专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2004296764A Stack for flat semiconductor element and power converter using it 审中-公开
标题翻译：平板半导体元件和功率转换器堆栈使用它
公开(公告)号：JP2004296764A
公开(公告)日：2004-10-21
申请号：JP2003086803
申请日：2003-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YANO TOSHIYUKI , HASHIMOTO TAKASHI , MIYAIRI MASAKI
IPC分类号： H01L23/36 , H01L25/11
摘要： PROBLEM TO BE SOLVED: To provide a stack for a flat semiconductor element capable of decreasing a thermal distortion caused by a power loss in the flat semiconductor element.
SOLUTION: The stack for the flat semiconductor element has two flat semiconductor elements, two coolers for cooling the flat semiconductor elements provided to each of the two flat semiconductor elements, and two metal blocks arranged to the opposite side of the cooler of the two flat semiconductor elements. The stack further has an insulating base engaged with an opposite side of the semiconductor element of the two coolers; an elastic body engaged with at least one insulating base to pressurize a laminated body comprising two flat semiconductor elements, two coolers, two metal blocks, and an insulator; a pressure supporting plate engaged with the elastic body; and a pressurizing means provided to the pressure power supporting body consisting of the elastic body and a pressure supporting plate.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够降低由平坦半导体元件中的功率损耗引起的热失真的平坦半导体元件的堆叠。解决方案：用于平坦半导体元件的堆叠具有两个平坦的半导体元件，用于冷却设置到两个平坦半导体元件中的每一个的平坦半导体元件的两个冷却器和布置在两个平坦半导体元件的冷却器的相对侧上的两个金属块两个平面半导体元件。堆叠还具有与两个冷却器的半导体元件的相对侧接合的绝缘基座; 与至少一个绝缘基体接合的弹性体，以对包括两个平坦半导体元件，两个冷却器，两个金属块和绝缘体的层压体加压; 与弹性体接合的压力支撑板; 以及设置在由弹性体和压力支撑板构成的压力动力支撑体上的加压装置。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2000243886A COOLING BODY FOR POWER SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JP2000243886A
公开(公告)日：2000-09-08
申请号：JP4248599
申请日：1999-02-22
申请人： TOSHIBA CORP
发明人： YANO TOSHIYUKI , KUSHIBIKI RYOICHI , IMURA MASAYUKI
IPC分类号： H01L23/473
摘要： PROBLEM TO BE SOLVED: To improve cooling efficiency for internal percolation type, with no increase in cooling-liquid pressure. SOLUTION: A round hole is opened at the center of a cooling body 1 from both surfaces, a plurality of metal cylinders 4 are arranged at a diaphragm 3 which is to be the bottom of the hole, and an O-ring 2 is fitted to the outer periphery of the round hole, with an inlet piping 6a for a cooling liquid and outlet piping 6b attached. The cooling body 1 configured like this and a semiconductor element are press-contacted for lamination, so that the cooling liquid 5 in the cooling body directly contacts the electrode surface of the power semiconductor element, for improved cooling efficiency.

3. 发明专利

JPH07176686A THYRISTOR VALVE 失效
公开(公告)号：JPH07176686A
公开(公告)日：1995-07-14
申请号：JP31885093
申请日：1993-12-20
申请人： TOSHIBA CORP
发明人： YANO TOSHIYUKI , MATSUMOTO HISAAKI , IMURA MASAYUKI
IPC分类号： H01L25/07 , H01L25/18
摘要： PURPOSE:To obtain a thyristor valve excellent in aseismic strength by a constitution wherein a plurality of insulating struts made of reinforced plastic are arranged concentrically at a constant interval and thyristor modules are stacked polygonally in a plurality of stages between the insulating struts through module supporting boards. CONSTITUTION:Twelve insulating struts 1 are arranged concentrically and three insulating struts are arranged in the center. A module supporting board 2 is pierced by two insulating struts 1 along with fixing rings 3 and bonded to the insulating struts 1 through an adhesive so that a module 4 is secured between adjacent supporting boards 2 by means of bolts 5. The module 4 is secured such that a thyristor stack 8 is set on the inner peripheral side whereas a capacitor 9 is set on the outer peripheral side and a resistor 10 is disposed therebetween. The stack 8, the resistor 10 and the capacitor 9 are secured collectively to a metal vessel which is then secured to the module supporting board 2 by means of the bolts 5. This structure suppresses the stress generated in the module and the insulating strut thus enhancing aseismic strength.

