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1. 发明专利

JP2008241465A Solid-state imaging device and its driving method 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：JP2008241465A
公开(公告)日：2008-10-09
申请号：JP2007082653
申请日：2007-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： HONDA HIRONAGA , IIDA YOSHINORI , FUJIWARA IKUO , IKEDA SHIGERU
IPC分类号： G01J5/48 , G01J5/20 , H01L27/14 , H01L27/144 , H04N5/33 , H04N5/335 , H04N5/363 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14649 , G01J5/0245 , G01J5/20
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging device for thermally resetting and also removing 1/f noise and a variation in each fixed pattern pixel.
SOLUTION: The solid-state imaging device includes: a pixel 3 thermally isolated from a semiconductor substrate; a constant current source 60; a signal line 6 for transmitting voltage of constant current flowing in the pixel; a thermally conductive switch changing over to either the first state where the pixel is thermally isolated from the semiconductor substrate by the other end coming into contact with the substrate or the second state where the pixel is thermally short-circuited with the semiconductor substrate by the other end coming into contact with the pixel; and a signal detection part serving as the signal detection part 7 capacitively coupled to the signal line, which holds reference voltage (Vcl) depending on a signal (Vsl=Vdd-Vd0+dVsh+dV) on the signal line in the first state, and detects second voltage (Vcl-Vd'-dVsh') with a voltage component (dV') corresponding to incident light subtracted from the reference voltage in the second state.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于热重置并且还去除1 / f噪声的固态成像装置和每个固定图案像素的变化。固体摄像器件包括：与半导体衬底热隔离的像素3; 恒流源60; 用于传输在像素中流动的恒定电流的信号线6; 导热开关切换到第一状态，其中像素与半导体衬底热隔离，另一端与衬底接触或第二状态，其中像素与半导体衬底被另一个热短路结束与像素接触; 以及作为信号检测部分7的信号检测部分，其信号耦合到信号线，该信号检测部分根据在第一状态的信号线上的信号（Vs1 = Vdd-Vd0 + dVsh + dV）保持参考电压（Vcl）并且在第二状态下，从与基准电压相减的入射光的电压成分（dV'）检测出第二电压（Vcl-Vd'-dVsh'）。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008145289A Electromagnetic wave sensor, imaging element, and imaging device 有权
标题翻译：电磁波传感器，成像元件和成像装置
公开(公告)号：JP2008145289A
公开(公告)日：2008-06-26
申请号：JP2006333226
申请日：2006-12-11
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEDA SHIGERU , HONDA HIRONAGA , IIDA YOSHINORI , FUJIWARA IKUO
IPC分类号： G01R19/00 , G01N21/35 , G01N21/3581 , G01R29/08 , H01L27/14 , H04N5/30 , H04N5/335 , H04N5/369 , H04N5/374 , H04N5/378
CPC分类号： H04N5/30 , G01J5/08 , G01J5/0837 , G01J5/20 , G01N21/35 , G01N21/3581 , H04N5/33
摘要： PROBLEM TO BE SOLVED: To provide a simple and inexpensive electromagnetic wave sensor selectively and highly sensitively detecting only the millimetric waves and the submillimetric waves of prescribed frequencies, and to provide an imaging element, and an imaging device. SOLUTION: This electromagnetic wave sensor 100 is formed so that spaces of openings between a plurality of antenna elements 121 are smaller than the wavelengths of infrared light. A capacitor electrically, formed out of openings between the plurality of antenna elements, and an electrical resistance part 111 together form a parallel circuit electrically connected to an antenna part 120. The plurality of antenna elements are formed so that impedance matching is obtained for the antenna part with the parallel circuit as to electromagnetic waves having the prescribed frequencies, while impedance matching is not obtained with respect to the higher harmonics of the electromagnetic waves having the prescribed frequencies. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种简单且便宜的电磁波传感器，其选择性和高度灵敏地仅检测规定频率的毫米波和亚毫米波，并提供成像元件和成像装置。解决方案：该电磁波传感器100形成为使得多个天线元件121之间的开口的空间小于红外光的波长。由多个天线元件之间的开口形成的电容器和电阻部分111一起形成电连接到天线部分120的并联电路。多个天线元件形成为使天线获得阻抗匹配与具有规定频率的电磁波并联电路的一部分，而对于具有规定频率的电磁波的高次谐波没有获得阻抗匹配。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006220555A Non-cooled infrared detector 有权
标题翻译：非冷却红外探测器
公开(公告)号：JP2006220555A
公开(公告)日：2006-08-24
申请号：JP2005034580
申请日：2005-02-10
申请人： Toshiba Corp , 株式会社東芝
发明人： HONDA HIRONAGA , FUJIWARA IKUO , NARUSE YUJIRO
IPC分类号： G01J1/02 , H01L27/14 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To provide a non-cooled infrared detector, having high sensitivity for absorbing infrared rays over a wide region, without lowering the response speed, as much as possible.
