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1. 发明专利

JP2013021808A Bus bar and electric power conversion system having the same 有权
标题翻译： BUS BAR和电力转换系统
公开(公告)号：JP2013021808A
公开(公告)日：2013-01-31
申请号：JP2011152803
申请日：2011-07-11
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー
发明人： YAMADA YASUSHI , USUI MASANORI , KOJIMA TAKASHI , IMAI MAKOTO , ISHINO HIROSHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To take proper measures against heat transmitted from a switching element to an external circuit element through a bus bar.SOLUTION: The bus bars 14P, 14N have a high-voltage bus bar 14P and a low-voltage bus bar 14N, respectively. At least either one of the high-voltage bus bar 14P and the low-voltage bus bar 14N includes reciprocating structure sections 34P, 34N reciprocating through an outside portion and an inside portion. The outside portion and the inside portion of the reciprocating structure sections 34P, 34N face each other at a predetermined interval.
摘要翻译：要解决的问题：对通过母线从开关元件传递到外部电路元件的热量采取适当的措施。汇流条14P，14N分别具有高压汇流条14P和低压母线14N。高压母线14P和低压母线14N中的至少任一个包括通过外部部分和内部部分往复运动的往复式结构部分34P，34N。往复结构部34P，34N的外侧部分和内侧部分以预定的间隔相互面对。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012227358A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2012227358A
公开(公告)日：2012-11-15
申请号：JP2011093721
申请日：2011-04-20
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , Denso Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , USUI MASANORI , IMAI MAKOTO , HARADA NAOICHI , KAWAHARA HIDEKI
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L24/32 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module which eases stress applied to an area between members, located in a heat transmission path of heat generated in a semiconductor element, when the members are exposed to heat change.SOLUTION: A semiconductor module 1 includes: an insulation substrate 20; a cooler 10; and a contact member 34. The contact member 34 is provided between the insulation substrate 20 and the cooler 10 so as to make a point contact or a line contact with at least one of the insulation substrate 20 and the cooler 10.
摘要翻译：要解决的问题：提供一种半导体模块，其在构件暴露于热变化时，使施加到位于半导体元件中产生的热的传热路径的构件之间的区域施加应力。解决方案：半导体模块1包括：绝缘基板20; 冷却器10; 和接触构件34.接触构件34设置在绝缘基板20和冷却器10之间，以便与绝缘基板20和冷却器10中的至少一个进行点接触或线接触。（C）2013，JPO＆INPIT

3. 发明专利

JP2011125152A Power converter 有权
标题翻译：电源转换器
公开(公告)号：JP2011125152A
公开(公告)日：2011-06-23
申请号：JP2009281312
申请日：2009-12-11
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , OSADA YUJI , YAMANAKA GENTARO , FURUTA NORIBUMI , UENO TAKASHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To reduce the size and weight of a power module. SOLUTION: A first input arm 30b, a first transistor T3, an output arm 30f, a second transistor T4, and a second input arm 30a are electrically connected in this order. At least one of the first input arm 30b, the second input arm 30a, and the output arm 30f is provided with a fin 40. The heat generated in the transistors T3 and T4 can be transmitted via the arms 30a, 30b and 30f and radiated via a fin 40. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减小电源模块的尺寸和重量。解决方案：第一输入臂30b，第一晶体管T3，输出臂30f，第二晶体管T4和第二输入臂30a按此顺序电连接。第一输入臂30b，第二输入臂30a和输出臂30f中的至少一个设置有翅片40.晶体管T3和T4中产生的热量可以经由臂30a，30b和30f传播并辐射（C）2011，JPO＆INPIT

