明专利

JP2002129307A THIN FILM FORMING METHOD AND EQUIPMENT 失效
公开(公告)号：JP2002129307A
公开(公告)日：2002-05-09
申请号：JP2000325548
申请日：2000-10-25
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , KIYOTA JUNYA , SUGIURA ISAO , ARAI MAKOTO
IPC分类号： G02F1/1333 , C23C14/06 , C23C14/34 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming method and equipment wherein good adhesion is attained by a simplified structure at the boundary area between organic film and SiO2 film on a substrate, permitting deposition of SiO2 film at a high rate, thereby enabling formation of low resistance ITO film on SiO2 film. SOLUTION: This method utilizes one single cathode for both plasma processing of substrate surface on which organic film is formed and SiO2 film forming process by sputtering. The single cathode containing a crystal target and a magnetron discharge magnet placed apart from the crystal target at a distance that is adjustable is connected to high frequency power source. Plasma treatment of said surface is performed with conventional high frequency discharge by controlling strength of magnetic field by adjusting the distance between the target and magnet. Forming of SiO2 film by sputtering is also performed by high frequency magnetron discharge with the field strength adjusted to the level sufficient to regulate electron by the adjustment of the distance between the target and magnet.

4. 发明专利

JP2020117772A スパッタリング装置及び成膜方法审中-公开
公开(公告)号：JP2020117772A
公开(公告)日：2020-08-06
申请号：JP2019010246
申请日：2019-01-24
申请人： ULVAC CORP
发明人： KOBAYASI HIROSHI , ONO KOSUKE , GIBO MANABU , OKUBO HIROO , ARAI MAKOTO
IPC分类号： C23C14/34
摘要：【課題】波打つ膜厚分布や被処理基板端部における膜だれを効果的に抑制する際に、並設方向両端部のターゲットのターゲットライフを悪化させることなく、膜厚分布及び膜質分布の均一性良く成膜できるスパッタリング装置を提供する。【解決手段】真空チャンバ内に並設される複数枚のターゲット41で構成されるターゲットユニットと、ターゲットユニットと被処理基板Sとを並設方向に相対往復動させる駆動手段とを備え、被処理基板とターゲットユニットが往復動の中点に位置する状態で、被処理基板の並設方向両端が、並設方向両端に位置する第1のターゲット41a,41hに並設方向内側で隣接する第2のターゲット41b,41gと夫々対向するようにターゲットの枚数が設定され、駆動手段は、ターゲット幅Dwとターゲット間の距離Dsとの和であるターゲットピッチDpの0.5倍以上、1倍以下でストロークStが設定される。【選択図】図2

5. 发明专利

JP2019094548A スパッタ装置审中-公开
公开(公告)号：JP2019094548A
公开(公告)日：2019-06-20
申请号：JP2017226687
申请日：2017-11-27
申请人： ULVAC CORP
发明人： GIBO MANABU , ONO KOSUKE , OKUBO HIROO , KOBAYASI HIROSHI , ARAI MAKOTO
IPC分类号： C23C14/35 , C23C14/34
摘要：【課題】ターゲットのスパッタを開始したときにターゲットから放出されるスパッタ粒子が成膜対象に付着することを抑えることを可能としたスパッタ装置を提供する。【解決手段】スパッタ装置は、真空槽21と、真空槽21内における成膜対象領域A1に基板Sを配置する搬送部16と、ターゲットから成膜対象領域A1に向けてスパッタ粒子を放出するための第1状態と、ターゲットから成膜対象領域A1外に向けてスパッタ粒子を放出するための第2状態とを有するカソードユニット22と、成膜対象領域A1と対向する対向領域よりも広い走査領域でカソードユニット22を走査する走査部23と、カソードユニット22がスパッタ粒子の放出を開始して対向領域に入る走査において、カソードユニット22の状態を第2状態から第1状態に変える設定を行う制御部とを備える。【選択図】図2

6. 发明专利

JPH11352310A NICKEL-BASE BM FILM AND PRODUCTION OF BM FILM 失效
公开(公告)号：JPH11352310A
公开(公告)日：1999-12-24
申请号：JP15509198
申请日：1998-06-04
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , KIYOTA JUNYA , SUGIURA ISAO , ARAI MAKOTO , NAKAMURA HAJIME , HORI TAKAHIDE , HAYASHI SHIMEI , OTA YOSHIFUMI
IPC分类号： G02B5/00 , C23C14/06 , G02B5/20 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide a BM(black matrix) film which is little in particle generation with low environmental pollution. SOLUTION: The BM films 51, 71 of a laminated structure are formed of translucent layers 54, 74 consisting of nickel oxide thin films or nickel nitride thin films and metallic reflection layers 55, 75 consisting of nickel thin films by using targets which consist essentially of nickel, are added with other metals and are made nonmagnetic. The amt. of the gaseous oxygen to be introduced in a sputtering atmosphere and the amt. of the gaseous nitrogen to be introduced is adequately selected, by which the black BM films of low reflection may be obtd. The stresses are smaller than in the chromium-base BM films and, therefore, there is no particle generation and an environmental pollution problem does not arise even at the time of etching.