4. 发明专利

JPH06135322A BUSH FOR GROUND COIL OF SUPERCONDUCTING MAGNETIC LEVITATION TYPE RAILROAD AND GROUND COIL 失效
公开(公告)号：JPH06135322A
公开(公告)日：1994-05-17
申请号：JP28865692
申请日：1992-10-27
申请人： TOSHIBA CORP
发明人： KOBAYASHI YOSHITAKA , KASAHARA NORIKO , SAIMA TORU , KOYAMA MICHIHIKO , YANO TOSHIYUKI
IPC分类号： B60L13/04 , B60L13/03 , B61B13/08 , H01F6/00 , H01L39/04 , H01F5/08 , H01F7/22
摘要： PURPOSE:To facilitate torque control, to reduce generation of excess current, to prevent destruction from around a through hole by means of external force, to easily absorb thermal elongation, and to facilitate flat surface control of the side wall of an orbit or a ground coil itself. CONSTITUTION:Bush units 11A, 11B of the same structure, are provided. The bush unit 11A is formed of non-magnetic metal or ceramic, and a through hole 12a is provided in the center thereon. An inner shell body 12, for which the outside in the axial direction is defined as a bell-mouthed circumferential part 12c, a rubber part 13 provided in an integrate manner so that the thickness is almost equal to the outer periphery of the inner shell body 12, and an intermediate metallic body 14, which is made of non-magnetic metal, and is formed into a hollow headed cone, and which is embedded in the outside in the axial direction of the rubber part 13, are also provided.

5. 发明专利

JPH05318502A INSULATION RESIN-CASTING DEVICE AND CASTING METHOD 失效
公开(公告)号：JPH05318502A
公开(公告)日：1993-12-03
申请号：JP24607392
申请日：1992-09-16
申请人： TOSHIBA CORP
发明人： KOYAMA MICHIHIKO , KAGAWA YOSHIHIRO , MAKISHIMA SATOSHI , YANO TOSHIYUKI , SHIMIZU TOSHIO
IPC分类号： B29C33/12 , B29C39/10 , B29C39/26 , B29C39/44 , B29K101/10 , B29K105/20 , B29L31/34
摘要： PURPOSE:To enable the long maintenance initial insulation characteristics of casting resin without difficulty by operating a driving portion of a supporting means when casting resin is detected to have reached its fluidity limit and by drawing the supporting member from a metal mold. CONSTITUTION:A conductor 4 which is to be casted in a metal mold 2 is firmly fixed at a specified position in the metal mold 2 by supporting means that are protrudingly provided within the mold 2. Then, casting resin 3 is poured into the metal mold and heat-hardened. While the casting resin 3 is being heat- hardened, the progress of its heat-hardening is detected by a detector installed in the mold 2, and at the time when the progress of reaction has reached fluidity limit, the supporting means are pulled out from inside of the metal mold 2. The clearances resulted from pulling out of the supporting means are filled by the remaining casting resin 3 which still has fluidity, and hardened with no trace left, forming an insulation layer sounding the outer periphery of the conductor 4.

6. 发明专利

JPH05249177A 失效
公开(公告)号：JPH05249177A
公开(公告)日：1993-09-28
申请号：JP5009092
申请日：1992-03-09
申请人： TOSHIBA CORP
发明人： YANO TOSHIYUKI , SHIMIZU TOSHIO , TAKANO IKUO
IPC分类号： G01N3/32 , G01N3/34 , G01R31/12
摘要： PURPOSE:To diagnose the degree of deterioration of an insulating material and the remaining service life of the material until the insulating property of the material becomes insufficient by finding the degree of impact fatigue of the material. CONSTITUTION:The deterioration of an insulating material can be diagnosed from a decline in impact fatigue strength. A linear relation exists between the degree of impact fatigue of the material after arbitrary periods of time t1, t2, and t3 and the degree of initial fatigue 4 of the material. A difference in degree of deterioration appears as a difference in impact fatigue strength after an arbitrary period of time. The area 14 shown in the diagram represents the area of insufficient insulation of the material which can be regarded as the service life of the material. In addition, the impact fatigue characteristic of the material the insulating property of which becomes insufficient also has a nearly linear relation against the impact fatigue strengths at the periods of time t1, t2, and t3. Therefore, the impact fatigue strength 6 of the insulating material is first checked at time of diagnosing the deterioration of the material. Then the strength 6 is connected to the strength 4 with a straight line and the time until the straight line crosses the area 14 can be regarded as the remaining service life 15 of the material.

7. 发明专利

JPH0416739A APPARATUS FOR TESTING BENDING FATIGUE OF WIRE ROPE 失效
公开(公告)号：JPH0416739A
公开(公告)日：1992-01-21
申请号：JP12207090
申请日：1990-05-11
申请人： TOSHIBA CORP
发明人： YANO TOSHIYUKI , NAKAGAWA TOSHIAKI
IPC分类号： G01N3/34
摘要： PURPOSE:To perform fatigue tests at two portions simultaneously per rope by supporting both ends of a wire rope and reciprocating sheaves. CONSTITUTION:Rotation of a driving wheel 9 is converted by a coupling rod 8 into reciprocating motion of a movable mount 3 with sheaves 2a, 2b attached. A wire rope 1 rolled on the sheaves 2a, 2b is subjected to repetition of bending and stretching. Since the sheaves 2a, 2b freely rotate by themselves, they follow lateral reciprocating motion, and even when a direction is changed laterally, the wire rope 1 gives bending deformation without sliding on the sheaves 2a, 2b. Reciprocating speed of the sheaves 2a, 2b exhibits a since curve due to a crank mechanism so that smooth and rapid repetition can be done. In addition a severe test such as S-bending can be done by changing positions of the sheaves 2a, 2b. Since a part to be bent is a part to be in contact with a sheave, a single rope permits simultaneous fatigue tests on two portions.

