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1. 发明专利

JP2006244891A Microwave plasma processing device 审中-公开
标题翻译：微波等离子体处理装置
公开(公告)号：JP2006244891A
公开(公告)日：2006-09-14
申请号：JP2005060151
申请日：2005-03-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TIAN CAI ZHONG , ISHIBASHI KIYOTAKA , NOZAWA TOSHIHISA , YAMAMOTO NOBUHIKO
IPC分类号： H05H1/46 , C23C16/511 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32192
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma processing device with small microwave power loss, hardly generating degradation of microwave power efficiency and abnormal discharge at an inside of an antenna. SOLUTION: The microwave plasma processing device 100 forms a plasma of processing gas in a chamber by the microwave, and applies the plasma treatment on an object to be processed by the plasma. A flat antenna 31 and a microwave transmission plate 28 are formed so as to closely contact to each other, practically not interposing air in between. A wave delaying plate 33 and the microwave transmission plate 28 are made of identical material, and the wave delaying plate 33, the flat antenna 28, and an equivalent circuit formed by a plasma satisfy a condition for resonance. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供微波功率损耗小的微波等离子体处理装置，在天线内部几乎不产生微波功率效率的劣化和异常放电。解决方案：微波等离子体处理装置100通过微波形成腔室中的处理气体的等离子体，并且通过等离子体对等待处理对象进行等离子体处理。平面天线31和微波传输板28形成为彼此紧密接触，实际上不会在其间插入空气。波延迟板33和微波传输板28由相同的材料制成，并且波延迟板33，平面天线28以及由等离子体形成的等效电路满足共振条件。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2014090058A Microwave heat treatment apparatus and method 审中-公开
标题翻译：微波热处理设备和方法
公开(公告)号：JP2014090058A
公开(公告)日：2014-05-15
申请号：JP2012238795
申请日：2012-10-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO NOBUHIKO
IPC分类号： H01L21/268 , H05B6/64
CPC分类号： H05B6/6491 , H05B6/806
摘要： PROBLEM TO BE SOLVED: To provide microwave heat treatment apparatus and method which allow for uniform and efficient heat treatment of a workpiece.SOLUTION: In a microwave heat treatment apparatus 1, a support device 4 comprises: a tubular shaft 14 penetrating substantially the center of the bottom 13 of a processing container 2 and extending to the outside of the processing container 2; a dielectric plate 15 provided near the upper end of the shaft 14 substantially in the horizontal direction; and a plurality of support pins 16 attached removably to the peripheral part of the dielectric plate 15, as a support member. The dielectric plate 15 functions as heat-assisted means for promoting the heating of a wafer W with radiation heat, by absorbing the microwaves and generating heat.
摘要翻译：要解决的问题：提供允许对工件进行均匀有效的热处理的微波热处理装置和方法。解决方案：在微波热处理装置1中，支撑装置4包括：管状轴14，其基本上穿过处理容器2的底部13并延伸到处理容器2的外部; 电介质板15，其大致沿水平方向设置在所述轴14的上端附近; 以及可拆卸地附接到电介质板15的周边部分的多个支撑销16作为支撑构件。电介质板15用作通过吸收微波并产生热而促进用辐射热加热晶片W的热辅助装置。

3. 发明专利

JP2014032766A Microwave irradiation device 审中-公开
标题翻译：微波辐射器件
公开(公告)号：JP2014032766A
公开(公告)日：2014-02-20
申请号：JP2012171265
申请日：2012-08-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO NOBUHIKO , KITAGAWA JUNICHI , TANAKA KIYOSHI , OSADA ISATERU
IPC分类号： H05B6/80 , H05B6/64 , H05B6/68
CPC分类号： H05B6/6402 , H05B6/6491 , H05B6/806
摘要： PROBLEM TO BE SOLVED: To provide a microwave irradiation device which can perform processing with high mass-production stability and process reproducibility.SOLUTION: The microwave irradiation device includes a processing container 1 for housing a processed substrate W, a support member 23 for supporting the processed substrate W in the processing container 1, a microwave introduction mechanism 3 for generating and introducing microwaves into the processing container 1, a microwave introduction port 10 for introducing the microwaves generated by the microwave introduction mechanism 3 into the processing container 1, an electric field sensor 85 for measuring an electric field formed by the microwaves introduced into the processing container 1, and a control unit 9 for controlling the power of the microwaves introduced into the processing container 1 from the microwave introduction mechanism 3 via the microwave introduction port 10 on the basis of the electric field measured by the electric field sensor 85.
摘要翻译：要解决的问题：提供一种能够以高批量生产稳定性和工艺再现性进行加工的微波照射装置。微波照射装置包括：用于容纳处理基板W的处理容器1，用于支撑处理容器1中的处理衬底W，用于将微波产生并引入处理容器1的微波引入机构3，用于将由微波引入机构3产生的微波引入处理容器1的微波引入口10，传感器85，用于测量由引入处理容器1的微波形成的电场;以及控制单元9，用于通过微波引入口10从微波引入机构3控制从微波引入机构3引入到处理容器1中的微波的功率由电极测量的电场的基础 ric场传感器85。

