专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS636529A MANUFACTURE OF ACTIVE MARTRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPS636529A
公开(公告)日：1988-01-12
申请号：JP15085886
申请日：1986-06-27
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC DEVICE ENG
发明人： MATSUMURA KUNIO , KOBAYASHI NOBUHIKO
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
摘要： PURPOSE:To make a display characteristic of a liquid crystal have a high performance by removing a low resistance semiconductor film on a semiconductor layer by etching, and thereafter, forming drain and source electrodes, and forming an inorganic protective film thereon by a hydrogen plasma treatment. CONSTITUTION:A gate electrode 25 and an insulating layer 26 are formed on a substrate 24. On its insulating layer 26, a semiconductor layer 27 is formed to a prescribed shape, and a low resistance semiconductor film 28 is accumulated. Subsequently, the low resistance semiconductor film 28 on the semiconductor layer 28 is formed to a prescribed shape by etching, and a drain electrode 29 and a source electrode 30 are formed. Next, a plasma treatment is performed to the drain electrode 29 and the source electrode 30, and they are covered with an inorganic protective film 31. Also, a part of the inorganic protective film 31 on the source electrode 30 is brought to an etching elimination and a display picture element electrode 21 is formed. Moreover, on these layers, a liquid crystal 23 is placed, and a transparent opposed electrode 22 is provided, by which a liquid crystal display device is constituted. Accordingly, since the inorganic protective film 31 is formed after a hydrogen plasma treatment has been performed, it is possible to make a resistance of the display picture element electrode 21 invariable, and it is possible top make a display characteristic and a TFT characteristic have a high performance.

2. 发明专利

JPS62283319A MANUFACTURE OF ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPS62283319A
公开(公告)日：1987-12-09
申请号：JP12634386
申请日：1986-05-31
申请人： TOSHIBA CORP
发明人： MATSUMURA KUNIO
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09F9/30
摘要： PURPOSE:To secure the high performance of a display picture element electrode and then facilitate the formation of an inorganic protection film by forming a metallic film on display picture element electrodes on the 1st substrate before the formation of the inorganic protection film. CONSTITUTION:A gate electrode 25 is formed firstly on the 1st substrate 24, an insulating layer 26 is deposited on this gate electrode 25, and then amorphous silicon hydride is deposited to form a semiconductor layer 27. On the insulating layer 26 including this semiconductor layer 27, ITO 28 and molybdenum 29, for example, are deposited in order and etched in a specific shape to form display picture electrodes 21. Then, aluminum, for example, is deposited on the insulating layer 26 including the display picture element electrodes 21 and semiconductor layer 27 and further etched to form a drain electrode 30 united with a data line (Yj) and a source electrode 32 united with a display picture element electrode 21 across the semiconductor 27.

3. 发明专利

JPS61120586A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS61120586A
公开(公告)日：1986-06-07
申请号：JP23948984
申请日：1984-11-15
申请人： Toshiba Corp
发明人： MATSUMURA KUNIO , YANO KENSAKU
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/3725 , H04N5/3728 , H04N5/374
摘要： PURPOSE: To prevent deterioration of a laminated photoconductive film by forming an insulation layer smoothing a rugged plane of a semiconductor substrate with an organic insulation layer and an inorganic insulation layer and to attain ease of taper etching of a contact hole through the structure of the inorganic insulation layer.
CONSTITUTION: A scanning part and the 1st electrode 8 are formed on a semiconductor substrate 1 and its surface is made coarse. Then a heat-resistant organic insulation layer 14 is coated on the coarse face and laminated to a height higher than the top of the electrode 8 by nearly 1,000Å. Then the organic insulation layer 14 is formed on the recess of the substrate 1 to form the inorganic insulation layer 15 on the elec trode 8 and the organic insulation layer 14. Then a contact hole 10 is provided to the insulation layer 15, and after an Al-Si is vapor-deposited on the entire face on the insulation layer 15, the 2nd electrode 11 is formed. Then a photoconductive film 12 is laminated on the electrode 11. Since the insulation layer 15 is formed while smoothing the rugged plane of the substrate 1 by the insulation layer 14, it is not required to polish the insulation layer 15. The photoconductive film 12 is not contami nated by the insulation layer 14 by the intervention of the insulation layer 15. Since the contact hole 10 is formed in contact with the insulation layer 15 only, taper etching is attained easily.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了通过形成利用有机绝缘层和无机绝缘层平滑半导体衬底的凹凸平面的绝缘层来防止层压光电导膜的劣化，并且通过无机绝缘层的结构实现接触孔的锥形蚀刻的容易绝缘层。构成：在半导体基板1上形成扫描部和第1电极8，使其表面变粗。然后，将耐热有机绝缘层14涂覆在粗糙面上，并且层压到比电极8的顶部高近几百埃的高度。然后在基板1的凹部上形成有机绝缘层14，以在电极8和有机绝缘层14上形成无机绝缘层15.然后，在绝缘层15上设置接触孔10，在绝缘层15的整个面上气相沉积Al-Si，形成第二电极11。然后在电极11上层叠光电导膜12.由于绝缘层15是通过绝缘层14平滑基板1的凹凸平面而形成的，因此不需要对绝缘层15进行抛光。光导膜12是绝缘层15不被绝缘层14所污染。由于接触孔10仅与绝缘层15形成接触，所以容易实现锥形蚀刻。