4. 发明专利

JP2010179336A Joint product, semiconductor module, and method for manufacturing the joint product 审中-公开
标题翻译：接头产品，半导体模块和制造接头产品的方法
公开(公告)号：JP2010179336A
公开(公告)日：2010-08-19
申请号：JP2009024874
申请日：2009-02-05
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , OSADA YUJI , YAGI YUJI , YOSHIDA TADASHI
IPC分类号： B23K35/26 , B23K35/28 , B23K35/30 , C22C5/02 , C22C9/02 , C22C13/00 , C22C13/02 , C22C18/04 , H01L21/52 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： B23K35/007 , B22F7/006 , B22F7/08 , B23K35/262 , B23K35/28 , B23K35/30 , B32B15/01 , C22C9/02 , C22C13/00 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/83801 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1517 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H01L2924/05432 , H01L2924/00 , H01L2924/01014 , H01L2924/01083 , H01L2924/3512 , H01L2924/00015 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a joint product in which any trouble such as crack and peeling is hardly caused to the cryogenic cycle, and reliability is high, and a semiconductor module and a method for manufacturing the joint product.
SOLUTION: The joint product has a first member 101 and a second member 102 having a joined face S mainly composed of copper. A solder member 200 containing a three-dimensional mesh structure 201 mainly composed of copper in a tin-based solder material 202 is provided between the first member 101 and the second member 102. A copper-tin alloy 203 having the mean thickness of ≥2 μm and ≤20 μm is provided between the joined face and the three-dimensional mesh structure 201. When the joint product is a semiconductor module, the first member 101 and the second member 102 are a semiconductor element and an insulating substrate, or an insulating substrate and a heat radiation plate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低温循环难以引起诸如裂纹和剥离等任何问题，可靠性高的接头产品，以及用于制造接头产品的半导体模块和方法。解决方案：接头产品具有第一构件101和具有主要由铜构成的接合面S的第二构件102。在第一构件101和第二构件102之间，设置包含锡基焊料202中主要由铜构成的三维网状结构201的焊料构件200.平均厚度≥2的铜锡合金203 在接合面和三维网格结构201之间设置有μm和≤20μm。当接合产品是半导体模块时，第一部件101和第二部件102是半导体元件和绝缘基板，或绝缘基板基板和散热板。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010147205A Laminated electrode forming method and semiconductor device equipped with laminated electrode 有权
标题翻译：层压电极成型方法和装有层压电极的半导体器件
公开(公告)号：JP2010147205A
公开(公告)日：2010-07-01
申请号：JP2008321887
申请日：2008-12-18
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： KIKUTA DAIGO , YAMADA YASUSHI , UESUGI TSUTOMU , SUGIMOTO MASAHIRO
IPC分类号： H01L23/36 , H01L21/28
CPC分类号： H01L24/05 , H01L24/32 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a laminated electrode with an improved adhesive property with a semiconductor layer at least on one surface of a group III nitride based semiconductor layer. SOLUTION: This laminated electrode forming method comprises: a first process, a second process and a third process. In the first process, a first metal film 38 composed of Mg or Cr is formed on the backside 82 of a semiconductor layer 80. In the second process, a second metal film 36 composed of Al is formed on the first metal film 38. In the third process, a third metal film 34 composed of Cu is formed on the second metal film 36. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供在III族氮化物基半导体层的至少一个表面上具有改善的与半导体层的粘合性的层压电极。解决方案：该层叠电极形成方法包括：第一工序，第二工序和第三工序。在第一工序中，在半导体层80的背面82上形成由Mg或Cr构成的第一金属膜38.在第二工序中，在第一金属膜38上形成由Al构成的第二金属膜36。第三工序中，在第二金属膜36上形成由Cu构成的第三金属膜34.（C）2010，JPO＆INPIT

