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1. 发明专利

JP2004342719A Semiconductor laser apparatus and its manufacturing method 审中-公开
公开(公告)号：JP2004342719A
公开(公告)日：2004-12-02
申请号：JP2003135408
申请日：2003-05-14
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： TANAKA AKIRA , ITO YOSHIYUKI , HORIUCHI OSAMU , MAKUTA AKIO , KURONAGA KOICHI , SHIOZAWA HIDEO
IPC分类号： G11B7/125 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/06 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus that is improved further in luminous characteristics by solving the problem caused by a vertical ridge stripe, and to provide a method of manufacturing the laser apparatus. SOLUTION: The semiconductor laser apparatus is provided with a first-conductivity clad layer (2), an active layer (4) provided on the clad layer (2), and second-conductivity clad layers (6 and 8) provided on the active layer (4). At least parts of the second-conductivity clad layers (6 and 8) are formed in the state of a ridge stripe (10). The semiconductor laser apparatus is characterised in that the ridge stripe (10) has a vertical section (10b) which is provided on its upper side and has nearly vertical side faces and an inclined section (10a) which is provided on the underside of the vertical section (10b), and the side faces of which are inclined so that the width of the stripe (10) may be expanded toward the active layer (4). COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2015050306A 熱電発電装置审中-公开
标题翻译：热电发生器
公开(公告)号：JP2015050306A
公开(公告)日：2015-03-16
申请号：JP2013180740
申请日：2013-08-30
申请人：株式会社東芝 , Toshiba Corp
发明人： GOTO KOICHI , SASAKI KEIICHI , HORIKAWA DAISUKE , TANAKA AKIRA
IPC分类号： H01L35/30 , H01L35/32 , H02N11/00
摘要：【課題】発電量を向上させること。【解決手段】一実施形態による熱電発電装置は、両面の温度差により発電する熱電変換モジュール13と、熱電変換モジュール13を挟むように設けられ、互いに温度が異なる流体を流す高温チャンバ11A及び低温チャンバ11Bと、高温チャンバ11A及び低温チャンバ11Bにおける熱電変換モジュール13との接合面以外の面に取り付けられる部材と、前記部材同士を引き寄せて締め付けるネジ機構とを含み、高温チャンバ11A及び低温チャンバ11Bの熱電変換モジュール13に対する締め付けを実施する締め付け用治具50とを具備する熱電発電装置において、高温チャンバ11Aの全部あるいは一部、または低温チャンバ11Bの全部あるいは一部のいずれかの内部に、流路断面積を小さくさせる挿入物を設けたことを特徴とする。【選択図】図1
摘要翻译：要解决的问题：增加热电发电机的发电量。解决方案：根据一个实施例的热电发电机包括：热电转换模块13，其通过其两个表面之间的温度差发电; 高温室11A和低温室11B，其设置成夹着每个热电转换模块13并使彼此不同温度的流体流动; 以及紧固工具50，其包括附接在除了接合面以外的表面的构件，高温室11A和低温室11B中的每个热电转换模块13以及用于拉紧要紧固的构件的螺钉机构，并且紧固每个热电转换模块13连接到高温室11A和低温室11B。在热电发电机中，在高温室11A或低温室11B的全部或一部分的全部或一部分的一个的内部设置用于减少通道横截面的插入件。

