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1. 发明专利

JP2003156831A MASK, METHOD FOR PRODUCING MASK AND APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003156831A
公开(公告)日：2003-05-30
申请号：JP2001356322
申请日：2001-11-21
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KAGA AKIKO , KASHIMOTO NOBORU
IPC分类号： G02F1/1335 , G02F1/1368 , G03F1/68 , G03F1/70 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mask used in production of a substrate by divided exposure without increasing production cost and to provide a method for producing a mask by which the above mask can easily be designed and an apparatus for producing a mask. SOLUTION: A mask corresponding to a first divided region A includes a prescribed pattern K, a multiple exposure region I in which multiple exposure is carried out between the first divided region A and an adjacent second divided region B is zigzag formed along a dividing line in such a way that the multiple exposure region I can engage with the second divided region B, and such a light shielding pattern J as to narrow the width of the prescribed pattern K is included in the multiple exposure region I.

2. 发明专利

JP2002163323A METHOD AND DEVICE FOR PATTERN LAYOUT AND MEDIUM STORING PATTERN LAYOUT PROGRAM 失效
公开(公告)号：JP2002163323A
公开(公告)日：2002-06-07
申请号：JP2000356801
申请日：2000-11-22
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： IZUKI YOSHIHARU , OI AKIRA , KASHIMOTO NOBORU
IPC分类号： G06F17/50 , H05K3/00
摘要： PROBLEM TO BE SOLVED: To provide a pattern layout method capable of efficiently extracting the length or width of a forming part comprising a pattern or area such as critical area out of that pattern. SOLUTION: Pattern data composed of the coordinates of respective apexes are read out of a storage device 21. Preset plural rectangular divided patterns A1 for each of width are extracted from the pattern data. These extracted divided patterns A1 are divided for each of preset plural widths Wi and a length for each width Wi is found. A wiring pattern is recognized and a wiring length or wiring width is exactly and efficiently found.

3. 发明专利

JPH07140486A THIN-FILM SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE FORMED BY USING THE SAME 失效
公开(公告)号：JPH07140486A
公开(公告)日：1995-06-02
申请号：JP28467293
申请日：1993-11-15
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KASHIMOTO NOBORU
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To embody the thin-film semiconductor device which does not generate dust at the time of inspection and facilitates external connection. CONSTITUTION:Transparent conductive layers 106 are formed respectively on the uppermost layers of a pad part 100 for inspection and a pad part 107 for inspection even if hard probes for inspection are pressed to the pad part 100 for inspection and the pad part 107 for inspection at the time of executing electrical inspection, such as conduction inspection and electrical inspection. Since relatively soft Al layers 104 and signal lines 108, etc., under these conductive layers are protected, the generation of a defect, such as short circuiting, occurring in the generation of the dust generated thus far by flawing at the time of contact of the probes with the materials, such as relatively soft Al layers 104, is prevented.

4. 发明专利

JPH11258629A MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11258629A
公开(公告)日：1999-09-24
申请号：JP6109098
申请日：1998-03-12
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： KASHIMOTO NOBORU , HAYASHI HISAAKI
IPC分类号： G09F9/30 , G02F1/1337 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To provide the manufacture of a large-area liquid crystal display device which has inconspicuous joints and excellent display quality. SOLUTION: A conductor layer or dielectric layer formed on the glass substrate of the liquid crystal display device is divided into areas (A, B, D, and E), which are exposed and patterned, area by area. The border lines of the divided areas are formed zigzag and engaged with the border lines of other divided areas. At a cross part where a horizontal border line (a) dividing the areas horizontally and a vertical border line (b) dividing the areas vertically cross each other at right angles, the zigzag border line of the divided area has a pattern extending into the diagonally opposite divided area.

5. 发明专利

JPH06132305A METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR 失效
公开(公告)号：JPH06132305A
公开(公告)日：1994-05-13
申请号：JP8538692
申请日：1992-04-07
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KASHIMOTO NOBORU
IPC分类号： H01L21/20 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To enhance the mobility of an active polycrystalline silicon for avoiding the dispersion in the characteristics of the thin film transistor while avoiding the breakdown of a gate insulating film due to the charge up during the manufacturing steps by a method wherein a silicon film on a substrate is to be polycrystallized using the polycrystalline silicon in a gate layer as a crystalline nucleus. CONSTITUTION:A silicon film 2 is formed on a substrate 1 to form a gate insulating film 4 on the silicon film 2 and then a gate layer to be a gate electrode in contact with the silicon film 2 is formed of a polycrystalline silicon 3 on the gate insulating film 4. Next, the silicon film 2 on the substrate 1 is polycrystallized using the polycrystalline silicon 3 in the gate layer as a crystalline nucleus to form source.drain regions by ion implanting step. Next, after the formation of a specific interlayer insulating film 6 and electrode 8, any needless connecting parts are cut off. For example, after patterning the amorphous silicon 2, the silicon oxide film 4 (gate insulating film) is formed to make a contact hole in a part thereof so that the previously formed polycrystalline silicon 3 may be heat-treated.