6. 发明专利

JP2010131618A METHOD OF MANUFACTURING Bi-CONTAINING SOLDER FOIL, Bi-CONTAINING SOLDER FOIL, JOINED BODY AND POWER SEMICONDUCTOR MODULE 有权
标题翻译：双包装机，双包装机，接合体和功率半导体模块的制造方法
公开(公告)号：JP2010131618A
公开(公告)日：2010-06-17
申请号：JP2008308653
申请日：2008-12-03
申请人： Tohoku Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 国立大学法人東北大学 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , ISHIDA KIYOHITO , ONUMA IKUO , TAKAKU YOSHIKAZU , NAKAGAWA IKURO , ATSUMI TAKASHI
IPC分类号： B23K35/40 , B22F1/00 , B22F3/18 , B23K35/14 , B23K35/26 , C22C9/05 , C22C12/00 , H01L23/36 , H01L23/373 , H01L25/07 , H01L25/18 , H05K3/34
CPC分类号： H01L24/27 , H01L24/29 , H01L2224/83101 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing Bi-containing solder foil and Bi-containing solder foil, and to provide a joined body that is highly heat resistant and accurately welded and a power semiconductor module. SOLUTION: In the method of manufacturing Bi-containing solder foil, powder of a solder material containing bismuth (Bi) is formed into a sheet by a powder rolling method. The ratio of a long side and a short side in the powder of the solder material is suitably ≥1.2 and ≤3.0 while the mean particle diameter of the powder is suitably ≥5 μm and ≤200 μm. The rolling by the powder rolling method is desirably performed at ≥-20°C and ≤269°C. Also, in the joined body and the power semiconductor module, the Bi-containing solder foil is used in the weld zone. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造含Bi焊料箔和Bi含有焊料箔的方法，并提供高耐热和精确焊接的接合体和功率半导体模块。解决方案：在制造含Bi焊料箔的方法中，通过粉末轧制法将含有铋（Bi）的焊料的粉末形成为片材。焊料的粉末中的长边和短边的比率适当地≥1.2和≤3.0，而粉末的平均粒径适当地≥5μm和≤200μm。通过粉末轧制法的轧制优选在≥-20℃和≤269℃下进行。此外，在接合体和功率半导体模块中，在焊接区域中使用含Bi焊料箔。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009129983A Junction structure and method of manufacturing the same, and power semiconductor module and method of manufacturing the same 审中-公开
标题翻译：结构及其制造方法和功率半导体模块及其制造方法
公开(公告)号：JP2009129983A
公开(公告)日：2009-06-11
申请号：JP2007300793
申请日：2007-11-20
申请人： Tohoku Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 国立大学法人東北大学 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , YAGI YUJI , TAKAKU YOSHIKAZU , ONUMA IKUO , ISHIDA KIYOHITO , ATSUMI TAKASHI , NAKAGAWA IKURO , SHIRAI MIKIO
IPC分类号： H01L21/52 , H01L23/34
CPC分类号： H01L24/83 , H01L2224/83101 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a junction structure with a member junctioned uniformly owing to improved wetting properties when a solder material mainly comprising zinc is used, and to provide a power semiconductor module and method of manufacturing the same. SOLUTION: The junction structure 300 has a first member 101 and a second member 102. The part between the first member 101 and the second member 102 is junctioned by the solder material 50 mainly comprising zinc. Each surface to be junctioned of the first member 101 and the second member 102 includes nickel layers 111, 112. Further the surfaces of the nickel layers 111, 112 comprise metal surface layers 121, 122 having high reaction properties with zinc and generating the alloy with zinc. The metal surface layers 121, 122 are eliminated at the junction surface after the junction. The first member 101 and the second member 102 correspond to the power semiconductor device and an insulating substrate, or the insulating substrate and a heat sink. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种连接结构，其中当使用主要包含锌的焊料材料时，由于改善的润湿性能均匀地连接部件，并提供功率半导体模块及其制造方法。结合结构300具有第一构件101和第二构件102.第一构件101和第二构件102之间的部分由主要包含锌的焊料材料50连接。要与第一构件101和第二构件102接合的每个表面包括镍层111,112。此外，镍层111,112的表面包括与锌具有高反应性能的金属表面层121,122，并且与锌。金属表面层121,122在结之后的接合表面处被去除。第一构件101和第二构件102对应于功率半导体器件和绝缘基板，或者绝缘基板和散热器。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2010251711A Power module 有权
标题翻译：电源模块
公开(公告)号：JP2010251711A
公开(公告)日：2010-11-04
申请号：JP2010027509
申请日：2010-02-10
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , OSADA YUJI , YAMANAKA GENTARO , FURUTA NORIBUMI , KITAMI AKIO , YOSHIDA TADASHI , KUNO HIROMICHI
