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    • 2. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2010056333A
    • 2010-03-11
    • JP2008220299
    • 2008-08-28
    • Toyota Motor Corpトヨタ自動車株式会社
    • SUZUKI TOMOKIYO
    • H01L23/34H01L25/07H01L25/18
    • H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To simply and accurately detect deterioration of respective solder layers in a semiconductor device in which a plurality of structures composed of power semiconductor elements respectively mounted on respective insulating substrates by soldering are integrated on one support surface by soldering. SOLUTION: In the semiconductor device, six structures S11, S12, S13, S21, S22, S23 respectively having IGBTs 11-16 mounted on respective insulating substrates 21-26 by soldering are integrally modularized by adjacently arranging these structures on the same plane of a radiating board 51 by soldering. First and second thermal diodes 31-38, 41-48 for detecting the temperatures of corner parts are arranged on corner parts having the largest number of other adjacent structures S11, S12, S13, S21, S22, S23 out of the four corners of the insulating substrates 21-26 configuring the semiconductor device and corner parts of the IGBTs 11-16 mounted on the insulating substrates 21-26 and having the shortest distances from the corner parts. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了简单且准确地检测半导体器件中的各个焊料层的劣化,其中通过焊接将分别安装在各绝缘基板上的功率半导体元件构成的多个结构通过焊接集成在一个支撑表面上。 解决方案:在半导体器件中,分别通过焊接安装在各绝缘基板21-26上的IGBT11-16的六个结构S11,S12,S13,S21,S22,S23通过相邻地布置这些结构而被一体地模块化 通过焊接散热板51的平面。 用于检测角部分温度的第一和第二热二极管31-38,41-48布置在具有最大数量的其它相邻结构S11,S12,S13,S21,S22,S23的角部上, 绝缘基板21-26,其配置半导体器件和安装在绝缘基板21-26上并且与拐角部分最短距离的IGBT11-16的角部。 版权所有(C)2010,JPO&INPIT
    • 3. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2009283861A
    • 2009-12-03
    • JP2008137014
    • 2008-05-26
    • Toyota Central R&D Labs IncToyota Motor Corpトヨタ自動車株式会社株式会社豊田中央研究所
    • USUI MASANORIISHIKO MASAYASUSUZUKI TOMOKIYOHOTTA KOJISAITO JUNYANAGIUCHI AKIHIRO
    • H01L23/42H02M7/48
    • H01L2224/48491H01L2924/1305H01L2924/13055H01L2924/19107H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a technique capable of lowering the cooling ability in a semiconductor device with the output power amount varying to time, which needs to determine the specification of a cooler taking into consideration of the case of generating the maximum heat by operation with the maximum output. SOLUTION: A melting substance 8 is sealed in the semiconductor device 20. The melting substance selected is one capable of obtaining the following phenomenon. The melting substance is solid at the time of maintaining a first output power amount set in a small output range in a rated fluctuation range and it is molten at the time of maintaining a second output power amount set in a large output range in the rated fluctuation range. The melting point of the melting substance is set at or lower than the maximum temperature allowing normal operation of the semiconductor device. The melting substance 8 is disposed on the opposite side of an exothermic part (semiconductor chip 14) with respect to a substrate 18. The melting substance 8 prevents a solder layer 16 of the semiconductor device 20 from overheating to the melting point of the melting substance or higher than that. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种能够以随时间变化的输出功率量降低半导体器件的冷却能力的技术,需要考虑到产生最大值的情况来确定冷却器的规格 热量通过最大输出运行。 解决方案:熔融物质8被密封在半导体器件20中。所选择的熔化物质是能够获得以下现象的物质。 在保持在额定变动范围内设定在小输出范围内的第一输出功率量时熔融物质是固体,并且在维持设定在大额定波动的大输出范围内的第二输出功率量时熔化物质 范围。 熔化物质的熔点设定为或低于允许半导体器件正常工作的最高温度。 熔化物质8相对于基板18设置在放热部(半导体芯片14)的相对侧。熔化物质8防止半导体器件20的焊料层16过热到熔化物质的熔点 或更高。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Module formed by bonding low thermal expansion coefficient material and high thermal expansion coefficient material
