专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014005186A Semiconductor single crystal take-out device and method for manufacturing semiconductor single crystal 有权
标题翻译：半导体单晶引出器件及制造半导体单晶的方法
公开(公告)号：JP2014005186A
公开(公告)日：2014-01-16
申请号：JP2012143798
申请日：2012-06-27
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , NAGAI SEIJI , MORIYAMA MIKI
IPC分类号： C30B29/38 , C30B19/12 , C30B35/00 , H01L21/208
CPC分类号： C30B9/12 , C30B9/02 , C30B9/04 , C30B29/403 , C30B33/00 , C30B35/002 , Y10T117/1004 , Y10T117/1092
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor single crystal take-out device capable of preferably taking a semiconductor single crystal out from a crucible by melting a solidified flux quickly, and to provide a method for manufacturing a semiconductor single crystal.SOLUTION: A semiconductor single crystal take-out device 100 includes: a placing base 130 for placing a crucible 1 thereon while an opening of the crucible 1 is directed downward; a heater H1 for heating the crucible 1 placed on the crucible base 130; a single crystal receiving net 140 for receiving a semiconductor single crystal C10 falling from the opening of the crucible 1; and a determination part 190 for detecting take-out of the semiconductor single crystal C10 based on a variation of weight, which is caused by falling of the semiconductor single crystal C10.
摘要翻译：要解决的问题：提供一种半导体单晶取出装置，其能够优选通过快速熔化固化助熔剂从坩埚中取出半导体单晶，并提供半导体单晶的制造方法。解决方案：半导体单晶取出装置100包括：坩埚1的开口向下方放置坩埚1的放置基座130; 用于加热置于坩埚基座130上的坩埚1的加热器H1; 用于接收从坩埚1的开口落下的半导体单晶C10的单晶接收网140; 以及用于根据由半导体单晶C10的下降引起的重量变化来检测半导体单晶C10的取出的确定部分190。

2. 发明专利

JP2013159547A Method for producing group iii nitride semiconductor crystal 有权
标题翻译：生产III族氮化物半导体晶体的方法
公开(公告)号：JP2013159547A
公开(公告)日：2013-08-19
申请号：JP2012025478
申请日：2012-02-08
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KUMEGAWA SHOHEI , MORIYAMA MIKI , YAMAZAKI SHIRO , NAGAI SEIJI
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride semiconductor crystal by a C-added Na flux method capable of growing a high-quality group III nitride semiconductor crystal suppressing meltback of a seed crystal and not generating inclusion or abnormal growth.SOLUTION: A product produced by laminating a GaN layer 101 and an AlGaN layer 102 in due order on a sapphire substrate 100 by an MOCVD method is used as a seed crystal, and GaN 103 is grown on the AlGaN layer 102 by an Na flux method. Meltback of a GaN seed crystal, which is a big problem generated when the GaN seed crystal is used and C is added to a melt mixture, can be suppressed by forming the AlGaN layer 102 on the seed crystal outermost layer.
摘要翻译：要解决的问题：提供一种通过C加Na通量法生产III族氮化物半导体晶体的方法，该方法能够生长抑制晶种的熔融回退的高质量III族氮化物半导体晶体，并且不产生夹杂物或异常生长解决方案：使用通过MOCVD法在蓝宝石衬底100上按顺序层叠GaN层101和AlGaN层102制造的产品作为晶种，并且通过Na通量在AlGaN层102上生长GaN 103 方法。可以通过在晶种最外层上形成AlGaN层102来抑制在使用GaN晶种时产生的大问题的GaN晶种和熔融混合物中加入C的熔融反应。

3. 发明专利

JP2011207676A Method for producing group iii nitride semiconductor crystal 有权
标题翻译：生产III族氮化物半导体晶体的方法
公开(公告)号：JP2011207676A
公开(公告)日：2011-10-20
申请号：JP2010077174
申请日：2010-03-30
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B19/10
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a GaN crystal by an Na flux method that increases a crystal growth rate and a growth amount as well as improves uniformity in the thickness of a crystal.SOLUTION: While a GaN crystal is grown by an Na flux method, the distance from the GaN crystal surface in a mixture melt to a gas-liquid interface is kept to 10 mm or less, and a crucible and a seed crystal are independently rotated in the following rotation mode. That is, the rotation direction of the crucible is periodically inverted, so that the rotation direction of the seed crystal is completely opposite to the rotation direction of the crucible. By growing the GaN crystal while rotating the crucible and the seed crystal under the above conditions, the growth rate of the GaN crystal can be raised to increase the growth amount and the GaN crystal can be formed into a uniform thickness.
摘要翻译：要解决的问题：提供一种通过提高晶体生长速度和生长量的Na通量法生产GaN晶体的方法，并且提高晶体的厚度的均匀性。解决方案：GaN晶体生长在通过Na通量法，将混合熔体中的GaN晶体表面与气液界面的距离保持为10mm以下，并且坩埚和晶种以随后的旋转模式独立地旋转。也就是说，坩埚的旋转方向周期性地反转，使得晶种的旋转方向与坩埚的旋转方向完全相反。通过在上述条件下旋转坩埚和晶种来生长GaN晶体，可以提高GaN晶体的生长速率以增加生长量，并且可以将GaN晶体形成为均匀的厚度。

