专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014154630A Substrate processing apparatus and deposition method 有权
标题翻译：基板加工装置和沉积方法
公开(公告)号：JP2014154630A
公开(公告)日：2014-08-25
申请号：JP2013021384
申请日：2013-02-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAWAKI JUN , KOSHIMIZU CHISHIO , TACHIBANA MITSUHIRO , KATO HISASHI , KOBAYASHI TAKESHI , MIURA SHIGEHIRO , KIMURA TAKAFUMI
IPC分类号： H01L21/31 , C23C16/505 , H05H1/46
CPC分类号： C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733
摘要： PROBLEM TO BE SOLVED: To perform plasma processing with high uniformity in the depth direction of a recess in the surface of each substrate, when performing plasma processing of a plurality of substrates each revolving by means of a turntable.SOLUTION: A bias electrode 120 is arranged at a position facing a modified region S1 on the lower side of a turntable 2, and a Faraday shield 95 is arranged on the upper side of the modified region S1. These bias electrode 120 and Faraday shield 95 are coupled capacitively to form a bias electric field in the modified region S1. The bias electrode 120 is formed so that the width t in the direction of rotation of the turntable 2 is smaller than the separation dimension d of adjoining wafers W, thus forming a bias electric field individually for each wafer W while preventing simultaneous application of the bias electric field to the adjoining wafers W.
摘要翻译：要解决的问题：为了在每个基板的表面中的凹部的深度方向上均匀地进行等离子体处理，当进行通过转台旋转的多个基板的等离子体处理时。偏置电极120是布置在转盘2的下侧面对变形区域S1的位置，并且法拉第屏蔽体95布置在改质区域S1的上侧。这些偏置电极120和法拉第屏蔽95被电容耦合以在修改区域S1中形成偏置电场。偏置电极120形成为使得转盘2的旋转方向上的宽度t小于相邻晶片W的分离尺寸d，从而为每个晶片W分别形成偏置电场，同时防止偏置的同时施加电场到相邻的晶片W.

2. 发明专利

JP2014120564A Deposition apparatus, substrate processing apparatus and deposition method 有权
标题翻译：沉积装置，基板加工装置和沉积方法
公开(公告)号：JP2014120564A
公开(公告)日：2014-06-30
申请号：JP2012273581
申请日：2012-12-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAWAKI JUN , KOSHIMIZU CHISHIO , YAMAZAWA YOHEI , TACHIBANA MITSUHIRO , KATO HISASHI , KOBAYASHI TAKESHI , MIURA SHIGEHIRO , KIMURA TAKAFUMI
IPC分类号： H01L21/31 , C23C16/56 , H05H1/46
CPC分类号： H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To perform plasma processing with high uniformity in the depth direction of a recess in the surface of a substrate, when performing plasma processing for a substrate revolving by a turntable.SOLUTION: An antenna 83 for generating capacitively-coupled plasma is provided on the upper side of a vacuum container 1, and a Faraday shield 95 for cutting off the electric field and passing the magnetic field of an electromagnetic field generated from the antenna 83 is disposed between the antenna 83 and a wafer W on a turntable 2. At a position on the lower side of the antenna 83 and on the lower side of the turntable 2, a lower bias electrode 120 is disposed, and a bias space S3 is formed between the Faraday shield 95 and the lower bias electrode 120.
摘要翻译：要解决的问题：在对基板旋转的基板进行等离子体处理时，在基板表面的凹部的深度方向上进行高均匀性的等离子体处理。解决方案：用于产生电容耦合等离子体的天线83 设置在真空容器1的上侧，并且用于切断电场并使从天线83产生的电磁场的磁场通过的法拉第屏蔽95设置在天线83和转台2上的晶片W之间在天线83的下侧的位置和转盘2的下侧设置有下偏置电极120，并且在法拉第屏蔽95和下偏置电极120之间形成偏置空间S3。

3. 发明专利

JP2014089876A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2014089876A
公开(公告)日：2014-05-15
申请号：JP2012238964
申请日：2012-10-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAZAWA YOHEI , YAMAWAKI JUN , KOSHIMIZU CHISHIO , KIMURA TAKAFUMI
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32183 , H05H2001/4652 , H05H2001/4682
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of reducing a power loss at a power feeding line and a matching unit.SOLUTION: A plasma processing apparatus includes a plurality of plasma processing units 3, a matching unit 4 for performing impedance matching between plasma loads of the plurality of plasma processing units 3 and a high-frequency power supply unit 2, and a power feeding unit 5 for feeding high-frequency power subjected to the impedance matching at the matching unit 4 to the plurality of plasma processing units 3. The power feeding unit 5 has an inductive coupling unit 6 for feeding the high-frequency power to each of the plurality of plasma processing units 3 by using inductive coupling. The inductive coupling unit 6 includes a linear primary-side power feeding rod 7 to which the high-frequency power is supplied from the high-frequency power supply unit 2 via an output of the matching unit 4, and a plurality of secondary-side coils 8 generating induced electromotive force by a high-frequency fluctuating magnetic flux generated around the primary-side power feeding rod 7, to supply an induced current generated by the induced electromotive force to each of the plurality of plasma processing units.