IPC分类号： H01L23/36 , H01L23/38
CPC分类号： H01L23/38 , H01L23/427 , H01L23/62 , H01L23/642 , H01L24/29 , H01L24/32 , H01L25/074 , H01L25/16 , H01L2224/73253 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107
摘要： PROBLEM TO BE SOLVED: To solve the problem that power devices arranged by stacking in the vertical direction thermally interfere with each other to thermally damage.
SOLUTION: A power module includes a pair of power devices 12 and 14 that are stacked with a plate-shaped output electrode 10 arranged therebetween, and an N-electrode 16 and a P-electrode 18 that are stacked with the pair of power devices 12 and 14 arranged therebetween. The output electrode 10 is anisotropic such that the thermal conductivity in a direction orthogonal to the stacking direction is greater than the thermal conductivity in the stacking direction. Also, the output electrode 10 extends in the orthogonal direction from a stacked area of the pair of power devices 12 and 14. The N-electrode 16 and the P-electrode 18 extend in the orthogonal direction while maintaining a facing positional relationship.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了解决在垂直方向上堆叠布置的功率器件彼此热干扰以热损伤的问题。解决方案：功率模块包括一对功率器件12和14，它们与布置在其间的板状输出电极10堆叠，并且N电极16和P电极18与所述一对设置在其间的功率器件12和14。输出电极10是各向异性的，使得与层叠方向正交的方向的导热率大于层叠方向的导热率。此外，输出电极10从一对功率器件12和14的堆叠区域沿正交方向延伸.N电极16和P电极18在正交方向上延伸，同时保持面对的位置关系。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011125151A Power converter 有权
标题翻译：电源转换器
公开(公告)号：JP2011125151A
公开(公告)日：2011-06-23
申请号：JP2009281311
申请日：2009-12-11
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMADA YASUSHI , OSADA YUJI , YAMANAKA GENTARO , FURUTA NORIBUMI , UENO TAKASHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To reduce the size and weight of a power module. SOLUTION: An n-type input arm 30c, a transistor T6, a V-phase output arm 30g, a transistor T5, a p-type input arm 30b, a transistor T3, a U-phase output arm 30f, a transistor T4, an n-type input arm 30a are stacked in the stacking direction in this order. The transistors T5 and T6 and the transistors T3 and T4 face opposite sides. Hereby, the U-phase unit 15U and the V-phase unit 15V can share the input arm 30b as a p-type input arm, thereby reducing the size and weight of the power module. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减小电源模块的尺寸和重量。解决方案：n型输入臂30c，晶体管T6，V相输出臂30g，晶体管T5，p型输入臂30b，晶体管T3，U相输出臂30f，晶体管T4，n型输入臂30a依次层叠在堆叠方向。晶体管T5和T6以及晶体管T3和T4面对相对的两侧。因此，U相单元15U和V相单元15V可以将输入臂30b共享为p型输入臂，从而减小功率模块的尺寸和重量。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010103311A Multilayer substrate 审中-公开
标题翻译：多层基板
公开(公告)号：JP2010103311A
公开(公告)日：2010-05-06
申请号：JP2008273419
申请日：2008-10-23
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAGI YUJI , WADA KENSUKE , YAMADA YASUSHI , ATSUMI TAKASHI , NAKAGAWA IKURO
IPC分类号： H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide technique such that a multilayer substrate having aluminum nitride and copper laminated has no crack in an insulating layer no matter how many times thermal loads of heating and cooling are placed repeatedly. SOLUTION: The multilayer substrate 2 has the insulating layer 6 of aluminum nitride and a conductive layer 4 of copper formed on the insulating layer 6. The conductive layer 4 has a thick portion 4a and a thin portion 4b. Part of the thick portion 4a forms a bonding region for bonding a semiconductor device. The thin portion 4b is provided outside the bonding region and formed thinner than the bonding region. The thin portion 4b is formed to a thickness of ≤0.05 mm within a range of at least 1.2 mm from an outer periphery of the conductive layer 4. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种技术，使得具有氮化铝和铜层压的多层基板在绝缘层中没有裂纹，而不管多少次加热和冷却的热负载重复放置。解决方案：多层基板2具有氮化铝的绝缘层6和形成在绝缘层6上的铜的导电层4.导电层4具有厚的部分4a和薄的部分4b。厚部分4a的一部分形成用于接合半导体器件的接合区域。薄部4b设置在接合区域的外侧，并且形成为比接合区域薄。在距离导电层4的外周至少1.2mm的范围内，薄部4b形成为≤0.05mm的厚度。（C）2010，JPO＆INPIT

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