4. 发明专利

JPH11298004A THIN-FILM TRANSISTOR AND MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11298004A
公开(公告)日：1999-10-29
申请号：JP9605798
申请日：1998-04-08
申请人： TOSHIBA CORP
发明人： SETO TOSHISUKE , MATSUMURA KUNIO
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve the throughput of a method for manufacturing liquid crystal display device by eliminating the need for dehydrogenation which has been required before excimer laser annealing after an amorphous Si film formation in conventional examples. SOLUTION: An amorphous Si film 15A is formed on a glass substrate 10 by the intermittent discharge plasma CVD method. When the Si film 15A is formed by the intermittent discharge plasma CVD method, the hydrogen concentration in the Si film 15A can be suppressed to a low value. Then the amorphous Si film 15A is changed into a polysilicon film 15B by performing excimer laser annealing on the amorphous Si film 15A.

5. 发明专利

JPH04236432A MANUFACTURE OF THIN FILM TRANSISTOR 失效
公开(公告)号：JPH04236432A
公开(公告)日：1992-08-25
申请号：JP509891
申请日：1991-01-21
申请人： TOSHIBA CORP
发明人： MATSUMURA KUNIO
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a high performance and homogeneous FET characteristic without damaging a gate insulating film and etching stopper by using a mixed gas including CIF3 gas for the etching of active layer and ohmic contact layer. CONSTITUTION:A gate electrode 2 is first formed integrally with a gate line to a first substrate 1 formed of plastic. Thereafter, a silicon nitride gate insulating film 3 and an etching stopper 5 are formed with glow discharge of nitrogen gas, etc. The etching gas consisting of nitrogen gas and CIF gas is crammed within an apparatus and then a pressure is applied thereto. An unwanted area of a-Si: H film in contact with the etching gas may be removed by the etching without giving any damage on the lower gate insulating film and etching stopper.

6. 发明专利

JPS62102568A MANUFACTURE OF PHOTOCONDUCTIVE MEMBER 失效
公开(公告)号：JPS62102568A
公开(公告)日：1987-05-13
申请号：JP24135985
申请日：1985-10-30
申请人： TOSHIBA CORP
发明人： MIYAGAWA RYOHEI , YANO KENSAKU , MATSUMURA KUNIO , ADACHI GENICHI
IPC分类号： H01L31/04 , H01L21/205 , H01L27/14 , H01L27/146
摘要： PURPOSE:To form a high resistance and photoconductive a-Si:H film by depositing an amorphous or a fine crystal semiconductor which contains B atoms in a reaction chamber, and then forming a photoconductor layer by a glow discharge decomposing method on a support for a photoconductive member. CONSTITUTION:Valves 32-40 of desired gas system are opened to lead desired gases into a reaction chamber 10. Then, raw gas is decomposed by glow discharge, and a film is deposited on a support 1. First, a lower charge implantation preventing layer 2 of a hole implantation preventing layer is deposited. Then, before a photosensor layer 3 is deposited on the layer 3, an amorphous or fine crystal semiconductor which contains B atoms is preliminarily deposited in the chamber 10 to be adhered on the inner wall of the chamber 10 and the upper and lower electrodes 11, 19, and the resistance of the layer 3 is increased by inputting the B atoms of the deposited layer. Thereafter, the layer 3 made of a-Si:H is formed of the layer 2 by a glow discharge decomposing method in the chamber 10.

7. 发明专利

JPS6279660A IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6279660A
公开(公告)日：1987-04-13
申请号：JP21796785
申请日：1985-10-02
申请人： TOSHIBA CORP
发明人： YANO KENSAKU , MATSUMURA KUNIO , MIYAGAWA RYOHEI
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372
摘要： PURPOSE:To improve sensitivity to light of 400-600nm wavelength and reduce after images and printed images by a method wherein a method for doping amorphous Si:H with boron is improved and a photosensitive layer with high resistance and high muetaue product is realized. CONSTITUTION:A positive hole blocking layer 60 composed of an I-type amorphous SiC:H layer, a photosensitive layer 61 composed of a boron doped amorphous Si:H layer formed by a preliminary discharge method, an electron blocking layer 62 composed of a P-type amorphous SiC:H layer and a transparent electrode 63 are successively laminated. The positive hole blocking layer 60 and the electron blocking layer 62 are equivalent to charge injection blocking layers. A condition sigmaD of forming the photosensitive layer 61 is 5X10 (OMEGAcm) and the photosensitive layer 61 is composed of the amorphous Si:H layer with boron content of 5X10 atoms/cc or less. The photosensitive layer composed of the above-mentioned amorphous Si:H can be given excellent characteristics by employing a preliminary discharge method compared to a doped film formed by a gas phase method which has sensitivity, in a wavelength range of 400-600nm, smaller than an undoped film by two digits.

