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1. 发明专利

JP2019091839A 面発光量子カスケードレーザ审中-公开
公开(公告)号：JP2019091839A
公开(公告)日：2019-06-13
申请号：JP2017220739
申请日：2017-11-16
申请人： TOSHIBA CORP
发明人： SAITO SHINJI , TAKASE TOMOHIRO , HASHIMOTO REI , SUMINO TSUTOMU
IPC分类号： H01S5/183 , H01S5/14 , H01S5/34 , H01S5/42
摘要：【課題】高出力時に光学特性が改善可能な面発光量子カスケードレーザを提供する。【解決手段】面発光量子カスケードレーザは、半導体積層体10と、上部電極50と、下部電極52と、を有する。半導体積層体は、サブバンド間遷移を生じる量子井戸層を有しかつ赤外レーザ光を放出する活性層20と、活性層の上に設けられかつピット部が直方格子を構成するフォトニック結晶層を有する第1半導体層30と、活性層の下方に設けられた第2半導体層39と、を有する。下部電極は、第2半導体層の下面のうち、上部電極と重なる領域に設けられる。平面視にて、半導体積層体は、フォトニック結晶層を含む面発光領域70と、上部電極が設けられかつ面発光領域を取り囲む電流注入領域72と、を有する。活性層は、サブバンド間遷移を生じ、二次元回折格子により光共振を生じつつ面発光領域の垂直方向へ赤外レーザ光を放出可能とする。【選択図】図1

2. 发明专利

JP2004304147A Heating apparatus and method, and treatment substrate 审中-公开
公开(公告)号：JP2004304147A
公开(公告)日：2004-10-28
申请号：JP2003317262
申请日：2003-09-09
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUMIZU HIROYUKI , SUMINO TSUTOMU , SAITO SHUICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a heating apparatus which performs an aftertreatment such as an etching well by means of heating an object to be heated with a complicated temperature distribution pattern using a simpler structure.
SOLUTION: The device comprises a infrared lamp 41 which irradiates a substrate for treatment W with a light beam to heat the substrate W and a mask M placed between the infrared lamp 41 and the substrate W, made of copper which reflects wavelength of irradiated light with apertures Ma of prescribed pattern.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2002231782A METHOD FOR TRANSFERRING SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSOR 失效
公开(公告)号：JP2002231782A
公开(公告)日：2002-08-16
申请号：JP2001025197
申请日：2001-02-01
申请人： TOSHIBA CORP
发明人： SUMINO TSUTOMU
IPC分类号： B65G49/00 , F24F7/06 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a method in which power consumption in high cleanliness is reduced and the running cost is further decreased, in processes of transferring and manufacturing a semiconductor wafer by use of a locally clean environment (mini-environment) system. SOLUTION: A fan 21 is in standby operation at normal time in a mini- environment, and only when a semiconductor wafer C is taken out from a pod P, the fan is rotated at a high speed.

4. 发明专利

JPH11283933A LASER BEAM IRRADIATING DEVICE, MANUFACTURE OF NON-SINGLE CRYSTAL SEMICONDUCTOR FILM, AND MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11283933A
公开(公告)日：1999-10-15
申请号：JP2133599
申请日：1999-01-29
申请人： TOSHIBA CORP
发明人： MATSUNAKA SHIGEKI , SUMINO TSUTOMU , FUJIWARA JUNJI
IPC分类号： H01L21/20 , G02F1/136 , G02F1/1368 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a laser beam irradiating device which is constituted to set the intensity of laser beam irradiating an object to be treated with high accuracy. SOLUTION: A laser beam irradiating device with which an object 19 to be treated is irradiated with the laser beam, by controlling the intensity of the laser beam is provided with a laser oscillator 1, homogenizers 7 and 11 which make the intensity distribution of the laser beam outputted from the oscillator 1 uniform, a condenser lens 15 which converges the laser beam shaped through a slit 16 that shapes the laser beam, the intensity of which is made uniform by means of the homogenizers 7 and 11 into the form of a prescribed beam by removing the part of the laser beam and projects the converged shaped laser beam upon the object 19, a detector 23 which detects the intensity of the laser beam passed through the slit 16 and made incident to the detector 23, and a controller 25 which controls the intensity of the laser beam, based on the detecting signal of the detector 23.