8. 发明专利

JP2013236004A Pressure-welding semiconductor device and pressure-welding method of the same 有权
标题翻译：压力焊接半导体器件及其压焊方法
公开(公告)号：JP2013236004A
公开(公告)日：2013-11-21
申请号：JP2012108432
申请日：2012-05-10
申请人： Toshiba Corp , 株式会社東芝 , Toshiba Mitsubishi-Electric Industrial System Corp , 東芝三菱電機産業システム株式会社
发明人： YANO TOSHIYUKI , TSUNEOKA OSAMU , TAKENAKA HIROSHI , KARASAWA MASARU , TSUMENAGA MASAHIRO , NAKAJIMA AKIRA , OMOTE KENICHIRO
IPC分类号： H01L25/07 , H01L23/40 , H01L23/473 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a pressure-welding semiconductor device which reduces the costs, presses with an equal pressure-welding pressure, and achieves high reliability.SOLUTION: A pressure-welding semiconductor device includes: a semiconductor substrate having multiple semiconductor elements; a first cooling mechanism and a second cooling mechanism which are respectively provided on front and rear surfaces of the semiconductor substrate sandwiching the semiconductor substrate therebetween; a first insulation member and a second insulation member which are respectively provided on a front surface of the first cooling mechanism and a rear surface of the second cooling mechanism; and a pressing mechanism sandwiching the first insulation member and the second insulation member from the front and rear surfaces and pressing an area between the first insulation member and the second insulation member with a predetermined pressure. Recessed parts are provided on one of or both of a first pressure welding surface of the first cooling mechanism, which contacts with the first insulation member, and a second pressure welding surface of the second cooling mechanism which contacts with the second insulation member.
摘要翻译：要解决的问题：提供降低成本的压焊半导体器件，以相同的压焊压力进行压制，并且实现高可靠性。压焊半导体器件包括：具有多个半导体元件的半导体衬底; 第一冷却机构和第二冷却机构分别设置在半导体基板的夹在其间的半导体基板的前表面和后表面; 分别设置在第一冷却机构的前表面和第二冷却机构的后表面上的第一绝缘构件和第二绝缘构件; 以及按照预定压力将第一绝缘构件和第二绝缘构件从前表面和后表面夹持并按压第一绝缘构件和第二绝缘构件之间的区域的按压机构。在第一冷却机构的与第一绝缘部件接触的第一压力焊接面和与第二绝缘部件接触的第二冷却机构的第二压力接合面的一个或两侧设置有嵌入部。

9. 发明专利

JP2003168778A STACK FOR FLAT SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：JP2003168778A
公开(公告)日：2003-06-13
申请号：JP2001368123
申请日：2001-12-03
申请人： TOSHIBA CORP
发明人： YANO TOSHIYUKI , NISHI TADASHI
IPC分类号： H01L25/11 , H02M1/00
摘要： PROBLEM TO BE SOLVED: To provide a stack for a flat semiconductor element having a connection structure of an insulation rod and a pressurizing support plate capable of keeping pressure contact. SOLUTION: A plurality of the flat semiconductor elements 3 and heat sinks 4 are alternately stacked on the inner side of a frame constituted of the insulation rod 2, and conductors 5 are clamped at both ends. A spherical seat 6 and a belleville spring 7 are provided on a stacked body in its upper part, and a lower pressurizing support plate 9 and an upper pressurizing supporting plate 8 supporting them at both ends are arranged. The insulation rod 2 and a connecting metal fitting 10 are connected through a pin 11 attached through a hole provided in the radial direction, the connecting metal fitting 10 of the insulation rod 2 is passed through the upper pressurizing supporting plate 8 and the lower pressurizing support plate 9 and then fixed with a nut 12, and thus the pressure contact of the stack 1 is kept. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2001037230A MUTLI-POINT PRESSURIZATION TYPE SPHERICAL PLANE SEAT FOR SEMICONDUCTOR STACK AND BOLT 失效
公开(公告)号：JP2001037230A
公开(公告)日：2001-02-09
申请号：JP20130499
申请日：1999-07-15
申请人： TOSHIBA CORP
发明人： TOMINAGA ISAMU , YANO TOSHIYUKI
IPC分类号： H02M7/04
摘要： PROBLEM TO BE SOLVED: To facilitate the centering in the pressurization axis direction during the pressure application work of a multi-point pressurization type semiconductor stack by providing a projected area in contact with a bolt in the side of the plane in contact with the bolt. SOLUTION: Structure of a spherical plane seat and bolt as the principal elements is indicated. In this embodiment, a columnar projected part 11 that is internally in contact with four bolts 4A is provided almost at the center of the bolt contact surface side of the spherical plane seat 3C. Since the centering in the pressurization axis direction of the spherical plane seat 3C can be done easily during the pressurization time, equal pressurization may be realized. Thereby, during the pressurization time of the multi-point pressurization type semiconductor stack used for conversion between a large capacity AC power and DC power, the centering in the pressure application axis direction of the spherical plane seat 3C for semiconductor stack can be done easily.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式