专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010030854A Carbon onion particle dispersed film and its manufacturing method 审中-公开
标题翻译：碳酸钠颗粒分散膜及其制造方法
公开(公告)号：JP2010030854A
公开(公告)日：2010-02-12
申请号：JP2008196000
申请日：2008-07-30
申请人： Japan Atomic Energy Agency , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人日本原子力研究開発機構
发明人： KAMIYA NOBUO , AZUMA HIROZUMI , ITO TADASHI , OMICHI HIROYUKI , NISHIMURA AKIHIKO , KOSAKA AKIHITO
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a carbon onion particle dispersed film which is composed of a single layer containing a carbon onion particle, and to provide a manufacturing method of a carbon onion particle dispersed film which can manufacture the same at a low cost.
SOLUTION: The carbon onion particle dispersed film is composed of a mixed layer which contains carbon onion particles, metal particles and an amorphous phase. The manufacturing method of a carbon onion particle dispersed film is provided with an irradiating step for irradiating a pulse laser on the surface of a substrate containing a metal carbide at least on the surface, wherein the pulse laser has an irradiation strength of not less than 5×10
13 W/cm
2 and not more than 10
17 W/cm
2 .
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种由含有洋葱颗粒的单层构成的洋葱颗粒分散膜，并提供可以在低温下制造的洋葱颗粒分散膜的制造方法成本。解决方案：洋葱颗粒分散膜由含有洋葱颗粒，金属颗粒和非晶相的混合层组成。提供了一种将洋葱粒子分散膜的制造方法，至少在表面上对包含金属碳化物的基板的表面照射脉冲激光的照射工序，其中，脉冲激光的照射强度为5以上 ×10 13 W / cm 2 和不大于10 17 W / cm SP SP 2。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009272544A Etchant, and method of manufacturing semiconductor element 有权
标题翻译：蚀刻和制造半导体元件的方法
公开(公告)号：JP2009272544A
公开(公告)日：2009-11-19
申请号：JP2008123539
申请日：2008-05-09
申请人： Institute Of National Colleges Of Technology Japan , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人国立高等専門学校機構
发明人： ITO TADASHI , FUKANO TATSUO , MOTOHIRO TOMOMI , KATAGIRI HIRONORI
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/541
摘要： PROBLEM TO BE SOLVED: To provide: an etchant which is usable to etch a semiconductor element which has an oxide layer and a sulfide layer of base metals on an upper-surface side and a metal layer containing high-fusion-point metal on a substrate side, and etches layers together without losing the metal layer; and a method of manufacturing the semiconductor element using the etchant. SOLUTION: The etchant is usable to etch the semiconductor element which has the oxide layer and sulfide layer of base metals on the upper-surface side and the metal layer containing the high-fusion-point metal on the substrate side, and contains second acid having higher oxidation power than phosphorus acid and a peel inhibitor for inhibiting an organic coating from peeling, the rest being a diluent. The method of manufacturing the semiconductor element includes an etching process of etching the semiconductor element which has the oxide layer and sulfide layer of base metals on the upper-surface side and the metal layer containing the high-fusion-point metal on the substrate side by using such the etchant. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：可用于蚀刻在上表面侧具有氧化物层和贱金属的硫化物层的半导体元件和含有高熔点金属的金属层的蚀刻剂在基板一侧上蚀刻层而不损失金属层; 以及使用蚀刻剂制造半导体元件的方法。解决方案：蚀刻剂可用于蚀刻具有上表面侧的氧化物层和贱金属的硫化物层和在基板侧上含有高熔点金属的金属层的半导体元件，并且包含具有比磷酸更高的氧化力的第二种酸和用于抑制有机涂层剥离的剥离抑制剂，其余为稀释剂。半导体元件的制造方法包括：蚀刻具有上表面侧的氧化物层和贱金属的硫化物层的半导体元件和在基板侧含有高熔点金属的金属层的蚀刻工序，使用这种蚀刻剂。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009059915A Photovoltaic device 有权
标题翻译：光电器件
公开(公告)号：JP2009059915A
公开(公告)日：2009-03-19
申请号：JP2007226277
申请日：2007-08-31
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： TAKEDA YASUHIKO , ITO TADASHI , MOTOHIRO TOMOMI , NAGASHIMA TOMOMICHI
IPC分类号： H01L31/04
CPC分类号： H01L31/035272 , H01L31/0352 , H01L31/06
摘要： PROBLEM TO BE SOLVED: To provide a hot-carrier photovoltaic device adapted to effectively increase conversion efficiency even if residence time of carriers in a light-absorbing layer is short. SOLUTION: The photovoltaic device includes: a light-absorbing layer 2 for absorbing light and generate electrons and positive holes; an electron transfer layer 3 adjoining one side of the light-absorbing layer 2; a hole transfer layer 4 adjoining the other side of the light-absorbing layer 2; a negative electrode 5 provided on the electron transfer layer 3; and a positive electrode 6 provided on the hole transfer layer 4. The electron transfer layer 3 has a conduction band 3a which has an energy band width narrower than that of the conduction band 2c of the light-absorbing layer 2 and passes electrons at a given energy level E e selectively. The hole transfer layer 4 has a valence electron band 4a which has an energy band width narrower than that of the valence electron band 2d of the light-absorbing layer 2 and passes positive holes at a given energy level E h selectively. The light-absorbing layer 2 contains p-type impurities or n-type impurities. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种即使在载体在光吸收层中的停留时间短的情况下也适用于有效地提高转换效率的热载体光电装置。解决方案：光伏器件包括：用于吸收光并产生电子和正空穴的光吸收层2; 邻接光吸收层2的一侧的电子转移层3; 邻接光吸收层2的另一侧的空穴转移层4; 设置在电子转移层3上的负极5; 以及设置在空穴转移层4上的正电极6.电子转移层3具有导带3a，该导带具有比光吸收层2的导带2c的能带宽窄的能带宽，并且在给定的能级E e 。空穴转移层4具有价电子带4a，其能带宽比光吸收层2的价电子带2d的能带宽窄，并以给定能级E h 有选择地。光吸收层2含有p型杂质或n型杂质。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2010239233A Antenna devices 有权
标题翻译：天线设备
公开(公告)号：JP2010239233A
公开(公告)日：2010-10-21
申请号：JP2009082558
申请日：2009-03-30
申请人： Toyoda Gosei Co Ltd , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： ITO TADASHI , OKAMOTO ATSUHITO , MOTOHIRO TOMOMI , NOMURA TAKESHI , HANAZAWA MASAHIRO , ITO TOSHIYASU , MIYAZAKI TAKESHI , UENO YUKIHISA
IPC分类号： H01Q23/00
CPC分类号： H01Q23/00 , H01Q1/2283 , H01Q1/38 , H01Q9/30
摘要： PROBLEM TO BE SOLVED: To provide a voltage type antenna device, using a simple structure.