5. 发明专利

JPH0443687A GAS LASER APPARATUS 失效
公开(公告)号：JPH0443687A
公开(公告)日：1992-02-13
申请号：JP14975390
申请日：1990-06-11
申请人： TOSHIBA CORP
发明人： UCHIDA YUTAKA , SUMINO TSUTOMU , SATO SABURO
IPC分类号： H01S3/038 , H01S3/097 , H01S3/0977
摘要： PURPOSE:To reduce the contamination and the deterioration of a gas laser medium to a minimum by a method wherein arbitrary sets of gap parts at a plurality of sets of pin electrodes are sealed hermetically by using hermetically sealing members which restrain a sputter generated at each set of pin electrodes. CONSTITUTION:Some gap parts 8 at pin electrodes 6, 7 situated at the outside out of pin electrodes 6, 7 which have been arranged in two rows on both sides of a main electrode are sealed hermetically by hermetically sealing members 10. Gap parts 8 which are required to obtain minimum preliminary ionization in order to stably operate a laser oscillation are excluded from the gap parts 8 which are sealed hermetically by the hermetically sealing members 10.

6. 发明专利

JPH0362580A GAS LASER OSCILLATING EQUIPMENT 失效
公开(公告)号：JPH0362580A
公开(公告)日：1991-03-18
申请号：JP19674189
申请日：1989-07-31
申请人： TOSHIBA CORP
发明人： SUMINO TSUTOMU , GOTO TATSUMI
IPC分类号： H01S3/038 , H01S3/097 , H01S3/0971
摘要： PURPOSE:To increase preliminary ionization capability by arranging a third electrode between a first and a second electrode facing each other, and generating main discharge between the second and the third electrode with charged particles generated by the preliminary ionization between the first and the third electrode. CONSTITUTION:When a switch of a charging and discharging circuit 20 is opened, a charging and discharging capacitor C10 is charged. By closing a switch 21, the charge stored in the capacitor C10 transfers to each of the discharging capacitors CP1, CP2. As the result of the above transfer, corona discharge generates between a lead wire 13 and a glass tube 14. By this corona discharge, trigger discharge is induced in a discharging space A between the first electrode 10 and the third electrode 12, and charged particles are supplied to a discharging space B. Since, in the above state, a high voltage is applied between the second electrode 11 and the third electrode 12 from a high voltage power supply H.V, gas laser medium between the electrodes 11 and 12 is excited, so that main discharge generates between the electrode 11 and the electrode 12. By this constitution, preliminary ionization capability is increased, and the life of the glass tube 14 is lengthened.

7. 发明专利

JPH02292878A GAS LASER OSCILLATION DEVICE 失效
公开(公告)号：JPH02292878A
公开(公告)日：1990-12-04
申请号：JP11376589
申请日：1989-05-08
申请人： TOSHIBA CORP
发明人： SUMINO TSUTOMU , UCHIDA YUTAKA
IPC分类号： G01R31/24 , H01S3/00
摘要： PURPOSE:To obtain a gas laser oscillation device which is provided with a pair of plate-like primary discharge electrodes and a means capable of surely detecting an arc discharge occurring in the device by a method wherein a detecting means which detects the discharge sound of the primary electrodes, a frequency analyzer, and a discriminating section which discriminates a discharge state by comparing the waveform of the discharge sound with a reference waveform are provided. CONSTITUTION:In a gas laser oscillation device provided with, at least, a pair of primary electrodes 4 and 5 which are provided in a hermetically sealed vessel 1 facing each other and excite gas laser medium filled in the hermetically sealed vessel 1, a detecting means 11 which detects the discharge sound of the electrodes 4 and 5, a frequency analyzer 12 which analyzes the frequency of the discharge sound detected by the detecting means 11, and a discriminating section 13 which discriminates a discharge state by comparing the waveform of the discharge sound obtained by the frequency analyzer 12 with a reference waveform are provided. For instance, a detecting means which detects a discharge state picking a discharge sound is composed of a microphone 11, the frequency analyzer 12, and the discriminating section 13 which discriminates a discharge state comparing the waveform signal transmitted from the frequency analyzer 12 with the waveform of frequency at the start of an arc as a reference signal and transmits a control signal to a control section 10.