4. 发明专利

JP2011073894A Method for producing group iii nitride compound semiconductor 有权
标题翻译：生产III族氮化物半导体的方法
公开(公告)号：JP2011073894A
公开(公告)日：2011-04-14
申请号：JP2009224133
申请日：2009-09-29
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , HIRATA KOJI
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To reduce the stress on an interface between a crystal and a seed crystal when a GaN substrate is obtained by a flux method. SOLUTION: A GaN self-supporting 21 to be used as a seed crystal is produced by a HVPE method using a hetero substrate 1 comprising sapphire. The gallium nitride layer 2 is formed thick by controlling the HVPE conditions in such a manner that the surface 2f of the gallium nitride layer 2 has a less portion to be parallel to the principal plane of the sapphire substrate, and then the hetero substrate 1 is separated (1.A to 1.D). Although the surface 21s is not parallel to the c-plane, the GaN self-supporting 21 functioning as a seed crystal has a planar shape substantially parallel to the c-plane. The GaN self-supporting 21 is conveyed to a flux crystal growth apparatus and a crystal is grown on the surface 21s in a sodium/gallium flux under high temperature and high pressure conditions to form a nitride gallium layer 3 having a layer thickness of 2 mm (1.E). The GaN self-supporting 21 is removed by polishing. The nitride gallium single crystal substrate 31 grown by the flux method is almost free of cracks (1.F). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过通量法获得GaN衬底时，减小晶体和晶种之间的界面上的应力。解决方案：使用包含蓝宝石的异质衬底1的HVPE法制造用作晶种的GaN自支撑21。通过以如下方式控制HVPE条件来形成氮化镓层2，使得氮化镓层2的表面2f具有与蓝宝石衬底的主平面平行的较少部分，然后异质衬底1为分开（1.A至1.D）。尽管表面21s不平行于c面，但是用作晶种的GaN自支撑21具有基本上平行于c面的平面形状。将GaN自支撑体21输送到通量晶体生长装置，在高温高压条件下，在钠/镓通量的表面21s上生长晶体，形成层厚度为2mm的氮化镓层3 （1.E）。通过抛光除去GaN自支撑21。通过助熔剂法生长的氮化镓单晶基板31几乎没有裂纹（1.F）。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010037155A Method for producing group iii nitride compound semiconductor crystal 有权
标题翻译：生产III族氮化物半导体晶体的方法
公开(公告)号：JP2010037155A
公开(公告)日：2010-02-18
申请号：JP2008202899
申请日：2008-08-06
申请人： Yusuke Mori , Toyoda Gosei Co Ltd , 勇介森 , 豊田合成株式会社
发明人： YAKUSHI YASUHIDE , YAMAZAKI SHIRO , NAGAI SEIJI , SATO SHINYUKI , MORI YUSUKE , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a production method of a thick film crystal of a group III nitride compound semiconductor the major face of which is not a c-plane, for fabricating a semiconductor element free from a piezoelectric effect in the layered direction. SOLUTION: The production method of a group III nitride compound semiconductor by a flux method using an alkali metal is disclosed, wherein a group III nitride compound semiconductor substrate 10 having a normal vector of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis is used as a seed crystal, on which a crystal growth portion 11 of the group III nitride compound semiconductor is formed by a flux method, thereby a thick film crystal 100 of the group III nitride compound semiconductor having the normal line of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis is obtained. Instead of the group III nitride compound semiconductor substrate 10, a group III nitride compound semiconductor film can be used, which has a normal line vector of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis direction and is formed on a substrate of a different material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种III族氮化物化合物半导体的厚膜晶体的制造方法，该III族氮化物化合物半导体的主表面不是c面，用于制造在层状物中没有压电效应的半导体元件方向。解决方案：公开了通过使用碱金属的助熔剂法制备III族氮化物化合物半导体的方法，其中将III族氮化物化合物半导体衬底10的主面的法线向旋转0.2至使用从m轴朝向+ c轴的5度作为晶种，通过磁通法形成III族氮化物化合物半导体的晶体生长部11，从而形成组中的厚膜结晶100 获得具有从m轴朝向+ c轴旋转0.2〜5度的方向的主面的法线的III族氮化物化合物半导体。代替III族氮化物化合物半导体衬底10，可以使用III族氮化物化合物半导体膜，该III族氮化物化合物半导体膜在从m轴朝向+ c旋转0.2至5度的方向上具有主面的法线矢量并且形成在不同材料的基板上。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008297153A Apparatus and method for producing group iii nitride semiconductor 有权
标题翻译：用于生产III族氮化物半导体的装置和方法
公开(公告)号：JP2008297153A
公开(公告)日：2008-12-11
申请号：JP2007144220
申请日：2007-05-30
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： HIRATA KOJI , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B19/02
CPC分类号： C30B29/403 , C30B9/10 , Y10T117/1024
摘要： PROBLEM TO BE SOLVED: To provide a production apparatus capable of reusing Na, which has been conventionally discarded after the completion of a crystal growth step, in the production of a group III nitride semiconductor by the Na flux method. SOLUTION: After the completion of a crystal growth step of a group III nitride semiconductor by a Na flux method, when the temperature of a crucible 11 is not less than 100°C, Na is sucked by a recovery apparatus 20 and held in a liquid state in a holding container 22. The recovered Na can be taken out from a tap 24. Here, since Na which remains after the completion of a crystal growth step does not contain an impurity with a high vapor pressure, it is highly pure. Thus, if the recovered Na is reused as flux, a group III nitride semiconductor with a low impurity concentration can be produced. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够在通过Na通量法制造III族氮化物半导体时，重新使用在晶体生长步骤完成之后通常被丢弃的Na的制备装置。解决方案：在通过Na通量法完成III族氮化物半导体的晶体生长步骤之后，当坩埚11的温度不低于100℃时，Na被回收装置20吸入并保持在保持容器22中处于液态。回收的Na可以从龙头24中取出。这里，由于在结晶生长步骤结束后残留的Na不含有高蒸气压的杂质，因此高纯。因此，如果回收的Na被重新用作助熔剂，则可以生产具有低杂质浓度的III族氮化物半导体。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007238343A Method of growing group iii nitride single crystal 有权