SOLUTION: The non-cooled infrared detector comprises a semiconductor substrate, providing a void part on the surface; a wiring part formed on a region surrounding the void part of the semiconductor substrate; a support part, connected to the wiring part and arranged on the void part of the semiconductor substrate in the inside from the wiring part; and a heat-electricity conversion part, supported on the void part of the semiconductor substrate in the inside from the support part, by being connected to the support part and arranged in this order starting from the lower part; a detection cell, including a first reflection layer and a first absorption layer; a second reflecting layer, formed on the detection cell so as to cover the region, other than the region of the first reflecting layer and so as to overhang upward of the support part; and a second absorbing layer formed, by spacing an interval upward of the detection cell and the second reflecting layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种非常冷的红外线检测器，其具有在很宽的区域吸收红外线的高灵敏度，而不会尽可能地降低响应速度。解决方案：非冷却红外检测器包括半导体衬底，在表面上提供空隙部分; 布线部，形成在所述半导体基板的空隙部周围的区域上; 支撑部，其与布线部连接并配置在半导体基板的从配线部的内侧的空隙部分上; 以及热电转换部，通过与所述支撑部连接并从所述下部开始依次配置，从所述支撑部向内侧支撑在所述半导体基板的所述空隙部分上; 检测单元，包括第一反射层和第一吸收层; 第二反射层，形成在所述检测单元上，以覆盖所述区域，而不是所述第一反射层的区域，并且从所述支撑部分向上伸出; 以及通过将检测单元和第二反射层向上间隔开来形成的第二吸收层。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2014187181A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014187181A
公开(公告)日：2014-10-02
申请号：JP2013061045
申请日：2013-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKANO SHINTARO , UEDA TOMOMASA , FUJIWARA IKUO , YAMAGUCHI HAJIME
IPC分类号： H01L29/786 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/532
CPC分类号： H01L29/66969 , H01L27/1225 , H01L29/42364 , H01L29/4908 , H01L29/78648 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a highly-integrated and practical semiconductor device and a manufacturing method of the same.SOLUTION: A semiconductor device 210 comprises a substrate including a function element 155, an underlaying insulation layer 160 provided on the substrate 150 and a thin film transistor 110. The thin film transistor includes a gate electrode 11, first, second and third insulation layers, a semiconductor layer 30 and first and second conductive layers 41, 42. The gate electrode is provided on a part of the underlaying insulation layer. The first insulation layer 21 covers the gate electrode and the underlaying insulation layer and contains silicon and nitrogen. The second insulation layer 22 is provided on the first insulation layer and contains oxygen and at least any of Al, Ti, Ta, Hf and Zr. The semiconductor layer contacts the second insulation layer and is an oxide containing at least any of In, Ga and Zn. The first and second conductive layers contact the semiconductor layer. The third insulation layer 23 covers a part of the semiconductor layer and contains oxygen and at least any of Si, Al, Ti, Ta, Hf and Zr.
