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1. 发明专利

JPH06248421A CERAMIC THIN FILM AND ITS PRODUCTION 失效
公开(公告)号：JPH06248421A
公开(公告)日：1994-09-06
申请号：JP3723193
申请日：1993-02-26
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , KURI YUUJI , WATANABE MICHIO
IPC分类号： C23C14/06 , C23C14/32
摘要： PURPOSE:To easily produce the ceramic thin film having corrosion resistance and reliability by forming plural TiN ceramic layers under prescribed conditions on the surface of a heated base material. CONSTITUTION:The base material 1 is heated and the surface of the base material 1 is coated with one layer of the ceramic thin film 2. A boundary is then formed on the surface of the thin film 2 and thereafter, the surface is continuously coated with the thin film 3 of the same kind as the ceramic thin film 2 to 2 to 8mum total film thickness. A method of coating the surface with TiN by continuously evaporating Ti to effect reaction while continuously supplying gaseous N2 into the vacuum and making the same operation again after once interrupting the operation is used as the coating.

2. 发明专利

JPH0673526A THIN CERAMIC FILM 失效
公开(公告)号：JPH0673526A
公开(公告)日：1994-03-15
申请号：JP22657192
申请日：1992-08-26
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , KURI YUUJI , WATANABE MICHIO
IPC分类号： C23C14/06
摘要： PURPOSE:To obtain a thin ceramic film having enhanced adhesive strength by successively forming a thin pure metal film using the same metallic element as a thin oxide film and a thin nitride film using the same metallic element as the thin oxide film on the surface of a substrate when the thin oxide film is formed on the surface of the substrate. CONSTITUTION:When a thin oxide film 2 (e.g. Al2O3) is formed on the surface of a substrate 1 made of a metallic material, a thin pure metal film 3 (e.g. Al) using the same metallic element as the thin oxide film is first formed as an undercoat layer on the surface of the substrate 1. A thin nitride film 4 (e.g. AlN) using the same metallic element as the thin oxide film 2 is further formed on the surface of the thin pure metal film 3 and then the thin oxide film 2 is formed on the thin nitride film 4 to obtain the objective thin ceramic film having enhanced adhesive strength without deteriorating electric insulating property or wear resistance.

3. 发明专利

JPH0520981A VACUUM CIRCUIT BREAKER 失效
公开(公告)号：JPH0520981A
公开(公告)日：1993-01-29
申请号：JP16792791
申请日：1991-07-09
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , SOMA SHIGEO , NIIDE TATSUAKI , OSHIUMI KATSUMI , OKUTOMI ISAO
IPC分类号： H01H33/66
摘要： PURPOSE:To prevent a drop in the degree of vacuum, and provide a vacuum circuit breaker of high reliability by properly exhausting the breaker of gases generated during a degasification process, and preventing the occurrence of a crack during a press-fitting process. CONSTITUTION:An exhaust tube 13 fixed to a lid body 3a at one side of an insulation vessel 1 for discharging outside gases generated therein, is molded with one of Ni, Al, Ti and stainless steel. Alternatively, the tube 13 is molded with a metallic material and the surface thereof is covered with a film of 3mum thickness or above comprising one of Ni, Al, Ti and stainless steel. Also, a deposition member 14 is fitted to one end of the tube 13 in the vessel 1 for causing generated gases to deposit thereon, and the same type of a molding material is used for both the tube 13 and member 14.

