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    • 2. 发明专利
    • Light emitting substrate, image display device and method of manufacturing light emitting substrate
    • 发光基板,图像显示装置及制造发光基板的方法
    • JP2007027063A
    • 2007-02-01
    • JP2005211743
    • 2005-07-21
    • Toshiba Corp株式会社東芝
    • ASAI HIRONORIARUBESAARU KEIKOMATSUDA NAOHISA
    • H01J29/28H01J9/22H01J29/32H01J31/12
    • PROBLEM TO BE SOLVED: To improve the reliability of an image display device by preventing the brightness of a whole light emitting layer from being perceived to be lower in a short time due to lowering of brightness in a region of the light emitting layer where high energy is irradiated.
      SOLUTION: This light emitting substrate comprises: a substrate 21; a light emitting layer 22 which is formed on the substrate 21 and emits light by being irradiated with electron beams having an energy density distribution; a reflection layer 24 which is formed on the light emitting layer 22 and reflects the light emitted from the light emitting layer 22; and a low reflection layer 24b which is formed on the light emitting layer 22, and is opposite to a high-energy irradiated region in the light emitting layer 22 onto which the high energy-density range of electron beams is irradiated, and has a lower reflection rate than that of the reflection layer 24, and reflects the light emitted from the light emitting layer 22.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了通过防止由于发光层的区域中的亮度降低而使整个发光层的亮度在短时间内被感知为较低,从而提高图像显示装置的可靠性 在那里照射高能量。 解决方案:该发光基板包括:基板21; 发光层22,其形成在基板21上,通过用具有能量密度分布的电子束照射发光; 反射层24,其形成在发光层22上并反射从发光层22发射的光; 以及形成在发光层22上的低反射层24b,与发光层22的高能量密度范围照射的发光层22的高能照射区域相反,具有较低的 反射率高于反射层24的反射率,并且反射从发光层22发射的光。版权所有(C)2007,JPO&INPIT
    • 5. 发明专利
    • Package for semiconductor element and its manufacture
    • 半导体元件及其制造包装
    • JPH11274345A
    • 1999-10-08
    • JP7070398
    • 1998-03-19
    • Toshiba Corp株式会社東芝
    • ASAI HIRONORIIYOGI YASUSHI
    • H01L23/14H01L23/08H01L23/10
    • H01L2224/16225H01L2224/48091H01L2224/48227H01L2924/00014
    • PROBLEM TO BE SOLVED: To restrain the deterioration of bonding strength between a nitride ceramics board and adhesive by specifying the ratio of the number of atoms of oxygen to nitrogen in a surface or a surface layer of a nitride ceramics board. SOLUTION: An aluminum nitride board of 35×35 mm, whose thickness is 0.6 mm and surface roughness Rmax is 5 to 10 μm is prepared as a nitride ceramics board 1, and the nitride ceramics board 1 is subjected to thermal oxidation in air of 900 deg.C. The surface of the nitride ceramics board 1 is exposed to oxygen plasma for 60 seconds in an oxygen ashing device under process conditions of pressure of 30 Pa, oxygen flow rate of 100 SCCM, with an input power of 400 W. The nitride ceramics board 1 is subjected to ultrasonic cleaning for 50 minutes in mixed solution of nitride acid and water of 20 to 40 deg.C. the nitride ceramics board 1 forces vapor of temperature of 121 deg.C and a pressure of 1 atm into a pressure cooker device. The ratio of the number of atoms of oxygen to nitrogen in a surface or a surface layer of the nitride ceramics board 1 is made larger than 0.3.