标题翻译：生长III类氮化物单晶的方法
公开(公告)号：JP2007238343A
公开(公告)日：2007-09-20
申请号：JP2006059379
申请日：2006-03-06
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： SHIMODAIRA TAKANAO , IWAI MAKOTO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO , HIRATA KOJI
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To prevent deposition or mixing of impurity crystals generated by natural nucleus production into a grown single crystal in a method of growing a group III nitride single crystal using a flux.
SOLUTION: A group III nitride single crystal 4 is grown by immersing a seed crystal 3 in a growth source melt 5 containing a flux. A deposition preventing means 6 to prevent impurity crystals 2 generated by natural nucleus production from depositing on the seed crystal 3 is provided between a gas-liquid interface 5A of the growth source melt 5 containing the flux and the seed crystal 3. The deposition preventing means 6 is, for example, a mesh, a punched plate or a porous body.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在使用助熔剂生长III族氮化物单晶的方法中，防止由生长的单晶生成的杂质晶体的沉积或混合。解决方案：通过将晶种3浸入含有助熔剂的生长源熔体5中来生长III族氮化物单晶4。在含有助熔剂的生长源熔融物5的气液界面5A和晶种3之间，设置防止由天然核产生的杂质晶体2沉积在晶种3上的防沉积装置6.防沉积装置例如，图6所示的是网眼，穿孔板或多孔体。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2004080047A METHOD FOR MANUFACTURIG GALLIUM NITRIDE(GaN) COMPOUND SEMICONDUCTOR 审中-公开
公开(公告)号：JP2004080047A
公开(公告)日：2004-03-11
申请号：JP2003346860
申请日：2003-10-06
申请人： Japan Science & Technology Agency , Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , Univ Nagoya , 名古屋大学長 , 株式会社豊田中央研究所 , 独立行政法人科学技術振興機構 , 豊田合成株式会社
发明人： MANABE KATSUHIDE , SASA MICHINARI , KATO HISAYOSHI , YAMAZAKI SHIRO , HASHIMOTO MASAFUMI , AKASAKI ISAMU
IPC分类号： C23C16/34 , H01L21/205 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturig a GaN compound semiconductor which is useful to elevate the blue light emitting strength of the light emitting diode of the GaN compound semiconductor. SOLUTION: A gas containig silicon of a controlled concentration ratio is supplied in the predetermined proportion to the other material gas, and silicon being effective as a donor is added to increase an electron concentration. Consequently, a high-carrier-concentration layer is formed, which is composed of the n type GaN compound semiconductor( Al X Ga 1-X N, including X=0) controlled in the electron concentration of 1×10 17 -1×10 19 /cm 3 . Thereafter, a needed p-layer etc. is formed. The GaN compound semiconductor light-emitting-element manufactured by the manufacturing method is improved in the blue light emitting strength. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2003037069A Method for manufacturing iii nitride based compound semiconductor 有权
标题翻译：制备III型氮化物化合物半导体的方法
公开(公告)号：JP2003037069A
公开(公告)日：2003-02-07
申请号：JP2001221425
申请日：2001-07-23
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KOIKE MASAYOSHI , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To obtain a crack-free thin film III nitride based compound semiconductor. SOLUTION: A sapphire substrate 1 having a major surface of a face c is set in an RF sputtering device (a). An intermediate layer 2 of ZnO having thickness of 100 nm is formed by sputtering a target of ZnO (b). The sapphire substrate 1 is then set in a halogen transporter and heated at 1000 deg.C, and GaClx (x=1-3) and NH3 are supplied to the surface of the sapphire substrate 1, thus growing a GaN layer 3 of about 200 μm thick (c). Subsequently, hydrogen chloride(HCl) gas is supplied and the intermediate layer 2 of ZnO is etched by the hydrogen chloride(HCl) gas starting from the circumferential edge part thereof (d). Consequently, a region for jointing the intermediate layer 2 of ZnO and the sapphire substrate 1 can be reduced (e) or substantially eliminated. Cracking due to thermal stress can be prevented even if the sapphire substrate 1 is returned back to the room temperature and a thick film GaN substrate 3 can be obtained.
摘要翻译：要解决的问题：获得无裂纹的III族氮化物基化合物半导体。解决方案：在RF溅射装置（a）中设置具有面c主表面的蓝宝石衬底1。通过溅射ZnO（b）的靶，形成厚度为100nm的ZnO的中间层2。然后将蓝宝石衬底1放置在卤素转运体中并在1000℃加热，并将GaClx（x = 1-3）和NH 3供应到蓝宝石衬底1的表面，从而生长约200的GaN层3 μm厚（c）。随后，从其周边部分（d）开始供给氯化氢（HCl）气体，用氯化氢（HCl）气体蚀刻ZnO的中间层2。因此，可以减小（e）或基本上消除用于连接ZnO的中间层2和蓝宝石衬底1的区域。即使将蓝宝石衬底1返回到室温，也可以防止由于热应力引起的破裂，并且可以获得厚膜GaN衬底3。