4. 发明专利

JPH0220077A MANUFACTURE OF GREEN-LIGHT EMITTING DIODE 失效
公开(公告)号：JPH0220077A
公开(公告)日：1990-01-23
申请号：JP17025388
申请日：1988-07-08
申请人： TOSHIBA CORP
发明人： WATANABE MASAYUKI , NAKAJIMA MASAHIRO
IPC分类号： H01L33/16 , H01L33/30
摘要： PURPOSE:To make it possible to manufacture a green LED having high outer light emitting efficiency with good reproducibility at a low cost even if a GaP substrate at a commercially sold level is used by using a specified GaP single crystal wafer. CONSTITUTION:The cleavage plane (110) of a wafer undergoes anodic oxidation in, e.g., aqueous solution of KOH at an approximately one normal, and variable- density stripes of oxide films are obtained. An angle theta between the straight line of said stripe in the longitudinal direction and a straight line formed by the intersection between the cleavage plane and the (111) plane of the wafer does not exceed 5 degrees in the GaP single crystal wafer 1. Said GaP single crystal wafer is used in this diode. The variable-density stripes 7 are formed on the (110) cleavage plane 6 of the wafer 1. The angle theta between a straight line A-A' in the longitudinal direction, i.e., the stripe direction of the variable- density stripe 7 and a straight line B-B' at the intersection between the (110) cleavage plane and the (111) P plane 8 of the wafer is less than 5 degrees. The wafer having this property is used. After an oxide film is removed, an Si doped N layer 2 and a Zn doped P layer 3 are formed on the (111) P plane of the main surface of the wafer by liquid phase growing method.

5. 发明专利

JPS63282251A SURFACE HARDENING TREATMENT 失效
公开(公告)号：JPS63282251A
公开(公告)日：1988-11-18
申请号：JP11583587
申请日：1987-05-14
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , KAWABE MASUO , KIMURA SEIICHIRO
IPC分类号： C23C12/00
摘要： PURPOSE:To considerably improve the wear resistance of carbon steel or alloy steel in spite of the low Cr content and to considerably prolong the service life by forming an alloy layer contg. a specified amt. or more of Cr on the surface of the steel having less than a specified Cr content and by carrying out nitriding. CONSTITUTION:Cr powder 2 is spread on the surface of carbon steel or alloy steel 1 having =4wt.%. Laser light 5 having high energy density is generated from generator 3, condensed with a condensor 4 and radiated on the powder 2 to melt the surface of the steel 1 and the powder 2. By this melting, an alloy layer 6 contg. >=4wt.% Cr is formed and then nitriding is carried out to form a compd. layer 7.

6. 发明专利

JPS6369429A POWER DEMAND PREDICTING APPARATUS 失效
公开(公告)号：JPS6369429A
公开(公告)日：1988-03-29
申请号：JP20953286
申请日：1986-09-08
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO
IPC分类号： H02J3/00

7. 发明专利

JPS59197128A Liquid-phase epitaxial growing method of iii-v group compound semiconductor 失效
标题翻译： III-V族化合物半导体的液相外延生长方法
公开(公告)号：JPS59197128A
公开(公告)日：1984-11-08
申请号：JP6999483
申请日：1983-04-22
申请人： Toshiba Corp
发明人： NAKAJIMA MASAHIRO
IPC分类号： H01L21/208 , H01L33/30
CPC分类号： H01L21/02395 , H01L21/02546 , H01L21/02625
摘要： PURPOSE:To suppress the quantities of evaporation of volatile components and improve crystallinity, and enhance luminous effeiciency by introducing the gas of one element having high volatility of compound as a III-V group compound semiconductor substrate while increasing the partial pressure of the gas. CONSTITUTION:A boat 7 made of carbon is charged and arranged into a reaction vessel 11, and a quartz boat 12 is charged. A GaAs substrate is entered into the lower plate 2 of the boat 7, the melted liquid of Ga and a GaAs polycrystal into the through-hole of an upper plate 1 and As 13 into the boat 12. The boat 12 is disposed to a low temperature section and the boat 7 to a high temperature section. As disperses into hydrogen under the state, and begins to flow to the downstream as a mixed gas of hydrogen and As. When an exhaust valve 14 at the end section of the vessel 11 is throttled and the inside of the vessel 11 is pressured at that time, the boat 7 is positioned in the atmosphere of the mixed gas. The lower plate 2 is slid, the melted liquid is brought into contact on the substrate and the temperature of the liquid is dropped at fixed speed, and the lower plate 2 is slid again and returned to an original position. Accordingly, a crystal in a growth layer is improved because the evaporation of an element having large volatility can be controlled.
摘要翻译：目的：为了抑制挥发成分的蒸发量，提高结晶性，通过在增加气体的分压的同时引入具有高挥发性的化合物的一种元素的气体作为III-V族化合物半导体衬底，提高发光效率。构成：将由碳制成的船7装入反应容器11并装入石英舟12。 GaAs衬底进入船7的下板2，熔融的Ga和GaAs多晶体的液体进入上板1和As13的通孔进入船12中。船12被设置为低温度段和船7到高温段。在这种状态下分散到氢气中，并开始以氢气和As的混合气体流向下游。当在容器11的端部处的排气阀14节流并且容器11的内部被压力时，船7位于混合气体的气氛中。下板2滑动，熔融的液体在基板上接触，液体的温度以固定的速度下降，下板2再次滑动并返回原来的位置。因此，可以控制生长层中的晶体，因为可以控制挥发性大的元素的蒸发。