4. 发明专利

JP2014192372A Microwave heating apparatus 审中-公开
标题翻译：微波加热装置
公开(公告)号：JP2014192372A
公开(公告)日：2014-10-06
申请号：JP2013067160
申请日：2013-03-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SHIMOMURA KOJI , KITAGAWA JUNICHI , YAMAMOTO NOBUHIKO , HAYASHI HIROYUKI , TANAKA KIYOSHI
IPC分类号： H01L21/268 , H01L21/265 , H05B6/80
CPC分类号： H05B6/642 , H05B6/645 , H05B6/80
摘要： PROBLEM TO BE SOLVED: To efficiently cool a processed substrate, relating to heating process in which microwave is introduced into a process container for heating the processed substrate.SOLUTION: A microwave heating processing apparatus 1 includes a support stage 13 for supporting a wafer W in a process container 10, a microwave introducing mechanism 11 for introducing microwave into the process container 10, a coolant flow passage 35 formed inside the support stage 13, and a coolant supply source 34 for supplying coolant to a coolant flow passage 35. At least a surface of the support stage 13 which supports the wafer W is made from a material of which a product of dielectric constant and a dielectric loss angle is less than 0.005. The coolant supplied from the coolant supply source 34 is a liquid which does not have electrical polarity.
摘要翻译：要解决的问题：为了有效地将加热微波加热处理过的衬底有效地冷却到用于加热处理衬底的加工容器中。微波加热处理设备1包括用于支撑晶片W的支撑台13 处理容器10，用于将微波引入处理容器10的微波引入机构11，形成在支撑台13内部的冷却剂流动通道35和用于向冷却剂流动通道35供应冷却剂的冷却剂供给源34.至少支撑晶片W的支撑台13的表面由介电常数和介电损耗角的乘积小于0.005的材料制成。从冷却剂供给源34供给的冷却剂是不具有电极性的液体。

5. 发明专利

JP2005268763A Plasma treatment apparatus and plasma treatment method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2005268763A
公开(公告)日：2005-09-29
申请号：JP2005037515
申请日：2005-02-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIBASHI KIYOTAKA , KITAGAWA JUNICHI , FURUI SHINGO , TIAN CAI ZHONG , YAMASHITA JUN , YAMAMOTO NOBUHIKO , NISHIZUKA TETSUYA , NOZAWA TOSHIHISA , NISHIMOTO SHINYA , YUASA TAMAKI
IPC分类号： H05H1/46 , C23C16/511 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve the quality of treatment by controlling a strong electric field and high density plasma produced near a contact between a supporting portion supporting a transmission window and the transmission window in a plasma treatment apparatus using a micro wave. SOLUTION: In the plasma treatment apparatus which treats a wafer W in a treatment container 2 with plasma generated by supplying a micro wave, the transmission window has a suspension portion 21 of the same material as the transmission window 20 in the center area of its lower surface. A gap d having a length of 0.5-10 mm, preferably 0.5-5 mm, is formed between the surrounding surface 21a of the suspension portion 21 and an inner surface 5a of a side wall continued from a supporting portion 6. The generation of a strong electric field and plasma at the contact C is controlled, thereby, an amount of sputtered particle, and radical, etc. which reaches the wafer W is also controlled. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在使用微波的等离子体处理装置中控制在支撑透射窗口的支撑部分和透射窗口之间的接触附近产生的强电场和高密度等离子体来提高处理质量。解决方案：在通过提供微波产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透射窗具有与中心区域中的透射窗20相同材料的悬置部分21 的下表面。在悬挂部分21的周围表面21a和从支撑部分6连续的侧壁的内表面5a之间形成长度为0.5-10mm，优选为0.5-5mm的间隙d。控制触点C处的强电场和等离子体，从而控制到达晶片W的溅射粒子和自由基等的量。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2014017121A S parameter acquisition method and abnormality detection method in microwave introduction module 有权
标题翻译： MICROWAVE引言模块中的参数采集方法和异常检测方法
公开(公告)号：JP2014017121A
公开(公告)日：2014-01-30
申请号：JP2012153902
申请日：2012-07-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEDA TARO , FUJINO YUTAKA , ADACHI HIKARI , MIYASHITA HIROYUKI , OSADA ISATERU , YAMAMOTO NOBUHIKO
IPC分类号： H05H1/00 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： G01R27/06 , G01R27/28 , H01J37/321 , H01J37/32192 , H01J37/32926 , H05H1/46 , H05H2001/463 , H05H2001/4682
摘要： PROBLEM TO BE SOLVED: To acquire S parameters in a plasma processing apparatus provided with a plurality of microwave introduction modules.SOLUTION: A plasma processing apparatus 1 includes a processing container 2, and a microwave introduction device 5 having a plurality of microwave introduction modules 61. Microwaves are introduced to each of the plurality of microwave introduction modules 61, and the S parameters for each combination of the plurality of microwave introduction modules 61 are obtained, based on the microwaves and the reflection microwaves reflected from the processing container 2 to the plurality of microwave introduction modules 61.
摘要翻译：要解决的问题：获取具有多个微波引入模块的等离子体处理装置中的S参数。解决方案：等离子体处理装置1包括处理容器2和具有多个微波引入模块61的微波引入装置5 微波被引入到多个微波引入模块61中的每一个上，并且基于从处理容器2反射到多个微波导入模块61的微波和反射微波，获得多个微波引入模块61的每个组合的S参数的微波引入模块61。

