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1. 发明专利

JP2013074220A Method for removing deposit 有权
标题翻译：去除沉积物的方法
公开(公告)号：JP2013074220A
公开(公告)日：2013-04-22
申请号：JP2011213677
申请日：2011-09-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Toshiba Corp , 株式会社東芝
发明人： TAWARA SHIGERU , NISHIMURA EIICHI , MATSUMOTO TAKANORI
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/3065 , B05D3/145 , H01L21/02057 , H01L21/28 , H01L21/31116 , H01L21/76224
摘要： PROBLEM TO BE SOLVED: To provide a method for removing a deposit by which the deposit can be removed efficiently even if the deposit contains an organic material.SOLUTION: A method for removing a deposit that deposited on a surface of a pattern formed on a substrate by etching. The method comprises: a first processing step of exposing the substrate to an atmosphere including a hydrogen fluoride gas; an oxygen plasma processing step of exposing the substrate to oxygen plasma while heating after the first processing step; and a second processing step of exposing the substrate to the atmosphere including the hydrogen fluoride gas after the oxygen plasma processing step.
摘要翻译：要解决的问题：提供一种去除沉积物的方法，即使沉积物含有有机材料，沉积物也可以有效地去除沉积物。解决方案：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的方法。该方法包括：将衬底暴露于包括氟化氢气体的气氛的第一处理步骤; 氧等离子体处理步骤，在第一处理步骤之后加热时将基板暴露于氧等离子体; 以及在氧等离子体处理步骤之后将衬底暴露于包括氟化氢气体的气氛的第二处理步骤。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012033891A Plasma processing method and semiconductor device manufacturing method 有权
标题翻译：等离子体处理方法和半导体器件制造方法
公开(公告)号：JP2012033891A
公开(公告)日：2012-02-16
申请号：JP2011129790
申请日：2011-06-10
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： TAWARA SHIGERU , NISHIMURA EIICHI , YAMASHITA FUMIKO , TOMITA HIROSHI , OIWA NORIHISA , OGUCHI HISASHI , OMURA MITSUHIRO
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/3205 , H01L21/3213 , H01L23/52
CPC分类号： H01L21/02071
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method and a semiconductor device manufacturing method capable of effectively removing deposits including metal accumulated on a pattern sidewall by dry processing while suppressing pattern thinning by side etching.SOLUTION: A plasma processing method for forming a pattern having a metal layer in a laminate structure through a step of plasma-etching the metal layer formed on a substrate and then removing deposits accumulated in a pattern sidewall part and including metal that constitutes the metal layer comprises: a protective layer formation step of forming an oxide or chloride of the metal in the sidewall part of the metal layer; a deposit removal step of removing the deposits by the action of plasma of gas including a fluorine atom; and a reduction step of reducing the oxide or chloride of the metal by the action of plasma including hydrogen after the protective layer formation step and the deposit removal step.
摘要翻译：解决的问题：提供一种等离子体处理方法和半导体器件制造方法，其能够通过干法处理有效地除去堆积在图案侧壁上的金属的沉积物，同时通过侧面蚀刻抑制图案变薄。解决方案：一种等离子体处理方法，用于通过等离子体蚀刻形成在基板上的金属层，然后去除积聚在图案侧壁部分中的沉积物并包括构成的金属的步骤，在层叠结构中形成具有金属层的图案金属层包括：保护层形成步骤，在金属层的侧壁部分形成金属的氧化物或氯化物; 沉积物去除步骤，通过包含氟原子的气体的等离子体的作用除去沉积物; 以及还原步骤，在保护层形成步骤和沉积物去除步骤之后，通过包括氢的等离子体的作用还原金属的氧化物或氯化物。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011142248A Method and device for cleaning substrate 有权
标题翻译：清洗基板的方法和装置
公开(公告)号：JP2011142248A
公开(公告)日：2011-07-21
申请号：JP2010002720
申请日：2010-01-08
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： TAWARA SHIGERU , YAMASHITA FUMIKO , NISHIMURA EIICHI , OIWA NORIHISA , MATSUSHITA TAKAYA , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/67028 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a method and device for cleaning a substrate which remove a by-product and residual fluorine without damaging a pattern including an exposed portion of a silicon layer when forming the pattern by plasma etching.
