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1. 发明专利

JP2013201391A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013201391A
公开(公告)日：2013-10-03
申请号：JP2012070227
申请日：2012-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA KENJI , FUJIMOTO AKIRA , NAKANISHI TSUTOMU , KITAGAWA RYOTA , ASAKAWA KOUJI , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO
IPC分类号： H01L33/44
CPC分类号： H01L33/58 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that allows improving light extraction efficiency.SOLUTION: A semiconductor light-emitting element includes a stack an optical layer. The stack has a primary surface and includes a light-emitting layer. The optical layer is provided so as to be in contact with the primary surface of the stack, and includes a dielectric body, a plurality of first particles having a different refractive index from the dielectric body, and a plurality of second particles having a different refractive index from the dielectric body. The optical layer has a first region that includes the dielectric body and the plurality of first particles but does not include the plurality of second particles; and a second region that includes the dielectric body and the plurality of second particles. The sphere-equivalent diameter of the first particles is more than or equal to 1 nm and is less than or equal to 100 nm. The sphere-equivalent diameter of the second particles is more than 300 nm and is less than 1000 nm. The average refractive index of the first region is more than the refractive index of the stack and is less than the refractive index of the second particles.
摘要翻译：要解决的问题：提供一种能够提高光提取效率的半导体发光元件。解决方案：半导体发光元件包括堆叠光学层。该叠层具有主表面并且包括发光层。光学层设置成与堆叠的主表面接触，并且包括电介质体，具有与电介质体不同的折射率的多个第一颗粒和具有不同折射率的多个第二颗粒电介质体的折射率。光学层具有包含电介质体和多个第一粒子但不包含多个第二粒子的第一区域; 以及包括电介质体和多个第二粒子的第二区域。第一颗粒的球当量直径大于或等于1nm且小于或等于100nm。第二粒子的球当量直径大于300nm，小于1000nm。第一区域的平均折射率大于叠层的折射率，小于第二颗粒的折射率。

