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1. 发明专利

JP2015061062A 光電変換素子の製造方法审中-公开
标题翻译：光电转换元件制造方法
公开(公告)号：JP2015061062A
公开(公告)日：2015-03-30
申请号：JP2013196115
申请日：2013-09-20
申请人：株式会社東芝 , Toshiba Corp
发明人： HIRAGA HIROKI , NAKAGAWA NAOYUKI , SHIBAZAKI SOICHIRO , YAMAZAKI MUTSUKI , YAMAMOTO KAZUE , SAKURADA SHINYA , INABA MICHIHIKO
IPC分类号： H01L31/06
CPC分类号： H01L31/20 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L31/0322 , H01L31/0326 , H01L31/068 , Y02E10/541 , Y02E10/547 , Y02P70/521
摘要：【課題】変換効率の高い光電変換素子を製造する方法を提供する。【解決手段】第1電極上に、カルコパイライト化合物、ステナイト化合物とケステナイト化合物の化合物半導体のうちの少なくともいずれかを含む光電変換層前駆体を形成する光電変換層前駆体形成工程を有し、光電変換層前駆体形成工程で得られた光電変換層前駆体は、第1電極側の化合物半導体がアモルファス、あるいは第1電極側の化合物半導体の平均結晶粒径が第1電極とは反対側の平均結晶粒径よりも大、の少なくともいずれかであって、光電変換層前駆体形成工程後、第1電極上に形成された光電変換層前駆体をIIa族およびIIb族の少なくとも1種の元素を有する液に0℃以上60℃以下で浸漬する浸漬工程、を少なくとも有する。【選択図】図1
摘要翻译：要解决的问题：提供一种具有高转换效率的光电转换元件的制造方法。解决方案：一种光电转换元件的制造方法，包括在第一电极上形成光电转换层前体形成工序，至少一种化合物半导体中的任何一种黄铜矿化合物，稳定化合物和凯氏铸铁化合物。在光电转换层前体形成工序中得到的光电转换前体中，第一电极侧的化合物半导体为非晶态化合物半导体，第一电极侧的化合物半导体的平均结晶粒径大于化合物半导体在与第一电极相对的一侧上。光电转换元件还包括在光电转换层前体形成工艺之后浸渍的浸渍工艺，在具有在组IIa和组IIb之间的至少一个元素的流体中形成的第一电极上的光电转换前体处于不低于0℃且不超过60℃。

2. 发明专利

JP2007311493A Photodetector 有权
标题翻译：光电探测器
公开(公告)号：JP2007311493A
公开(公告)日：2007-11-29
申请号：JP2006138023
申请日：2006-05-17
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , SHIMIZU TATSUO , HANEDA SHIGERU
IPC分类号： H01L31/10 , H01L27/146 , H01L31/04
CPC分类号： H01L31/103 , H01L27/14609 , H01L27/14643 , H01L27/14806 , H01L31/028 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a silicon photodetector having both excellent sensitivity and speed of response.
SOLUTION: A photoelectric conversion layer contains a parent-body semiconductor mainly comprising silicon atoms, an n-type dopant D replaced with silicon atoms at a lattice-point site and a different kind of atoms Z inserted into an interstitial site most adjacent to the n-type dopant D. The photoelectric conversion layer forms an electronic configuration in a closed-cell structure by a charge compensation with the n-type dopant D in the different kind of atoms Z. The photodetector has such a photoelectric conversion layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的灵敏度和响应速度的硅光电检测器。解决方案：光电转换层包含主要包含硅原子的母体半导体，在晶格点位置被硅原子取代的n型掺杂剂D和插入最邻近的间隙位置的不同种类的原子Z 到n型掺杂剂D.光电转换层通过与不同种类的原子Z中的n型掺杂剂D的电荷补偿在闭孔结构中形成电子结构。光电检测器具有这样的光电转换层。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005197317A Solid-state lighting element 审中-公开
标题翻译：固态照明元件
公开(公告)号：JP2005197317A
公开(公告)日：2005-07-21
申请号：JP2003435838
申请日：2003-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , YAMAMOTO MASAHIRO , HIRAOKA TOSHIRO
IPC分类号： H01L33/32 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a solid-state lighting element improved in light-extraction efficiency and power conversion efficiency.
SOLUTION: The solid-state lighting element has an optical semiconductor element 11 and a medium 15 covering the outgoing surface of a light from the optical semiconductor element 11. Nano particles 21 composed of a material having a refractive index in the wavelength region of the light under a bulk state higher than that on the outgoing surface of the optical semiconductor element 11 are contained in the medium 15.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供提高光提取效率和功率转换效率的固态照明元件。解决方案：固态照明元件具有光学半导体元件11和覆盖来自光学半导体元件11的光的出射表面的介质15.纳米颗粒21由在波长区域中具有折射率的材料构成在光学半导体元件11的出射表面上的散射状态下的光的含量被包含在介质15中。（C）2005，JPO＆NCIPI