    • 通过结合低热膨胀系数材料和高热膨胀系数材料形成的模块
    • JP2009252977A
    • 2009-10-29
    • JP2008098631
    • 2008-04-04
    • Toyota Central R&D Labs IncToyota Motor Corpトヨタ自動車株式会社株式会社豊田中央研究所
    • USUI MASANORIISHIKO MASAYASUSAITO JUNSUZUKI TOMOKIYOHOTTA KOJIYANAGIUCHI AKIHIRO
    • H01L23/12
    • H01L2224/48091H01L2224/48137H01L2224/48472H01L2224/49111H01L2224/49175H01L2224/73265H01L2924/13055H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To solve the problem that when a component containing a low thermal expansion coefficient material as a main material is bonded to a component containing a high thermal expansion coefficient material as a main material to form a module, a large thermal stress is applied to a bonding material such as solder by the difference in thermal expansion between both the materials when exposed to heat cycle and a junction portion is easily damaged. SOLUTION: A thermal expansion coefficient gradually increasing layer 10d containing a high thermal expansion coefficient material 10b that increases the content toward a junction surface 10c is formed on the junction surface 10c of a component 10 containing a low thermal expansion coefficient material as a main material. Alternatively, a thermal expansion coefficient gradually decreasing layer containing a low thermal coefficient material that increases the content toward a junction surface is formed on the junction surface of a component containing a high thermal expansion coefficient material as a main material. When the layer having a thermal expansion coefficient gradually increasing the content toward the junction surface 10c is formed on the junction surface 10c side of the component 10 containing the low thermal expansion coefficient material as a main material, junction is not necessarily executed on junction surfaces having largely different thermal expansion coefficients. Thus, damage can be prevented on the junction surface even if subjected to exposure in a severe heat cycle. COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题为了解决以含有低热膨胀系数材料为主要成分的成分与包含高热膨胀系数材料作为主要材料的成分结合形成模块的问题, 当暴露于热循环时,由于两种材料之间的热膨胀差导致热应力作用于诸如焊料的接合材料,并且接合部分容易损坏。 解决方案:在包含低热膨胀系数材料的部件10的接合表面10c上形成包含增加朝向接合面10c的含量的高热膨胀系数材料10b的层10d的逐渐增加的热膨胀系数,作为 主要材料。 或者,在包含高热膨胀系数材料作为主要材料的部件的接合表面上形成包含增加向接合面的含量的低热系数材料的热膨胀系数逐渐降低的层。 当在包含低热膨胀系数材料作为主要材料的部件10的接合表面10c侧上形成热膨胀系数向结合面10c逐渐增加的层时,不必在具有 在很大程度上不同的热膨胀系数。 因此,即使在严重的热循环中经受曝光,也可以防止接合面上的损伤。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Case for electric apparatus and its manufacturing method
    • 电气设备及其制造方法
    • JP2007234463A
    • 2007-09-13
    • JP2006056292
    • 2006-03-02
    • Matsuo Seisakusho:KkToyota Motor Corpトヨタ自動車株式会社株式会社松尾製作所
    • SUZUKI SACHIKAZUISHIMARU AKIRASUZUKI TOMOKIYOHAYASHI HIROTADAHAYASHIDA SHIGERUKURIYAGAWA OSAMUKOBAYASHI IORINAKANISHI KENSUKETAKAHASHI TORUYAMAKAWA YUKISUMITA MASAKI
    • H01R4/64H01R13/648H01R43/00
    • H01R13/6597H01R24/68H01R43/24H01R2103/00Y10T29/49
    • PROBLEM TO BE SOLVED: To manufacture, with a small number of processes, a connector case with a resin connector formed integrally therewith and with a ground terminal arranged in the connector fixed to a housing. SOLUTION: This connector case 10 is provided with the housing 10, the resin connector 30 and the ground terminal 40 extending along the circumference of the connector 30. A part to be fixed extending to the rear side of the ground terminal 40 is fixed to a fixing part 22 of the housing 20 by crimping or pressing in. When the housing 20 and the ground terminal 40 are mounted in a die for injection-molding the resin connector 30, and thereafter the die is closed, a pressing part formed in the die presses the part to be fixed against the fixing part 22, and the part to be fixed is crimped to or pressed in the fixing part 22. Thereby, the ground terminal 40 can be fixed to the housing 20 at the same time in a process for injection-molding the connector 30. The connector case with the ground terminal 30 fixed to the housing 20 can be manufactured by using a small number of processes. