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1. 发明专利

JP2000077390A Plasma processing system 审中-公开
标题翻译：等离子体处理系统
公开(公告)号：JP2000077390A
公开(公告)日：2000-03-14
申请号：JP24544298
申请日：1998-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： DOI TAKAYOSHI
IPC分类号： H05H1/46 , C23C16/52 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent abnormal discharge by monitoring the voltage between a vacuum chamber and a susceptor during an etching operation and controlling a high frequency signal applied to the susceptor when a specified level is exceeded.
SOLUTION: A susceptor 7 supporting an object 8 to be processed is connected with a high frequency power supply 10. A voltmeter 21 is connected with a vacuum chamber 1 and the susceptor 7 in order to monitor the voltage between them. A feedback circuit 22 is connected with the output side of the voltmeter 21 and the output from the feedback circuit 22 is applied to the high frequency power supply 10. When the voltage monitored by the voltmeter 21 exceeds a specified level, the feedback circuit 22 is actuated to suppress the output from the high frequency power supply 10 thus lowering the voltage applied to the susceptor 7. In other words, voltage between the vacuum chamber 1 and the susceptor 7 is kept constant at a specified level or below thus preventing abnormal discharge.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题：通过在蚀刻操作期间监视真空室和基座之间的电压来防止异常放电，并且当超过指定电平时控制施加到基座的高频信号。解决方案：支撑被处理物体8的感受体7与高频电源10连接。电压表21与真空室1和基座7连接，以便监视它们之间的电压。反馈电路22与电压表21的输出侧连接，反馈电路22的输出被施加到高频电源10.当由电压表21监视的电压超过指定电平时，反馈电路22为以抑制来自高频电源10的输出，从而降低施加到基座7的电压。换句话说，真空室1和基座7之间的电压保持恒定在特定电平以下，从而防止异常放电。

2. 发明专利

JPH08228011A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08228011A
公开(公告)日：1996-09-03
申请号：JP31650695
申请日：1995-12-05
申请人： TOSHIBA CORP
发明人： NAGAHISA SHUYA , KAMIMURA TAKAAKI , MATSUMURA KUNIO , DOI TAKAYOSHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786
摘要： PURPOSE: To provide a semiconductor device of a structure, wherein an irregularity in characteristics between elements is little, and a manufacturing method of capable of obtaining such the semiconductor device at a high yield. CONSTITUTION: A semiconductor device is provided with a substrate consisting of an insulative material, a gate electrode 103 formed on the substrate, a thin film, which is formed on the electrode 103 via gate insulating films 111 and 113 and consists of a silicide semiconductor, protective films 133 and 137, which are formed on the thin film and respectively have the two main surfaces opposing to each other, and source and drain electrodes 155 and 153 formed in such a way as to connect electrically with the thin film. The first main surfaces of the respective two main surfaces of the films 133 and 137 come into contact with the thin film and the regions, which are located in the vicinities of the second main surfaces of the films 133 and 137, of the electrodes 155 and 153 contain oxygen.

3. 发明专利

JPH06204187A ETCHING METHOD 失效
公开(公告)号：JPH06204187A
公开(公告)日：1994-07-22
申请号：JP72193
申请日：1993-01-06
申请人： TOSHIBA CORP
发明人： TANIGUCHI YASUYUKI , SAITO SHUICHI , DOI TAKAYOSHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To improve the etching rate of a molybdenum copper film by using the mixed gas among fluoric gas, oxygen, and chloric gas for reactive gas for etching, and heating the molybdenum alloy film to a specified temperature and keeping it there. CONSTITUTION:A molybdenum alloy film 9 is provided in the specified thickness, and further a silicon substrate 8, where resist 11 for forming a pattern is applied, is placed on a susceptor 7. Here, a heater 12 is buried in the susceptor 7. Hereby, the mixed gas among fluoric gas, oxygen, and chloric gas is supplied as reactive gas for etching from a supply source 3 while maintaining the silicon substrate 8 and the molybdenum alloy film 9 at a specified temperature, and also microwaves are supplied to a waveguide pipe 4a. Thereupon, the reactive gas for etching flows into the etching chamber 1, and etches the section where the resist 11 of the molybdenum alloy film 9 is removed. Hereby, the etching rate can be improved.

4. 发明专利

JP2000150493A MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000150493A
公开(公告)日：2000-05-30
申请号：JP34656299
申请日：1999-12-06
申请人： TOSHIBA CORP
发明人： DOI TAKAYOSHI
IPC分类号： H01L21/302 , G02F1/13 , G02F1/136 , G02F1/1365 , G02F1/1368 , H01L21/306 , H01L21/3065 , H01L21/66 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a semiconductor device which can detect the end point of vapor phase chemical etching accurately and can produce semiconductor devices with excellent characteristics over a large area. SOLUTION: An insulating substrate 10 is placed in the vacuum treatment chamber 110 of a housing 102. A thin film containing silicon is formed on the insulating substrate by a plasma which is induced by exciting etching gas supplied from a gas supply system 141 by an antenna 162. The thin film is patterned by vapor phase chemical etching in accordance with a resist pattern on the thin film. The emission intensity A of a light with a wavelength of a predetermined range is detected and the emission intensity B of a light with a specific wavelength included in the predetermined range is also detected during a patterning process by a photosensor 181. A control unit 192 divides the emission intensity B by the emission intensity A to generate a division signal, and the end of patterning is decided in accordance with the fluctuation of the division signal.