    • 要解决的问题:通过规定氮化物陶瓷板的表面或表面层中氧与氮的原子数的比例来抑制氮化物陶瓷板和粘合剂之间的接合强度的劣化。 解决方案:制备厚度为0.6mm,表面粗糙度Rmax为5〜10μm的35×35mm的氮化铝板作为氮化物陶瓷基板1,氮化物陶瓷基板1在空气中进行900℃的热氧化 摄氏度 氮化物陶瓷板1的表面在氧气灰化装置中在输入功率为400W的压力为30Pa,氧气流量为100SCCM的工艺条件下暴露于氧等离子体60秒。氮化物陶瓷板1 在氮化物和水的混合溶液中进行超声波清洗50分钟20〜40℃。 氮化物陶瓷板1将压力为121摄氏度的压力和1大气压的蒸气压入压力锅装置。 氮化物陶瓷板1的表面或表面层中的氧原子数与氮原子数的比例大于0.3。
    • 6. 发明专利
    • Phosphor
    • JP2013216909A
    • 2013-10-24
    • JP2013137151
    • 2013-06-28
    • Toshiba Corp株式会社東芝
    • FUKUDA YUMIASAI HIRONORI
    • C09K11/64
    • PROBLEM TO BE SOLVED: To provide a phosphor with high quantum efficiency, and good temperature characteristics.SOLUTION: A phosphor comprises an inorganic compound having a composition including a metal element M, a trivalent element Mdifferent from the metal element M, a tetravalent element Mdifferent from the metal element M and either or both of O and N, where a part of the metal element M is replaced with an emission center element. A crystal structure of the phosphor has substantially the same crystal structure of SrAlSiON, lengths of chemical bonds M-N and M-N are each within ±15% compared to lengths of Al-N and Si-N calculated from a lattice constant and atomic coordinate of SrAlSiON. This phosphor exhibits an emission peak between wavelengths of 490 nm and 580 nm, when excited with a light of 250-500 nm wavelength.
    • 要解决的问题:提供具有高量子效率和良好温度特性的荧光体。解决方案:一种荧光体包括具有包含金属元素M,与金属元素M不同的三价元素的组成的无机化合物,四价元素M不同 从金属元素M和O和N中的任一个或两者,其中金属元素M的一部分被发射中心元件替代。 荧光体的晶体结构与SrAlSiON的晶格常数和原子座标计算的Al-N和Si-N的长度相比,SrAlSiON的晶体结构基本相同,化学键M-N和M-N的长度分别在±15%以内。 当用250-500nm波长的光激发时,该荧光体表现出波长为490nm和580nm之间的发射峰。
    • 9. 发明专利
    • Display device
    • 显示设备
    • JP2006164852A
    • 2006-06-22
    • JP2004357145
    • 2004-12-09
    • Toshiba Corp株式会社東芝
    • MITSUISHI IWAOASAI HIRONORIFUKUDA KATSUYOSHI
    • H01J31/12C09K11/08C09K11/56H01J29/20H01J29/32
    • PROBLEM TO BE SOLVED: To provide a display device capable of suppressing the degradation of the luminance of display caused by the contamination of an electron source, in a thin display device where an electron emission area of each emitter element is large.
      SOLUTION: This display device is provided with: the emitter elements 10 formed on a substrate 4 facing a fluorescent film 3 and using a certain range facing the fluorescent film 3 as the electron emission area S; and a screen composed by incorporating the fluorescent film 3 formed of a phosphor 21 containing, as a mother body, a zinc sulfide excited by an electron beam emitted from the emitter element 10, and formed by coating the surface thereof with a phosphate compound of alkaline-earth elements.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够抑制由于电子源的污染引起的显示亮度劣化的显示装置,其中每个发射极元件的电子发射面积较大的薄型显示装置。 该显示装置设置有:形成在面向荧光膜3的基板4上并且使用面向荧光膜3的一定范围作为电子发射区域S的发射极元件10; 以及由包含由发射元件10发射的电子束激发的硫化锌作为母体的磷光体21形成的荧光膜3构成的屏幕,并且通过将其表面涂覆有碱性磷酸盐化合物 - 元素。 版权所有(C)2006,JPO&NCIPI