7. 发明专利

JPH11354469A THIN FILM FORMATION METHOD 失效
公开(公告)号：JPH11354469A
公开(公告)日：1999-12-24
申请号：JP16322798
申请日：1998-06-11
申请人： ULVAC CORP
发明人： ARAI MAKOTO , ISHIBASHI AKIRA , KIYOTA JUNYA , SUGIURA ISAO , HAYASHI SHIMEI , NAKAMURA HAJIME , HORI TAKAHIDE , OTA YOSHIFUMI
IPC分类号： H01L21/28 , H01L21/203 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of reducing hillocks to be a problem especially at the time of using an Al thin film as a wiring material, in the manufacturing method of an Al or Al alloy wiring film. SOLUTION: When contamination for which the oxidative gas of oxygen or water or the like remains inside a processor at the time of sputtering for forming the Al thin film is generated, an oxidized film is formed at the grain boundary of the Al film, the growth of grains is obstructed and the hillock is generated on the surface of the Al thin film in a heating process thereafter. In order to prevent that, in this case, before growing the Al thin films 5a and 5c on a substrate 5, high frequency power weak enough not to sputter a target 3 is supplied to the target 3, plasma is generated, the surface of the target 3 and the surface of the substrate 5 are cleaned and the oxidative gas is removed. Thus, the oxidized film is prevented from being formed at the grain boundary, the growth of the grains is not obstructed and the generation of many hillocks on the surface is prevented even when a heating processing is performed after forming the thin film.

8. 发明专利

JP2000124155A Al THIN-FILM FORMING METHOD 失效
公开(公告)号：JP2000124155A
公开(公告)日：2000-04-28
申请号：JP29124698
申请日：1998-10-14
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , KIYOTA JUNYA , ARAI MAKOTO , SUGIURA ISAO , NAKAMURA HAJIME , HORI TAKAHIDE , HAYASHI SHIMEI , OTA YOSHIFUMI
IPC分类号： H01L23/52 , C23C14/34 , H01L21/285 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a technique that is capable of reducing hillocks in an Al thin film. SOLUTION: A substrate 5 is introduced into a processing chamber 2, the processing chamber 2 is made into a state of evacuated atmosphere, then sputtering gas is introduced into the processing chamber 2 to sputter a target 3 that contains Al, and a reducing gas is introduced into the processing chamber 2, when Al thin films 5a and 5c are formed on the substrate 5. Since no oxide film is formed on the surfaces of Al crystal grains, the Al crystal grains get large in grain diameter and are improved in orientation, hillocks are produced less, even when heat treatment is carried out after the Al thin films 5a and 5c are formed. Hydrogen gas or methane gas can be used as reducing gas.

9. 发明专利

JP2000121824A ZINC/INDIUM-BASE BM FILM AND PRODUCTION OF BM FILM 失效
公开(公告)号：JP2000121824A
公开(公告)日：2000-04-28
申请号：JP29124798
申请日：1998-10-14
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , KIYOTA JUNYA , SUGIURA ISAO , ARAI MAKOTO , NAKAMURA HAJIME , HORI TAKAHIDE , HAYASHI SHIMEI , OTA YOSHIFUMI
IPC分类号： G02B5/20 , C23C14/06 , C23C14/14 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide BM films which lessen particle generation with low environmental pollution. SOLUTION: The BM films 51 and 71 of a laminated structure are formed of light transmissive layers 54 and 74 consisting of oxide thin films or nitride thin films and metallic reflection layers 55 and 75 consisting essentially of indium or zinc by using a target consisting essentially of the indium or the zinc. The black BM films of low reflection may be obtained by adequately selecting the amount of the gaseous oxygen to be added or the amount of the gaseous nitrogen to be added into a sputtering atmosphere. Since stresses are smaller than the chromium-base BM films, the particle generation does not occur and the problem of the environment pollution does not occur even at the time of etching.

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