8. 发明专利

JPH04245122A SWITCH DEVICE 失效
公开(公告)号：JPH04245122A
公开(公告)日：1992-09-01
申请号：JP1125391
申请日：1991-01-31
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , KURI YUUJI , SATO KIMIYA , KIKUCHI MASAAKI , WATANABE MICHIO
IPC分类号： C23C8/34 , F16C7/02 , H01H3/46 , H01H33/42
摘要： PURPOSE:To reduce a friction coefficient, dispense with lubricant and enhance an operating characteristic and reliability by laminating a nitriding layer and an oxidizing film on the surface of a sliding portion made of a steel material in an operating link mechanism, and coating the surface with titanium carbide. CONSTITUTION:A sliding portion of an operating link mechanism of a switch device is made of a steel material (a). A nitriding layer (c) is formed on the surface of the steel material (a), and an oxidizing film (d) is formed on the layer (c). The film (d) is coated with a coating material made of titanium carbide (e). Consequently, a friction coefficient of the sliding portion can become small and abrasion cannot be generated, thus dispensing with lubricant without applying grease to the sliding portion. As a result, it is possible to make unnecessary periodic maintenance due to secular deterioration of grease and to enhance an operating characteristic and reliability for a long time.

9. 发明专利

JPH04126796A OPENING AND CLOSING DEVICE 失效
公开(公告)号：JPH04126796A
公开(公告)日：1992-04-27
申请号：JP24539590
申请日：1990-09-14
申请人： TOSHIBA CORP
发明人： KURI YUUJI , NAKAJIMA MASAHIRO , KIKUCHI MASAAKI , WATANABE MICHIO , SATO KIMIYA
IPC分类号： F16C7/02 , C09K3/00 , C10M103/06 , C10N40/14 , C10N50/08 , C23C14/06 , C23C28/04 , H01H33/42 , H01H33/66
摘要： PURPOSE:To obtain a opening and closing device improved in action characteristics and reliability over a long period without causing crack, etc., by forming a nitride layer on the surface of a sliding member consisting of a steel material and applying a TiC coating material on the surface of the layer. CONSTITUTION:A nitride layer having about 3-40mum thickness is formed on the surface of at least either one of sliding members made of a steel material, having an operating link mechanism and mutually sliding and a coating material of TiC is applied to the surface of the layer to form a titanium carbide layer having about 3-5mum thickness. Further, as necessary, a coating material consisting of only TiN is applied to the surface of the sliding member consisting of other steel material to form a titanium nitride layer.

10. 发明专利

JPH03149651A DEVICE FOR ACKNOWLEDGING ELECTRONIC DOCUMENT 失效
公开(公告)号：JPH03149651A
公开(公告)日：1991-06-26
申请号：JP28800989
申请日：1989-11-07
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO
IPC分类号： G06F17/21
摘要： PURPOSE:To acknowledge a document prepared as an electronic document in a terminal without temporarily printing out it by synthesizing an acknowledged image with a document displayed on a display means when inputted personal identification information is decided as a valid information and the acknowledgement of the document is instructed by an instructing means. CONSTITUTION:A document body data file 2 stores the document data of plural documents, a recognition image file 3 stores an image such as a seal to be impressed on a document to be acknowledged or a sign and a password file 4 stores a password, a personal name and the name of the file 3 for storing the image of the person's seal impression or sign. When personal identification information inputted by an input means 5 is decided as a valid one by a checking means 200 and the acknowledgement of the document is instructed by the instructing means 5, a document data handling device 100 synthesizes the acknowledgement image stored in the means 3 with the document displayed on a display means 5. Consequently, the prepared document can be acknowledged in the electronized state without printing it.

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