摘要翻译：要解决的问题：提供能够降低供电线和匹配单元的功率损耗的等离子体处理装置。解决方案：等离子体处理装置包括多个等离子体处理单元3，用于执行阻抗匹配的匹配单元4 在多个等离子体处理单元3的等离子体负载和高频电力供应单元2之间，以及供电单元5，用于将在匹配单元4进行阻抗匹配的高频电力馈送到多个等离子体处理单元馈电单元5具有电感耦合单元6，用于通过使用电感耦合将高频功率馈送到多个等离子体处理单元3中的每一个。电感耦合单元6包括线性一次侧供电杆7，经由匹配单元4的输出从高频电源单元2提供高频电力，并且多个次级侧线圈 8通过在一次侧馈电杆7周围产生的高频波动磁通产生感应电动势，以将由感应电动势产生的感应电流提供给多个等离子体处理单元中的每一个。

4. 发明专利

JP2012204582A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2012204582A
公开(公告)日：2012-10-22
申请号：JP2011067523
申请日：2011-03-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAWAKI JUN , KIMURA TAKAFUMI , KOSHIMIZU CHISHIO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32091 , H01J37/32669
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that eliminates influence of a vertical component of a magnetic field generated in a processing space by making the vertical component as small as possible, and thereby excellently controls a plasma density distribution in the processing space.SOLUTION: A plasma processing apparatus 10 which has a processing space S formed with a susceptor 12 and an upper electrode 23 arranged opposite to the susceptor 12 includes a magnetic field formation part which is arranged on the opposite side from the processing space S with respect to the upper electrode 23, and the magnetic field formation part has at least one magnetic force line generation unit 27 which includes a pair of annular magnet arrays 27a and 27b arranged concentrically in plan view on a surface of the upper electrode 23 on the opposite side from the processing space S, an angle θ1 contained between axes of magnets of the magnet arrays 27a and 27b of the magnetic force line generation unit 27 satisfying 0°
摘要翻译：要解决的问题：提供一种等离子体处理装置，其通过使垂直分量尽可能小地消除在处理空间中产生的磁场的垂直分量的影响，从而极好地控制在等离子体密度分布中的等离子体密度分布处理空间。解决方案：具有形成有与基座12相对的基座12和上电极23的处理空间S的等离子体处理装置10包括：设置在与处理空间S相反的一侧的磁场形成部相对于上电极23，磁场形成部具有至少一个磁力线生成单元27，该磁力线生成单元27包括一对在平面图中同心地布置在上电极23的表面上的环形磁体阵列27a和27b 处于与处理空间S相反的一侧，包含磁力线生成单元27的磁体阵列27a和27b的磁体轴线之间的角度θ1满足0°<θ1≤180°。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011119658A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2011119658A
公开(公告)日：2011-06-16
申请号：JP2010215113
申请日：2010-09-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAZAWA YOHEI , KOSHIMIZU CHISHIO , SAITO MASASHI , DENPO KAZUKI , YAMAWAKI JUN
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To freely and minutely control a plasma density distribution by using a simple correction coil in an inductively coupled plasma process. SOLUTION: An inductively coupled plasma processing apparatus is configured such that inductively coupled plasma is generated so as to have a doughnut shape under a dielectric window 52 close to an RF antenna 54 and the doughnut-shaped plasma is dispersed in a large processing space so as to level the plasma density near a susceptor 12 (namely, on a semiconductor wafer W). In order to radially equalize the plasma density distribution near the susceptor 12, electromagnetic field correction is applied to an RF magnetic field, generated by the RF antenna 54, by a correction coil 70 while the conduction duty ratio of the correction coil 70 is variable by a switching mechanism 110 according to the process conditions. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过在电感耦合等离子体工艺中使用简单的校正线圈来自由和精确地控制等离子体密度分布。解决方案：电感耦合等离子体处理装置被配置为使得感应耦合等离子体被产生，使得在接近RF天线54的电介质窗口52下具有环形形状，并且环形等离子体分散在大的加工空间，以便使基座12（即半导体晶片W）附近的等离子体密度平坦化。为了径向均衡基座12附近的等离子体密度分布，通过校正线圈70对由RF天线54产生的RF磁场进行电磁场校正，同时校正线圈70的导通占空比可由根据工艺条件的切换机构110。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2008251633A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2008251633A
公开(公告)日：2008-10-16
申请号：JP2007088054
申请日：2007-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIMIZU CHISHIO
IPC分类号： H01L21/3065 , C23C16/509
CPC分类号： H01J37/32559 , H01J37/32091 , H01J2237/022 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To effectively remove a depot entering a corner or a gap between steps facing a plasma space in a plasma treatment apparatus.
