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1. 发明专利

JP2006041482A Oxidation method of material to be treated, oxidation apparatus, and storage medium 有权
标题翻译：待处理材料的氧化方法，氧化装置和储存介质
公开(公告)号：JP2006041482A
公开(公告)日：2006-02-09
申请号：JP2005141402
申请日：2005-05-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUZUKI KEISUKE , AOKI KIMIYA , UMEZAWA KOUTAI , MATTHES THOMAS , WELLHAUSEN UWE , DYROFF NORBERT
IPC分类号： H01L21/316 , H01L21/76
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/31662 , H01L21/76235
摘要： PROBLEM TO BE SOLVED: To provide an oxidation method of a material to be treated in which generation of a facet is prevented by rounding a corner of a bottom in addition to a corner of a shoulder of a trench so that the corners are formed into a shape of a curved surface.
SOLUTION: In an oxidation method of a material to be treated; in which a material to be treated W, on the surface of which trenches 4 are formed, is stored in a treatment chamber 22 that is allowed to be evacuated, then an oxidizing gas and a reducing gas are supplied into the treatment chamber, and then a surface of the material to be treated is oxidized in an atmosphere having oxygen activated species and hydroxyl activated species generated by reacting both of the gases; temperature within the treatment chamber is set to be 900°C or lower during the oxidation. Thus, a corner of a bottom is rounded in addition to a corner of a shoulder of a trench, thereby generation of a facet is prevented.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供除了沟槽的肩部的角部之外，通过使底部的角部四舍五入来防止产生小面的材料的氧化方法，使得角部为形成为曲面的形状。解决方案：在待处理材料的氧化方法中，其中待处理的材料W在其表面上形成沟槽4被储存在允许抽真空的处理室22中，然后将氧化气体和还原气体供应到处理室中，然后待处理材料的表面在具有氧活化物质的气氛中氧化，并且通过使两种气体反应产生羟基活化物质; 在氧化期间将处理室内的温度设定为900℃以下。因此，除了沟槽的肩部的角部之外，底部的角部是圆形的，从而防止了小面的产生。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008306093A Deposition method and apparatus 有权
标题翻译：沉积方法和装置
公开(公告)号：JP2008306093A
公开(公告)日：2008-12-18
申请号：JP2007153735
申请日：2007-06-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NODERA NOBUTAKE , MATSUNAGA MASANOBU , HASEBE KAZUHIDE , UMEZAWA KOUTAI , CHOU PAO-HWA
IPC分类号： H01L21/318 , C23C16/34 , H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/3141
摘要： PROBLEM TO BE SOLVED: To provide a deposition method capable of forming a silicon nitride film having an excellent film quality with high insulating property and low etching rate while suppressing generation of particles, and having a high deposition rate. SOLUTION: There is provided a deposition method for performing deposition processing of forming a thin film composed of a silicon nitride film on a surface of a workpiece by supplying silane-based gas and nitride gas into a processing container 4 in which a plurality of workpieces W are accommodated and which can be vacuumized, wherein a silane-based gas supplying step of supplying the silane-based gas and a nitride gas supplying step of supplying nitride gas are alternately performed, and a nitride gas supplying step of generating plasma and a nitride gas supplying step not generating plasma are included in repeated plurality of nitride gas supplying steps. Thus, it is possible to form a silicon nitride film having high insulating property and low etching rate while suppressing generation of particles and having high deposition rate. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够形成具有优异的膜质量，具有高绝缘性和低蚀刻速率同时抑制颗粒的产生并且具有高沉积速率的氮化硅膜的沉积方法。解决方案：提供一种沉积方法，用于通过将硅烷类气体和氮化物气体供给到处理容器4中来进行在工件表面上形成由氮化硅膜构成的薄膜的沉积处理，其中多个的工件W被容纳并且可以被抽真空，其中交替地进行供给硅烷系气体的硅烷系气体供给工序和供给氮化物气体的氮化物气体供给工序，以及氮化物气体供给工序，在重复的多个氮化物气体供给步骤中包括不产生等离子体的氮化物气体供给步骤。因此，可以在抑制颗粒的产生并且具有高沉积速率的同时形成具有高绝缘性和低蚀刻速率的氮化硅膜。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008227454A Treatment method and treatment apparatus of substance to be treated 有权
标题翻译：处理物质的处理方法和处理装置
公开(公告)号：JP2008227454A
公开(公告)日：2008-09-25
申请号：JP2007315255
