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1. 发明专利

JP2012147020A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2012147020A
公开(公告)日：2012-08-02
申请号：JP2012085189
申请日：2012-04-04
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , WATANABE HIDEKI , KODA RINTARO , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a bi-section-type GaN-based semiconductor laser device with a configuration and a structure having a little occurrence of damage in a saturable absorption region.SOLUTION: A semiconductor laser device includes a stack of a second compound semiconductor layer and a third compound semiconductor layer constituting a light-emitting region and a saturable absorption region, and has a stacked structure having a ridge stripe structure, a second electrode, and a first electrode. The second electrode is isolated by an isolation trench into a first portion passing a DC current into the light-emitting region and a second portion for applying electric field to the saturable absorption region. On both sides of the ridge stripe structure, second compound semiconductor layer exposed regions are provided. 1
摘要翻译：解决的问题：提供具有在可饱和吸收区域中几乎没有损伤的结构和结构的双截面型GaN基半导体激光器件。解决方案：半导体激光器件包括构成发光区域和可饱和吸收区域的第二化合物半导体层和第三化合物半导体层的堆叠，并且具有脊条结构的层叠结构，第二电极，和第一电极。第二电极通过隔离沟槽隔离成通过DC电流进入发光区域的第一部分和用于向饱和吸收区域施加电场的第二部分。在脊状条纹结构的两侧设置有第二化合物半导体层露出区域。 1 2 / L 1-ave ，其中L 1-ave < / SB>表示构成发光区域的第三化合物半导体层的一部分与第二化合物半导体层露出区域的顶面的平均距离，L 2 表示在第二电极和隔离沟槽的第二部分之间的边界处从第三化合物半导体层的部分到第二化合物半导体层暴露区域的顶表面的距离。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012015265A Alignment method of semiconductor optical amplifier and optical output device 有权
标题翻译：半导体光放大器和光输出装置的对准方法
公开(公告)号：JP2012015265A
公开(公告)日：2012-01-19
申请号：JP2010149344
申请日：2010-06-30
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KODA RINTARO , KURAMOTO MASARU , MIYAJIMA TAKAO , YOKOYAMA HIROYUKI
IPC分类号： H01S5/50 , H01S5/343
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： PROBLEM TO BE SOLVED: To provide an alignment method of a semiconductor optical amplifier capable of performing optimization of coupling efficiency of incident laser light and an optical waveguide of the semiconductor optical amplifier independently from an external monitoring device.SOLUTION: In an alignment method of a semiconductor optical amplifier 200 in which laser light from a laser light source 100 is optical-amplified and emitted, current of a predetermined value is applied to the semiconductor optical amplifier 200 while the laser light from the laser light source 100 is incident on the semiconductor optical amplifier 200, and the relative position of the semiconductor optical amplifier 200 for the laser light incident on the semiconductor optical amplifier 200 is adjusted so as to maximize the voltage applied to the semiconductor optical amplifier 200.
摘要翻译：要解决的问题：提供一种能够独立于外部监视装置来实现能够优选入射激光的耦合效率和半导体光放大器的光波导的半导体光放大器的对准方法。解决方案：在半导体光放大器200的对准方法中，其中来自激光光源100的激光被光放大和发射，预定值的电流被施加到半导体光放大器200，同时来自激光光源100入射到半导体光放大器200上，并且调整入射在半导体光放大器200上的激光的半导体光放大器200的相对位置，以使施加到半导体光放大器200的电压最大化（C）2012年，JPO＆INPIT

