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1. 发明专利

JPS61193456A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS61193456A
公开(公告)日：1986-08-27
申请号：JP3318385
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/26 , H01L21/316 , H01L21/322 , H01L21/324
摘要： PURPOSE:To suppress the generation of lattice defects related to conductivity in a process of the formation of a thermal oxide film by a method wherein hydrogen is caused to join unsaturated bonds in a silicon wafer surface when the silicon wafer is subjected to heat treatment in a hydrogen atmosphere. CONSTITUTION:A thermal oxide film 12 is formed on the surface of a silicon wafer 11, a resist 13 is applied to the entire surface, and then etching is accom plished for the removal of the thermal oxide film 12 from a region planned for the formation of a gate oxide film. The silicon wafer 11 is then subjected to an RCA rinse and washing with water for the formation of a thin natural oxide film 14. Next, the wafer 11 is irradiated with light from a lamp, a halogen lamp for example, for the rise of the wafer surface temperature up to 1,000[ deg.C], and is left for a minute in argon gas including some hydrogen. In this process, unsaturated bonds present in the surface of the silicon wafer 11 accept hydrogen atoms for saturation. Next, a thermal oxide film 15 is formed on the wafer surface,which is followed by the formation of a polycrystalline silicon film 16.

2. 发明专利

JPS61193458A TREATMENT OF SILICON WAFER 失效
公开(公告)号：JPS61193458A
公开(公告)日：1986-08-27
申请号：JP3318185
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/316 , H01L21/322
摘要： PURPOSE:To realize appropriate crystal characteristics by a method wherein a silicon wafer is heated to a temperature not lower than 800 deg.C in an atmosphere of hydrogen or inert gas containing some hydrogen for the effective elimination in a short period of time of oxygen precipitates from the silicon wafer surface containing inter-lattice oxygen. CONSTITUTION:An Si wafer 11 equipped with a resistivity of 5-20OMEGA/cm is subjected to heat treatment in an argon atmosphere including 10% of hydrogen for the elimination of oxygen precipitates in the vicinity 11a of the surface of the Si wafer 11. In this process, oxygen in the vicinity 11a of the surface of the Si wafer 11 is diffused outward from the surface of r the formation of a defect-free layer in the vicinity 11a of the wafer surface. Simultaneously, a layer containing few lattices is formed in the inside 11b of the wafer. A process follow wherein the wafer 11 is subjected to oxidation in a dry atmosphere at a temperature not lower than 800 deg.C, preferably at 1,000 deg.C, for the formation of an oxide film 12, whereon a polycrystalline silicon film 13 is subsequently formed containing phosphorus.

3. 发明专利

JPS61193459A TREATMENT OF SILICON WAFER 失效
公开(公告)号：JPS61193459A
公开(公告)日：1986-08-27
申请号：JP3318285
申请日：1985-02-21
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： YAMABE KIKUO , TAKAI NORIHEI , SHIRAI HIROSHI , WATANABE MASAHARU
IPC分类号： H01L21/316 , H01L21/322
摘要： PURPOSE:To equip a silicon wafer with appropriate charactristics by a method wherein an oxide film is formed on the surface of a silicon wafer, the silicon wafer is subjected to heat treatment that is accomplished at a temperature not lower than 800 deg.C in an atmosphere containing hydrogen, for the effective elimination in a short period of time of oxygen precipitates out of the silicon wafer surface containing inter-lattice oxygen. CONSTITUTION:An Si wafer 11 is placed in a dry oxygen atmosphere with the oxygen diluted to 10% by dry argon for the formation of an oxide film 12 on the wafer surface. The Si wafer 11 is then heat-treated in an argon atmosphere containing 10% of hydrogen for the elimination of oxygen precipitates for the vicinity 1a of the wafer surface. A process follows wherein the oxide film 12 is removed by etching. In this process, oxygen in the vicinity 11a of the surface of the Si wafer 11 is diffused outward from the surface for the formation of a defect-free layer in the vicinity 11a of the wafer surface. Simultaneously, a layer containing few lattices is formed in the inside 11b of the wafer 11. A process follows wherein the wafer 11 is subjected to oxidation in a dry atmosphere at a temperature not lower than 800 deg.C, preferably at 1,000 deg.C, for the formation of an oxide film 13. A polycrystalline silicon film 14 is then formed containing phosphorus.