SOLUTION: An antenna element 20 of an antenna device 10 is constituted of a conductive antenna unit 30, a tunnel diode 40, a connecting electrode 52 to be used, while connecting to a load 60, and a fixed electrode 54 to be used, while connecting to a fixed potential. The antenna unit 30 includes a first portion 32, connected to the tunnel diode 40 and a second portion 34 connected to the fixed electrode 54. One electrode of the tunnel diode 40 is connected to the first portion 32 of the antenna unit 30, and the other electrode thereof is connected to the connecting electrode 52.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用简单结构的电压型天线装置。解决方案：天线装置10的天线元件20由连接到负载60的导电天线单元30，隧道二极管40，要使用的连接电极52和固定电极54构成在连接到固定电位时使用。天线单元30包括连接到隧道二极管40的第一部分32和连接到固定电极54的第二部分34.隧道二极管40的一个电极连接到天线单元30的第一部分32，并且其他电极连接到连接电极52.版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008130898A Quantum dot array and manufacturing method thereof 审中-公开
标题翻译：量子阵列及其制造方法
公开(公告)号：JP2008130898A
公开(公告)日：2008-06-05
申请号：JP2006315562
申请日：2006-11-22
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： NAGASHIMA TOMOMICHI , TAKEDA YASUHIKO , ITO TADASHI , MOTOHIRO TOMOMI
IPC分类号： H01L29/06 , C23C14/24 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To obtain a quantum dot array in which quantum dots in a relatively small size are uniformly distributed without being short-circuited with each other. SOLUTION: A manufacturing method of a quantum dot array includes the steps of: providing a plurality of pole-shaped parts (4) each including a quantum dot (6) vertically held between barrier layers (8a, 8) on a substrate (2), forming a base part for forming the plurality of pole-shaped parts (4) on the substrate (2) by vapor-depositing a first material obliquely while rotating the substrate (2) in order to form a quantum dot array (100); and then vapor-depositing the materials of the barrier layers and the materials of the quantum dots sequentially obliquely while stopping rotating the substrate, thereby forming the quantum dots vertically held between the barrier layers on the base part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得量子点阵列，其中相对小尺寸的量子点彼此均匀地分布而不相互短路。解决方案：量子点阵列的制造方法包括以下步骤：提供多个极性部分（4），每个极性部分包括垂直保持在衬底上的阻挡层（8a，8）之间的量子点（6）（2），通过在旋转基板（2）的同时使第一材料倾斜地气相沉积，形成用于在基板（2）上形成多个极形部分（4）的基部，以形成量子点阵列 100）; 然后在停止旋转衬底的同时顺序地倾斜地气相沉积阻挡层的材料和量子点的材料，从而形成垂直保持在基底上的阻挡层之间的量子点。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2010171408A Resonant tunnel diode 有权
标题翻译：谐振隧道二极管
公开(公告)号：JP2010171408A
公开(公告)日：2010-08-05
申请号：JP2009290896
申请日：2009-12-22
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： IKUNO TAKASHI , ITO TADASHI , TAKEDA YASUHIKO
IPC分类号： H01L29/88
摘要： PROBLEM TO BE SOLVED: To provide a new resonant tunnel diode having conventionally unknown characteristics. SOLUTION: This resonant tunnel diode includes: a silicon material structure in which a first SiO 2 layer having a thickness of 2-6 nm, an intermediate layer having a thickness of 1-10 nm and having Si micro-crystals with a crystal orientation aligned to a predetermined orientation and embedded like a dot into the SiO 2 thin film and a second SiO 2 layer having a thickness of 2-6 nm are laminated on a degenerating semiconductor substrate in this order; and a pair of electrodes pasted on both sides of the silicon material structure. According to this resonant tunnel diode, peculiar characteristics configured such that negative resistance is observed even at a normal temperature, that means the function as a resonant tunnel diode even at a normal temperature can be obtained. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有传统上未知特性的新型谐振隧道二极管。解决方案：该谐振隧道二极管包括：硅材料结构，其中具有2-6nm厚度的第一SiO 2 SB层，中间层的厚度为1-10nm;以及具有晶体取向与预定取向成对并且像点一样嵌入到SiO 2 薄膜中的Si微晶体和厚度为2μm的第二SiO 2 层 -6nm层叠在退化半导体衬底上; 以及粘贴在硅材料结构两侧的一对电极。根据该谐振隧道二极管，即使在正常温度下也观察到负电阻即可构成即使在常温下也作为谐振隧道二极管的功能的特殊特性。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009135316A Photoelectric element and manufacturing method thereof 有权
标题翻译：光电元件及其制造方法
公开(公告)号：JP2009135316A
公开(公告)日：2009-06-18
申请号：JP2007311096
申请日：2007-11-30
申请人： Institute Of National Colleges Of Technology Japan , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人国立高等専門学校機構
发明人： FUKANO TATSUO , ITO TADASHI , MOTOHIRO TOMOMI , KATAGIRI HIRONORI
IPC分类号： H01L31/04
CPC分类号： H01L31/0326 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To increase the conversion efficiency of a photoelectric element which uses a CZTS-based compound as a light absorption layer.
