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1. 发明专利

JP2012138500A Method for forming silicon oxide film on tungsten film or tungsten oxide film and film forming device 审中-公开
标题翻译：在钨金属膜或氧化钨膜和薄膜形成装置上形成硅氧烷膜的方法
公开(公告)号：JP2012138500A
公开(公告)日：2012-07-19
申请号：JP2010290565
申请日：2010-12-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO JUN , CHOU PAO-HWA
IPC分类号： H01L21/316 , H01L21/28 , H01L21/336 , H01L21/768 , H01L23/532 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/02304 , C23C16/0272 , C23C16/0281 , C23C16/402 , C23C16/45525 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02299 , H01L21/02312
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film on a tungsten film or a tungsten oxide film capable of reducing incubation time of the silicon oxide film even if the silicon oxide film is formed on the tungsten film or the tungsten oxide film.SOLUTION: A method for forming a silicon oxide film on a tungsten film or a tungsten oxide film comprises: a step (step 1) of forming the tungsten film or the tungsten oxide film on a workpiece; a step (step 2) of forming a seed layer on the tungsten film or the tungsten oxide film; and a step (step 3) of forming the silicon oxide film on the seed layer. This method forms the seed layer on the tungsten film or the tungsten oxide film by heating the workpiece and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.
摘要翻译：要解决的问题：即使在钨膜上形成氧化硅膜，也可以在钨膜或氧化钨膜上形成氧化硅膜的方法，即使氧化硅膜形成在钨膜上也能够减少氧化硅膜的孵育时间氧化钨膜。解决方案：在钨膜或氧化钨膜上形成氧化硅膜的方法包括：在工件上形成钨膜或氧化钨膜的步骤（步骤1）在钨膜或氧化钨膜上形成种子层的工序（工序2）以及在种子层上形成氧化硅膜的步骤（步骤3）。该方法通过加热工件并将氨基硅烷基气体供应到钨膜或氧化钨膜的表面，在钨膜或氧化钨膜上形成籽晶层。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2009016814A Formation method of fine pattern 有权
标题翻译：精细图案的形成方法
公开(公告)号：JP2009016814A
公开(公告)日：2009-01-22
申请号：JP2008149271
申请日：2008-06-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAKAJIMA SHIGERU , HASEBE KAZUHIDE , CHOU PAO-HWA , IWASHITA MITSUAKI , SHINNO REIJI
IPC分类号： H01L21/3065 , H01L21/027 , H01L21/31 , H01L21/3213
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/3088 , H01L21/31608
摘要： PROBLEM TO BE SOLVED: To provide a formation method of a fine pattern capable of forming a fine pattern having a width smaller than a resolution limit by a small number of manufacturing processes. SOLUTION: In this formation method of a fine pattern, a thin film 102 is formed on a substrate 101; a resist film 103 is formed on the thin film 102; the resist film 103 is processed into patterns 103' having a predetermined interval by using a photolithography technique; and a silicon oxide film 105 different from the thin film 102 and the resist films 103' is formed on the processed resist films 103' and the thin film 102 by alternately supplying a source gas containing organic silicon and activated oxygen species. Sidewall spacers 105' are formed on sidewalls of the processed resist films 103' by retreating the silicon oxide film 105, and the thin film 102 is processed by removing the processed resist films 103' and using the sidewall spacers 105' as a mask. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够通过少量制造工艺形成宽度小于分辨率极限的精细图案的精细图案的形成方法。解决方案：在该精细图案的形成方法中，在基板101上形成薄膜102; 在薄膜102上形成抗蚀膜103; 通过使用光刻技术将抗蚀剂膜103加工成具有预定间隔的图案103'; 并且通过交替地供给含有有机硅和活性氧的源气体，在经处理的抗蚀剂膜103'和薄膜102上形成与薄膜102不同的氧化硅膜105和抗蚀膜103'。通过后退氧化硅膜105，在经处理的抗蚀剂膜103'的侧壁上形成侧壁间隔物105'，并且通过去除经处理的抗蚀剂膜103'并使用侧壁间隔物105'作为掩模来处理薄膜102。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008060455A Film forming method, film forming device, and memory medium 有权
标题翻译：膜形成方法，膜形成装置和记忆介质
公开(公告)号：JP2008060455A
公开(公告)日：2008-03-13
申请号：JP2006237558
申请日：2006-09-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , CHOU PAO-HWA , UMEZAWA KOUTAI , KADONAGA KENTARO , CHANG HAO-HSIANG
IPC分类号： H01L21/314 , C23C16/42 , C23C16/455 , H01L21/31
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： PROBLEM TO BE SOLVED: To provide a film forming method which can reduce an etching rate in a cleaning process to a relatively small rate even if a film is formed under a relatively low temperature, can improve film forming control in the cleaning process, and can form an insulating film that functions sufficiently as an etching stopper film, inter-layer insulating film, etc.