4. 发明专利

JP2003240711A METHOD FOR MEASURING NITROGEN CONCENTRATION IN SILICON SINGLE CRYSTAL REARED BY CZOCHRALSKI METHOD 审中-公开
公开(公告)号：JP2003240711A
公开(公告)日：2003-08-27
申请号：JP2002044126
申请日：2002-02-21
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , KASHIMA KAZUHIKO
IPC分类号： G01N21/27 , G01N21/35 , G01N21/3563
摘要： PROBLEM TO BE SOLVED: To provide a method capable of easily measuring nitrogen concentration in a CZSi single crystal. SOLUTION: In the method for measuring nitrogen concentration in a silicon single crystal reared by Czochralski method, a reference of the silicon single crystal not containing a nitrogen and a thermal donor of a nitrogen-containing sample of an object to be measured are erased by using the sample containing the nitrogen and the reference of the silicon single crystal, and the nitrogen concentration is measured. In order to establish an easy and sure nitrogen concentration measuring method by considering that a base-line change is easy to occur in a 950-1,050 cm -1 region, the base-line of this region is stabilized. COPYRIGHT: (C)2003,JPO

5. 发明专利

JP2000269150A SEMICONDUCTOR WAFER HEATING TOOL AND SEMICONDUCTOR WAFER HEATER USING THE SAME 失效
公开(公告)号：JP2000269150A
公开(公告)日：2000-09-29
申请号：JP7651599
申请日：1999-03-19
申请人： TOSHIBA CERAMICS CO
发明人： SHIMIZU MIKIRO , YOSHIKAWA ATSUSHI , SAITO MASAMI , OMORI MAKIKO , SHIGENO YOSHINORI , SHIRAI HIROSHI , AMANO MASAMI , SHIN TAIRA , TANAKA JUNJI
IPC分类号： H01L21/683 , H01L21/205 , H01L21/22 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer heating plate-like tool, which can uniformly heat a semiconductor wafer without causing slips or defects even if the semiconductor wafer has a large diameter, and a mounter of the tool. SOLUTION: In a plate-like semiconductor wafer heating tool 2, in which a semiconductor wafer 1 is mounted on the upper face to heat it, the upper face has a circular margin of a diameter having one or more of a wafer to be processed, and also is formed in a recessed curve face shape having the deepest part at the center part, and a difference between heights, namely between a contact point position with a mounted wafer margin and the deepest part is in the range of 20 to 500 μm.

6. 发明专利

JPH0828353B2 失效
公开(公告)号：JPH0828353B2
公开(公告)日：1996-03-21
申请号：JP33354088
申请日：1988-12-28
申请人： TOSHIBA CERAMICS CO
发明人： KIRINO YOSHIO , SHIRAI HIROSHI , MORISHIMA KAZUHIRO , KURIHARA SEIJI , YOSHIKAWA ATSUSHI
IPC分类号： H01L21/316

7. 发明专利

JPH0862132A WAFER HOLDER FOR MEASURING INFRARED ABSORPTION 失效
公开(公告)号：JPH0862132A
公开(公告)日：1996-03-08
申请号：JP21959394
申请日：1994-08-23
申请人： TOSHIBA CERAMICS CO
发明人： SAITO HIROYUKI , SHIRAI HIROSHI
IPC分类号： G01J3/02 , G01N1/28 , G01N21/35 , G01N21/3563 , H01L21/66 , H01L21/68 , H01L21/683
摘要： PURPOSE: To enhance S/N ratio by forming a funnel-like inclining face having a specified angle at an infrared ray incident opening being substantially elliptic thereby reducing the useless light and increasing the light ariving at an infrared detector. CONSTITUTION: Two infrared luminous fluxes 4 from a light source pass a polarizer 17 to produce P polarized lights which impinge on a silicon wafer sample 1 and a reference 6, respectively. A wafer holder 3 has two infrared ray incident openings 14 each defining a substantially elliptical hole 13, and a tunnel-like inclining face 15, 16 is formed at each opening 14. The inclination angle of the inclining face 15, 16 is set, on the side closer to the infrared light source, at 73.7 deg. or above with respect to a line normal to the plane of the wafer holder 3 holding the sample 1 and reference 6 and at 16.3 deg. or above on the side distant from the infrared light source. Consequently, the opening does not substantially impede the incident light at the time of measuring the Brewster's incident angle of P polarized light.

