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1. 发明专利

JP2007238343A Method of growing group iii nitride single crystal 有权
标题翻译：生长III类氮化物单晶的方法
公开(公告)号：JP2007238343A
公开(公告)日：2007-09-20
申请号：JP2006059379
申请日：2006-03-06
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： SHIMODAIRA TAKANAO , IWAI MAKOTO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO , HIRATA KOJI
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To prevent deposition or mixing of impurity crystals generated by natural nucleus production into a grown single crystal in a method of growing a group III nitride single crystal using a flux.
SOLUTION: A group III nitride single crystal 4 is grown by immersing a seed crystal 3 in a growth source melt 5 containing a flux. A deposition preventing means 6 to prevent impurity crystals 2 generated by natural nucleus production from depositing on the seed crystal 3 is provided between a gas-liquid interface 5A of the growth source melt 5 containing the flux and the seed crystal 3. The deposition preventing means 6 is, for example, a mesh, a punched plate or a porous body.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在使用助熔剂生长III族氮化物单晶的方法中，防止由生长的单晶生成的杂质晶体的沉积或混合。解决方案：通过将晶种3浸入含有助熔剂的生长源熔体5中来生长III族氮化物单晶4。在含有助熔剂的生长源熔融物5的气液界面5A和晶种3之间，设置防止由天然核产生的杂质晶体2沉积在晶种3上的防沉积装置6.防沉积装置例如，图6所示的是网眼，穿孔板或多孔体。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2011173792A Apparatus for producing nitride single crystal 有权
标题翻译：用于生产氮化物单晶的装置
公开(公告)号：JP2011173792A
公开(公告)日：2011-09-08
申请号：JP2011099016
申请日：2011-04-27
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B9/10 , C30B7/00 , C30B19/02 , C30B19/06 , C30B29/406 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064 , Y10T117/1096
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a nitride single crystal, by which unevenness in a growing state of the nitride single crystal and an increase of defective products resulting from a difference in temperature within a furnace can be prevented in growth of a nitride single crystal within a furnace by a flux method. SOLUTION: The apparatus has a crucible for storing a solution; an inner container 16 for storing the crucible; a heating container 31 for storing the inner container 16, the heating container 31 including heating elements 14, a container body 13 provided with the heating elements 14 and a lid 12 combined with the container body 13; and a pressure vessel 30 for storing the heating container 31 and for charging an atmosphere comprising at least nitrogen gas; and a supporting member 17 supporting the inner container on the container body 13. A closed space 18 is formed by the supporting member 17, the heating container 13 and the inner container 16, and at least one heating element 19 faces the closed space 18. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长氮化物单晶的方法，其中可以防止氮化物单晶的生长状态的不均匀性和由炉内的温度差导致的不良产物的增加通过助熔剂法在炉内生长氮化物单晶。解决方案：该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器16; 用于储存内部容器16的加热容器31，包括加热元件14的加热容器31，设置有加热元件14的容器主体13和与容器主体13组合的盖12; 和用于储存加热容器31并用于装入至少包含氮气的气氛的压力容器30; 以及支撑构件17，其支撑在容器主体13上的内部容器。封闭空间18由支撑构件17，加热容器13和内部容器16形成，并且至少一个加热元件19面向封闭空间18。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2008150239A Method for producing group iii nitride-based compound semiconductor crystal 有权
标题翻译：用于生产III族氮化物化合物半导体晶体的方法
公开(公告)号：JP2008150239A
公开(公告)日：2008-07-03
申请号：JP2006339056
申请日：2006-12-15
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00 , H01L21/208
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： PROBLEM TO BE SOLVED: To easily, inexpensively produce a high-quality bulky semiconductor crystal by crystal growth treatment based on a flux method.
