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1. 发明专利

JP2000260380A ELECTRON BEAM INSPECTION DEVICE 失效
公开(公告)号：JP2000260380A
公开(公告)日：2000-09-22
申请号：JP6565799
申请日：1999-03-11
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： SUZUKI TOSHIYUKI
IPC分类号： H01J37/22 , G01B15/00 , H01J37/244
摘要： PROBLEM TO BE SOLVED: To make the shape observation and dimension inspection of very fine pattern possible in an electron beam inspection device of a scanning electron microscope for example. SOLUTION: A processor part 26 conducts isignal procesing for signals detected with a secondary electron detector 16 and a reflecting electron detector 17, forms an electron image of each signal, and two electron images are superimposed on each other to form a synthetic electron image. Ratio of each signal amount to be synthesized is varied according to the surface shape of a sample 6, and the electron image is formed, based on the signal amount varied.

2. 发明专利

JP2001093814A METHOD AND APPARATUS FOR ELECTRON BEAM EXPOSURE 失效
公开(公告)号：JP2001093814A
公开(公告)日：2001-04-06
申请号：JP26952399
申请日：1999-09-22
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： SUZUKI TOSHIYUKI
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To avoid accumulation of charges on the surface of a wafer. SOLUTION: There are provided a 1st exposure step S101, in which a resist layer is exposed by using electron beam scanning technology, a transfer step S102 in which an electron gun is transferred to a position which is not adjacent to the present position, a decision step S103 in which it is decided whether all the surface is scanned, and a 2nd exposure step S104 in which parts to be exposed among blank parts are exposed.

3. 发明专利

JPH0471220A MASK FOR MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSING METHOD USING SAME, SPINNER FOR MANUFACTURING SAME, AND ACCOMMODATING VESSEL FOR ACCOMMODATING SAME 失效
公开(公告)号：JPH0471220A
公开(公告)日：1992-03-05
申请号：JP18462090
申请日：1990-07-12
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： H01L21/027 , G03F7/20
摘要： PURPOSE:To obtain a mask for manufacturing a semiconductor device which mask is capable of preventing charge and an accommodating vessel for the mask, by a method wherein, on a conducting film, at least one portion exposing said film is formed, a resin film is spread, and the exposed portion is turned into an electrode. CONSTITUTION:On the surface of a light transparent plate 10, a chromium film 12 having light shielding properties and electric conductivity is formed. A portion 16 where a part of the chromium film 12 is exposed is formed, and photoresit 14 sensitive to an electron beam is spread. A mask blank 20 having the portion 16 where the chromium film 12 is exposed is mounted on a specimen stand 22 of an electron beam lithography equipment 21, and irradiated with the electron beam, thereby performing image drawing exposure. At this time, the portion 16 where the chromium film is exposed is brought into contact with an electrode 28 grounded to the specimen stand 22. When the mask blank 20 is accommodated, the portion 16 where the chromium mask is exposed is brought into contact with an electrode 72.

4. 发明专利

JPH03183118A METHOD AND APPARATUS FOR ELECTRON BEAM EXPOSURE 失效
公开(公告)号：JPH03183118A
公开(公告)日：1991-08-09
申请号：JP32222589
申请日：1989-12-12
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： H01L21/30 , H01J37/304 , H01J37/317 , H01L21/027
摘要： PURPOSE:To prevent an irregularity in a pattern size due to a fog exposure by a method wherein, when mask blank is irradiated with an electron beam, a beam current is reduced gradually toward a peripheral part more susceptible to the fog exposure than in the central part on the surface of the mask blank. CONSTITUTION:A data 1a, for exposure pattern use, which is stored in a magnetic tape 1 is input to a disk 3; by using the data, a CPU 4 controls an exposure operation by an electron beam which is output from an electron gun 101. An EOS(electro-optical system) control part 5 adjusts a focusing operation of a beam current or changes a grid bias value inside the electron gun 101 in order to control the magnitude of the beam current. In this case, the EOS control part 5 controls the beam current in such a way that the current is reduced gradually more toward a peripheral part than in the central part of a mask blank 109. Consequently, the dose of the electron beam is reduced more toward the peripheral part susceptible to a fog exposure. As a result, the mask blank is exposed uniformly over its whole region.