3. 发明专利

JP2011187579A Mode-locked semiconductor laser element and driving method thereof 审中-公开
标题翻译：模式锁定半导体激光元件及其驱动方法
公开(公告)号：JP2011187579A
公开(公告)日：2011-09-22
申请号：JP2010049749
申请日：2010-03-05
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , IKEDA MASAO , MIYAJIMA TAKAO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
摘要： PROBLEM TO BE SOLVED: To provide a driving method of a mode-locked semiconductor laser element, having a structure for reducing the influence due to piezo polarization and spontaneous polarization. SOLUTION: The mode-locked semiconductor laser element includes a laminated structure, obtained by sequentially laminating a first compound semiconductor layer 30 formed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light emitting region 41 and a second compound semiconductor 50; a second electrode 62; and a first electrode 61. The laminated structure is formed on a compound semiconductor substrate 21 having polarity; the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer; the thickness of the well layer is 1 to 10 nm and impurity doping concentration of the barrier layer is 2×10 18 through 1×10 20 cm -3 ; and in the driving method of the mode-locked semiconductor laser element, current is made to flow to the first electrode 61 from the second electrode 62 via the laminated structure, and thus an optical pulse can be generated in the light emitting region 41. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种具有减少由于压电极化和自发极化引起的影响的结构的锁模半导体激光元件的驱动方法。解锁方案：锁模半导体激光元件包括层叠结构，其通过依次层叠由GaN基化合物半导体形成的第一化合物半导体层30，具有发光区域41的第三化合物半导体层40和第二化合物半导体50; 第二电极62; 和第一电极61.层叠结构形成在具有极性的化合物半导体基板21上; 第三化合物半导体层包括具有阱层和阻挡层的量子阱结构; 阱层的厚度为1〜10nm，阻挡层的杂质掺杂浓度为2×10 18 20×SP> / SP>; 并且在锁模半导体激光元件的驱动方法中，电流通过层叠结构从第二电极62流向第一电极61，因此可以在发光区域41中产生光脉冲。 P>版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011018784A Semiconductor laser element, driving method thereof, and semiconductor laser device 审中-公开
标题翻译：半导体激光元件及其驱动方法及半导体激光器件
公开(公告)号：JP2011018784A
公开(公告)日：2011-01-27
申请号：JP2009162617
申请日：2009-07-09
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： KURAMOTO MASARU , OKI TOMOYUKI , SUGAWARA TOMOYA , YOKOYAMA HIROYUKI
IPC分类号： H01S5/343
CPC分类号： H01S5/06216 , B82Y20/00 , H01S5/0602 , H01S5/06253 , H01S5/2009 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element of ultra short pulse and ultra high output, capable of emitting the pulse laser beam having higher peak power notwithstanding simple configuration and structure.SOLUTION: The semiconductor laser element includes (A) a laminated structure including a first compound semiconductor layer 30 containing n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing p-type impurity, (B) a first electrode 61 connected electrically to the first compound semiconductor layer 30, and (C) a second electrode 62 connected electrically to the second compound semiconductor layer 50. The second compound semiconductor layer 50 is provided with an electron barrier layer 53 whose thickness is 1.5×10m or greater. The semiconductor laser element is driven by the pulse current having a value ten times or more of threshold current.
摘要翻译：要解决的问题：为了提供超短脉冲和超高输出的半导体激光元件，能够发射具有较高峰值功率的脉冲激光束，尽管结构简单和结构简单。解决方案：半导体激光元件包括（A）层压结构包括含有n型杂质的第一化合物半导体层30，具有量子阱结构的有源层40和含有p型杂质的第二化合物半导体层50，（B）与第一化合物半导体电连接的第一电极61 层30，以及（C）与第二化合物半导体层50电连接的第二电极62.第二化合物半导体层50设置有厚度为1.5×10μm以上的电子势垒层53。半导体激光元件由阈值电流的十倍以上的脉冲电流驱动。