SOLUTION: A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) on the basis of the flux method in a nitrogen (N
2 ) atmosphere at 3.7 MPa and 870°C employing a flux mixture including Ga, Na and Li at about 870°C. Since the back surface of a template 10 is the R-plane of a sapphire substrate 11, the template is ready to be dissolved or corroded in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from its back surface resulting in separation or disappearance. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the whole of sapphire substrate 11 is dissolved in the flux mixture while maintaining the temperature of a crucible at 850 to 880°C.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过基于通量法的晶体生长处理，能够容易地廉价地制造高质量的大体积的半导体晶体。解决方案：基于氮气（N 2 ）气氛中的通量法，在晶种（GaN层13）的晶体生长表面上生长GaN单晶20 在约870℃下使用包含Ga，Na和Li的助熔剂混合物在870℃和870℃。由于模板10的后表面是蓝宝石衬底11的R平面，所以模板准备好从其后表面溶解或腐蚀到焊剂混合物中。因此，模板10从其背面逐渐溶解或腐蚀，导致分离或消失。当GaN单晶20生长到足够的厚度，例如约500μm以上时，将整个蓝宝石基板11溶解在助熔剂混合物中，同时将坩埚的温度保持在850〜880℃。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007277058A Method and apparatus for manufacturing group iii nitride compound semiconductor 有权
标题翻译：制备III类氮化物半导体的方法和装置
公开(公告)号：JP2007277058A
公开(公告)日：2007-10-25
申请号：JP2006106860
申请日：2006-04-07
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： PROBLEM TO BE SOLVED: To satisfactorily heat a raw material nitrogen gas in an Na-Ga flux method. SOLUTION: An openable and closable double-airtight vessel comprising a reaction vessel 100 and an outer vessel 200, both of which are adaptable to high-temperature high-pressure conditions, is used. The reaction vessel 100 is heated by heating units 31a, 31b and 31c that are placed inside the outer vessel. A nitrogen feed pipe 10 and an exhaust pipe 11 are connected to the reaction vessel 100, and feeding and exhaust of nitrogen are performed while adjusting the pressure inside the reaction vessel 100 to e.g. 100 atm by a control device, not illustrated. Here, when the nitrogen fed from the nitrogen feed pipe 10 passes through a heated part 10a that spirally proceeds around the periphery of the reaction vessel 100, it passes through it slowly enough to be heated to a temperature comparable to that of the reaction vessel 100 by the heating units 31a, 31b and 31c. This enables sufficient heating of the nitrogen before it is fed to the Na/Ga flux surface inside the reaction vessel 100. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：以Na-Ga通量法令人满意地加热原料氮气。
解决方案：使用可开闭的双重密闭容器，其包括可应用于高温高压条件的反应容器100和外容器200。反应容器100被放置在外容器内部的加热单元31a，31b和31c加热。氮气供给管10和排气管11连接到反应容器100，并且在将反应容器100内的压力调节到例如氮气的同时进行氮的供给和排出。 100大气压通过控制装置，未示出。这里，当从氮气进料管10供给的氮气通过螺旋地在反应容器100的周边周围进行的加热部分10a时，其缓慢地通过，加热到与反应容器100相当的温度通过加热单元31a，31b和31c。这样就可以在将氮气供给到反应容器100内的Na / Ga通量表面之前进行充分的加热。（C）2008，JPO＆INPIT

5. 发明专利

JP2011153073A Apparatus for manufacturing nitride single crystal 有权
标题翻译：用于制造硝酸单晶的装置
公开(公告)号：JP2011153073A
公开(公告)日：2011-08-11
申请号：JP2011099017
申请日：2011-04-27
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B19/06 , H01L21/208
CPC分类号： C30B9/10 , C30B7/00 , C30B19/02 , C30B19/06 , C30B29/406 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064 , Y10T117/1096
摘要： PROBLEM TO BE SOLVED: To prevent, in growth of nitride single crystal in a furnace by a flux method, the unevenness in growing state of the nitride single crystal and the increase of defectives resulting from a difference in temperature in the furnace. SOLUTION: There is provided an apparatus for growing a nitride single crystal using a solution containing a flux and a raw material. The apparatus includes: a crucible for housing the solution; an inner container 16 for housing the crucible; and a heating container 31 which houses the inner container 16 and is provided with a heating body 14, a container body 13 in which the heating body 14 is provided; and a lid 12 combined with the container body 13. The apparatus further includes a pressure container 30 which houses the heating container 31 and is to be filled with an atmosphere including at least nitrogen gas, and a cylindrical heat insulating member 11 provided between the outer wall face of the heating container 31 and the inner wall face 30a of the pressure container 30. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止在熔炉中的氮化物单晶的生长中，氮化物单晶的生长状态的不均匀性和由炉中的温度差引起的缺陷的增加。解决方案：提供一种使用含有助熔剂和原料的溶液生长氮化物单晶的装置。该装置包括：用于容纳溶液的坩埚; 用于容纳坩埚的内部容器16; 和容纳内容器16的加热容器31，设有加热体14，设置有加热体14的容器主体13。以及与容器主体13组合的盖12.该装置还包括容纳加热容器31并且至少填充至少包含氮气的气氛的压力容器30和设置在外部的圆筒形绝热构件11 加热容器31的壁面和压力容器30的内壁面30a。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2007277059A Apparatus for manufacturing group iii nitride compound semiconductor 审中-公开
标题翻译：用于制造III类氮化物半导体的装置
公开(公告)号：JP2007277059A
公开(公告)日：2007-10-25
申请号：JP2006106861
申请日：2006-04-07
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B9/00 , C30B29/403
摘要： PROBLEM TO BE SOLVED: To prevent an atmosphere in an outer vessel from diffusing into an inner vessel in the flux method.