摘要翻译：要解决的问题：提供一种高度集成和实用的半导体器件及其制造方法。解决方案：半导体器件210包括：衬底，其包括功能元件155，设置在衬底150上的衬底绝缘层160和薄膜晶体管110.薄膜晶体管包括栅电极11，第一，第二和第三绝缘层，半导体层30和第一和第二导电层41,42。栅电极设置在衬垫绝缘层的一部分上。第一绝缘层21覆盖栅电极和底层绝缘层，并且含有硅和氮。第二绝缘层22设置在第一绝缘层上，并且包含氧和Al，Ti，Ta，Hf和Zr中的至少一种。半导体层接触第二绝缘层，并且是含有In，Ga和Zn中的至少一种的氧化物。第一和第二导电层接触半导体层。第三绝缘层23覆盖半导体层的一部分并且含有氧和Si，Al，Ti，Ta，Hf和Zr中的至少一种。

5. 发明专利

JP2013088192A Infrared solid-state imaging apparatus 审中-公开
标题翻译：红外固态成像装置
公开(公告)号：JP2013088192A
公开(公告)日：2013-05-13
申请号：JP2011227208
申请日：2011-10-14
申请人： Toshiba Corp , 株式会社東芝
发明人： HONDA HIRONAGA , FUNAKI HIDEYUKI , SASAKI KEITA , SUZUKI KAZUHIRO , ATSUTA MASAKI , ISHII KOICHI , FUJIWARA IKUO
IPC分类号： G01J1/02 , G01J1/42 , G01J5/48
CPC分类号： H04N5/33 , H04N5/3597
摘要： PROBLEM TO BE SOLVED: To provide an infrared solid-state imaging apparatus with which an infrared image reducing afterimage can be provided through image processing.SOLUTION: An infrared solid-state imaging apparatus is provided which comprises an infrared detection element section comprised of a thermosensitive pixel, an A/D converter which performs analog-to-digital conversion on an infrared image signal obtained by the infrared detection element section, and a digital signal processor which processes the image signal converted into a digital signal. The digital signal processor stores a captured image value in a frame preceding to the current frame, subtracts an image value multiplying the captured image value of the preceding frame by a preset constant α from 0 to 1 from the captured image value of the current frame and further multiplies the subtracted image value by 1/(1-α), thereby providing an infrared image reducing after image.
摘要翻译：要解决的问题：提供一种可以通过图像处理提供红外图像减少余像的红外固体成像装置。解决方案：提供了一种红外固体成像装置，其包括由热敏像素组成的红外检测元件部分，对通过红外检测获得的红外图像信号执行模数转换的A / D转换器元件部分和处理转换成数字信号的图像信号的数字信号处理器。数字信号处理器将拍摄图像值存储在当前帧之前的帧中，从当前帧的拍摄图像值中减去将前一帧的拍摄图像值乘以预置常数α从0到1的图像值，进一步将减法图像值乘以1 /（1-α），从而在图像之后提供减少的红外图像。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2011215032A Infrared image pickup device and method of manufacturing the same 有权
标题翻译：红外图像拾取装置及其制造方法
公开(公告)号：JP2011215032A
公开(公告)日：2011-10-27
申请号：JP2010084327
申请日：2010-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI KAZUHIRO , FUJIWARA IKUO , SASAKI KEITA , KWON HONAM , YAGI HITOSHI , HONDA HIRONAGA , ISHII KOICHI , OGATA MASAKO , UENO RISAKO , FUNAKI HIDEYUKI
IPC分类号： G01J1/02 , G01J1/42 , H01L35/00 , H04N5/33
CPC分类号： G01J5/02 , G01J5/023 , G01J5/024 , H04N5/33
摘要： PROBLEM TO BE SOLVED: To solve the problems, wherein miniaturization of supporting leg wiring is determined by the accuracy of mask for miniaturization of supporting leg wiring, with respect to the miniaturization of supporting leg wiring, and stable miniaturization with a size of precision which is lower for a mask has been difficult, when reducing the thermal conductance of a supporting leg in prior art.SOLUTION: In miniaturization of the supporting leg wiring, the supporting leg 3 can be reduced in height, by etching only a region equivalent to the supporting leg 3 to a BPSG 10 and a TEOS 11, namely, surrounding interlayer insulation films, and thereby reducing the sectional area of the supporting leg 3, thus providing an infrared image pickup device that has miniaturized supporting leg structure, independently of the size rule determined by a mask.