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:通过少量工艺制造具有与其一体形成的树脂连接器的连接器壳体,以及布置在固定到壳体的连接器中的接地端子。

      解决方案:该连接器壳体10设置有壳体10,树脂连接器30和接地端子40沿连接器30的圆周延伸。待固定延伸到接地端子40的后侧的部分是 通过卷边或压入固定到壳体20的固定部分22.当将壳体20和接地端子40安装在用于注射成型树脂连接器30的模具中,然后模具闭合时,形成按压部分 在模具中将待固定的部分压靠在固定部分22上,待固定的部分被压接或压在固定部分22中。由此,接地端子40可以同时固定到壳体20上 用于注射成型连接器30的工艺。可以通过使用少量的工艺来制造具有固定到壳体20的接地端子30的连接器壳体。 版权所有(C)2007,JPO&INPIT

    • 6. 发明专利
    • ANTI-SKID CONTROL DEVICE
    • JPH02267064A
    • 1990-10-31
    • JP8614989
    • 1989-04-05
    • TOYOTA MOTOR CORP
    • ISHIZAKA MUNENORISUZUKI TOMOKIYOKOMAZAWA MASAAKIKOMATSUZAKI KOSUKEHAMADA CHIAKI
    • B60T8/58B60T8/172B60T8/174B60T8/1764
    • PURPOSE:To prevent control accuracy from being degraded by correcting a set time in accordance with the optimum specified regulation at a specified time when the wheel tends to be locked while being in a quick pressure intensifying mode set by the previous unit control so that the control mode is completed before the set time. CONSTITUTION:A controller 50 operates the reference speed based on wheel speeds, wheel acceleration and estimated vehicle speeds from a revolution sensor 54, furthermore with anticipation of a specified slip rate for the estimated vehicle speeds, and then, judges whether or not anti-skid control is required when a brake pedal 12 is depressed. When the friction coefficient of road surfaces is abruptly decreased during the period of antiskid control, and when a quick pressure intensifying mode has been completed before a set time, which is caused by a two-position valve 22 of some certain unit control because of abrupt increase in brake actuating force, the set time for the following time is corrected in accordance with the specified regulation to a greater extent than being corrected in accordance with the normal regulation. By this constitution, the time until the set time for quick pressure intensification is corrected to the value suitable to the friction coefficient of road surfaces and brake actuating force, is shortened, degradation in control accuracy for wheel cylinder hydraulic pressure can thereby be prevented.
    • 8. 发明专利
    • Power module
    • 电源模块
    • JP2011018807A
    • 2011-01-27
    • JP2009163060
    • 2009-07-09
    • Toyota Motor Corpトヨタ自動車株式会社
    • SUZUKI TOMOKIYO
    • H01L23/36H01L25/07H01L25/18
    • H01L2224/32225
    • PROBLEM TO BE SOLVED: To provide a power module capable of reducing stress distortion generated at a center part of a semiconductor element.SOLUTION: The power module 1 has an insulating substrate 2, and wiring layers 3 and 4 are formed on upper and lower surfaces of the insulating substrate 2 respectively. The semiconductor element 5 is joined to a center part of the wiring layer 3 with solder 6. A heat sink 7 is joined to the wiring layer 4 with solder 8. A thickness of a center part region (a region corresponding to the center part of the semiconductor element 5) 2a of the insulating substrate 2 is less than that of a peripheral part region (a region corresponding to a part other than the center part of the semiconductor element 5) 2b of the insulating substrate 2.