4. 发明专利

JP2014192257A Solar battery 有权
标题翻译：太阳能电池
公开(公告)号：JP2014192257A
公开(公告)日：2014-10-06
申请号：JP2013064969
申请日：2013-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , NAKAGAWA NAOYUKI , SHIBAZAKI SOICHIRO , HIRAGA HIROKI , YAMAZAKI MUTSUKI , SAKURADA SHINYA , INABA MICHIHIKO
IPC分类号： H01L31/06
CPC分类号： H01L31/078 , H01L31/068 , H01L31/0749 , H01L31/076 , Y02E10/541 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a solar battery of tandem type in which both high efficiency and low cost are realized.SOLUTION: A solar battery includes a first solar battery cell which contains a Si layer as a light absorbing layer, and a second solar battery cell which contains group I-III-VIcompound layer or group I-II-IV-VIcompound layer as a light absorbing layer, laminated each other. Between the first and second solar battery cells, there are provided an n+ type Si layer and an intermediate layer which is at least one kind selected from among p+ type Si layer, metal compound layer, and graphene layer (where, metal compound layer is represented by MX, M is an element of at least one kind selected from among Nb, Mo, Pd, Ta, W and Pt, and X is an element of at least one kind selected from among S, Se, and Te).
摘要翻译：要解决的问题：提供实现高效率和低成本的串联型太阳能电池。解决方案：太阳能电池包括第一太阳能电池单元，其包含Si层作为光吸收层，第二太阳能电池含有I-III-VI族化合物组的I-II-IV-VI族化合物层或作为光吸收层的I-II-IV-VI族化合物层的电池。在第一和第二太阳能电池单元之间，提供n +型Si层和中间层，其为从p +型Si层，金属化合物层和石墨烯层（其中金属化合物层被表示为）中的至少一种通过MX，M是选自Nb，Mo，Pd，Ta，W和Pt中的至少一种的元素，X是选自S，Se和Te中的至少一种的元素）。

5. 发明专利

JP2014067861A Photoelectric conversion element and solar cell, and method for manufacturing them 有权
标题翻译：光电转换元件和太阳能电池及其制造方法
公开(公告)号：JP2014067861A
公开(公告)日：2014-04-17
申请号：JP2012212257
申请日：2012-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAGAWA NAOYUKI , HIRAGA HIROKI , SHIBAZAKI SOICHIRO , YAMAZAKI MUTSUKI , YAMAMOTO KAZUE , SAKURADA SHINYA , INABA MICHIHIKO
IPC分类号： H01L31/06
CPC分类号： Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having a high efficiency, and a solar cell.SOLUTION: A photoelectric conversion element includes: a p-type light absorption layer that is a compound semiconductor layer having a band gap of 1.28 eV or more and 1.68 eV or less and represented by (CuAg)(InGa)Se, where x satisfies 0≤x≤1 and y satisfies 0≤y≤1, while the ratio of (maximum value/minimum value) of Ga/(In+Ga) molar ratios in the thickness direction of the compound semiconductor layer is 1.0 or more and 1.5 or less; an n-type semiconductor layer forming a pn-junction with the p-type light absorption layer; and a transparent electrode 5 disposed on the n-type semiconductor layer.
摘要翻译：要解决的问题：提供一种高效率的光电转换元件和太阳能电池。解决方案：光电转换元件包括：p型光吸收层，其是带隙为1.28eV的化合物半导体层或（CuAg）（InGa）Se表示，其中x满足0≤x≤1且y满足0≤y≤1，而Ga（（In））的（最大值/最小值） + Ga）化合物半导体层的厚度方向的摩尔比为1.0以上且1.5以下; 与p型光吸收层形成pn结的n型半导体层; 以及设置在n型半导体层上的透明电极5。