5. 发明专利

JPH065503A ELECTRON BEAM EXPOSURE APPARATUS AND EXPOSURE METHOD THEREFOR 失效
公开(公告)号：JPH065503A
公开(公告)日：1994-01-14
申请号：JP16137492
申请日：1992-06-19
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： G03F7/20 , B82B1/00 , H01L21/027
摘要： PURPOSE:To provide an electron beam exposure apparatus and an exposure method therefor which can form an exposure pattern without causing defocusing even on a wafer surface having a stepped structure. CONSTITUTION:This apparatus is equipped with an electron gun 1, condenser lenses 3 and 5 and an objective lens 6 and further with a control part 12 which controls a focal distance of an electron beam by changing the position of a crossover point 15 of the electron beam generated between the condenser lenses 3 and 5 and the objective lens 6 by controlling an exciting current of the condenser lenses 3 and 5. The apparatus thus constructed can vary the focal distance of the electron beam by controlling the exciting current and can form an exposure pattern without causing defocusing even on a wafer surface having a stepped structure.

6. 发明专利

JPH04137616A DEVICE AND METHOD FOR APPLYING RESIST FILM 失效
公开(公告)号：JPH04137616A
公开(公告)日：1992-05-12
申请号：JP25908290
申请日：1990-09-28
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PURPOSE:To form a resist film of a constant thickness on a mask blank by providing a body section having a rotating table on which a sample is put with its center at the rotation axis, and a nozzle section for dripping a resist solution on to the center of the sample. CONSTITUTION:At first, a mask blank 16 is put on the rotating table 15 of a body section 11, and a resist scattering preventing cover 19 is closed. After that, a resist solution is dripped on to the center of the mask blank 16 from a resist solution dripping nozzle 20. On this occasion, the resist dripping nozzle 20 is so controlled that the resist solution may be dripped on the center of the mask blank 16 without fail. Next, a driver section 12 drives the rotating table 15 in order to rotate it at a constant low speed. And when the resist solution is dripped to a degree that it covers the surface of the mask blank 16, the rotating speed of the rotating table 15 is switched over to high-speed rotation. After that, the rotation is continued for a given time, and when the resist film is formed uniformly on the mask blank 16, the rotating table 15 is stopped.

7. 发明专利

JPH03242921A APPARATUS FOR EXPOSURE TO ELECTRONIC BEAM 失效
公开(公告)号：JPH03242921A
公开(公告)日：1991-10-29
申请号：JP4033090
申请日：1990-02-21
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： H01L21/30 , H01J37/302 , H01L21/027
摘要： PURPOSE:To make it possible to partially correct a pattern image without newly originating image data of an electron beam magnetic tape(EBMT) format by regulating the magnitude of a beam current on the basis of correction data, to specify the detail of the partial correction of the pattern image, stored beforehand. CONSTITUTION:The present invention includes a storage (a magnetic disc device 71) to store correction data, a detection means (a laser interferometer 92), a comparison means (a comparison circuit 10), and correction means (a CPU 72, an image control circuit 73, and an EOS control system 74) to control an electronics system 80. If a pattern must be modified after image data of an EBMT format are originated, a beam current is regulated to the most appropriate magnitude on the basis of the correction data, to specify the detail of partial correction of the pattern image, prepared beforehand. Therefore, the sections, where the pattern width must be corrected or pattern processing must be partially corrected, can be corrected. Thereby the pattern image can be partially corrected without newly originating image data and the throughput improves.

8. 发明专利

JPH02103046A MANUFACTURE OF MASK FOR PRODUCING SEMICONDUCTOR AND HARD MASK BLANK PLACING TABLE 失效
公开(公告)号：JPH02103046A
公开(公告)日：1990-04-16
申请号：JP25661288
申请日：1988-10-12
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SUZUKI TOSHIYUKI
IPC分类号： G03F1/40 , G03F1/68 , G03F1/78 , H01L21/027
摘要： PURPOSE:To prevent adhesion of dust, etc., due to static electricity and to prevent the occurrence of a mask defect by treating material with the potential of a resist film kept the same as the ground after the surface of a hard mask blank is exposed. CONSTITUTION:After a hard mask blank 1 is irradiated an electron beam 41, the subsequent treatment is executed with the potential of the resist film 4 kept the same as the ground. To ground a chrome film 3, an electrode 11 is brought into contact with a part exposed to the side of the hard mask blank of the film 3 being a conductor, and a conductive wire 12 is grounded to the part. Through the use of a hard mask blank placing table 21, the hard mask blank 1 is placed on the bottom 22a of a base 22, and the film 3 is pressed and held with pins 23a and 14b through the springs 24a and 24b of the table 21. Then the films 3 and 4 are grounded through the conductive wire 25 similarly. In such a way, the surface of the film 4 is not electrified; therefore the adhesion of dust, etc., is eliminated to prevent the occurrence of a mask defect. In addition, operability is improved.