申请日：2007-12-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEUCHI TOSHIYUKI , UMEZAWA KOUTAI , SHIBATA TETSUYA
IPC分类号： H01L21/316 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a treatment method of a substance to be treated, in which electric membranous property can be greatly improved by performing annealing treatment to an oxide film or an oxynitride film in atmosphere of active species of ozone or oxidized gas. SOLUTION: In the treatment method of the substance to be treated for performing heat treatment to the substance to be treated within a treatment container 4, made vacuum possible, which accommodates a plurality of the substances W to be treated arranged at a predetermined pitch, the method has an oxidizing step of forming an oxide film by oxidizing the surface of the substance to be treated in the atmosphere which has oxygen active species and hydroxyl group active species generated by reacting oxidized gas with reducing gas within the treatment container; and an annealing step of annealing by heating the oxide film in the atmosphere of active species of ozone or oxidized gas. Therefore, electric membranous property is greatly improved. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理物质的处理方法，其中通过对臭氧活性物质或氧化物的气氛中的氧化膜或氧氮化物膜进行退火处理可以大大提高电膜性能加油站。解决方案：在处理容器4内对待处理物质进行热处理的待处理物质的处理方法中，可以将能够以预定的方式排列的待处理的多个物质W 该方法具有氧化步骤，通过在处理容器内将氧化气体与还原气体反应产生的具有氧活性物质和羟基活性物质的气氛氧化待处理物质的表面，形成氧化膜; 以及通过在臭氧或氧化气体的活性种类的气氛中加热氧化膜进行退火的退火步骤。因此，电膜性能大大提高。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005268755A Method of oxidizing workpiece, oxidation apparatus, and storage medium 有权
标题翻译：氧化工艺，氧化装置和储存介质的方法
公开(公告)号：JP2005268755A
公开(公告)日：2005-09-29
申请号：JP2005009631
申请日：2005-01-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUZUKI KEISUKE , IKEUCHI TOSHIYUKI , UMEZAWA KOUTAI
IPC分类号： H01L21/31 , H01L21/00 , H01L21/316 , H01L21/677
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： PROBLEM TO BE SOLVED: To provide a method of oxidizing workpieces capable of maintaining high uniformity of the film thickness of the oxide film among the workpieces.
SOLUTION: The method of oxidizing workpieces is to accommodate a plurality of the workpieces W in a processing vessel 22 having a prescribed length and capable of being evacuated and to oxidize the surface of the workpieces in an atmosphere possessing activated oxygen species and activated hydroxyl-group species, which are generated by the reaction between an oxidizing gas and a reducing gas supplied to the processing vessel. The oxidizing gas can be supplied from one end of the longitudinal direction of the processing vessel, while the reducing gas can be supplied from a plurality of gas-injection nozzles located at different positions in the longitudinal direction of the processing vessel. The reducing gas is supplied from a nozzle that is selected out of the gas-injection nozzles in accordance with the accommodating number and the accommodating positions of the workpieces inside the processing vessel. Therefore, the uniformity of the film thickness of the oxide film among the workpieces is maintained high.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够保持工件之间氧化膜的膜厚度的高均匀性的工件氧化方法。解决方案：氧化工件的方法是在具有规定长度的处理容器22中容纳多个工件W，并且能够在具有活性氧物质的气氛中被排空并氧化工件的表面并且被激活由氧化气体和供给到处理容器的还原气体之间的反应产生的羟基物质。氧化气体可以从处理容器的长度方向的一端供给，而还原气体可以从位于处理容器的纵向方向上的不同位置的多个气体喷射喷嘴供给。还原气体根据在处理容器内的工件的容纳数量和容纳位置从从气体喷射嘴中选出的喷嘴供给。因此，工件之间的氧化膜的膜厚均匀性保持较高。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005175441A Method of oxidizing workpiece and oxidizing device 有权
标题翻译：氧化工艺和氧化装置的方法
公开(公告)号：JP2005175441A
公开(公告)日：2005-06-30
申请号：JP2004307295
申请日：2004-10-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , UMEZAWA KOUTAI , TAKAHASHI YUTAKA
IPC分类号： H01L21/31 , H01L21/00 , H01L21/316
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a method of oxidizing workpieces capable of improving the wafer to wafer uniformity of the film thickness of an oxide film that is formed.