3. 发明专利

JP2013214700A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013214700A
公开(公告)日：2013-10-17
申请号：JP2012181084
申请日：2012-08-17
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01L33/06 , H01L33/22 , H01L33/32 , H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with a high optical output.SOLUTION: In a semiconductor light-emitting element 10, a semiconductor light-emitting layer 15 is provided between an N-type semiconductor layer 12 and P-type semiconductor layers 13 and 14. The semiconductor light-emitting layer 15 has a multiquantum well structure in which well layers 26 and barrier layers 25 are alternately stacked. The band gap of a barrier layer 25b closest to the P-type semiconductor layer 13 of the barrier layers 25 sandwiched between the well layers 26 is narrower than that of the other barrier layers 25c and 25d. N-side electrodes 17a and 17b and a P-side electrode 18 are electrically connected to the N-type semiconductor layer 12 and the P-type semiconductor layer 14 so that current flows in a direction substantially perpendicular to a primary surface 15a of the semiconductor light-emitting layer 15.
摘要翻译：要解决的问题：提供具有高光输出的半导体发光元件。解决方案：在半导体发光元件10中，半导体发光层15设置在N型半导体层12和P- 型半导体层13和14.半导体发光层15具有交替层叠阱层26和势垒层25的多量子阱结构。夹在阱层26之间的阻挡层25的最接近P型半导体层13的势垒层25b的带隙比其他阻挡层25c，25d的窄带宽窄。 N侧电极17a和17b以及P侧电极18与N型半导体层12和P型半导体层14电连接，使得电流在与半导体的主表面15a基本垂直的方向上流动发光层15。

4. 发明专利

JP2013193082A Joining device and joining method 有权
标题翻译：加工设备和接合方法
公开(公告)号：JP2013193082A
公开(公告)日：2013-09-30
申请号：JP2012059186
申请日：2012-03-15
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA DAIJIRO , TANAKA AKIRA , SUYAMA AKIKO
IPC分类号： B23K3/04 , B23K1/00 , B23K1/005 , B23K1/19 , B23K26/00 , B23K26/32 , C04B37/00
摘要： PROBLEM TO BE SOLVED: To prevent cracks of ceramics caused by local heating.SOLUTION: Members to be joined, junction parts of which have the same shape, are arranged axisymmetrically, and a joining device 10 joins the members to be joined in a rotated state based on a construction condition by interposing a junction medium between the junction parts of the members. The joining device includes: an irradiating part 11 which irradiates a surface of the rotating junction medium with a laser light based on the construction condition and joins the members; a measuring part 13 which measures surface temperatures of at least two points of the members; a temperature distribution calculating part 21 which obtains temperature distribution of the members based on the surface temperatures of the members measured by the measuring part; a thermal stress distribution calculating part 22 which obtains thermal stress distribution based on the temperature distribution of the members obtained by the temperature distribution calculating part; and a determination part which determines the construction condition in response to the thermal stress distribution obtained by the thermal stress distribution calculating part.
摘要翻译：要解决的问题：为了防止由局部加热引起的陶瓷的裂纹。解决方案：接合部件具有相同形状的接合部件被轴对称地布置，接合装置10以旋转状态连接待接合的部件基于构造条件，通过在构件的接合部之间插入接合介质。接合装置包括：照射部11，其基于构造条件以激光照射旋转的接合介质的表面，并且接合构件; 测量部件13，其测量部件的至少两个点的表面温度; 温度分布计算部21，其基于由测量部测量的构件的表面温度获得构件的温度分布; 热应力分布计算部22，其基于由温度分布计算部获得的构件的温度分布获得热应力分布; 以及确定部，其根据由热应力分布计算部获得的热应力分布来决定施工条件。

