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1. 发明专利

JP2009140944A Method of etching oxide film 审中-公开
标题翻译：蚀刻氧化膜的方法
公开(公告)号：JP2009140944A
公开(公告)日：2009-06-25
申请号：JP2007312301
申请日：2007-12-03
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIMOTO YOSHIO , SHIBA KATSUIKU , KATADA TOMIO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To remove an etching product adsorbed onto a semiconductor substrate substantially thoroughly in an interface cleaning process for removing an oxide film on the semiconductor substrate by dry etching.
SOLUTION: A method of etching an oxide film includes a dry etching step of forming an etching product consisting of an ammonium silicofluoride salt through reaction with an oxide film formed on a semiconductor substrate 1 by using one or a plurality of kinds of gas selected from NF
3 and H
2 , N
2 , HF and NH
3 , an annealing step of sublimating the etching product by heating the semiconductor substrate at a temperature of ≥100°C after execution of the etching step, and a step of removing the etching product remaining on the semiconductor substrate by introducing hydrogen radicals after the annealing step.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在通过干蚀刻去除半导体衬底上的氧化物膜的界面清洁工艺中，基本上彻底地去除吸附在半导体衬底上的蚀刻产物。解决方案：蚀刻氧化膜的方法包括：干蚀刻步骤，通过使用一种或多种气体，通过与形成在半导体衬底1上的氧化物膜反应形成由氟化铵铵组成的蚀刻产物选自NF＆lt; SB＆gt;和＆lt; SB＆gt; 2＆lt; SB＆gt;，N＆lt; SB＆gt;，＆lt; SB＆gt;，HF和NH 3 SB 3;退火步骤通过在蚀刻步骤执行之后在≥100℃的温度下加热半导体衬底来蚀刻产品，以及通过在退火步骤之后引入氢自由基去除残留在半导体衬底上的蚀刻产物的步骤。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2004273835A Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：JP2004273835A
公开(公告)日：2004-09-30
申请号：JP2003063733
申请日：2003-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUHARA SEITA , TSUNODA HIROAKI , SHIBA KATSUIKU
IPC分类号： H01L21/283 , H01L21/316 , H01L21/336 , H01L21/768 , H01L21/8246 , H01L21/8247 , H01L23/522 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L43/08
CPC分类号： H01L21/76801 , H01L29/6684
摘要： PROBLEM TO BE SOLVED: To suppress fluctuation of a threshold voltage which operates a transistor.
SOLUTION: This method of manufacturing a semiconductor device includes a process of forming a wiring layer 10, and a process of forming a first insulating film 20 on the wiring layer 10 under the condition that hydrogen in the state of plasma is not more than 1% of all the gas components.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2005340446A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005340446A
公开(公告)日：2005-12-08
申请号：JP2004156214
申请日：2004-05-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIBA KATSUIKU , FUKUHARA SEITA
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8238 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/76229 , H01L27/115
摘要： PROBLEM TO BE SOLVED: To prevent a silicon substrate from being oxidized when a polysilazane coating film is oxidized, and to prevent an SiO
2 film from being released when the oxidization is performed.
SOLUTION: A method of manufacturing a semiconductor device comprises steps of depositing an SiO
2 film 3 on a silicon substrate 1, depositing an Si rich film 14 on the SiO
2 film 3, applying a polysilazane coating liquid to the Si rich film 14, and forming an SiO
2 film by oxidizing a polysilazane coating film 4. In this manufacturing method, when oxidizing the polysilazane coating film 4, H
2 O reaches the Si containing film 14, O in H
2 O reacts with Si in the Si containing film 14 to form SiO
2 , and O is consumed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止当聚硅氮烷涂层被氧化时硅衬底被氧化，并且当进行氧化时，防止SiO 2 膜被释放。解决方案：一种制造半导体器件的方法包括以下步骤：在硅衬底1上沉积SiO 2 SB 3膜;将富Si薄膜14沉积在SiO 2 SB >膜3，通过氧化聚硅氮烷涂膜4将聚硅氮烷涂覆液体施加到富Si薄膜14上，并形成SiO 2 膜。在该制造方法中，当氧化聚硅氮烷涂膜4时， H 2 O到达含Si膜14时，H 2 O中的O与含硅膜14中的Si反应，形成SiO 2 并且O被消耗。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2003297956A Semiconductor storage device and its manufacturing method 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：JP2003297956A
公开(公告)日：2003-10-17
申请号：JP2002102818
申请日：2002-04-04
申请人： Toshiba Corp , 株式会社東芝
发明人： TSUNODA HIROAKI , FUKUHARA SEITA , KOBAYASHI HIDEYUKI , SHIBA KATSUIKU , HIMENO YOSHIAKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can improve data holding characteristic and its manufacturing method.