摘要翻译：要解决的问题为了解决这样的问题，其中支撑腿布线的小型化是通过支撑腿布线的小型化的掩模的精度来确定的，相对于支撑腿布线的小型化，以及精度尺寸的稳定的小型化在现有技术中减少支撑腿的导热性已经困难，因此，在支撑腿布线的小型化中，支撑腿3的高度可以通过仅蚀刻与支撑腿相当的区域而降低腿3到BPSG 10和TEOS 11，即周围的层间绝缘膜，从而减小支撑腿3的截面积，从而提供具有小型化的支腿结构的红外图像拾取装置，独立于所确定的尺寸规则用面具

7. 发明专利

JP2006297502A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006297502A
公开(公告)日：2006-11-02
申请号：JP2005118796
申请日：2005-04-15
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIWARA IKUO , HONDA HIRONAGA , SUZUKI KAZUHIRO , NARUSE YUJIRO
IPC分类号： B81B3/00 , G01J1/02 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has good conformity with an LSI process when MEMS devices and CMOS LSIs are mixedly mounted on the same substrate, and which can suppress the effects of moisture, heat, etc. generated from LSI regions on the MEMS devices.
SOLUTION: The semiconductor device comprises a semiconductor substrate (500) having a first region and a second region neighboring the first region, an integrated circuit (401) to be formed in the second region, a supporting column structure (414) which is formed on the boundary between the first region and the second region so as to have a wall shape and so as to electrically and spatially separate the first region and the second region, thin film structures (419, 427) which are supported by the supporting column structure and are laminated so as to cover the first region and the second region, and an element (424) which comprises a mechanical movable portion to be arranged in a space to be formed on the lower portion of the thin film structure existing in the first region, and which is electrically connected to the integrated circuit.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种当将MEMS器件和CMOS LSI混合安装在同一衬底上时与LSI工艺具有良好一致性的半导体器件，并且可以抑制由...产生的水分，热等的影响 LSI器件上的LSI区域。解决方案：半导体器件包括具有第一区域和与第一区域相邻的第二区域的半导体衬底（500），将形成在第二区域中的集成电路（401），支撑柱结构（414）形成在第一区域和第二区域之间的边界上，以具有壁形状并且在电和空间上分离第一区域和第二区域，薄膜结构（419,427）由支撑体并且层叠以覆盖第一区域和第二区域;以及元件（424），其包括机械可动部分，其布置在待形成的空间中以形成在存在于所述第一区域和第二区域中的薄膜结构的下部第一区域，并且其电连接到集成电路。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005045463A Sound-to-electric transducer element 审中-公开
标题翻译：声电传感器元件
公开(公告)号：JP2005045463A
公开(公告)日：2005-02-17
申请号：JP2003202000
申请日：2003-07-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI KAZUHIRO , FUNAKI HIDEYUKI , SHIGENAKA KEITARO , ONO TOMIO , SAKAI TADASHI , NARUSE YUJIRO , IIDA YOSHINORI , FUJIWARA IKUO
IPC分类号： G01H9/00 , G02B5/18 , H04R23/00
摘要： PROBLEM TO BE SOLVED: To provide a sound-to-electric transducer element of a simple small-area structure which has a wide dynamic range and is usable for various purposes.
