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1. 发明专利

JPS61193458A TREATMENT OF SILICON WAFER 失效
公开(公告)号：JPS61193458A
公开(公告)日：1986-08-27
申请号：JP3318185
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/316 , H01L21/322
摘要： PURPOSE:To realize appropriate crystal characteristics by a method wherein a silicon wafer is heated to a temperature not lower than 800 deg.C in an atmosphere of hydrogen or inert gas containing some hydrogen for the effective elimination in a short period of time of oxygen precipitates from the silicon wafer surface containing inter-lattice oxygen. CONSTITUTION:An Si wafer 11 equipped with a resistivity of 5-20OMEGA/cm is subjected to heat treatment in an argon atmosphere including 10% of hydrogen for the elimination of oxygen precipitates in the vicinity 11a of the surface of the Si wafer 11. In this process, oxygen in the vicinity 11a of the surface of the Si wafer 11 is diffused outward from the surface of r the formation of a defect-free layer in the vicinity 11a of the wafer surface. Simultaneously, a layer containing few lattices is formed in the inside 11b of the wafer. A process follow wherein the wafer 11 is subjected to oxidation in a dry atmosphere at a temperature not lower than 800 deg.C, preferably at 1,000 deg.C, for the formation of an oxide film 12, whereon a polycrystalline silicon film 13 is subsequently formed containing phosphorus.

2. 发明专利

JPS61193456A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS61193456A
公开(公告)日：1986-08-27
申请号：JP3318385
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/26 , H01L21/316 , H01L21/322 , H01L21/324
摘要： PURPOSE:To suppress the generation of lattice defects related to conductivity in a process of the formation of a thermal oxide film by a method wherein hydrogen is caused to join unsaturated bonds in a silicon wafer surface when the silicon wafer is subjected to heat treatment in a hydrogen atmosphere. CONSTITUTION:A thermal oxide film 12 is formed on the surface of a silicon wafer 11, a resist 13 is applied to the entire surface, and then etching is accom plished for the removal of the thermal oxide film 12 from a region planned for the formation of a gate oxide film. The silicon wafer 11 is then subjected to an RCA rinse and washing with water for the formation of a thin natural oxide film 14. Next, the wafer 11 is irradiated with light from a lamp, a halogen lamp for example, for the rise of the wafer surface temperature up to 1,000[ deg.C], and is left for a minute in argon gas including some hydrogen. In this process, unsaturated bonds present in the surface of the silicon wafer 11 accept hydrogen atoms for saturation. Next, a thermal oxide film 15 is formed on the wafer surface,which is followed by the formation of a polycrystalline silicon film 16.

3. 发明专利

JPS61193459A TREATMENT OF SILICON WAFER 失效
公开(公告)号：JPS61193459A
公开(公告)日：1986-08-27
申请号：JP3318285
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/316 , H01L21/322
摘要： PURPOSE:To equip a silicon wafer with appropriate charactristics by a method wherein an oxide film is formed on the surface of a silicon wafer, the silicon wafer is subjected to heat treatment that is accomplished at a temperature not lower than 800 deg.C in an atmosphere containing hydrogen, for the effective elimination in a short period of time of oxygen precipitates out of the silicon wafer surface containing inter-lattice oxygen. CONSTITUTION:An Si wafer 11 is placed in a dry oxygen atmosphere with the oxygen diluted to 10% by dry argon for the formation of an oxide film 12 on the wafer surface. The Si wafer 11 is then heat-treated in an argon atmosphere containing 10% of hydrogen for the elimination of oxygen precipitates for the vicinity 1a of the wafer surface. A process follows wherein the oxide film 12 is removed by etching. In this process, oxygen in the vicinity 11a of the surface of the Si wafer 11 is diffused outward from the surface for the formation of a defect-free layer in the vicinity 11a of the wafer surface. Simultaneously, a layer containing few lattices is formed in the inside 11b of the wafer 11. A process follows wherein the wafer 11 is subjected to oxidation in a dry atmosphere at a temperature not lower than 800 deg.C, preferably at 1,000 deg.C, for the formation of an oxide film 13. A polycrystalline silicon film 14 is then formed containing phosphorus.