SOLUTION: A lower surface of an electrode support 60 protrudes downward from a lower surface of an electrode plate 48, that is, toward a susceptor 18 by several centimeters for example. The corner 62 is formed with an angle of approximately 90°, between a substantially horizontal lower surface 48a of the electrode plate 48 and a substantially perpendicular first vertical inner peripheral surface 60b of the electrode support 60. The gap 64 with a substantially constant interval is formed from between an outer peripheral surface 48b inclined by approximately 45° of the electrode plate 48, and an inner peripheral surface 60c inclined by approximately 45° of the electrode support 60 and between a vertical outer peripheral surface 48c of the electrode plate 48 and a second vertical outer peripheral surface 60d of the electrode support 60. Ions flying from a directly facing ion sheath corner SC slantly upward with an angle of approximately 45° enter the gap 64, as they are, from an entrance of the gap 64 into the inner part. If the depot attaches inside the gap 64, the ions scraped out from the gap 64 through ion sputtering.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了有效地移除在等离子体处理装置中面向等离子体空间的步骤之间进入角落的位置或间隙。解决方案：电极支撑件60的下表面从电极板48的下表面向下突出，例如朝向基座18几厘米。角部62形成为约90°的角度，电极板48的大致水平的下表面48a和电极支撑件60的基本垂直的第一垂直内周表面60b之间。间隔64具有基本恒定的间隔由电极板48的大约45°的外周面48b与电极支撑60的倾斜约45°的内周面60c之间以及电极板48的垂直外周面48c和电极支撑件60的第二垂直外周表面60d。从直接面对的离子鞘角SC以大约45°的角度向上倾斜的离子原样从间隙64的入口进入内部部分。如果储存库附着在间隙64内，则离子通过离子溅射从间隙64刮出。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008227063A Plasma treatment equipment and plasma distribution correcting method 有权
标题翻译：等离子体处理设备和等离子体分布校正方法
公开(公告)号：JP2008227063A
公开(公告)日：2008-09-25
申请号：JP2007061748
申请日：2007-03-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TANAKA SATOSHI , KOSHIMIZU CHISHIO , IWATA MANABU , MATSUMOTO NAOKI , ITO TORU
IPC分类号： H01L21/3065 , H05H1/00 , H05H1/46
CPC分类号： H01J37/32706 , H01J37/32091
摘要： PROBLEM TO BE SOLVED: To provide plasma treatment equipment which can be simplified in structure while preventing distortion of a sheath and can prevent attachment of particles to a substrate. SOLUTION: The plasma treatment equipment 10 comprises a chamber 11 for storing a waver W; electrostatic chuck 12 which is disposed inside the chamber 11 to place the wafer W on; focus ring 21 so disposed as to surround the peripheral edge of the wafer W placed on the electrostatic chuck 12; high-frequency power supply 16 arranged in a lower part of the equipment and supplies high-frequency power to the electrostatic chuck 12; CCD camera 37 for optically observing the distribution of thickness (plasma distribution) of the sheath inside the chamber 11; DC power supply 33 for the focus ring which applies negative DC voltage to the focus ring 21 via a low-pass filter 34, a feed rod 18, and the electrostatic chuck 12; and controller 38 for setting the value of the DC voltage to be applied based on the observed plasma distribution. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供等离子体处理设备，其可以简化结构，同时防止护套变形并且可以防止颗粒附着到基板上。解决方案：等离子体处理设备10包括用于存储摇摆W的室11; 静电吸盘12，其设置在室11内以将晶片W放置; 聚焦环21被布置为围绕放置在静电卡盘12上的晶片W的周缘; 设置在设备的下部的高频电源16，并向静电吸盘12供给高频电力; CCD摄像机37，用于光学观察室11内的护套的厚度（等离子体分布）分布; 用于经由低通滤波器34，馈送杆18和静电卡盘12向聚焦环21施加负DC电压的对焦环的直流电源33; 以及用于基于观察到的等离子体分布来设置要施加的DC电压的值的控制器38。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008216183A Device and method for measuring temperature 有权
标题翻译：用于测量温度的装置和方法
公开(公告)号：JP2008216183A
公开(公告)日：2008-09-18
申请号：JP2007057146
申请日：2007-03-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ABE ATSUSHI , MATSUDO TATSUO , KOSHIMIZU CHISHIO
IPC分类号： G01K11/12 , H01L21/66
CPC分类号： G01K11/125
摘要： PROBLEM TO BE SOLVED: To provide a device and method capable of securely performing a temperature detection by determining an interference waveform from each measurement point even when the number of measurement points is large so that precise and efficient substrate processing or the like can be performed.