SOLUTION: The sound-to-electric transducer element is equipped with a diaphragm 2 which is equipped with a diffraction grating and vibrates with sound pressure, a light source 1 which irradiates the diffraction grating with light, and an optical detector 3 which detects and converts the light diffracted by the diffraction grating into an electric signal. The optical detector 3 uses an image sensor such as a photodiode array. The optical detector 3 detects the diaphragm 2 being displaced in two dimensions by detecting not a difference in light intensity, but a two-dimensional image of a diffraction image. When the light emitted by the light source 1 is incident on the diaphragm 2, the light wave emitted by the light source 1 is reflected by the diaphragm 2 since the reflection diffraction grating is formed on the diaphragm 2 to form the diffraction image on the surface of the photodiode array 3. The optical detector 3 optically detects the diaphragm 2 with the reflection diffraction grating being displaced and further converts the displacement into the electric signal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有宽动态范围并且可用于各种目的的简单小面积结构的声电传感器元件。解决方案：声 - 电换能器元件配备有装备有衍射光栅并且具有声压振动的光阑2，用光照射衍射光栅的光源1和光学检测器3，光检测器3 检测并将由衍射光栅衍射的光转换成电信号。光检测器3使用诸如光电二极管阵列的图像传感器。光检测器3通过检测光强度的差异而不检测衍射图像的二维图像来检测膜片2的二维位移。当由光源1发射的光入射到光阑2上时，光阑1发射的光被光阑2反射，因为在光阑2上形成反射衍射光栅，以在表面上形成衍射图像光检测器3以反射衍射光栅位移光学地检测光阑2，并进一步将位移转换为电信号。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005043148A Infrared sensor and infrared imaging element 有权
标题翻译：红外传感器和红外成像元件
公开(公告)号：JP2005043148A
公开(公告)日：2005-02-17
申请号：JP2003201655
申请日：2003-07-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIGENAKA KEITARO , ONO TOMIO , SUZUKI KAZUHIRO , FUNAKI HIDEYUKI , FUJIWARA IKUO
IPC分类号： G01J1/02 , G01J5/48 , H01L27/14 , H01L31/00 , H04N5/33
摘要： PROBLEM TO BE SOLVED: To provide a thermal infrared sensor and an infrared imaging element with low noise, satisfactory sensor sensitivity, and satisfactory output signal linearity with respect to temperature rise of the sensor.
SOLUTION: This infrared sensor 101 is equipped with a substrate 102, first and second electrodes 107 and 108 provided on the surface of the substrate, a third electrode spaced apart from the first and second electrodes and provided opposite to these electrodes on the substrate, an infrared absorption layer 109 provided on the third electrode 103 for absorbing incident infrared radiation to convert it into heat, and a support leg 104 for supporting the third electrode and the absorption layer in a spaced-apart state from the first and second electrodes.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供相对于传感器的温度上升，具有低噪声，令人满意的传感器灵敏度和令人满意的输出信号线性的热红外传感器和红外成像元件。解决方案：该红外线传感器101配备有衬底102，设置在衬底表面上的第一和第二电极107和108，与第一和第二电极间隔开并且与第二电极相对设置的第三电极衬底，设置在第三电极103上用于吸收入射的红外辐射以将其转换成热的红外线吸收层109，以及用于将第三电极和吸收层以与第一和第二电极隔开的状态支撑的支撑腿104 。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004085331A Infrared imaging device 有权
公开(公告)号：JP2004085331A
公开(公告)日：2004-03-18
申请号：JP2002246006
申请日：2002-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： MASHIO NAOYA , SHIGENAKA KEITARO , FUNAKI HIDEYUKI , IIDA YOSHINORI , FUJIWARA IKUO
IPC分类号： G01J1/02 , G01J1/42 , G01J5/02 , G01J5/12 , G01J5/14 , G01J5/48 , H01L23/00 , H01L27/14 , H01L27/144 , H04N5/33 , H04N5/335
CPC分类号： G01J5/08 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/0245 , G01J5/0853 , G01J5/14 , G01J5/22 , G01J2005/123 , H04N5/33
摘要： PROBLEM TO BE SOLVED: To provide a thermal type infrared imaging device capable of preventing sensitivity decline even if a frame rate is raised and thermal destruction caused by self-heating phenomenon. SOLUTION: In this thermal type infrared imaging device, a detection part X i, j equipped with an infrared absorption layer 42 and a thermoelectric conversion part 41 for converting heat generated in the infrared absorption layer 42 into an electric signal is used as a main part of a pixel, and a plurality of detection parts X i, j are thermally insulated and arrayed on substrates (1, 2, 4). Mechanical switching elements M i, j for diffusing the heat accumulated in the detection parts X i, j into the substrates (1, 2, 4) by thermal short-circuit between the detection parts X i, j and the substrates (1, 2, 4) at the blanking time other than timing for reading out the electric signal from the detection parts X i, j are provided respectively between the support board substrates (1, 2, 4) and the plurality of detection parts X i, j . COPYRIGHT: (C)2004,JPO

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