SOLUTION: In a workpiece oxidizing method for oxidizing the surface of the workpiece in an atmosphere having an active oxygen species and an active hydroxyl species generated by supplying an oxidizing gas and a reducing gas into a treating container 22 storing a plurality of workpieces W that are arranged in a predetermined pitch and permitting evacuation, so as to react both of the gases, at least either one gas of the oxidizing gas and the reducing gas is jetted and supplied to at least the upstream area S1, the downstream area S3, and the midstream area S2 of the gas flow flowing through the storage region S storing the workpieces.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够将晶片氧化的工件氧化成所形成的氧化膜的膜厚度的均匀性的方法。解决方案：在通过将氧化剂气体和还原气体供给到存储有多个工件的处理容器22中产生的活性氧和活性羟基的气氛中对工件的表面进行氧化的工件氧化方法中， W，以预定间距排列并允许抽真空，以使两种气体反应，将至少一种氧化性气体和还原性气体的气体喷射并供给到至少上游区域S1，下游区域S3 以及流过存储工件的存储区域S的气流的中游区域S2。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004152996A Apparatus and method for heat treatment 有权
公开(公告)号：JP2004152996A
公开(公告)日：2004-05-27
申请号：JP2002316377
申请日：2002-10-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJITA TAKEHIKO , OKADA MITSUHIRO , UMEZAWA KOUTAI , HASEBE KAZUHIDE , SAKAMOTO KOICHI
IPC分类号： C23C16/46 , C23C16/52 , F27B17/00 , H01L21/00 , H01L21/205
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To make the qualities of a thin film all the same among batches despite the difference in the number of product substrates processed in each batch when the substrates are heat-treated by one batch processing.
SOLUTION: When forming a thin film by CVD using, for example, two kinds of deposition gases, various numbers of product substrates to be processed in one batch (batch size) are set. Then, for each batch size, various total flow rates of the deposition gases are set with a ratio of the flow rates between the two deposition gases being fixed in each batch size, and then such a total flow rate is determined for each batch size that makes deposition rates all the same among the different batch sizes. Data on the relationship between the batch size and the total flow rate are stored in a storage section. When actually carrying out a heat treatment, the total flow rate in accordance with the batch size is found from the data, and the flow rates of the deposition gases are so controlled that the total flow rate of the deposition gases conforms to the selected one, and then the heat treatment is carried out.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2009027182A Treatment device and gas supply unit 有权
标题翻译：处理装置和气体供应单元
公开(公告)号：JP2009027182A
公开(公告)日：2009-02-05
申请号：JP2008232404
申请日：2008-09-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOMITA MASAHIKO , UMEZAWA KOUTAI , SON AKIRA , NISHIMURA TOSHIHARU
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/4405 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method capable of removing impurity metal, particularly copper from the surface of a quartz-made composition member without causing a large increase in equipment cost by using an oxidizing gas and a reducing gas.
SOLUTION: In the method for cleaning this treatment device designed to perform predetermined treatment on a treated object where at least one out of each composition member is formed of quarts, the treatment device includes a treatment container 4 arranged so that evacuation is possible, a support means 6 that supports the treated object in the treatment container, a heating means 24 that heats the treated object, a gas supply means 28 that supplies a predetermined gas to the treatment container wherein the oxidizing gas and the reducing gas are supplied to the treatment container to clean the quartz-made composition member by making both the gases react with each other.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够从石英组合物表面除去杂质金属，特别是铜的清洗方法，而不会通过使用氧化气体和还原气体而造成设备成本的大幅提高。解决方案：在这种处理装置的清洁方法中，处理装置被设计成对处理对象进行预定处理，其中每个组合构件中的至少一个由石英形成，处理装置包括处理容器4，该处理容器4布置成可以排空，支撑装置6，其支撑处理容器中的处理物体，加热装置24，其加热被处理物体;气体供应装置28，其向处理容器提供预定的气体，其中氧化气体和还原气体被供应到所述处理容器通过使所述气体彼此反应来清洁所述石英组合物构件。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008311605A Processing apparatus, method for cleaning the same, and storage medium 有权
标题翻译：加工设备，清洁方法和储存介质
公开(公告)号：JP2008311605A
公开(公告)日：2008-12-25
申请号：JP2007264916
申请日：2007-10-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOMITA MASAHIKO , UMEZAWA KOUTAI , SON AKIRA , NISHIMURA TOSHIHARU
IPC分类号： H01L21/31 , C23C16/44 , H01L21/22
CPC分类号： C23C16/4405 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method by which impurity metals, especially copper, can be removed from a surface of a quartz-component of a processing apparatus by using an oxidizing gas and a reducing gas without incurring a large increase in apparatus cost.