SOLUTION: An openable and closable double vessel comprising a non-pressure-resistant reaction vessel 100 that is adaptable to an elevated temperature and an outer vessel 200 that is adaptable to high-temperature high-pressure conditions, is used. The reaction vessel 100 is heated by heating units 31a, 31b and 31c that are placed inside the outer vessel. A nitrogen feed pipe 10 and an exhaust pipe 11 are connected to the reaction vessel 100. A valve 10v is connected to the nitrogen feed pipe 10, and its other end is connected to a high-pressure nitrogen tank. A trap 11t is connected to the exhaust pipe 11, which cools exhaust air by a given means to condense and remove sodium vapor and gallium vapor from the exhaust air. A secondary feed pipe 11' is connected to the trap 11t, which feeds the exhaust air from which the sodium vapor and the gallium vapor are removed to the outer vessel 200. An exhaust pipe 21 is connected to the outer vessel 200, which is connected to an air exhaust pump, not illustrated, via a valve 21v.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止外部容器中的气氛以通量方法扩散到内部容器中。解决方案：使用可开闭的双层容器，其包括适于高温的非耐压反应容器100和适用于高温高压条件的外容器200。反应容器100被放置在外容器内部的加热单元31a，31b和31c加热。氮气供给管10和排气管11连接到反应容器100.阀10v连接到氮气供给管10，另一端与高压氮气罐连接。排气管11t连接有排气管11，排气管11通过给定的方式冷却排出的空气，以从排气中冷凝和去除钠蒸汽和镓蒸气。二次进料管11'连接到捕集器11t，其将从其中除去钠蒸汽和镓蒸气的排出空气送到外容器200.排气管21连接到外容器200，外部容器200被连接通过阀21v向未图示的排气泵。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007254201A Method for manufacturing single crystal 审中-公开
标题翻译：制造单晶的方法
公开(公告)号：JP2007254201A
公开(公告)日：2007-10-04
申请号：JP2006080258
申请日：2006-03-23
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： SHIMODAIRA TAKANAO , IWAI MAKOTO , IMAI KATSUHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO
IPC分类号： C30B9/00 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To improve a nitriding rate in single crystal growth and to prevent discoloring of a single crystal upon growing a single crystal by a flux method using a source material containing an easily oxidizing substance or easily moisture absorbing substance such as Na.
SOLUTION: Impurities 18 locally present in an upper layer portion 7a of a growth source solution is discharged from a reaction chamber 18, and then a single crystal 8 is grown in the source solution 7.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：为了提高单晶生长中的渗氮速率，并且通过使用含有容易氧化物质的源材料或容易吸湿物质的助熔剂法生长单晶来防止单晶的褪色，例如娜。解决方案：局部存在于生长源溶液的上层部分7a中的杂质18从反应室18排出，然后在源溶液7中生长单晶8.版权所有（C） 2008年，日本特许厅和INPIT

8. 发明专利

JP2007238344A Heat treatment method of easily oxidizable or easily moisture-absorbing substance 有权
标题翻译：易氧化或易吸湿性物质的热处理方法
公开(公告)号：JP2007238344A
公开(公告)日：2007-09-20
申请号：JP2006059408
申请日：2006-03-06
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , HIGASHIHARA SHUHEI , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , YAMAZAKI SHIRO , HIRATA KOJI
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for preventing unnecessary oxidation or moisture absorption by shielding a flux component being an easily oxidizable or easily moisture-absorbing substance, such as metallic sodium, from oxygen or moisture until a reaction stage in producing gallium nitride by a flux method.