9. 发明专利

JP2008309780A Fast reactor of reflector control system 有权
标题翻译：反射器控制系统的快速反应器
公开(公告)号：JP2008309780A
公开(公告)日：2008-12-25
申请号：JP2008123952
申请日：2008-05-09
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TOSHIRO , INATOMI TAKAYA , NAKAMURA HIROSHI , FUKAMICHI KENJIRO , SUZUKI TOSHIYUKI , HASEGAWA KATSUSHI , TSUBOI YASUSHI , KURAMOCHI SHIN
IPC分类号： G21C7/28
CPC分类号： G21C1/02 , G21C7/10 , G21C7/28 , G21C11/06 , Y02E30/34 , Y02E30/39
摘要： PROBLEM TO BE SOLVED: To provide a fast reactor of a reflector control system which is excellent in the structural integrity and manufacturability of a reflector and has high reliability.
SOLUTION: The fast reactor 20 of a reflector control system in this invention is equipped with a reactor vessel 21 accommodating a coolant 26, a core 25 located in the reactor vessel 21 and submerged in the coolant 26 and a reflector 35 placed outside the core 25 so as to move freely in the vertical directions in order to control the reactivity of the core 25. The reflector 35 has a neutron reflective section 35a in its lower part which has a higher neutron reflective capability than the coolant 26 and a cavity section 35b which is located above the neutron reflective section 35a and has lower neutron reflective capability than the coolant 26, and the cavity section 35b is composed of tubular sealing containers 60.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种反射器控制系统的快速反应器，其具有优异的反射器的结构完整性和可制造性，并且具有高可靠性。解决方案：本发明中的反射器控制系统的快速反应器20装备有容纳冷却剂26的反应器容器21，位于反应器容器21中并浸没在冷却剂26中的芯25和放置在外部的反射器35 芯25，以便在垂直方向上自由移动，以便控制芯25的反应性。反射器35在下部具有中子反射部35a，该中子反射部35a具有比冷却剂26更高的中子反射能力，部分35b位于中子反射部分35a上方并具有比冷却剂26低的中子反射能力，并且空腔部分35b由管状密封容器60组成。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JPH11109071A HIGH-SPEED BREEDER REACTOR AND DECOMPOSITION DEVICE OF ITS REACTOR CORE UPPER MECHANISM 失效
公开(公告)号：JPH11109071A
公开(公告)日：1999-04-23
申请号：JP27112397
申请日：1997-10-03
申请人： TOSHIBA CORP
发明人： SUZUKI TOSHIYUKI , SUEZONO CHIYOUICHI
IPC分类号： G21C1/02 , G21C19/02
摘要： PROBLEM TO BE SOLVED: To eliminate the need of a rotary plug and to miniaturize a reactor vessel, by setting a reactor core upper mechanism to a decomposition type or pickup type. SOLUTION: In a high-speed breeder reactor 20, a reactor core 23 and a cooling material 26 are accommodated in a reactor vessel 21. An upper lid 33 for forming a cover gas boundary 34 is provided at the upper portion of the reactor vessel 21, and a reactor core upper mechanism 36 is installed at the upper lid 33 so that it can be pulled freely. A control rod drive mechanism is mounted to the reactor core upper mechanism 36, at the same time a fuel exchange machine that calm be installed at the decomposition region of the reactor core upper mechanism 36 is provided, and a fuel being loaded into the reactor core 23 can be exchanged by the fuel exchange machine. An operation floor 40 is positioned at the upper portion of the upper lid 33, a cylindrical storage container 45 is installed airtightly on the operation floor 40 via a door valve device 41, and the pulled reactor core upper mechanism 36 can be accommodated.

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