6. 发明专利

JP2009054873A Light emitting element 审中-公开
标题翻译：发光元件
公开(公告)号：JP2009054873A
公开(公告)日：2009-03-12
申请号：JP2007221545
申请日：2007-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , SHIMIZU TATSUO
IPC分类号： H01S5/34 , H01L33/16 , H01L33/34
CPC分类号： H01L33/343
摘要： PROBLEM TO BE SOLVED: To provide a practical light emitting element using an indirect semiconductor which is inherently nonluminous. SOLUTION: The light emitting element includes at least any of S, Se, Cu and Ag, and is equipped with an active layer composed of a mother body semiconductor device having a tetrahedral bond structure, an n electrode and a p electrode which turn on a current to the active layer, and has an n layer provided between the active layer and the n electrode contacting the active layer, and a p layer provided between the active layer and the p electrode contacting the active layer, wherein the n layer, the active layer, and the p layer are arranged to be in-plane, the thickness of the active layer is 5 nm or less. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供使用本来是非发光的间接半导体的实用发光元件。解决方案：发光元件包括S，Se，Cu和Ag中的至少一种，并且配备有由具有四面体结合结构的母体半导体器件，n电极和ap电极构成的有源层并且在有源层和与活性层接触的n电极之间具有n层，以及设置在与活性层接触的有源层和p电极之间的p层，其中n层，有源层和p层布置成面内，有源层的厚度为5nm以下。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008283219A Optical device 有权
标题翻译：光学装置
公开(公告)号：JP2008283219A
公开(公告)日：2008-11-20
申请号：JP2008208973
申请日：2008-08-14
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , SHIMIZU TATSUO
IPC分类号： H01L31/0248 , C23C16/28 , C30B29/08
摘要： PROBLEM TO BE SOLVED: To solve the problem that there has not been practical application of long-wavelength of optical absorption or optical absorption in a long-wave length range when germanium is used for an optical device on the long-wavelength range to be mounted on an optical/electric large-scale integration (LSI) by using a semiconductor process. SOLUTION: The optical device includes a photoelectric conversion layer using a tetrahedrally-bonded semiconductor containing an atom of germanium as a major ingredient, an n-type dopant D or a p-type dopant A substituted for the atom of germanium at a lattice point site of the tetrahedrally-bonded semiconductor constituting the photoelectric conversion layer and a different kind atom Z inserted into an interstitial site closest to the dopant and the different kind atom Z has electron arrangement of closed shell structure by charge compensation with the dopant. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决在长波长范围内的光学元件使用锗时，在长波长范围内没有实际应用长波长的光吸收或光吸收的问题通过使用半导体工艺安装在光/电大规模集成（LSI）上。解决方案：光学器件包括使用包含锗原子作为主要成分的四面体键合半导体的光电转换层，取代锗原子的n型掺杂剂D或p型掺杂剂A 构成光电转换层的四面体键合半导体的晶格点位置和插入到最接近掺杂剂的间隙位置的不同种类的原子Z，并且不同种类的原子Z具有通过与掺杂剂的电荷补偿的封闭壳结构的电子排列。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008091572A Optical device 有权
标题翻译：光学装置
公开(公告)号：JP2008091572A
公开(公告)日：2008-04-17
申请号：JP2006270003
申请日：2006-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO KAZUE , SHIMIZU TATSUO
IPC分类号： H01L31/10
CPC分类号： H01L31/036 , B82Y20/00 , H01L31/0264 , H01L31/035236