10. 发明专利

JP2011173792A Apparatus for producing nitride single crystal 有权
标题翻译：用于生产氮化物单晶的装置
公开(公告)号：JP2011173792A
公开(公告)日：2011-09-08
申请号：JP2011099016
申请日：2011-04-27
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B9/10 , C30B7/00 , C30B19/02 , C30B19/06 , C30B29/406 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064 , Y10T117/1096
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a nitride single crystal, by which unevenness in a growing state of the nitride single crystal and an increase of defective products resulting from a difference in temperature within a furnace can be prevented in growth of a nitride single crystal within a furnace by a flux method. SOLUTION: The apparatus has a crucible for storing a solution; an inner container 16 for storing the crucible; a heating container 31 for storing the inner container 16, the heating container 31 including heating elements 14, a container body 13 provided with the heating elements 14 and a lid 12 combined with the container body 13; and a pressure vessel 30 for storing the heating container 31 and for charging an atmosphere comprising at least nitrogen gas; and a supporting member 17 supporting the inner container on the container body 13. A closed space 18 is formed by the supporting member 17, the heating container 13 and the inner container 16, and at least one heating element 19 faces the closed space 18. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长氮化物单晶的方法，其中可以防止氮化物单晶的生长状态的不均匀性和由炉内的温度差导致的不良产物的增加通过助熔剂法在炉内生长氮化物单晶。解决方案：该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器16; 用于储存内部容器16的加热容器31，包括加热元件14的加热容器31，设置有加热元件14的容器主体13和与容器主体13组合的盖12; 和用于储存加热容器31并用于装入至少包含氮气的气氛的压力容器30; 以及支撑构件17，其支撑在容器主体13上的内部容器。封闭空间18由支撑构件17，加热容器13和内部容器16形成，并且至少一个加热元件19面向封闭空间18。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式