SOLUTION: According to the film forming method, a silane-based gas, a nitride gas, a boron-containing gas, and a hydrocarbon gas are supplied to a process container 4, in which a plurality of workpieces W are stored to be ready for vacuumizing, to form a thin SiBCN film on a surface of the workpiece W. The film forming method includes a simultaneous gas supply step of selecting and supplying either of the boron-containing gas and the hydrocarbon gas and also supplying the silane-based gas simultaneously, a nonselected gas supply step of supplying the other gas that is not selected at the simultaneous gas supply step, and a nitride gas supply step of supplying the nitride gas. These steps are repeated in increasing order.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使在相对低的温度下形成膜也能够将清洗过程中的蚀刻速率降低到相对较小的速率的成膜方法，可以改善清洗过程中的成膜控制可以形成作为蚀刻阻挡膜，层间绝缘膜等充分起作用的绝缘膜。解决方案：根据成膜方法，可以使用硅烷类气体，氮化物气体，含硼气体和烃气体被供给到处理容器4中，其中存储多个工件W以准备好真空，以在工件W的表面上形成薄的SiBCN膜。成膜方法包括同时选择供给含硼气体和烃气体的气体供给工序以及同时供给硅烷系气体的非选择气体供给工序，供给不同时气化的其他气体的非选择气体供给工序以及供给氮化物气体的氮化物气体供给工序。这些步骤以增加的顺序重复。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2006270016A Deposition method, deposition equipment and storage medium 有权
标题翻译：沉积方法，沉积设备和储存介质
公开(公告)号：JP2006270016A
公开(公告)日：2006-10-05
申请号：JP2005177344
申请日：2005-06-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , OKADA MITSUHIRO , CHOU PAO-HWA , KIN SAIKO , OGAWA ATSUSHI
IPC分类号： H01L21/318 , H01L29/78
CPC分类号： C23C16/45531 , C23C16/30 , C23C16/345 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/507
摘要： PROBLEM TO BE SOLVED: To provide a deposition method capable of forming an impurity containing silicon nitride film, in which a dielectric constant is very low and an etching resistance is sufficiently large. SOLUTION: In the deposition method; a silane-based gas, a nitriding gas, and an impurity containing gas are supplied into a processing container 4 which can draw vacuum to form a thin film composed of the impurity containing silicon nitride film on a surface of a processing body W. The silane-based gas and nitriding gas are alternately supplied, and also, the nitriding gas is activated by a plasma. Thus, the impurity containing silicon nitride film in which the dielectric constant is very low and the etching resistance is sufficiently large is formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够形成介电常数非常低且耐蚀刻性足够大的含有氮化硅膜的杂质的沉积方法。
解决方案：在沉积方法中; 将硅烷类气体，氮化气体和含杂质气体供给到可以在加工体W的表面形成由含有氮化硅膜的杂质构成的薄膜的真空吸收的处理容器4中。该硅烷的气体和氮化气体，并且氮化气体也被等离子体活化。因此，形成介电常数非常低并且耐腐蚀性足够大的含氮化硅膜的杂质。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2009016815A Formation method of fine pattern 有权
标题翻译：精细图案的形成方法
公开(公告)号：JP2009016815A
公开(公告)日：2009-01-22
申请号：JP2008149272
申请日：2008-06-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAKAJIMA SHIGERU , HASEBE KAZUHIDE , CHOU PAO-HWA , IWASHITA MITSUAKI , SHINNO REIJI
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide a formation method of a fine pattern capable of further improving CD uniformity of a fine pattern having a pitch smaller than a resolution limit.