SOLUTION: The device has a nitrogen added silicon oxide film; an Al added silicon oxide film; an Al oxide; a Ti added silicon oxide film; a silicon oxide film whereto two kinds among three kinds of nitrogen, Al and Ti are added; Ti oxide; oxide of Ti and Al; a single metallic layer consisting of any one of a metallic group of Ti, Ni, Co, Zr, Cu, Pt, V, Mg, U, Nd, La, Sc; a layer consisting of a binary or more alloy wherein two or more metals of the metallic group are incorporated at least 50% of an entire; and a layer (such as an Al
2 O
3 film 10) comprising at least one or more of a group consisting of a layer formed of nitride of the alloy or a layer formed of hydride of the alloy, on an upper layer of a memory element.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种能够提高数据保持特性的非易失性半导体存储装置及其制造方法。
解决方案：该装置具有氮添加氧化硅膜; Al添加氧化硅膜; 氧化铝; Ti添加氧化硅膜; 添加三种氮，Al和Ti中的两种氧化硅膜; 氧化钛 Ti和Al的氧化物; 由Ti，Ni，Co，Zr，Cu，Pt，V，Mg，U，Nd，La，Sc中的任一种金属组成的单一金属层; 由二元或更多合金组成的层，其中金属组中的两种或更多种金属掺入至少全部的50％; 和包含至少一种或多种由合金的氮化物形成的层或层的层（例如Al 2 SB 3 O 3 SB 3膜）由合金的氢化物形成在存储元件的上层上。版权所有（C）2004，JPO

5. 发明专利

JP2009248231A Polishing device 审中-公开
标题翻译：抛光装置
公开(公告)号：JP2009248231A
公开(公告)日：2009-10-29
申请号：JP2008097904
申请日：2008-04-04
申请人： Toshiba Corp , 株式会社東芝
发明人： ADACHI MASAYOSHI , TAKAYASU ATSUSHI , SHIBA KATSUIKU
IPC分类号： B24B37/32 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce the wear of the retainer ring of a polishing device. SOLUTION: The retainer ring 11 comprises a retainer ring external section 22, a retainer ring internal section 24, a connection part 23, and balls 21. The retainer ring 11 is brought into point contact with a polishing pad 3 through the balls 21. A fitting hole 31 and a gap 32 are formed in the internal part 24. The retainer ring is fixed by an upper plate 13, and the left end thereof is brought into contact with a wafer 5 and a membrane 12. The internal part 24 is separated from the polishing pad 3, and holds the wafer 5. A fitting hole 31 and a gap 25 are formed in the external part 22. The upper part of the retainer ring is brought into contact with the upper plate 13, and the left end thereof is brought into contact with the internal part 22. The external part 22 is separated from the polishing pad 3, and formed integrally with the internal part 24 by fitting the connection part 23 into the fitting hole 31. The balls 21 are harder than the polishing pad 3, and assembled in the gap 25 and the gap 32. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：减少抛光装置的保持环的磨损。解决方案：保持环11包括保持环外部部分22，保持环内部部分24，连接部分23和球21.保持环11通过球体与抛光垫3进行点接触在内部部件24中形成安装孔31和间隙32.保持环由上板13固定，其左端与晶片5和膜12接触。内部部件 24与抛光垫3分离并保持晶片5.在外部22中形成有安装孔31和间隙25.保持环的上部与上板13接触，并且使其左端与内部部件22接触。外部部件22与抛光垫3分离，并通过将连接部件23装配到装配孔31中而与内部部件24一体地形成。滚珠21更硬而不是抛光垫3，并组装在g中 ap 25和差距32.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008311310A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2008311310A
公开(公告)日：2008-12-25
申请号：JP2007155582
申请日：2007-06-12
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI , FUKUHARA SEITA , SHIBA KATSUIKU
IPC分类号： H01L21/205 , C23C16/44 , C23C16/507 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of stably being operated for a long period of time. SOLUTION: The semiconductor manufacturing apparatus includes a container 11 whose interior can be depressurized, a susceptor 13 which supports a work substrate 12 housed in the container 11, copper tube coils 14 arranged along the outer wall of the container 11, a power source 15 which supplies ac power to the coils 14 to generate plasma in the container 11, a circulating water system 16 which supplies a cooling fluid to one end 14a of each coil 14 and discharges the cooling fluid from the other end 14b of the coil 14 to circulate the cooling fluid through the copper tube of the coil 14, and a coat 17 which is formed on the interior wall of the copper tube of each coil 14 to prevent the corrosion of the coil 14 by the cooling fluid. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够长时间稳定地操作的半导体制造装置。解决方案：半导体制造装置包括其内部可以减压的容器11，支撑容纳在容器11中的工作基板12的基座13，沿着容器11的外壁布置的铜管线圈14，源15，其向线圈14提供交流电力以在容器11中产生等离子体;循环水系统16，其将冷却流体供应到每个线圈14的一端14a，并且从线圈14的另一端14b排出冷却流体使冷却流体循环通过线圈14的铜管，以及形成在每个线圈14的铜管的内壁上的涂层17，以防止冷却流体对线圈14的腐蚀。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006278966A Semiconductor manufacturing system 审中-公开
标题翻译：半导体制造系统
公开(公告)号：JP2006278966A
公开(公告)日：2006-10-12
申请号：JP2005099581
申请日：2005-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIBA KATSUIKU , FUKUHARA SEITA
IPC分类号： H01L21/31
CPC分类号： B05C5/001 , B05C11/08 , G03F7/162 , H01L21/67028 , H01L21/67109 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To keep safety even if piping, through which chemical flows for insulating film formation, is damaged under a certain impact.