5. 发明专利

JP2010153430A Semiconductor laser, method of manufacturing semiconductor laser, optical disk device, and optical pickup 审中-公开
标题翻译：半导体激光器，制造半导体激光器的方法，光盘装置和光学拾取
公开(公告)号：JP2010153430A
公开(公告)日：2010-07-08
申请号：JP2008327173
申请日：2008-12-24
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OTA MAKOTO , YOKOYAMA HIROYUKI , KURAMOTO MASARU , IKEDA MASAO
IPC分类号： H01S5/22 , G11B7/125 , G11B7/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser which can perform sufficiently powerful self-pulsation operation without making the shape of a far-field image worse and stably obtain low-noise laser light, and is easily manufactured. SOLUTION: The self-pulsation semiconductor laser having a ridge stripe 11 in a clad layer has high-resistance regions 14 formed by ion implantation etc., at parts nearby both side surfaces of a center part of a ridge stripe 11 in a resonator-length direction. The high-resistance regions 14 operate as current restriction regions and the ridge stripe 11 at the parts where the high-resistance regions 14 are formed includes a part between the high-resistance regions 14 as a current injection region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以执行足够强大的自脉动操作而不使远场图像的形状更差并且稳定地获得低噪声激光的半导体激光器，并且容易制造。解决方案：在包层中具有脊条11的自脉动半导体激光器具有通过离子注入等形成的高电阻区域14，在脊条11的中心部分的两侧表面附近的部分谐振器长度方向。高电阻区域14作为电流限制区域工作，并且形成高电阻区域14的部分处的脊条11包括作为电流注入区域的高电阻区域14之间的部分。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2014078753A Mode-lock semiconductor laser element and semiconductor laser device assembly 审中-公开
标题翻译：模式半导体激光元件和半导体激光器件组件
公开(公告)号：JP2014078753A
公开(公告)日：2014-05-01
申请号：JP2014000846
申请日：2014-01-07
申请人： Sony Corp , ソニー株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , IKEDA MASAO , MIYAJIMA TAKAO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065 , H01S5/14 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a drive method of a mode-lock semiconductor laser element having a configuration capable of reducing influences of piezo polarization and spontaneous polarization.SOLUTION: The mode-lock semiconductor laser element has a laminate structure which includes: a first compound semiconductor layer 30 of a GaN compound semiconductor; a third compound semiconductor layer 40 having a light emitting region 41 and a saturable absorption region 42; and a second compound semiconductor layer 50 which are laminated in order; and a second electrode 62 and a first electrode 61. The second electrode 62 is separated into a first portion 62A and a second portion 62B by a separation groove 62C. When a current flows from a first portion of the second electrode to a first electrode via the light emitting region, the second electrode 62 gets into a forward bias state; and when a voltage is applied across the first electrode and the second portion of the second electrode, an electric field is applied to a saturable absorption region. Thus, the semiconductor laser element performs a single mode self-pulsation operation in the light emitting region.
摘要翻译：要解决的问题：提供具有能够减少压电极化和自发极化的影响的结构的锁模半导体激光元件的驱动方法。解锁：锁模半导体激光元件具有层叠结构，其包括：第一 GaN化合物半导体的化合物半导体层30; 具有发光区域41和可饱和吸收区域42的第三化合物半导体层40; 和第二化合物半导体层50; 第二电极62和第一电极61.第二电极62通过分离槽62C分离成第一部分62A和第二部分62B。当电流从第二电极的第一部分经由发光区域流过第一电极时，第二电极62进入正向偏压状态; 并且当跨越第一电极和第二电极的第二部分施加电压时，电场被施加到可饱和吸收区域。因此，半导体激光元件在发光区域中进行单模式自脉动操作。