5. 发明专利

JP2000101086A FABRICATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000101086A
公开(公告)日：2000-04-07
申请号：JP26381198
申请日：1998-09-18
申请人： TOSHIBA CORP
发明人： OANA YASUHISA , FUKUDA KAICHI , DOI TAKAYOSHI
IPC分类号： H01L21/266 , G02F1/136 , G02F1/1368 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a fabrication method of semiconductor device in which fabrication time can be shortened while ensuring high fabrication yield. SOLUTION: The fabrication method of semiconductor device comprises a step of forming a first thin film 27 of non single crystal silicon on an insulating substrate 10, a step for forming a second thin film on the first thin film 27, a step for forming mask patterns 30, 31 by etching the second thin film, and a step for forming an ohmic contact region 28 by implanting impurity ions into the first thin film 27 through the mask patterns 30, 31 wherein the step of forming mask patterns 30, 31 and the step of implanting ions are carried out continuously without being exposed to the atmosphere.

6. 发明专利

JP2000031081A FABRICATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000031081A
公开(公告)日：2000-01-28
申请号：JP19351498
申请日：1998-07-09
申请人： TOSHIBA CORP
发明人： OANA YASUHISA , FUKUDA KAICHI , DOI TAKAYOSHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/265 , H01L21/266 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a fabrication method of semiconductor device in which fabrication time can be shortened while ensuring high fabrication yield. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a first thin amorphous silicon film on an insulating substrate 10, a step for forming a second thin film 53 on the first thin film 30 and forming a mask pattern 54 by etching the second thin film 53, and a step for forming source and drain regions 31, 33 by implanting impurity ions into the first thin film 30 through the mask pattern 54, wherein the step for forming the mask pattern 54 and the step for forming the source and drain regions 31, 33 are performed continuously without exposing to the atmosphere.

7. 发明专利

JPH07283203A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH07283203A
公开(公告)日：1995-10-27
申请号：JP7369594
申请日：1994-04-13
申请人： TOSHIBA CORP
发明人： DOI TAKAYOSHI
IPC分类号： C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent an adverse effect of plasma inflicted on the material to be treated by a method wherein an excitation chamber and a treatment chamber are isolated, and among the component contained in a plasma generated by the excitation of reaction gas in the excitation chamber, only the component which is effective for surface treatment of the material is passes through. CONSTITUTION:A nozzle plate 23 is provided as a control means on the lower end aperture of an excitation chamber, and an upper end aperture is blocked by a window member 24 consisting of the material which transmits microwaves. The component, which is contained in plasma and gives as adverse effect for etching treatment, such as ions, for example, are allowed to flow to ground G from a nozzle plate 23 by earthing the metal nozzle plate to the ground G when the etching treatment is conducted, and the ions are prevented from flowing into a treatment chamber 11. As a result, the material 14 is not damaged by a plasma when it is etched. Consequently, the treatment speed and the efficiency in plasma processing can be improved.

8. 发明专利

JPH06177388A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH06177388A
公开(公告)日：1994-06-24
申请号：JP32553792
申请日：1992-12-04
申请人： TOSHIBA CORP
发明人： DOI TAKAYOSHI
IPC分类号： H01L29/40 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To obtain a semiconductor integrated circuit with less defects by forming signal lines using a material which can yield a stable compound, can be easily post-treated, and is soluble to almost all materials. CONSTITUTION:In a circuit formed by successively forming silicon-compound thin films, such as a silicon oxide film 3, silicon nitride films 4 and 6, etc., on a substrate 1, signal lines 8 composed of three layers of tantalum, aluminum, and tantalum are formed on a silicon-compound thin film 7.

9. 发明专利

JPH05291197A 失效
公开(公告)号：JPH05291197A
公开(公告)日：1993-11-05
申请号：JP8869092
申请日：1992-04-09
申请人： TOSHIBA CORP
发明人： SAITO SHUICHI , DOI TAKAYOSHI , TANIGUCHI YASUYUKI , NIIMURA TADASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To be able to control the etching rate and selection ratio when executing etching using etching gas. CONSTITUTION:A method for etching amorphous silicon of material 8 to be etched made of silicon nitride and amorphous silicon sequentially formed on a substrate in etching chamber 1 by exciting etching gas which is introduced into this etching chamber, wherein the etching gas containing of fluorine-based gas of a mixture of carbon tetrafluoride and oxygen at a partial pressure ratio of 3:1 and chloric gas, and wherein the fluorine-based gas is mixed at a partial pressure ratio of about 15-67% to the aforementioned chloric gas.

10. 发明专利

JPH05198531A SURFACE PROCESSOR 失效
公开(公告)号：JPH05198531A
公开(公告)日：1993-08-06
申请号：JP711192
申请日：1992-01-20
申请人： TOSHIBA CORP
发明人： DOI TAKAYOSHI , NISHIMURA HIROSHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a surface processor which can improve etching rate. CONSTITUTION:This processor is equipped with a pillared discharge tube 28, where reactive gas is introduced and the inside diameters are set to be the same over the overall length, a waveguide tube 33, which introduces microwaves from the window member 32 blocking the opening at end of this discharge tube 28 into the discharge tube 28, and a processing chamber 21, which is provided to communicate with the opening at the other end of the discharge tube 28 through a nozzle plate 29, and the length from one end of the discharge chamber to the other end is set to approximately half the wavelength of a microwave.

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