5. 发明专利

JP2013192401A Power demand control apparatus 审中-公开
标题翻译：电力需求控制装置
公开(公告)号：JP2013192401A
公开(公告)日：2013-09-26
申请号：JP2012057757
申请日：2012-03-14
申请人： Toshiba Corp , 株式会社東芝
发明人： OKAYAMA HITOSHI , OZAKI YUKIHIRO , TANAKA AKIRA , TSUJI HISASHI , TAKASHIMA TSUTOMU
IPC分类号： H02J3/46 , H01M10/48 , H02J3/00 , H02J3/32 , H02J3/38 , H02J7/00 , H02J7/35 , H02J13/00
CPC分类号： G06F1/26 , H02J3/005 , H02J3/32 , H02J3/381 , H02J13/0006 , Y02E40/72 , Y02E60/722 , Y04S10/12 , Y04S10/14
摘要： PROBLEM TO BE SOLVED: To contribute to developing an appropriate power demand plan in view of dispersed power sources arranged at respective positions in a power system.SOLUTION: The power demand control apparatus comprises: measurement means for measuring output power characteristics of dispersed power sources arranged at respective positions in a power system; and determination means for determining whether or not the respective dispersed power sources arranged at the respective positions should be dispersed for a power demand plan on a predetermined date, on the basis of the measured output power characteristics.
摘要翻译：要解决的问题：考虑到布置在电力系统中的各个位置处的分散的电源，有助于开发适当的电力需求计划。解决方案：电力需求控制装置包括：测量装置，用于测量分散的电源的输出功率特性，在电力系统的各个位置; 以及确定装置，用于基于所测量的输出功率特性来确定在预定日期上是否应该分配布置在各个位置处的各个分散的功率源用于功率需求计划。

6. 发明专利

JP2013102061A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013102061A
公开(公告)日：2013-05-23
申请号：JP2011245023
申请日：2011-11-09
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , MOTOJIMA YOKO
IPC分类号： H01L33/32 , H01L33/38
CPC分类号： H01L33/06 , H01L33/38 , H01L2224/13
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved luminous efficiency by promoting supply of holes.SOLUTION: In a semiconductor light-emitting element 10, a light-emitting layer 13 of a multiquantum well structure, in which well layers of a first conductivity type having a first impurity concentration and barrier layers of the first conductivity type having a second impurity concentration with higher concentration than the first impurity concentration are alternately stacked, is partially provided on a first semiconductor layer 12. Second semiconductor layers 15 and 16 of a second conductivity type having substantially uniform bandgap and a single composition are provided on the light-emitting layer 13. First electrodes 21 and 22 are provided on the first semiconductor layer 12. Second electrodes 23 and 24 are provided on the second semiconductor layer 16. A first distance L1 between the first electrode 22 and the second electrode 24 in a direction parallel to the light-emitting layer 13 is larger than a second distance L2 between the first electrodes 21 and 22 and the second electrodes 23 and 24 in a direction perpendicular to the light-emitting layer 13.
摘要翻译：要解决的问题：通过促进孔的供应来提供具有改善的发光效率的半导体发光元件。解决方案：在半导体发光元件10中，具有多量阱结构的发光层13，其中具有第一杂质浓度的第一导电类型的阱层和具有第一导电类型的阻挡层的阱层具有交替堆叠具有比第一杂质浓度高的浓度的第二杂质浓度部分地设置在第一半导体层12上。具有基本均匀的带隙和单一组成的第二导电类型的第二半导体层15和16设置在发光层第一电极21和22设置在第一半导体层12上。第二电极23和24设置在第二半导体层16上。第一电极22和第二电极24之间的平行方向上的第一距离L1 发光层13的尺寸大于第一电极21和22与第二电极ele之间的第二距离L2 在与发光层13垂直的方向上插入23和24。（C）2013，JPO＆INPIT

7. 发明专利

JP2013093399A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013093399A
公开(公告)日：2013-05-16
申请号：JP2011233610
申请日：2011-10-25
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01L33/38 , H01L21/205 , H01L33/32
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element where high and low carrier density regions are provided to improve the overall luminous efficacy.SOLUTION: In a semiconductor light emitting element 10, a semiconductor light emitting layer 15 is provided between a first conductive type first semiconductor layer 12 and a second conductive type second semiconductor layer 14. A mesh first electrode 16 is provided on the first semiconductor layer 12 opposite to the semiconductor light emitting layer 15. A dot second electrode 18a is provided on the second semiconductor layer 14 opposite to the semiconductor light emitting layer 15 so as to overlap with a center of the mesh of the first electrode 16 in a plane view arranged parallel to a surface of the second semiconductor layer 14.
摘要翻译：要解决的问题：提供一种提供高和低载流子密度区域以提高整体发光效率的半导体发光元件。解决方案：在半导体发光元件10中，半导体发光层15设置在第一导电型第一半导体层12和第二导电型第二半导体层14之间。第一栅极第一电极16设置在第一半导体层12与半导体发光层15相对。在第二半导体层14上与半导体发光层15相对设置点状第二电极18a，以便与第一电极16的网格的中心重叠平面图，平行于第二半导体层14的表面。版权所有：（C）2013，JPO＆INPIT