7. 发明专利

JP2013171847A Plasma processing device and plasma monitoring method 有权
标题翻译：等离子体处理装置和等离子体监测方法
公开(公告)号：JP2013171847A
公开(公告)日：2013-09-02
申请号：JP2012032775
申请日：2012-02-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJINO YUTAKA , FUKUDA YOSHINORI , KITAGAWA JUNICHI , YAMAMOTO NOBUHIKO
IPC分类号： H01L21/31 , C23C16/511 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To monitor a plurality of plasma states generated by a plurality of microwaves while identifying them in a plasma processing device of a type in which microwaves are lead into a process chamber through a plurality of parts.SOLUTION: A plasma processing device 1 comprises: a process chamber 2 and a microwave lead-in device 5 for leading microwaves into the process chamber 2. The microwave lead-in device 5 includes: a plurality of microwave-permeable plates 73 which are fitted in a plurality of openings of a ceiling part 11; antenna modules 61; and light-emission sensors 92 provided on the antenna modules 61 respectively. The light-emission sensors 92 each detect, through the corresponding microwave-permeable plate 73, light emission of a particular wavelength of plasma generated in the process chamber 2 underneath the microwave-permeable plates 73. The wavelength of a detection object is selected on the basis of the ratio of light emission intensities of two kinds of plasma generated by microwaves lead in through the two microwave-permeable plates 73 adjacent to each other.
摘要翻译：要解决的问题：监视由多个微波产生的多个等离子体状态，同时在微波通过多个部件引入处理室的类型的等离子体处理装置中识别它们。解决方案：等离子体处理装置 1包括：处理室2和用于将微波引导到处理室2中的微波引入装置5.微波引入装置5包括：多个微波透射板73，其装配在多个开口中天花板部分11; 天线模块61; 以及分别设置在天线模块61上的发光传感器92。发光传感器92通过相应的微波透射板73检测在微波透过板73下方的处理室2中产生的特定波长的等离子体的发光。检测对象的波长在由微波产生的两种等离子体的发光强度的比例通过彼此相邻的两个微波透过板73导入。

8. 发明专利

JP2003188103A PLASMA PROCESSOR 审中-公开
公开(公告)号：JP2003188103A
公开(公告)日：2003-07-04
申请号：JP2001381539
申请日：2001-12-14
申请人： TOKYO ELECTRON LTD
发明人： KASAI SHIGERU , YAMAMOTO NOBUHIKO , ADACHI HIKARI , OSADA ISATERU
IPC分类号： H05H1/46 , C23C16/511 , H01J37/32 , H01L21/205 , H01P5/103
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor which can mount a microwave generation source, etc., on a shield cover in one body by making a matching circuit small. SOLUTION: The plasma processor which is provided with a mount base 44 mounted with a mount W in a processing container 42 enabled to be evacuated, a plane antenna member 74 at an opening part of the ceiling of the processing container across a microwave transmission plate 70, and a grounded shield cover body 78 so that the top of the plane antenna member is covered and supplies the microwave from the microwave generation source 84 to the planar antenna member through a waveguide 8 is equipped with a member elevation mechanism 85 which relatively varies the vertical distance between the antenna member and shield cover body, a tuning rod 104 which is provided so that it can be inserted into the waveguide, a tuning rod driving mechanism 102 which moves the tuning rod so that its insertion quantity is adjustable, and a matching control part 114 which makes matching by controlling the elevation of the antenna member and the insertion of the tuning rod. COPYRIGHT: (C)2003,JPO

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