8. 发明专利

JPH02218186A LASER OSCILLATION DEVICE 失效
公开(公告)号：JPH02218186A
公开(公告)日：1990-08-30
申请号：JP3823789
申请日：1989-02-20
申请人： TOSHIBA CORP
发明人： UCHIDA YUTAKA , SUMINO TSUTOMU , SATO SABURO
IPC分类号： H01S3/08 , H01S3/105 , H01S3/1055
摘要： PURPOSE:To make it possible to select a prescribed wavelength by a simple operation by a method wherein a high-reflecting mirror is constituted of a first high-reflecting surface part, which faces a diffraction grating in parallel on a resonance axis, and a second high-reflecting surface part to reflect a laser beam, which is diffracted by the diffraction grating and has a prescribed wavelength, to the incident optical path of this laser beam. CONSTITUTION:A high-reflecting mirror 12 faces the surface 13a of a diffraction grating 13 in parallel and is constituted of a first high-reflecting surface part 12a provided on the axial line of a gas laser tube 10 and a second high-reflecting surface part 12b provided in such a way as to be able to adjust freely its angle. As this part 12b reflects a laser beam, which is diffracted by the grating 13 and has a prescribed wavelength, to the diffracting optical path of this laser beam, an optical axis set on the part 12a at the time of optical axis adjustment can be preserved. Thereby, the grating 13 can be installed intact on the optical axis subjected to optical axis adjustment by the laser beam and a complicated optical axis adjustment operation in a laser oscillation of a selection of wavelength can be dissolved.

9. 发明专利

JP2013191743A Laser annealing method, laser annealing device, and manufacturing method for thin-film transistor 有权
标题翻译：激光退火方法，激光退火装置和薄膜晶体管的制造方法
公开(公告)号：JP2013191743A
公开(公告)日：2013-09-26
申请号：JP2012057269
申请日：2012-03-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMINO TSUTOMU , TOGAWA RYUICHI , ITO HIROSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
CPC分类号： H01L21/2636 , B23K26/0066 , B23K26/0738 , B23K26/083 , C30B1/02 , C30B1/023 , C30B28/08 , C30B29/06 , C30B35/00 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a laser annealing method that predicts process results from an intensity distribution of a laser beam and can detect a state having a high probability that grains outside a range of a desired grain size are generated, and further to provide a laser annealing device and a manufacturing method for a thin-film transistor.SOLUTION: A laser annealing method includes the steps of: detecting an intensity distribution of a laser beam emitted from a laser device and formed as a line beam by a line beam optical system emitted from a laser device; dividing a width of the line beam in a short axis direction in the detected intensity distribution by dividing the width by a number of times of irradiation per one place; and calculating an increased amount of a grain size of an amorphous thin film with respect to energy density corresponding to a peak value of the divided intensity distribution and adding the increased amount by a number of times of pulse irradiation. In a case where the energy density of the laser beam is greater than a threshold value by which the grain size of the amorphous thin film is changed to be decreased, the increased amount added before the energy density is greater than the threshold value is made zero.
摘要翻译：要解决的问题：提供一种激光退火方法，其从激光束的强度分布预测过程结果，并且可以检测产生具有期望晶粒尺寸范围之外的晶粒的可能性高的状态，并且还可以提供激光退火装置和薄膜晶体管的制造方法。解决方案：激光退火方法包括以下步骤：检测从激光装置发射的激光束的强度分布并通过线束光学系统形成为线束从激光装置发射; 通过将宽度除以每一次的照射次数，将检测的强度分布中的线束的宽度沿短轴方向分割; 并计算相对于与分割强度分布的峰值对应的能量密度的非晶薄膜的晶粒尺寸的增加量，并且将增加的量加上脉冲照射次数。在激光束的能量密度大于非晶态薄膜的晶粒尺寸变化的阈值的情况下，在能量密度大于阈值之前添加的增加量为零。

10. 发明专利

JP2005302326A Display device and manufacturing method of display device 审中-公开
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：JP2005302326A
公开(公告)日：2005-10-27
申请号：JP2004112431
申请日：2004-04-06
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMINO TSUTOMU
IPC分类号： H01J9/22 , H01J29/28 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a display device capable of sufficiently improving display brightness, and to provide a manufacturing method of the display device.
SOLUTION: A light shielding layer 11 and a plurality of phosphor layers R, G, B are formed on the inside face of a front substrate of an SED, on top of which an aluminum film 40 having a plurality of vent holes 41 are formed. Gas evaporated during baking of an adhesive of an Al film 40 is released through the plurality of vent holes 41.
COPYRIGHT: (C)2006,JPO&NCIPI

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