8. 发明专利

JPS58206032A Image pick-up tube 失效
标题翻译：图像拾取管
公开(公告)号：JPS58206032A
公开(公告)日：1983-12-01
申请号：JP9007482
申请日：1982-05-27
申请人： Toshiba Corp
发明人： YOSHINO TSUNEICHI , MATSUMURA KUNIO
IPC分类号： H01J31/38 , H01J29/74
CPC分类号： H01J29/74
摘要： PURPOSE:To improve reliability of electric contact through a spring piece on the end of an electrostatic deflection electrode by forming an electrostatic electrode with a complex vacuum evaporation layer of a chrome metal and a soft metal such as gold, silver, copper and aluminum. CONSTITUTION:On the inside periphery of a glass casing 1, a chrome metal vacuum evaporation layer 14 is formed in thickness of 1,000Angstrom , while the gold vacuum evaporation layer 15 is formed in thickness of 500Angstrom on the chrome metal vacuum evaporation layer 14. An electrostatic deflection electrode 13 is obtained by separating a complex vacuum evaporation layer of the chrome metal and gold by the laser trimming processing. The thickness of the gold vacuum evaporation layer 15 from an electric contact point is required to be not less than 300Angstrom and desired not to exceed two times of the chrome film thickness in view of the nature of laser processing.
摘要翻译：目的：通过用铬金属和软金属如金，银，铜和铝的复合真空蒸发层形成静电电极，提高静电偏转电极端部弹簧片的电接触的可靠性。构成：在玻璃外壳1的内周上形成有金属真空蒸发层14，金属真空蒸镀层14的厚度为1000埃，镀金属真空蒸发层14的厚度为500埃。通过激光修整处理分离铬金属和金的复合真空蒸镀层，得到静电偏转电极13。考虑到激光加工的性质，金真空蒸发层15从电接触点的厚度要求不小于300埃，并且希望不超过铬膜厚度的两倍。

9. 发明专利

JPH06181221A MANUFACTURE OF FILM TRANSISTOR 失效
公开(公告)号：JPH06181221A
公开(公告)日：1994-06-28
申请号：JP33328892
申请日：1992-12-14
申请人： TOSHIBA CORP
发明人： MATSUMURA KUNIO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786 , H01L29/784
摘要： PURPOSE:To equalize the distribution of film thickness on an insulating substrate by specifying the discharge frequency of high frequency power adding to an discharge electrode, and supplying this high frequency power, repeating on time and off time alternately, according to the on time and off time capable of being set within an optional range, thereby performing film growth. CONSTITUTION:The inside of the chamber of a plasma CVD device, where four sheets of insulating substrates 11 are taken in on a substrate holder 30, is heated to a specified temperature, and then silane (SiH4) gas, ammonium (NH3) gas, and nitrogen (N2) gas are introduced into inside, and the pressure is adjusted to 100Pa. After this, 1000W of high frequency power where frequency is 13.56MHz (1MHz-100MHz), with modulation frequency 500Hz (0-5KHz) and duty ratio 50% is applied intermittently to a discharge electrode 31 so as to form a gate insulating film consisting of a silicon nitride. Hereby, a gate insulating film high in thickness uniformity can be gotten without lowering film growth rate.

10. 发明专利

JPS63267430A CLEANING METHOD FOR INSIDE OF REACTION CHAMBER 失效
公开(公告)号：JPS63267430A
公开(公告)日：1988-11-04
申请号：JP10186187
申请日：1987-04-27
申请人： TOSHIBA CORP
发明人： MATSUMURA KUNIO
IPC分类号： B01J19/08 , B01J19/00 , C23C14/00 , C23C14/22 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To clean the inside of a device efficiently and prepare a silicon group film of good characteristics by cleaning the inside of a reaction chamber by means of plasma cleaning utilizing NF3 gas and carrying out subsequently plasma treatment of hydrogen gas. CONSTITUTION:When cleaning a reaction chamber forming a film such as film transistor or the like, nitrogen trifluoride is introduced into a reaction chamber 31 and high-frequency power is applied between an upper section electrode 32 and a lower section electrode 39 to generate glow discharge. NF3 gas is decomposed by said glow discharge and active F radical is formed to carry out etching, for instance, a hydrogenated amorphous silicon membrane adhered to the inner wall of the reaction chamber 31 and the electrodes 32 and 39. Then, adhered substances such as HF, F and the like formed by the etching in the previous stage can be removed by introducing hydrogen gas into the reaction chamber 31 and discharging out high-frequency power.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式