摘要： PROBLEM TO BE SOLVED: To put in practice germanium since the elongation of wavelength in absorption of germanium or the absorption of germanium in a long wavelength region is not put in practice when the same is used for long wavelength region optical device mounted on photoelectric mixed LSI (large scale integrated circuit) employing semiconductor process. SOLUTION: The optical device is a semiconductor which has germanium atom as its principal constituent and has a tetrahedron bonding while a substrate lattice constant is smaller than that of germanium and the substrate plane direction is ä111} plane wherein the optical device employs a photoelectric conversion layer whose semiconductor lattice is extended in the axial direction orthogonal to the substrate plane. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：由于锗的吸收波长的延长或锗在长波长区域的吸收的延长，实际上并不实际使用锗，因为长时间安装在长波长区域的光学器件上使用锗采用半导体工艺的光电混合LSI（大规模集成电路）。解决方案：光学器件是具有锗原子作为其主要成分并具有四面体键合的半导体，而衬底晶格常数小于锗的晶格常数，并且衬底平面方向为ä111}平面，其中光学器件采用半导体晶格在与衬底平面正交的<111>轴向延伸的光电转换层。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2005209396A Field emission type electron source 有权
标题翻译：场发射型电子源
公开(公告)号：JP2005209396A
公开(公告)日：2005-08-04
申请号：JP2004012043
申请日：2004-01-20
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASAWA TSURUMI , SATO TOSHIE , YAMAMOTO KAZUE , MIZUSHIMA KOICHI
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source with large area, capable of stably emitting electron with high efficiency at low cost. SOLUTION: The field emission type electron source comprises a lower electrode, a multiple tunnel conductive layer including conductive fine particles and inter-particle insulation bodies intercalated between the conductive fine particles, and a surface electrode formed on the multiple tunnel conductive layer, and emits electron by the voltage impressed between the surface electrode as a positive electrode and the lower electrode. The inter-particle insulation body contains a cross-linked polymer having borazine skeleton bonded with the conductive fine particle. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2003338379A Manufacturing method for ink for organic el positive hole injection layer 有权
标题翻译：用于有机EL活性孔注射层的制造方法
公开(公告)号：JP2003338379A
公开(公告)日：2003-11-28
申请号：JP2002146561
申请日：2002-05-21
申请人： Toshiba Corp , 株式会社東芝
发明人： IWANAGA HIRONORI , KIHARA NAOKO , SAKAI KIMITO , NAITO KATSUYUKI , NAKAI YUTAKA , ENOMOTO SHINTARO , YAMAMOTO KAZUE , MORI YASUSHI
IPC分类号： H01L51/50 , C09D11/00 , H05B33/10 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for ink for an organic EL positive hole injection layer enabling the manufacture of an organic EL display element having excellent positive hole injection property and a long service life and having excellent application property by an ink jet method. SOLUTION: This manufacturing method comprises a process in which an associated body of donor molecule containing polythiophen and its derivative and acceptor molecule containing polystyrene sulfonate and its derivative dialyzes dispersion liquid dispersed in water and a process in which high polymer composed of the same component as the acceptor molecule and having an average molecular weight of 50,000 or more and 1,000,000 or less is added to the dispersion liquid after dialysis at a concentration of 1 to 50 wt.%. COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题：提供一种有机EL空穴注入层用油墨的制造方法，其能够制造具有优异的空穴注入性和长使用寿命的有机EL显示元件，并且具有优异的涂布性喷墨法。解决方案：该制造方法包括一种方法，其中含有聚噻吩的供体分子及其衍生物和含有聚苯乙烯磺酸盐的受体分子及其衍生物的分散体透析分散在水中的分散液的方法以及由其组成的高分子的方法成分为受体分子，平均分子量为50,000以上且1,000,000以下，透析后的分散液的浓度为1〜50重量％。版权所有（C）2004，JPO

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