基本信息:
- 专利标题: Microwave heating apparatus
- 专利标题(中):微波加热装置
- 申请号:JP2013067160 申请日:2013-03-27
- 公开(公告)号:JP2014192372A 公开(公告)日:2014-10-06
- 发明人: SHIMOMURA KOJI , KITAGAWA JUNICHI , YAMAMOTO NOBUHIKO , HAYASHI HIROYUKI , TANAKA KIYOSHI
- 申请人: Tokyo Electron Ltd , 東京エレクトロン株式会社
- 专利权人: Tokyo Electron Ltd,東京エレクトロン株式会社
- 当前专利权人: Tokyo Electron Ltd,東京エレクトロン株式会社
- 优先权: JP2013067160 2013-03-27
- 主分类号: H01L21/268
- IPC分类号: H01L21/268 ; H01L21/265 ; H05B6/80
摘要:
PROBLEM TO BE SOLVED: To efficiently cool a processed substrate, relating to heating process in which microwave is introduced into a process container for heating the processed substrate.SOLUTION: A microwave heating processing apparatus 1 includes a support stage 13 for supporting a wafer W in a process container 10, a microwave introducing mechanism 11 for introducing microwave into the process container 10, a coolant flow passage 35 formed inside the support stage 13, and a coolant supply source 34 for supplying coolant to a coolant flow passage 35. At least a surface of the support stage 13 which supports the wafer W is made from a material of which a product of dielectric constant and a dielectric loss angle is less than 0.005. The coolant supplied from the coolant supply source 34 is a liquid which does not have electrical polarity.
摘要(中):
要解决的问题:为了有效地将加热微波加热处理过的衬底有效地冷却到用于加热处理衬底的加工容器中。微波加热处理设备1包括用于支撑晶片W的支撑台13 处理容器10,用于将微波引入处理容器10的微波引入机构11,形成在支撑台13内部的冷却剂流动通道35和用于向冷却剂流动通道35供应冷却剂的冷却剂供给源34.至少 支撑晶片W的支撑台13的表面由介电常数和介电损耗角的乘积小于0.005的材料制成。 从冷却剂供给源34供给的冷却剂是不具有电极性的液体。
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/263 | .....带有高能辐射的 |
------------------H01L21/268 | ......应用电磁辐射的,例如激光辐射 |