SOLUTION: The processing apparatus performs a predetermined processing of a workpiece by including: a vacuumizable processing vessel 4; a support means 6 for supporting the workpiece in the processing vessel; a heating means 24 for heating the workpiece; and a gas supply means 28 for supplying a predetermined gas into the processing vessel, wherein at least one of the components are made of quartz. In the method for cleaning the processing apparatus, the component made of quartz is cleaned by supplying the oxidizing gas and the reducing gas and making both the gases react with each other.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种清洁方法，通过使用氧化气体和还原气体，可以从加工设备的石英组分的表面除去杂质金属，特别是铜，而不会引起大的增加在设备成本。解决方案：处理装置通过包括：可抽真空处理容器4执行工件的预定处理; 用于将工件支撑在处理容器中的支撑装置6; 用于加热工件的加热装置24; 以及用于将预定气体供应到处理容器中的气体供给装置28，其中至少一个部件由石英制成。在清洗处理装置的方法中，通过供给氧化气体和还原气体并使气体彼此反应来清洗由石英制成的部件。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2007071200A Evacuating device and method, and substrate processing apparatus and method 有权
标题翻译：改进装置和方法以及基板处理装置和方法
公开(公告)号：JP2007071200A
公开(公告)日：2007-03-22
申请号：JP2006201030
申请日：2006-07-24
申请人： Ebara Corp , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社荏原製作所
发明人： ISHII KATSUTOSHI , NAKAO MASARU , ASANO TAKAYASU , UMEZAWA KOUTAI , OGAMINO HIROAKI , URATA TADASHI , USUI KATSUAKI , INOUE MASASHI , SEKIGUCHI SHINICHI , YAMAZAKI HIRONOBU
IPC分类号： F04B37/16 , C23C16/52 , H01L21/205
CPC分类号： F04D19/042 , F04D27/0261
摘要： PROBLEM TO BE SOLVED: To provide an evacuating device performing pressure control capable of bringing pressure in a process chamber to target pressure in a short period of time without causing a vacuum pump overload, regardless of a process reaction condition. SOLUTION: An evacuating device 2 comprises vacuum pumps 4, 5 for exhausting a gas G 2 in the process chamber 21 into which a process gas G 1 is introduced and in which a process reaction is performed, to form a vacuum in the process chamber 21 ; and a control means 6 for performing a first control that regulates the rotational speed of the vacuum pumps 4, 5 such that a pressure condition in the process chamber 21 reaches a pressure condition suitable for the process reaction during the process reaction, wherein said control means 6 calculates a specified rotational speed of the vacuum pumps 4, 5 based on process information related to the process reaction, and performs a second control that brings the vacuum pumps 4, 5 to the specified rotational speed before said first control. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种排气装置，其执行压力控制，其能够在不会导致真空泵过载的情况下将处理室中的压力在短时间内施加到目标压力，而不管处理反应条件如何。解决方案：排气装置2包括用于排出处理室21中的气体G 2的真空泵4,5，其中引入处理气体G 1并进行处理反应，以在其中形成真空处理室21; 以及控制装置6，用于执行调节真空泵4,5的旋转速度的第一控制，使得处理室21中的压力条件达到适于处理反应期间的处理反应的压力条件，其中所述控制装置图6基于与处理反应相关的处理信息计算真空泵4,5的指定转速，并且执行使真空泵4,5在所述第一控制之前达到规定转速的第二控制。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006173236A Method and device for forming silicon acid nitride film, and program 有权
标题翻译：用于形成硅酸钠膜的方法和装置，以及程序
公开(公告)号：JP2006173236A
公开(公告)日：2006-06-29
申请号：JP2004361108
申请日：2004-12-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOMITA MASAHIKO , SHIBATA TETSUYA , TAKAHASHI YUTAKA , UMEZAWA KOUTAI
IPC分类号： H01L21/31 , H01L21/318
CPC分类号： H01L21/3144
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming a silicon acid nitride film, and a program by which a silicon acid nitride film with a desired nitrogen concentration can be continuously and stably formed.
SOLUTION: Ammonia is activated by being applied into a reaction tube 2 heated at least to 600 °C. The surface of a material in the reaction tube 2 is nitrided until it is almost saturated by the activated ammonia. Continuously, a silicon oxide film is formed at a semiconductor wafer W. The silicon acid nitride film is formed by nitriding the formed silicon oxide film.
COPYRIGHT: (C)2006,JPO&NCIPI

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