SOLUTION: In the method for cleaning the substrate, the surface of a substrate is cleaned after a pattern is formed on the substrate by plasma etching. The method includes a by-product removing step of exposing the substrate to an HF-gas atmosphere to remove the by-product, and a residual-fluorine removing step of plasmanizing cleaning gas containing hydrogen gas and gas of a compound containing carbon and hydrogen as constituent elements, and causing the plasma cleaning gas to act on the substrate to remove residual fluorine on the substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于清洁基板的方法和装置，其在通过等离子体蚀刻形成图案时，不会损坏包括硅层的暴露部分的图案，而不会损坏副产物和残余氟。解决方案：在清洁基板的方法中，在通过等离子体蚀刻在基板上形成图案之后，清洁基板的表面。该方法包括将基板暴露于HF气体气氛以除去副产物的副产物除去步骤，以及将含有氢气的清洗气体和含有碳和氢的化合物的气体等离子化的残余氟除去步骤作为构成元件，并且使等离子体清洁气体作用在基板上以除去基板上的残余氟。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2012238711A Deposit removing method 有权
标题翻译：沉积物去除方法
公开(公告)号：JP2012238711A
公开(公告)日：2012-12-06
申请号：JP2011106464
申请日：2011-05-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Toshiba Corp , 株式会社東芝
发明人： TAWARA SHIGERU , NISHIMURA EIICHI , TOMITA HIROSHI , OIWA NORIHISA , OGUCHI HISASHI , OMURA MITSUHIRO
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/304
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a deposit removing method which can efficiently remove a deposit and inhibit damages to a silicon dioxide of a structure in a pattern regardless of a length of standing time after an etching treatment.SOLUTION: A deposit removing method of removing a deposit deposited on a surface of a pattern formed on a substrate by etching, comprises: an oxygen plasma processing step of exposing the substrate to an oxygen plasma while heating the substrate; and a cycle processing step of repeatedly performing, after the oxygen plasma processing step, a plurality of cycles of a first period of exposing the substrate to an atmosphere of a mixed gas of a hydrogen fluoride gas and an alcohol gas in a processing chamber and a partial pressure of the alcohol gas is set at a first partial pressure, and a second period of venting the processing chamber and the partial pressure of the alcohol gas is set at a second partial pressure lower than the first partial pressure.
摘要翻译：要解决的问题：提供一种沉积物去除方法，其可以有效地去除沉积物并且抑制对图案中的结构的二氧化硅的损伤，而不管蚀刻处理后的静置时间长短如何。解决方案：通过蚀刻去除沉积在形成在衬底上的图案的表面上的沉积物的沉积物去除方法包括：氧等离子体处理步骤，在加热衬底的同时将衬底暴露于氧等离子体; 以及循环处理步骤，在氧等离子体处理步骤之后，在处理室中重复进行使基板暴露于氟化氢气体和醇气体的混合气体的第一周期的多个循环，以及将醇气体的分压设定为第一分压，将处理室排气的第二时段和醇气体的分压设定为低于第一分压的第二分压。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2014170894A Method of etching metal layer 有权
标题翻译：蚀刻金属层的方法
公开(公告)号：JP2014170894A
公开(公告)日：2014-09-18
申请号：JP2013043100
申请日：2013-03-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NISHIMURA EIICHI , YAMASHITA FUMIKO , SASA KOYUMI
IPC分类号： H01L21/3065 , C23F4/00 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/532
CPC分类号： C23F4/00 , H01L21/02071 , H01L21/32136 , H05K3/027 , H05K2203/087 , H05K2203/092 , H05K2203/095 , H05K2203/1388 , H05K2203/1484 , H05K2203/1492 , H05K2203/1509
摘要： PROBLEM TO BE SOLVED: To provide a method of etching a copper layer while forming a protection layer containing carbon on a mask, with which it is possible to remove the protection layer formed at the time of the etching.SOLUTION: In an embodiment, a method of etching a metal layer is provided which includes the steps of: (a) etching a metal layer of a workpiece through etching based on ion sputtering while forming a protection layer containing carbon on a surface of a mask for the workpiece (step (a)); (b) exposing the workpiece to oxygen plasma after the step of etching the metal layer (step (b)); and (c) exposing the workpiece to hexafluoroacetylacetone after the step of exposing the workpiece to the oxygen plasma (step (c)).
摘要翻译：要解决的问题：提供一种在掩模上形成含有碳的保护层的同时蚀刻铜层的方法，通过该方法可以去除蚀刻时形成的保护层。解决方案：在一个实施方案中，提供蚀刻金属层的方法，其包括以下步骤：（a）通过基于离子溅射的蚀刻来蚀刻工件的金属层，同时在用于工件的掩模的表面上形成含有碳的保护层（步骤（a ））; （b）在蚀刻金属层的步骤之后将工件暴露于氧等离子体（步骤（b））; 和（c）在将工件暴露于氧等离子体的步骤（步骤（c））之后将工件暴露于六氟乙酰丙酮。