6. 发明专利

JPH10232377A PATTERN LAYOUT DEVICE FOR LIQUID CRYSTAL DISPLAY 失效
公开(公告)号：JPH10232377A
公开(公告)日：1998-09-02
申请号：JP3811697
申请日：1997-02-21
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： NAKAZATO MASAHIRO , IZUKI YOSHIHARU , TAKAHASHI KOJI , KASHIMOTO NOBORU
IPC分类号： G02F1/13 , G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide a pattern layout device for which an improvement in a design accuracy, reduction in a design period, and decrease in errors are aimed at. SOLUTION: A required design specification when designing a reticle, is inputted (11) to a computer configuring a CAD system. The CAD system uses pattern data set beforehand, and creates (12) a detailed pattern of an entire array substrate based on the design specification inputted. Reticle division line is set (13) from this pattern of the entire array substrate and the design specification inputted. Relation between the pattern of the entire array substrate and the division line (14) is judged (14), and if necessary, it is judged which part of the pattern of the entire array substrate the division line that reestablishes (15) of the division line and corrects the pattern of the entire array substrate (16) passes through. If the problem is lost in the division line, the reticle pattern is cut out (17), and each of the divided reticles is stored (19) which are processed with the pattern treatment (18) for a multi-exposure area of a reticle pattern at the same time.

7. 发明专利

JPH07142733A MANUFACTURE OF SILICON THIN-FILM TRANSISTOR 失效
公开(公告)号：JPH07142733A
公开(公告)日：1995-06-02
申请号：JP29208893
申请日：1993-11-22
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KASHIMOTO NOBORU
IPC分类号： H01L29/78 , H01L29/786
摘要： PURPOSE:To thin only the silicon layer in a channel section and to lessen the dispersion of film thickness by forming the silicon layer on a substrate, forming an oxide film on the surface of the silicon layer after that, exfoliating the oxide layer in a region of a part to be the channel, and forming an oxide layer again after that. CONSTITUTION:First of all, a polycrystalline silicon film 102 is formed on an insulating substrate 101, and the silicon film 102 is patterned into the shape of an island to form a polycrystalline silicon island 103. The surface of the silicon island 103 is thermally oxidized to form a thermal oxidation film 104, and a part to be a channel of the thermal oxidation film is exfoliated. Furthermore, a thermal oxidation film 105 is formed by thermal oxidation, and all the thermal oxidation films formed on the polycrystalline silicon are exfoliated and a recessed polycrystalline silicon film 106 is formed. Accordingly, the oxide film in the source and drain regions is oxidized from the state that the oxide film has been formed already at the time of the second thermal oxidation, so their intrusion into the polycrystralline silicon is less than that of the oxide film in the channel region.

8. 发明专利

JPH05136168A MANUFACTURE OF THIN FILM TRANSISTOR 失效
公开(公告)号：JPH05136168A
公开(公告)日：1993-06-01
申请号：JP29591391
申请日：1991-11-12
申请人： TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： KASHIMOTO NOBORU
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a manufacturing method for a thin film transistor wherein a thermal oxide film is made uniform without decreasing the mobility of polycrystalline silicon. CONSTITUTION:A noncrystalline silicon film 12 as a non-single crystal silicon thin film is formed on an insulative substrate 11. After the noncrystalline silicon film 12 is patterned in a specified island shape, a thermal oxide film 13 is formed by thermal oxidation. Silicon in a channel part is recrystallized as polycrystalline silicon 15 of large grain diameter by heat treatment. A polycrystalline silicon film is formed and patterned as a gate electrode 16, and a source.drain region is formed in a self-alignment manner. A silicon oxide film as an interlayer insulating film 17 is formed, and a contact hole 18 is made in the interlayer insulating film 17. An aluminum electrode 19 is formed and patterned, thereby completing the manufacturing process of an N channel MOS thin film transistor.

9. 发明专利

JPH09236818A THIN FILM TRANSISTOR ARRAY AND ITS PRODUCTION 失效
公开(公告)号：JPH09236818A
公开(公告)日：1997-09-09
申请号：JP4507796
申请日：1996-03-01
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： KASHIMOTO NOBORU , SHIMANO TAKUYA
IPC分类号： G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To decrease the number of processes to form thin film transistors in a pixel part and in a driving part on one substrate and to improve the production yield by covering either of p-Si semiconductor films which constitute complementary p-Si thin film transistors with a structural film of a-Si thin film transistor formed in a third region. SOLUTION: A n-type p-Si thin film transistor 101 and a p-type p-Si thin film transistor 102 which constitute complementary thin film transistors, and a reverse stagger type a-Si thin film transistor 103 are formed on one insulating substrate 104. The second insulating film 112 of the a-Si thin film transistor 103 is formed over the p-type p-Si thin film transistor 102. Namely, the second insulating film 112 has a function as a mask when the semiconductor film 105 of the n-type p-Si thin film transistor 101 is doped with impurity ions.

10. 发明专利

JPH08250736A METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR 失效
公开(公告)号：JPH08250736A
公开(公告)日：1996-09-27
申请号：JP4949195
申请日：1995-03-09
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： KASHIMOTO NOBORU
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PURPOSE: To provide a manufacturing method of a transistor, capable of cutting down the manufacturing cost in the simpler manufacturing process at the temperature not exceeding about 450 deg.C as well as realizing said transistor having high reliability upon the same. CONSTITUTION: An SiO2 film 204 as a gate insulating film covering an active layer 210 made of a material such as p-Si film as well as a gate electrode 205 are formed of a transparent material so that light energy may be high efficiently absorbed into the active layer 210 suffering minimum loss even after the formation of the gate insulating film and the the gate electrode 205 on the active layer 210. Accordingly, both of the turning step of α-Si into p-Si and the activating step as the active layer 210 can be collectively performed by one time optical irradiation.

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