8. 发明专利

JPH07165495A SILICON WAFER 失效
公开(公告)号：JPH07165495A
公开(公告)日：1995-06-27
申请号：JP23251694
申请日：1994-09-02
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , TAKAI NORIHEI , KIRINO YOSHIO , AKAI KENJI , KON TAKESHI , NAKANISHI HIROMITSU
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322 , H01L21/324
摘要： PURPOSE:To obtain a silicon wafer with low crystal defect density. CONSTITUTION:This silicon wafer is such as to have been subjected to heat treatment by staying in a hydrogen gas atmosphere at 1000-1350 deg.C for .

9. 发明专利

JPH06295912A MANUFACTURE OF SILICON WAFER AND SILICON WAFER 失效
公开(公告)号：JPH06295912A
公开(公告)日：1994-10-21
申请号：JP8355893
申请日：1993-04-09
申请人： TOSHIBA CERAMICS CO
发明人： SENSAI KOUJI , SHIRAI HIROSHI , YOSHIKAWA ATSUSHI , KASHIMA KAZUHIKO , KIRINO YOSHIO
IPC分类号： H01L21/02 , H01L21/322
摘要： PURPOSE:To make defectless the active layer of a device and to make low the density of oxygen deposits of the bulk part of a wafer by a method wherein a silicon wafer having a specified interstitial oxygen concentration is subjected to heat treatment in a hydrogen gas atomsphere under specified heat-treating conditions and is formed into the wafer having the distribution of the specified density of oxygen deposits. CONSTITUTION:A silicon wafer having an interstitial oxygen concentration Oi of 1.5 to 1.8X10 atoms/cm is subjected to heat treatment in a hydrogen gas atmosphere under conditions that a heat-treating temperature is 1100 to 1300 deg.C, a heat-treating time is one minute to 48 hours and a heating-up speed within a temperature range of 1000 to 1300 deg.C in a heat-treating process is 15 to 100 deg.C/min. By this method, a wafer, which has a defect less layer containing 10 piece/cm or less of BMDs of a size of 20nm or larger extending over at least a depth of 10mum or deeper from the surface of the wafer and has the density BMD of oxygen deposits, which is set under the conditions of BMD>=1X10 piece/cm and BMD XOi+3.244}piece/cm , of the internal bulk part of the wafer, can be manufactured.

10. 发明专利

JPH04109145A SUBSTITUTION TYPE CARBON CONCENTRATION MEASURING METHOD FOR PICKUP SILICONE WAFER 失效
公开(公告)号：JPH04109145A
公开(公告)日：1992-04-10
申请号：JP22745390
申请日：1990-08-29
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , WATANABE MIKIO
IPC分类号： G01N31/00 , C30B29/06 , G01N21/21 , G01N21/59
摘要： PURPOSE:To simplify the carbon concentration measuring work of a pickup silicone wafer by using the light transmission characteristic of the pickup silicone wafer mirror-polished on the surface and the light transmission characteristic of a floating zone silicone wafer mirror-polished on both the surface and back face. CONSTITUTION:The interference light generated by a Michelson interferometer 12 from the light fed from a light source 11 is parallelly polarized by a polarizer 13 then fed to a sample M (a pickup silicone wafer mirror-polished on the surface) and an object R (a floating zone silicone wafer as the object mirror- polished on both the surface and back face). Absorption and scattering are performed on the sample M and object R according to optical characteristics, and the absorption characteristic is calculated by a calculating device 15 from the detection result of a detector 14. The device 15 calculated the light absorption coefficient of the sample M and calculated the substitution type carbon concentration of the sample M.

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