SOLUTION: A method of manufacturing the photoelectric element includes a bottom electrode formation step of forming a bottom electrode on the surface of a substrate containing Na; a light absorption layer formation step of forming the light absorption layer consisting of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S on the bottom electrode; and a washing step of washing the light absorption layer using a solvent by which Na-O-based particles can be dissolved. Also provided is the photoelectric element which can be obtained by this method.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提高使用基于CZTS的化合物作为光吸收层的光电元件的转换效率。解决方案：制造光电元件的方法包括在包含Na的衬底的表面上形成底电极的底电极形成步骤; 在底部电极上形成由含有Cu，Zn，Sn和S的硫化物系化合物半导体构成的光吸收层的光吸收层形成工序; 以及使用可溶解Na-O系颗粒的溶剂洗涤光吸收层的洗涤步骤。还提供了可以通过该方法获得的光电元件。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2012151346A Method for manufacturing mim tunnel diode 有权
标题翻译：制造MIM隧道二极管的方法
公开(公告)号：JP2012151346A
公开(公告)日：2012-08-09
申请号：JP2011009850
申请日：2011-01-20
申请人： Toyoda Gosei Co Ltd , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： ITO TADASHI , YAMADA NOBORU , UENO YUKIHISA
IPC分类号： H01L29/88 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an MIM tunnel diode in which an extremely thin and uniform insulation layer can be formed on a first metal layer easily by plasma oxidation.SOLUTION: A method for manufacturing an MIM tunnel diode in which a first metal layer 14 composed of nickel, an insulation layer 16 composed of nickel oxide having a thickness of 1 to 10 nm, and a second metal layer 18 are laminated in this order on an insulating substrate 12 includes an insulation layer forming step for forming an insulation layer by oxidizing the first metal layer by plasma oxidation method. When the first metal layer is oxidized by plasma oxidation method in the insulation layer forming step, a parallel-plate plasma generating device is used, and the oxygen pressure p(Pa), the self-bias voltage V(V) and the processing time t(min) of the parallel-plate plasma generating device are set to satisfy the following conditions; 6.8≤p≤12.0, 290≤V≤400, 3≤t≤6.
摘要翻译：要解决的问题：提供一种MIM隧道二极管的制造方法，其中可以通过等离子体氧化容易地在第一金属层上形成极薄且均匀的绝缘层。解决方案：一种制造MIM隧道二极管的方法，其中将由镍组成的第一金属层14，由氧化镍构成的绝缘层16和第二金属层18层压在绝缘基板12上的顺序包括通过用等离子体氧化法氧化第一金属层来形成绝缘层的绝缘层形成步骤。当在绝缘层形成工序中第一金属层被等离子体氧化法氧化时，使用平行平板等离子体生成装置，氧压p（Pa），自偏压V DC ≤400,3≤t≤6。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011091339A Photoelectric conversion element 审中-公开
标题翻译：光电转换元件
公开(公告)号：JP2011091339A
公开(公告)日：2011-05-06
申请号：JP2009245782
申请日：2009-10-26
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： TAKEDA YASUHIKO , IKUNO TAKASHI , ITO TADASHI , SUZUKI RYO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having a large effect for suppressing dissipation of the energy of an excited carrier to a phonon and also having sufficiently large carrier mobility. SOLUTION: The photoelectric conversion element includes the following constitution: (a) the photoelectric conversion element includes a light absorption layer having a quantum dot array structure, a first energy selective contact and an electron extraction electrode which are formed on an electron