SOLUTION: A controller 170 stores, as initial peak position data, the result in which the position of an interference peak when irradiating first to n-th measurement points of a temperature measurement object 10 with first to n-th measurement light beams is individually measured in advance for each of the first to n-th measurement points, and compares the position of the interference peak obtained when the temperature is measured with the initial peak position data to calculate the temperature for each of the first to n-th measurement points.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够通过确定来自每个测量点的干扰波形来安全地执行温度检测的装置和方法，即使当测量点的数量大时，使得精确和有效的衬底处理等可以被执行。解决方案：控制器170将第一至第n测量光束照射到温度测量对象10的第n个测量点的第一至第n测量点照射时的干扰峰值的位置作为初始峰值位置数据对于第一至第n测量点中的每一个预先单独地测量，并且将当测量温度获得的干扰峰值与初始峰值位置数据的位置进行比较，以计算第一至第n个测量点中的每一个的温度测量点。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007266536A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2007266536A
公开(公告)日：2007-10-11
申请号：JP2006092965
申请日：2006-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUMOTO NAOKI , HAYAKAWA YOSHINOBU , HANAOKA HIDETOSHI , KODAMA NORIAKI , KOSHIMIZU CHISHIO , IWATA MANABU , TANAKA SATOSHI
IPC分类号： H01L21/3065 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To improve in-plane uniformity of a process by equalizing or arbitrarily controlling the spatial distribution of density of plasma to be generated by capacitive-coupling high frequency discharge.
SOLUTION: A substrate W to be treated is placed on a susceptor 16 of a lower electrode, and high frequency for plasma formation is applied using a high-frequency power source 30. An upper electrode 34 to be arranged on the upper part of the susceptor 16 oppositely in parallel to the susceptor 16 is attached on a chamber 10 in a state of electrically floating via an annular insulator 35. A convex 37 protruding toward the susceptor 16 is formed on the center of the upper electrode 34.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过均衡或任意地控制通过电容耦合高频放电产生的等离子体的密度的空间分布来提高工艺的面内均匀性。解决方案：将待处理的基板W放置在下电极的基座16上，并且使用高频电源30施加用于等离子体形成的高频。上电极34布置在上电极基座16平行于基座16的基座16以经由环形绝缘体35电浮动的状态安装在腔室10上。朝向基座16突出的凸起37形成在上电极34的中心。
版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007184564A Method of measuring physical quantity of measurement object in substrate processing apparatus and storage medium 有权
标题翻译：测量基板处理装置和存储介质中测量对象物理量的方法
公开(公告)号：JP2007184564A
公开(公告)日：2007-07-19
申请号：JP2006328725
申请日：2006-12-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIMIZU CHISHIO , SUZUKI TOMOHIRO
IPC分类号： H01L21/3065 , G01K11/12
摘要： PROBLEM TO BE SOLVED: To provide a method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. SOLUTION: When a reference mirror 55 is moved in a direction away from a collimator fiber 52, a CPU 60 measures an interference position A and an interference position B at a timing A and a timing B, respectively, and calculates a difference D' between the interference position A at the timing A and the interference position B at the timing B. When the reference mirror 55 moved away from the collimator fiber 52 is moved in a direction toward the collimator fiber 52; the CPU 60 measures the interference position B and interference position A at a timing C and a timing D, respectively, calculates a difference D" between the interference position B at the timing C and the interference position A at the timing D, calculates an average value of the interference position difference D' and interference position difference D", obtains an optical path length difference from the average value, and calculates a wafer W temperature from the optical path length difference. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够精确地测量基板处理装置中的测量对象的物理量的方法。解决方案：当参考镜55沿远离准直光纤52的方向移动时，CPU60分别在定时A和定时B测量干扰位置A和干扰位置B，并计算出差异在定时A处的干涉位置A和定时B之间的干涉位置B之间的距离D'。当从准直光纤52移开的基准反射镜55沿着准直光纤52的方向移动时， CPU60分别在定时C和定时D测量干扰位置B和干扰位置A，计算定时C处的干扰位置B和定时D之间的干扰位置A之间的差D“，计算平均值干涉位置差D'和干涉位置差D“的值从平均值获得光程长度差，并根据光程长度差计算晶片W温度。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式