7. 发明专利

JP2011119630A Optical device 审中-公开
标题翻译：光学装置
公开(公告)号：JP2011119630A
公开(公告)日：2011-06-16
申请号：JP2010045394
申请日：2010-03-02
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： MIYAJIMA TAKAO , KODA RINTARO , WATANABE HIDEKI , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/022
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0021 , H01S5/005 , H01S5/02212 , H01S5/02288 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/1085 , H01S5/14 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S5/4006
摘要： PROBLEM TO BE SOLVED: To provide an optical device suppressing changes in a drive current and an optical output over time. SOLUTION: An optical amplifying element 20 on a stem 10 is called transmissive SOA and is adapted to amplify short-wavelength light incoming into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an antireflection film on the surface thereof. The optical amplifying element 20 is sealed by a stem 10 and a cap 30. Light transmission windows 32 are provided with the cap 30 in the opposite part of the incidence side end face 20A and the injection side end face 20B, respectively. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制驱动电流和光输出随时间变化的光学装置。解决方案：杆10上的光放大元件20被称为透射SOA，并且适于放大入射到入射侧端面20A中的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光面20B。光放大元件20的入射侧端面20A和注入侧端面20B都在其表面上具有防反射膜。光学放大元件20由杆10和盖30密封。透光窗32在入射侧端面20A和注入侧端面20B的相对部分分别设置有盖30。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010205810A Method of driving semiconductor laser element, and semiconductor laser device 审中-公开
标题翻译：驱动半导体激光元件的方法和半导体激光器件
公开(公告)号：JP2010205810A
公开(公告)日：2010-09-16
申请号：JP2009047617
申请日：2009-03-02
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： YOKOYAMA HIROYUKI , KONO SHUNSUKE , OKI TOMOYUKI , IKEDA MASAO
IPC分类号： H01S5/04
CPC分类号： H01S5/4006 , B82Y20/00 , H01S5/0428 , H01S5/06216 , H01S5/0658 , H01S5/14 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a method of driving an ultrashort pulse/ultrahigh power semiconductor laser element having a simple composition and structure.
SOLUTION: In the method of driving the semiconductor laser element, light is injected from a light injection means 10 into the semiconductor laser element 20 driven by a pulse current having a value 10 or more times as large as a value of a threshold current, or the light is injected from the light injection means 10 into the semiconductor laser element 20 driven by a pulse voltage having a value twice or more as large as a value of a threshold voltage.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种驱动具有简单组成和结构的超短脉冲/超高功率半导体激光元件的方法。解决方案：在驱动半导体激光器元件的方法中，光从光注入装置10注入半导体激光器元件20，该脉冲电流的值为阈值的10倍或更多倍的脉冲电流驱动或者光从光注入装置10注入半导体激光器元件20，该脉冲电压具有阈值电压值的两倍或更多倍的脉冲电压。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010027935A Semiconductor laser, optical disk device and optical pickup 审中-公开
标题翻译：半导体激光器，光盘设备和光学拾取器
公开(公告)号：JP2010027935A
公开(公告)日：2010-02-04
申请号：JP2008189265
申请日：2008-07-23
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OTA MAKOTO , YOKOYAMA HIROYUKI , KURAMOTO MASARU , IKEDA MASAO
IPC分类号： H01S5/065 , G11B7/125 , H01S5/223
CPC分类号： H01S5/0658 , H01S5/0425 , H01S5/0602 , H01S5/0652 , H01S5/1064 , H01S5/22 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser that can perform a self-pulsation operation, sufficiently decrease coherence of laser light, and stably obtain low-noise laser light. SOLUTION: The semiconductor laser has a laser chip 10 having at least one laser stripe 11, extending in a resonator length direction, between end surfaces 10a and 10b facing each other. The laser stripe 11 has a gain region 14 and a saturable absorption region 15 in the resonator length direction. The width of the laser stripe 11 in the saturable absorption region 15 is made larger than the width of the laser stripe 11 in the gain region 14. Electrodes 16 and 17 are provided separately from each other on the gain region 14 and saturable absorption region 15 respectively. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够进行自脉动操作的半导体激光器，充分降低激光的相干性，并稳定地获得低噪声激光。解决方案：半导体激光器具有在彼此面对的端面10a和10b之间具有沿谐振器长度方向延伸的至少一个激光条纹11的激光器芯片10。激光条纹11在谐振器长度方向上具有增益区域14和可饱和吸收区域15。使可饱和吸收区域15中的激光条纹11的宽度大于增益区域14中的激光条纹11的宽度。电极16和17在增益区域14和可饱和吸收区域15上彼此分开设置分别。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009049310A Semiconductor laser, bio-imaging system, microscope, optical disk device, optical pickup, processing machine, and endoscope 审中-公开
标题翻译：半导体激光，生物成像系统，微型光学器件，光盘设备，光学拾取器，加工机器和内窥镜
公开(公告)号：JP2009049310A
公开(公告)日：2009-03-05
申请号：JP2007216152
申请日：2007-08-22
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of easily obtaining a compact, high-power ultrashort pulsed light source at low cost.
SOLUTION: A semiconductor laser comprises one laser chip 51 that has at least one laser stripe 52 between a first end face 51a and a second end face 51b opposing to each other. The laser chip 51 has a mode-locked laser section 54 on the first end face 51a side, and a semiconductor light amplifier section 55, which amplifies light emitted by the mode-locked laser section 54, on the second end face 51b side. The angle which the normal to the first end face 51a forms with the laser stripe 52 in the mode-locked laser section 54 is not less than 0° and not more then 1°; and the angle which the normal forms with the laser stripe 52 in the semiconductor light amplifier section 55 is more than 1° and less than 90°.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够以低成本容易地获得紧凑的大功率超短脉冲光源的半导体激光器。解决方案：半导体激光器包括在第一端面51a和彼此相对的第二端面51b之间具有至少一个激光条52的一个激光芯片51。激光芯片51在第一端面51a侧具有锁模激光部54，在第二端面51b侧具有放大由锁模激光部54发出的光的半导体光放大部55。锁模激光部54中的第一端面51a的法线与激光条52形成的角度不小于0°且不大于1°; 并且与半导体光放大部55中的激光条52形成的法线的角度大于1°且小于90°。版权所有（C）2009，JPO＆INPIT

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