4. 发明专利

JPH0518254B2 失效
公开(公告)号：JPH0518254B2
公开(公告)日：1993-03-11
申请号：JP10271584
申请日：1984-05-23
申请人： TOSHIBA CERAMICS CO
发明人： TAKAI NORIHEI , NAKANISHI HIROMITSU , AKAI KENJI , TAKAHASHI SHOICHI , WATANABE MASAHARU
IPC分类号： H01L21/20 , H01L21/322 , H01L21/324

5. 发明专利

JPS62123098A SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS62123098A
公开(公告)日：1987-06-04
申请号：JP26135185
申请日：1985-11-22
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , TAKAI NORIHEI , KIRINO YOSHIO , AKAI KENJI , KON TAKESHI , NAKANISHI HIROMITSU
IPC分类号： H01L21/324 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/322
摘要： PURPOSE:To obtain a silicon single crystal having great effect on reduction of crystal defect density, by heat-treating the silicon single crystal for semiconductor within a specific temperature range in an atmosphere of H2 gas over a specified time. CONSTITUTION:A silicon single crystal for semiconductors, particularly CZ- silicon single crystal for semiconductors is heat-treated within 800-1,350 deg.C temperature range in an atmosphere of H2 gas for 1sec-48hr. The H2 gas may be 100% H2 gas and diluted with N2 gas or inert gas or a mixed gas thereof. In the latter case, the ratio of H2 to N2 or inert gas is preferably 1:>=9.

6. 发明专利

JPS5915113B2 JPS5915113B2 - 失效
公开(公告)号：JPS5915113B2
公开(公告)日：1984-04-07
申请号：JP8871876
申请日：1976-07-27
申请人： Toshiba Ceramics Co
发明人： MORI MASAAKI , TAKAI NORIHEI , OGAWA TAMOTSU
IPC分类号： C04B35/64 , C04B35/10 , C04B35/58 , C04B35/599

7. 发明专利

JPS596835B2 JPS596835B2 - 失效
公开(公告)号：JPS596835B2
公开(公告)日：1984-02-14
申请号：JP4614876
申请日：1976-04-23
申请人： Toshiba Ceramics Co
发明人： NAGASHIMA HIDEO , MORI MASAAKI , TAKAI NORIHEI
IPC分类号： C04B38/00 , C01B21/082 , C04B35/58 , C04B35/599

8. 发明专利

JPS55117233A SEMICONDUCTOR DEVICE AND MANUFACTURING THEREOF 失效
公开(公告)号：JPS55117233A
公开(公告)日：1980-09-09
申请号：JP2371179
申请日：1979-03-01
申请人： TOKYO SHIBAURA ELECTRIC CO , TOSHIBA CERAMICS CO
发明人： OGINO MASANOBU , WATANABE MASAHARU , OANA YASUHISA , TAKAI NORIHEI
IPC分类号： H01L29/73 , H01L21/22 , H01L21/225 , H01L21/331 , H01L29/167
摘要： PURPOSE:To eliminate strain or dislocation and obtain a semiconductor device of good electric properties, by using Ge and an impurity having covalent bonding smaller than the covalent bonding radius of Si to produce a diffused layer on an Si substrate. CONSTITUTION:A diffused layer 12 is produced in a surface part of an Si substrate 11. A protective film 14 is coated on a doped layer 13 on the diffused layer 12 to prevent an impurity from being diffused out. A semiconductor device 10 is thus manufactured. A mixture of Ge and an impurity such as P or B having a smaller convalent bonding radius than Si is used for the diffused layer 12 depending on an electroconductive type to be obtained. The ratio of the diffused quantity of the impurity to that of the Ge in the diffused layer 12 is prescribed at 1.30 or less. The atom bonding radius is made uniform by the impurity of smaller covalent bonding radius and the Ge of larger covalent bonding radius. This results in making the semiconductor device undefective.

9. 发明专利

JPH07165496A PRODUCTION OF SILICON WAFER 失效
公开(公告)号：JPH07165496A
公开(公告)日：1995-06-27
申请号：JP23447694
申请日：1994-09-05
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , TAKAI NORIHEI , KIRINO YOSHIO , AKAI KENJI , KON TAKESHI , NAKANISHI HIROMITSU
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322 , H01L21/324
摘要： PURPOSE:To obtain a silicon wafer with low crystal defect density. CONSTITUTION:A silicon wafer is heat treated by staying at 1000-1350 deg.C for 30min or longer in a hydrogen gas atmosphere and then further heat-treated for 16hr in a dry oxygen gas atmosphere to conduct an etching to bring the average oxidatively induced laminate defect density of the wafer surface to about 1/5 times that before heat treatment.

10. 发明专利

JPH0456800B2 失效
公开(公告)号：JPH0456800B2
公开(公告)日：1992-09-09
申请号：JP1197285
申请日：1985-01-25
申请人： TOSHIBA CERAMICS CO
发明人： TAKAI NORIHEI , TAKAHASHI SHOICHI , FUSHII KUNIHIKO
IPC分类号： C30B25/18 , H01L21/205

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