SOLUTION: In this formation method, a source gas containing organic silicon, and activated oxygen species are alternately supplied on first resist patterns 103' and a thin film 102 to form a silicon oxide film 104 different from the thin film 102 and the first resist patterns 103'; a second resist film is formed on the silicon oxide film 104; the second resist film is processed into second resist patterns 105 having a predetermined pitch; and the thin film 102 is processed by using the first and second resist patterns 103' and 105' as a mask.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够进一步提高具有小于分辨率极限的间距的精细图案的CD均匀性的精细图案的形成方法。解决方案：在该形成方法中，在第一抗蚀剂图案103'和薄膜102上交替地供给含有有机硅和活性氧的源气体，以形成不同于薄膜102的氧化硅膜104和第一抗蚀剂图案103'; 在氧化硅膜104上形成第二抗蚀剂膜; 将第二抗蚀剂膜加工成具有预定间距的第二抗蚀剂图案105; 并且通过使用第一和第二抗蚀剂图案103'和105'作为掩模来处理薄膜102。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008306093A Deposition method and apparatus 有权
标题翻译：沉积方法和装置
公开(公告)号：JP2008306093A
公开(公告)日：2008-12-18
申请号：JP2007153735
申请日：2007-06-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NODERA NOBUTAKE , MATSUNAGA MASANOBU , HASEBE KAZUHIDE , UMEZAWA KOUTAI , CHOU PAO-HWA
IPC分类号： H01L21/318 , C23C16/34 , H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/3141
摘要： PROBLEM TO BE SOLVED: To provide a deposition method capable of forming a silicon nitride film having an excellent film quality with high insulating property and low etching rate while suppressing generation of particles, and having a high deposition rate. SOLUTION: There is provided a deposition method for performing deposition processing of forming a thin film composed of a silicon nitride film on a surface of a workpiece by supplying silane-based gas and nitride gas into a processing container 4 in which a plurality of workpieces W are accommodated and which can be vacuumized, wherein a silane-based gas supplying step of supplying the silane-based gas and a nitride gas supplying step of supplying nitride gas are alternately performed, and a nitride gas supplying step of generating plasma and a nitride gas supplying step not generating plasma are included in repeated plurality of nitride gas supplying steps. Thus, it is possible to form a silicon nitride film having high insulating property and low etching rate while suppressing generation of particles and having high deposition rate. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够形成具有优异的膜质量，具有高绝缘性和低蚀刻速率同时抑制颗粒的产生并且具有高沉积速率的氮化硅膜的沉积方法。解决方案：提供一种沉积方法，用于通过将硅烷类气体和氮化物气体供给到处理容器4中来进行在工件表面上形成由氮化硅膜构成的薄膜的沉积处理，其中多个的工件W被容纳并且可以被抽真空，其中交替地进行供给硅烷系气体的硅烷系气体供给工序和供给氮化物气体的氮化物气体供给工序，以及氮化物气体供给工序，在重复的多个氮化物气体供给步骤中包括不产生等离子体的氮化物气体供给步骤。因此，可以在抑制颗粒的产生并且具有高沉积速率的同时形成具有高绝缘性和低蚀刻速率的氮化硅膜。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008300662A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2008300662A
公开(公告)日：2008-12-11
申请号：JP2007145646
申请日：2007-05-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKASAKA YASUSHI , FUKIAGE NORIAKI , KATO YOSHIHIRO , HASEBE KAZUHIDE , CHOU PAO-HWA
IPC分类号： H01L21/336 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/823864 , H01L21/823814
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of stably giving desired characteristics to the semiconductor device from which a sidewall spacer is removed with excellent reproducibility and facilitating the management of manufacture processes as well.
SOLUTION: The sidewall spacer 10 is formed on the side face of a gate electrode 7, a pair of source and drain regions 14 of a second conductivity type are formed inside an active region 3, and a semiconductor layer 1, an element isolation region 4, the sidewall spacer 10 and the gate electrode 7 are covered with a metal film 18. The metal film 18 is made to react to the semiconductor layer 1 and the gate electrode 7, and the source and drain regions 14 and the gate electrode 7 are partially made low resistance. The non-reaction part of the metal film 18 and the sidewall spacer 10 are removed altogether using an etchant for not easily etching the element isolation region 4, the low resistance part 19 of the gate electrode and the low resistance part 19 of the source and drain regions 14 and for easily etching the non-reaction part of the metal film 18 and the sidewall spacer 10.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方案：提供一种能够以优异的再现性将半导体器件稳定地提供给去除了侧壁间隔物的半导体器件并且便于管理制造工艺的半导体器件的制造方法。解决方案：侧壁间隔件10形成在栅电极7的侧面上，在有源区3内形成第二导电类型的一对源极和漏极区域14，半导体层1，元件隔离区域4，侧壁间隔物10和栅极电极7被金属膜18覆盖。使金属膜18与半导体层1和栅电极7以及源极和漏极区域14以及栅极电极7被部分制成低电阻。使用蚀刻剂不易蚀刻元件隔离区域4，栅电极的低电阻部分19和源极的低电阻部分19，一起去除金属膜18和侧壁间隔物10的非反应部分，以及漏极区域14，并且用于容易地蚀刻金属膜18和侧壁间隔物10的非反应部分。版权所有：（C）2009，JPO＆INPIT

8. 发明专利

JP2008258210A Plasma processing method and storage medium 有权
标题翻译：等离子体处理方法和储存介质
公开(公告)号：JP2008258210A
公开(公告)日：2008-10-23
申请号：JP2007095753
申请日：2007-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： CHOU PAO-HWA , HASEBE KAZUHIDE
IPC分类号： H01L29/423 , H01L21/28 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide a technology for performing reduction treatment of oxides formed on the surface of an electrode or an interconnect composed of tungsten surely by active species produced by activating ammonia gas by plasma without forming a tungsten nitride film on the surface of tungsten.