extraction end side of the light absorption layer, and a hole extraction electrode formed on a hole extraction end side of the light absorption layer; (b) an effective mass m e of a quantum dot material is equal to or less than 0.1; (c) an effective mass ratio m e /m h of an electron to a hole of the quantum dot material is equal to or less than 0.3; (d) ε g (bulk)+ε e1 +ε h1 of the quantum dot material is in the range of 0.5≤ε g (bulk)+ε e1 +ε h1 ≤1.5 eV; (e) a barrier potential V e of an electron is in the range of 1.0+ε e1 ≤V e ≤5.0 eV; (f) a barrier potential V h of a hole is in the range of -0.1≤V h ≤0.5 eV; and (g) the thickness d of a barrier layer is in the range of 1≤d≤5 nm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种光电转换元件，其具有大的效果，用于抑制激发的载流子对声子的能量的耗散，并且还具有足够大的载流子迁移率。光电转换元件包括以下结构：（a）光电转换元件包括在电子提取物上形成的具有量子点阵列结构的光吸收层，第一能量选择接触和电子提取电极以及形成在光吸收层的空穴提取端侧的空穴引出电极，（b）量子点材料的有效质量 e 等于或小于0.1; （c）量子点材料的空穴的电子的有效质量比m / h 等于或小于0.3; 量子点材料的（d）量子点材料的ε（SB）+ε h1 在0.5≤ε e1 +ε h1 ≤1.5eV; （e）电子的势垒电位V e 在1.0 +ε≤1.0的范围内，≤5.0eV; （f）孔的势垒电位V h 在-0.1≤V≤HS≤0.5eV的范围内; 和（g）阻挡层的厚度d在1≤d≤5nm的范围内。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009026891A Photoelectric element and sulfide system compound semiconductor 有权
标题翻译：光电元件和硫化物系统化合物半导体
公开(公告)号：JP2009026891A
公开(公告)日：2009-02-05
申请号：JP2007187379
申请日：2007-07-18
申请人： Institute Of National Colleges Of Technology Japan , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人国立高等専門学校機構
发明人： FUKANO TATSUO , ITO TADASHI , MOTOHIRO TOMOMI , KATAGIRI HIRONORI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a sulfide system compound semiconductor, having less fluctuations for conversion efficiency, and to provide a photoelectric element that uses the same compound semiconductor as a light-absorbing layer. SOLUTION: The photoelectric element includes a sulfide system compound semiconductor that contains Cu, Zn, Sn, and S and that does not contain a substance having Na and O and that uses this sulfide system compound semiconductor as a light-absorbing layer. In the photoelectric element that has the light-absorbing layer formed of the sulfide system compound semiconductor containing Cu, Zn, Sn, and S, members other than the light-absorbing layer forming the photoelectric element is formed of a material that does not contain Na. In the photoelectric element that is constituted of the light-absorbing layer formed of the sulfide system compound semiconductor that contains Cu, Zn, Sn, and S, at least one member, other than the light-absorbing layer forming the photoelectric element is formed of the material that contains Na and a diffusion-blocking layer for blocking the diffusion of Na to the light-absorbing layer from the material that contains Na is additionally provided. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有较小的转换效率波动的硫化物系化合物半导体，并提供使用与光吸收层相同的化合物半导体的光电元件。光电元件包括含有Cu，Zn，Sn和S的硫化物系化合物半导体，其不含有Na和O的物质，并且使用该硫化物系化合物半导体作为光吸收层。在具有由含有Cu，Zn，Sn和S的硫化物系化合物半导体形成的光吸收层的光电元件中，形成光电元件的光吸收层以外的部件由不含Na的材料形成。在由包含Cu，Zn，Sn和S的硫化物系化合物半导体形成的光吸收层构成的光电元件中，除形成光电元件的光吸收层以外的至少一个构件由另外提供含有Na和用于阻挡Na向含有Na的材料向Na吸光层扩散的扩散阻挡层的材料。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式