    • 要解决的问题:提供能够减少在半导体元件的中心部分产生的应力变形的功率模块。解决方案:功率模块1具有绝缘基板2,并且布线层3和4形成在上表面和下表面上 的绝缘基板2。 半导体元件5用焊料6接合到布线层3的中心部分。散热器7用焊料8接合到布线层4.中心部分区域的厚度(对应于 绝缘基板2的半导体元件5)2a小于绝缘基板2的周边部区域(与半导体元件5的中心部分以外的部分对应的区域)2b。
    • 9. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2010212294A
    • 2010-09-24
    • JP2009053938
    • 2009-03-06
    • Toyota Motor Corpトヨタ自動車株式会社
    • SUZUKI TOMOKIYO
    • H01L23/34H01L21/52
    • H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device which has a simpler structure and can precisely manage the presence or absence of deterioration such as a crack generated in a conductive bonding layer formed of solder used for bonding a semiconductor element and an insulating substrate. SOLUTION: In the semiconductor element 110 mounted to the insulating substrate 120 through a solder layer, parts on which thermal stress concentrate are biased to corners 110a and 120a by chamfering corners except for the specified corners 110a and 120a with the insulating substrate 120. Temperature detecting elements TM1 and TM2 detecting temperatures are arranged in the corners 110a and 120a. The presence or absence of the generation of the crack in the solder layer, namely, the presence or absence of deterioration is managed. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种具有更简单结构并可以精确地管理劣化的半导体器件,例如由用于接合半导体元件的焊料形成的导电接合层中产生的裂纹和绝缘体 基质。 解决方案:在通过焊料层安装到绝缘基板120的半导体元件110中,通过用绝缘基板120倒角除了指定角110a和120a之外的角部,将热应力集中的部件偏压到拐角110a和120a的部件 温度检测元件TM1和TM2检测温度被布置在拐角110a和120a中。 管理焊料层中存在或不存在裂纹,即存在或不存在劣化。 版权所有(C)2010,JPO&INPIT
    • 10. 发明专利
    • Module, and method of manufacturing the same
    • 模块及其制造方法
    • JP2009224609A
    • 2009-10-01
    • JP2008068391
    • 2008-03-17
    • Toyota Central R&D Labs IncToyota Motor Corpトヨタ自動車株式会社株式会社豊田中央研究所
    • USUI MASANORIYAMADA YASUSHIISHIKO MASAYASUYANAGIUCHI AKIHIROSUZUKI TOMOKIYOHOTTA KOJISAITO JUN
    • H01L21/52H01L23/12
    • PROBLEM TO BE SOLVED: To provide a structure which is improved in reliability when a pair of metal layers differing in coefficient of thermal expansion are connected to each other with a state of a high coefficient of thermal conductivity. SOLUTION: At least surfaces of the respective metal layers are made of Cu. They are connected to each other with a plurality of columnar substances 18. Each of the columnar substances 18 extends in a columnar shape from one metal layer to the other metal layer and the plurality of columnar substances 18 are distributed within a formation range of the metal layers. At least end surfaces of the respective columnar substances 18 are made of Cu. When a layer of Sn is interposed between metal layer Cu and Cu of the columnar substances 18 and heated, Cu and Sn are alloyed, so that the metal layers and the end surfaces of the respective columnar substances 18 are connected with the SnCu alloy present between them. Even when the columnar substances 18 are arranged to high density to increase the heat conductivity, the durability of the connection portion is high. The connection strength by the SnCu is higher than that by solder. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种在热膨胀系数不同的一对金属层以高导热系数的状态彼此连接时提高可靠性的结构。 解决方案:各个金属层的至少表面由Cu制成。 它们通过多个柱状物质18彼此连接。每个柱状物质18从一个金属层延伸到另一个金属层的柱状,并且多个柱状物质18分布在金属的形成范围内 层。 各柱状物质18的至少端面由Cu构成。 当Sn层被插入在柱状物质18的金属层Cu和Cu之间并加热时,Cu和Sn合金化,使得各个柱状物质18的金属层和端面与SnCu合金之间存在 他们。 即使柱状物质18被布置成高密度以增加导热性,连接部分的耐久性也高。 SnCu的连接强度高于焊料的连接强度。 版权所有(C)2010,JPO&INPIT