SOLUTION: When reduction treatment is carried out using a vertical heat treatment apparatus provided, in a region deviating from the treatment atmosphere in a vertical processing container in the radial direction and facing the treatment atmosphere, with a plasma generation region formed along the treatment atmosphere, and plasma electrodes arranged oppositely while holding the plasma generation region and extending along the plasma generation region, the amount of ammonia gas supplied to the plasma generation region is set between 500-10,000 sccm, the high frequency being applied to the plasma generation region is set between 20-500 W, the pressure of treatment atmosphere is set below 13.3×10
2 Pa, and the treatment time is set between 1 sec and 10 min.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种技术，用于通过在等离子体上活化氨气而产生的活性物质确保在电极表面上形成的氧化物或由钨构成的互连物质进行还原处理，而不会在其上形成氮化钨膜钨表面。解决方案：当使用垂直热处理设备进行还原处理时，在垂直处理容器中在径向方向上偏离处理气氛并面向处理气氛的区域中，沿着沿着处理气氛和等离子体电极相对配置，同时保持等离子体产生区域并沿着等离子体产生区域延伸，供应到等离子体产生区域的氨气量设定在500-10,000sccm之间，高频被施加到等离子体产生区域设定在20-500W之间，处理气氛压力设定在13.3×10 2 Pa以下，处理时间设定在1秒-10分钟之间。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008021860A Processor and its cleaning method 有权
标题翻译：处理器及其清洁方法
公开(公告)号：JP2008021860A
公开(公告)日：2008-01-31
申请号：JP2006192991
申请日：2006-07-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： CHOU PAO-HWA , HASEBE KAZUHIDE
IPC分类号： H01L21/31 , B08B7/00 , C23C16/44 , H01L21/3065
CPC分类号： C23C16/452 , C23C16/345 , C23C16/4405
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method of a processor, by which an unnecessary thin film stuck to an inner wall is removed by sputter effect by plasma and occurrence of particles can remarkably be controlled at the time of plasma deposition in a post-process.
SOLUTION: The processor is provided with a vertical processing container 24, a holding means 32 which holds a plurality of workpieces W into the processing container, a plasma chamber 70 prepared along a container sidewall, a plasma gas supply means 48 for supplying plasma gas to the plasma chamber, a plasma forming means 72 for erecting plasma in the plasma chamber, and a heating means 100. The method for cleaning the processor can select a plasma deposition processing by an active species generated by plasma, and a deposition processing by heating in which plasma is not used. The cleaning processing is performed by generating plasma while cleaning gas for plasma making is supplied from the plasma gas supply means.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理器的清洁方法，通过该处理器的清洁方法，通过等离子体的溅射效应去除粘附在内壁上的不必要的薄膜，并且可以在等离子体沉积时显着地控制颗粒的发生后期处理。解决方案：处理器设置有垂直处理容器24，将多个工件W保持在处理容器中的保持装置32，沿着容器侧壁准备的等离子体室70，用于供应的等离子体气体供给装置48 等离子体气体到等离子体室，用于在等离子体室中竖立等离子体的等离子体形成装置72和加热装置100.用于清洁处理器的方法可以通过等离子体产生的活性物质和沉积处理来选择等离子体沉积处理通过不使用等离子体的加热。通过产生等离子体进行清洗处理，同时从等离子体气体供给装置供给用于等离子体制造的清洁气体。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2013179321A Deposition method and deposition device 有权
标题翻译：沉积方法和沉积装置
公开(公告)号：JP2013179321A
公开(公告)日：2013-09-09
申请号：JP2013084744
申请日：2013-04-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUNAGA MASANOBU , SUZUKI KEISUKE , CHO SAIKAKU , CHOU PAO-HWA , YONEZAWA MASAHITO , HASEGAWA MASAYUKI , HASEBE KAZUHIDE
IPC分类号： H01L21/318 , C23C16/42 , C23C16/52 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a deposition method for forming a silicon nitride film with successful film quality than in the conventional case by ALD.SOLUTION: In a deposition method for forming a product film consisting of a silicon nitride film in a processing container which can be held in a vacuum, ALC deposition processing is repeated for a plurality of times by using Si source gas and nitride gas, cleaning processing is performed, coating processing is performed, and then, the deposition processing is performed again. The coating processing is performed by thermal ALD for supplying the Si source gas and the nitride gas without making them into plasma.
摘要翻译：要解决的问题：提供一种用于形成成膜质量的氮化硅膜的沉积方法，其比常规情况通过ALD。在一种用于在处理容器中形成由氮化硅膜构成的产品膜的沉积方法中，可以保持在真空中，通过使用Si源气体和氮化物气体来重复多次ALC沉积处理，进行清洗处理，进行涂布处理，然后再次进行沉积处理。涂层处理由用于供应Si源气体和氮化物气体的热ALD进行而不使其进入等离子体。

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