SOLUTION: In this constitution, temperature adjustment liquid X3 having no reactive characteristics chemically with insulating film formation chemical X can be provided in a second liquid path A2 separated by a main piping unit B1 just around a central flow path A1. The insulating film formation chemical X1 is made of liquid, which is not reactive chemically with the temperature adjustment liquid X3. In this way, even if the main piping unit B1 is damaged, the safety can be maintained without chemical reaction.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了保持安全，即使在某种影响下，通过化学物质流过绝缘膜形成的管道被损坏。解决方案：在这种结构中，可以在由主管道单元B1围绕中心流动路径A1分开的第二液体路径A2中提供具有与绝缘膜形成化学物质X化学反应特性的温度调节液体X3。绝缘膜形成化学品X1由液体制成，其不与温度调节液体X3化学反应。这样，即使主管道单元B1损坏，也可以保持安全性而没有化学反应。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2012164813A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012164813A
公开(公告)日：2012-08-30
申请号：JP2011024029
申请日：2011-02-07
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMIYAMA MIO , TAKAYASU ATSUSHI , SHIBA KATSUIKU , SHIGETA ATSUSHI
IPC分类号： H01L21/304
CPC分类号： H01L21/31053 , H01L21/3081 , H01L21/76224 , H01L29/7843
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can prevent propagation of cracks into a film under a stopper film in polishing films on a substrate by the CMP method.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a plurality of films on a substrate in the same chamber without taking out the substrate from the chamber; forming a film to be polished on the plurality of films; and polishing the film to be polished by the chemical mechanical polishing (CMP) method using a film on a surface side among the plurality of films as a stopper.
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件可以通过CMP方法在衬底上的抛光膜中防止裂纹扩散到阻挡膜下的膜中。解决方案：制造半导体器件的方法包括以下步骤：在相同的腔室中的衬底上形成多个膜而不从腔室中取出衬底; 在所述多个膜上形成待研磨的膜; 并且通过化学机械抛光（CMP）方法在多个膜中的表面侧上的膜作为止动器来研磨待抛光的膜。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2006269766A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006269766A
公开(公告)日：2006-10-05
申请号：JP2005085990
申请日：2005-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA SHUICHI , SHIBA KATSUIKU
IPC分类号： H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a void-free film in a recess such as a through-hole.
SOLUTION: In an insulation layer having the through-hole formed on a semiconductor substrate and a conductive layer formed inside the through-hole, an embedded insulation film embedded inside the conductive layer is formed, and the void-free film is provided.
COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2005310819A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2005310819A
公开(公告)日：2005-11-04
申请号：JP2004121668
申请日：2004-04-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI , FUKUHARA SEITA , SHIBA KATSUIKU
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To remove not only deposits formed in a film formation chamber but also deposits formed in an exhaust system by cleaning gas changed into plasma in a remote chamber.
SOLUTION: A semiconductor device has the film formation chamber 11, the remote chamber 15 for generating cleaning gas for cleaning the film formation chamber 11 by the excitation of plasma, and the exhaust system for exhausting the chambers. A conductance control valve 18 is provided between the film formation chamber 11 and the remote chamber 15, thus stabilizing the degree of vacuum in the remote chamber 15.
COPYRIGHT: (C)2006,JPO&NCIPI

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