6. 发明专利

JP2013110139A Manufacturing method for semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2013110139A
公开(公告)日：2013-06-06
申请号：JP2011251397
申请日：2011-11-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NISHIMURA EIICHI , SHOSHI TADASHI , YAMASHITA FUMIKO , ADACHI KENJI
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/3088 , H01J37/32091 , H01L21/0337 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/32137
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of removing a silicon-containing layer in which a silicon oxide layer or a silicon nitride layer is formed in a side wall part without causing a residue and a loss in a lower layer film, and manufacturing a good-quality semiconductor device.SOLUTION: A manufacturing method for a semiconductor device comprises the steps of: forming a silicon oxide layer or a silicon nitride layer so as to cover the side wall part of the patterned silicon-containing layer formed on a substrate by the silicon nitride layer or the silicon oxide layer; and leaving the silicon nitride layer or the silicon oxide layer formed in the side wall part by selectively removing the silicon-containing layer (plasma etching step). The plasma etching step uses an etching gas including a SFgas.
摘要翻译：解决的问题：为了提供能够去除在侧壁部分中形成氧化硅层或氮化硅层的含硅层的半导体器件的制造方法，而不引起残留物和损耗在下层膜中，制造出优质的半导体器件。解决方案：半导体器件的制造方法包括以下步骤：形成氧化硅层或氮化硅层，以便通过氮化硅覆盖形成在衬底上的图案化含硅层的侧壁部分层或氧化硅层; 并且通过选择性地除去含硅层（等离子体蚀刻步骤）而留下形成在侧壁部分中的氮化硅层或氧化硅层。等离子体蚀刻步骤使用包括SF

7. 发明专利

JP2012199377A Substrate processing method and storage medium 有权
标题翻译：基板加工方法和储存介质
公开(公告)号：JP2012199377A
公开(公告)日：2012-10-18
申请号：JP2011062301
申请日：2011-03-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SONE TAKASHI , NISHIMURA EIICHI
IPC分类号： H01L21/3065 , C23F4/00
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/32091 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method in which a layer containing at least platinum can be etched without using a halogen gas.SOLUTION: When a platinum-manganese layer 37 formed in a wafer W is etched using a tantalum layer 38 having a predetermined pattern shape, a processing gas containing a carbon monoxide gas, a hydrogen gas, and an argon gas is used. A ratio of a flow rate of the hydrogen gas to the total flow rate of the carbon monoxide gas and the hydrogen gas in the processing gas is 50 to 75%.
摘要翻译：要解决的问题：提供一种基板处理方法，其中可以在不使用卤素气体的情况下蚀刻至少含有铂的层。解决方案：使用具有预定图案形状的钽层38蚀刻在晶片W中形成的铂 - 锰层37时，使用含有一氧化碳气体，氢气和氩气的处理气体。氢气的流量与处理气体中的一氧化碳气体和氢气的总流量的比例为50〜75％。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011216617A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2011216617A
公开(公告)日：2011-10-27
申请号：JP2010082388
申请日：2010-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJIWARA KAORU , TAMURA AKITAKE , DOBASHI KAZUYA , NISHIMURA EIICHI
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To form a line and space structure where pattern collapse does not occur in a drying process after liquid cleaning.SOLUTION: In the pattern forming method, a plurality of projected stripe bodies which are almost parallel are formed on a substrate, films are formed on the projected stripe bodies formed on the substrate and the projected stripe bodies are removed after the films are formed. The plurality of first projected stripe bodies which are almost parallel and a plurality of second projected stripe bodies which are connected to ends of the plurality of first projected stripe bodies or cross the plurality of first projected stripe bodies are formed on the substrate. Connection parts or cross parts with the first projected stripe bodies in the plurality of second projected stripe bodies formed on the substrate are cut. The films are respectively formed on the surfaces of the first and second projected stripe bodies, and the first and second projected stripe bodies are removed after the films are formed.
摘要翻译：要解决的问题：形成在液体清洗之后的干燥过程中不发生图案塌陷的线和空间结构。解决方案：在图案形成方法中，在基板上形成大致平行的多个突出的条状体，在形成在基板上的突出的条状体上形成膜，并且在形成膜之后移除投影的条状体。多个第一投影条纹体几乎平行，并且多个第二投影条纹体连接到多个第一投影条纹体的端部或与多个第一投影条纹体交叉，形成在基板上。与形成在基板上的多个第二投影条纹体中的第一投影条纹体的连接部分或十字部分被切断。膜分别形成在第一和第二突出条纹体的表面上，并且在形成膜之后去除第一和第二突出条纹体。