SOLUTION: The whole raw material 20 consisting of a flux component being an easily oxidizable or easily moisture-absorbing substance, such as metallic sodium 3, metallic lithium 5, etc., and metallic gallium is covered with a metal foil 2 without crevice and placed on a seed crystal substrate 6. In this status, a container is installed in a crystal growing device and heated under a nitrogen pressure. Thus the raw material 20 and the metal foil 2 are melted, causing the growth of a gallium nitride single crystal film on the seed crystal substrate 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止不必要的氧化或吸湿的方法，该方法通过屏蔽作为容易氧化或容易吸湿的物质（例如金属钠）的助熔剂成分从氧气或水分直到生产中的反应阶段氮化镓通过助焊剂法。解决方案：由金属钠3，金属锂5等容易氧化或容易吸湿的物质的金属成分和金属镓构成的整个原料20被金属箔2覆盖而没有缝隙并放置在籽晶衬底6上。在此状态下，将容器安装在晶体生长装置中并在氮气压力下加热。因此，原料20和金属箔2熔化，导致晶种基板6上的氮化镓单晶膜的生长。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2008222492A Melt composition for growing gallium nitride single crystal and method for growing gallium nitride single crystal 有权
标题翻译：用于生长氮化镓单晶的熔融组合物和用于生长氮化镓单晶的方法
公开(公告)号：JP2008222492A
公开(公告)日：2008-09-25
申请号：JP2007063110
申请日：2007-03-13
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , YAMAMURA YOSHIHIKO , YAMAZAKI SHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method by which the impurity band light-emission of a crystal can be reduced, the crystal having good transparency can be obtained, and the flatness of the crystal can be improved when a GaN single crystal is grown by a flux method using a Ga-Na-based melt.
SOLUTION: A melt composition containing gallium, sodium, barium and lithium is used for growing a gallium nitride single crystal by the flux method. The compositional ratio except gallium being a raw material is such that the total amount of barium and lithium is 0.02 to 1.0 mol% when the amount of sodium is 100 mol%.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2008266067A Method for producing aluminum nitride single crystal 有权
标题翻译：用于生产氮化钠单晶的方法
公开(公告)号：JP2008266067A
公开(公告)日：2008-11-06
申请号：JP2007110363
申请日：2007-04-19
申请人： Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 豊田合成株式会社
发明人： SHIMODAIRA TAKANAO , IMAI KATSUHIRO , IWAI MAKOTO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , ARAI MASAKI , YAMAZAKI SHIRO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing aluminum nitride at a high productivity by a flux method.
SOLUTION: Aluminum nitride single crystal is grown from a melt containing aluminum and a flux in the presence of a nitrogen-containing gas, wherein the growing temperature of the aluminum nitride single crystal is 1,250°C or above and 1,500°C or below, the partial pressure of the nitrogen in the nitrogen-containing gas during growing is 0.01 MPa or above and 1 MPa or below, the molar ratio of aluminum to the flux in the melt is 40:60-90:10, the flux is comprised of one kind or more of a first metal selected from the group consisting of tin, gallium, indium and bismuth and comprised of one kind or more of a second metal belonging to an alkaline metal and an alkaline earth metal, and the molar ratio of the first metal to the second metal is 1:99-99:1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过助熔剂方法以高生产率生长氮化铝的方法。解决方案：氮化铝单晶在含氮气体的存在下由含有铝和助熔剂的熔体生长，其中氮化铝单晶的生长温度为1,250℃以上且1500℃，或以下，生长时的含氮气体中的氮分压为0.01MPa以上且1MPa以下，铝与熔体中的助熔剂的摩尔比为40:60〜90:10，通量为由选自锡，镓，铟和铋的一种或多种第一金属组成，并且由一种或多种属于碱金属和碱土金属的第二金属组成，并且其摩尔比第二金属的第一金属为1:99-99:1。版权所有（C）2009，JPO＆INPIT

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