8. 发明专利

JP2013007652A Inspection method and inspection device for synthetic resin material 审中-公开
标题翻译：合成树脂材料的检验方法和检验装置
公开(公告)号：JP2013007652A
公开(公告)日：2013-01-10
申请号：JP2011140560
申请日：2011-06-24
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , YAMAOKA KAORU
IPC分类号： G01N3/40
CPC分类号： G01N3/42 , G01N33/44 , G01N2203/0298
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device for synthetic resin material which allows a user to acquire a highly-accurate inspection result.SOLUTION: The inspection method for synthetic resin material includes multiple steps. In one step, an analyte of a synthetic resin material is cut or polished so that a plane surface is formed. In another step, a measured value on each of multiple positions on the plane surface is obtained by pressing each of the multiple positions. In another step, each measured value or a physical quantity calculated on the basis of each measured value is output in association with each position.
摘要翻译：要解决的问题：提供允许用户获得高精度检查结果的合成树脂材料的检查方法和检查装置。
解决方案：合成树脂材料的检验方法包括多个步骤。在一个步骤中，合成树脂材料的分析物被切割或抛光，从而形成平面。在另一步骤中，通过按压多个位置中的每一个，获得平面上的多个位置中的每一个上的测量值。在另一步骤中，基于每个测量值计算的每个测量值或物理量与每个位置相关联地输出。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012227289A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2012227289A
公开(公告)日：2012-11-15
申请号：JP2011092486
申请日：2011-04-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01L33/38
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with improved luminous efficiency.SOLUTION: A semiconductor light-emitting device according to an embodiment comprises a stack including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The semiconductor light-emitting device further comprises: a transparent electrode provided on a first primary surface of the stack at the first semiconductor layer side and having a thin film portion, a first thick film portion thicker than the thin film portion, and a stripe-shaped second thick film portion thicker than the thin film portion and extending in parallel to the first primary surface from the first thick film portion; a first electrode provided on the first thick film portion; and a second electrode electrically connected to the second semiconductor layer.
摘要翻译：要解决的问题：提供具有改善的发光效率的半导体发光器件。解决方案：根据实施例的半导体发光器件包括：堆叠，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层之间的发光层层和第二半导体层。半导体发光器件还包括：设置在第一半导体层侧的堆叠的第一主表面上并具有薄膜部分的透明电极，比薄膜部分厚的第一厚膜部分，第二厚膜部分比薄膜部分厚，并且从第一厚膜部分平行于第一主表面延伸; 设置在所述第一厚膜部分上的第一电极; 和与第二半导体层电连接的第二电极。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012194120A Core melt holding device 审中-公开
标题翻译： CORE MELT HOLDING DEVICE
公开(公告)号：JP2012194120A
公开(公告)日：2012-10-11
申请号：JP2011059689
申请日：2011-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KUNO FUMIYO , WADA KUNIHIKO , ISHIWATARI YUTAKA , KAMEDA TSUNEJI , TANAKA AKIRA , KATAGIRI NORIYUKI , HAMAZAKI RYOICHI
IPC分类号： G21C9/016
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To provide a core melt holding device which can hold a core melt for a predetermined period of time against the heat of the core melt and also can withstand a mechanical impact due to the fall of the core melt.SOLUTION: A core melt holding device is provided below a reactor pressure vessel. The holding device includes a heat-resistant layer and an impact mitigation layer having a compression strength lower than that of the heat-resistant layer.

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