9. 发明专利

JP2010219105A Substrate processing method 有权
标题翻译：基板处理方法
公开(公告)号：JP2010219105A
公开(公告)日：2010-09-30
申请号：JP2009061138
申请日：2009-03-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KUSHIBIKI MASATO , NISHIMURA EIICHI
IPC分类号： H01L21/3065 , G03F7/40 , H01L21/027 , H01L21/31 , H01L21/316
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method reinforcing etching resistance of a mask layer and improving a flexibility in working of a layer to be processed when forming an opening pattern of a dimension satisfying a request for downsizing a semiconductor device. SOLUTION: A mineralization step for mineralizing an organic film made of, for example, a photoresist film 53 as a mask layer of a wafer W, namely a substrate to be processed, has: an adsorption step for adsorbing a monovalent aminosilane on the surface of the photoresist film 53; and an oxidation step for oxidizing the adsorbed aminosilane by oxygen radical where oxygen is subjected to plasma excitation and hence modifying the photoresist film 53 to an Si oxide film. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在形成满足半导体器件的尺寸要求的尺寸的开口图案时提供掩模层的耐蚀刻性的基板处理方法，提高待加工层的加工柔性。解决方案：用于使由例如作为晶片W的掩模层的光致抗蚀剂膜53即被处理基板制成的有机膜成矿的矿化步骤具有：将一价氨基硅烷吸附在光致抗蚀剂膜53的表面; 以及氧化步骤，用氧氧进行吸附的氨基硅烷氧化，氧气进行等离子体激发，从而将光致抗蚀剂膜53修饰成Si氧化膜。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010212104A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2010212104A
公开(公告)日：2010-09-24
申请号：JP2009057327
申请日：2009-03-11
申请人： Emd:Kk , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社イー・エム・ディー
发明人： SETSUHARA YUICHI , NISHIMURA EIICHI , EBE AKINORI
IPC分类号： H05H1/46 , C23C16/505
CPC分类号： H01J37/3211 , H01J37/321
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device capable of forming a strong induction electromagnetic field in a vacuum container and homogenizing more density distribution of plasma and preventing contamination of a base body caused by generation of particles and sputtering of conductor of a high-frequency antenna. SOLUTION: The plasma processing device 10 with an inductive coupling system using high-frequency discharge has a vacuum container 11, an antenna arrangement section 12 arranged between an internal face 111B and an external face 111A of a wall of the vacuum container 11, one high-frequency antenna arranged at the antenna arrangement section 12 and terminated without turning, and a partition material 15 partitioning between the antenna arrangement section 12 and the inside 112 of the vacuum container and made from a dielectric. The length of the high-frequency antenna 13 is shorter than the length of one quarter wavelength of the high frequency. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在真空容器中形成强感应电磁场的等离子体处理装置，并且使等离子体的更多的密度分布均匀化并防止由于颗粒的产生和导体的溅射引起的基体的污染高频天线。解决方案：具有使用高频放电的电感耦合系统的等离子体处理装置10具有真空容器11，布置在真空容器11的壁的内表面111B和外表面111A之间的天线布置部分12 设置在天线配置部12并且不转动而终止的一个高频天线以及在天线配置部12与真空容器的内部112之间分隔并由电介质构成的分隔材料15。高频天线13的长度比高频四分之一波长的长度短。版权所有（C）2010，JPO＆INPIT

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