2. 发明专利

JP2013033978A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013033978A
公开(公告)日：2013-02-14
申请号：JP2012203642
申请日：2012-09-14
申请人： Toshiba Corp , 株式会社東芝
发明人： KURONAGA KOICHI , MATSUNAGA NORIHIKO , KONDO KATSUAKI , NUNOTANI NOBUHITO
IPC分类号： H01L33/10 , H01L33/30 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with enhanced light extraction efficiency and luminance.SOLUTION: A semiconductor light-emitting element includes a light-emitting layer 40 composed of a group III-V compound semiconductor, a first electrode 20 having a reflective metal layer, an insulating layer 90 having openings, a first-conductivity-type layer 37, a second-conductivity-type layer 50, and a second electrode 60. The first-conductivity-type layer is provided on the first electrode and under the light-emitting layer, and is composed of a group III-V compound semiconductor having a larger band-gap energy than the light-emitting layer. The first-conductivity-type layer includes a first contact layer 32, a composition gradient layer 31, and a first cladding layer 29. The second-conductivity-type layer is provided between the light-emitting layer and the second electrode, and has a current diffusion layer 54 and a second contact layer 56. The second electrode has a pad portion 60a and thin-line portions 60b extending from the pad portion toward the outside on the second contact layer. As viewed from the top, the openings of the insulating layer and the second contact layer are not overlapped.
摘要翻译：解决的问题：提供具有增强的光提取效率和亮度的半导体发光元件。解决方案：半导体发光元件包括由III-V族化合物半导体构成的发光层40，具有反射金属层的第一电极20，具有开口的绝缘层90，型层37，第二导电型层50和第二电极60.第一导电型层设置在第一电极和发光层下方，由III-V族化合物半导体具有比发光层更大的带隙能量。第一导电型层包括第一接触层32，组成梯度层31和第一包层29.第二导电型层设置在发光层和第二电极之间，并且具有电流扩散层54和第二接触层56.第二电极具有焊盘部分60a和在第二接触层上从焊盘部分向外延伸的细线部分60b。从顶部观察，绝缘层和第二接触层的开口不重叠。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012186427A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012186427A
公开(公告)日：2012-09-27
申请号：JP2011050248
申请日：2011-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO AKIRA , KITAGAWA RYOTA , MASUNAGA KUMI , NAKAMURA KENJI , NAKANISHI TSUTOMU , ASAKAWA KOUJI , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO
IPC分类号： H01L33/38 , H01L21/28
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting element comprises a structure, a first electrode layer, an electrode layer, and an inorganic film. The structure has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The electrode layer is provided on the second semiconductor layer side of the structure. The electrode layer has a metal portion and a plurality of openings. The metal portion has a thickness ranging from 10 nm or more to 100 nm or less along the direction toward the second semiconductor layer from the first semiconductor layer. The openings penetrate through the metal portion along the direction and have a circle-equivalent diameter ranging from 10 nm or more to 5 μm or less. The inorganic film has a thickness ranging from 20 nm or more to 200 nm or less along the direction, is provided so as to cover a surface of the metal portion and the inner surfaces of the openings, and has permeability to light emitted from the light-emitting layer.
摘要翻译：要解决的问题：提供可以实现高亮度并提供其制造方法的半导体发光元件。解决方案：半导体发光元件包括结构，第一电极层，电极层和无机膜。该结构具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。电极层设置在该结构的第二半导体层侧。电极层具有金属部分和多个开口。金属部分的厚度范围从第一半导体层沿着朝向第二半导体层的方向为10nm以上至100nm以下。这些开口沿着该方向穿过金属部分，并且具有范围在10nm以上至5μm以下的圆当量直径。无机膜沿着该方向的厚度为20nm以上且200nm以下，设置为覆盖金属部的表面和开口的内表面，并且具有从光发出的光的渗透性发光层。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012059792A Semiconductor light-emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012059792A
公开(公告)日：2012-03-22
申请号：JP2010199417
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO AKIRA , ASAKAWA KOUJI , KITAGAWA RYOTA , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO , TSUTSUMI EIJI , OGAWA MASAAKI
IPC分类号： H01L33/38 , H01L29/41 , H01L33/14 , H01L33/42
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance and a manufacturing method of the same.SOLUTION: The semiconductor light-emitting element according to an embodiment comprises: a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a luminescent layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode layer provided on the second semiconductor layer side of the structure including a metal portion and a plurality of openings penetrating the metal portion; an intermediate layer provided between the second semiconductor layer and the first electrode layer; and a second electrode layer in electrical conduction with the first semiconductor layer. Each of the plurality of openings has a circle equivalent diameter ranging from 10 nanometers (nm) to 5 micrometers (μm). The intermediate layer has a thickness ranging from 10 nm to 200 nm.
摘要翻译：解决的问题：提供可以实现高亮度的半导体发光元件及其制造方法。解决方案：根据实施例的半导体发光元件包括：包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构第二半导体层; 设置在所述结构的第二半导体层侧的第一电极层，包括金属部分和穿过所述金属部分的多个开口; 设置在所述第二半导体层和所述第一电极层之间的中间层; 以及与第一半导体层导通的第二电极层。多个开口中的每一个具有从10纳米（nm）至5微米（μm）的圆当量直径。中间层的厚度为10nm〜200nm。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2001093863A WAFER BACK SIDE SPUTTERING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2001093863A
公开(公告)日：2001-04-06
申请号：JP27078599
申请日：1999-09-24
申请人： TOSHIBA CORP
发明人： NUNOTANI NOBUHITO
IPC分类号： H01L21/301 , H01L21/203 , H01L21/285 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a back side sputtering method and a semiconductor device manufacturing apparatus for implementing the sputtering method, where the stress of a metallic film formed on the back side of a wafer for forming semiconductor elements is small and hence the wafer warps less even its thickness becomes reduced. SOLUTION: A conductive film 7 is formed on the back side of a wafer 1 by sputtering, such that a lattice-shaped region, an island-shaped region 8 and a pit-shaped region are formed separately by at least one chip-forming region basis. The film 7 is formed by using a mask, having desired pattern holes formed in advance so that metal is deposited only on portions corresponding to the holes by sputtering. Using the film 7 thus prepared, the stress caused over the entire surface of the wafer can be reduced, with the result that the warpage of the wafer is reduced.

6. 发明专利

JPH09148399A WAFER CLEANING AND DIFFUSION SYSTEM 失效
公开(公告)号：JPH09148399A
公开(公告)日：1997-06-06
申请号：JP30930295
申请日：1995-11-28
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： UCHIDA HIROSHI , NUNOTANI NOBUHITO , MIYASHITA NAOTO , KATAKABE ICHIRO , KAWAMOTO HIROSHI
IPC分类号： H01L21/677 , H01L21/02 , H01L21/22 , H01L21/304 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To enable connection of a cleaning system and a diffusion system by a carrier device so as to carry a cleaned wafer from the cleaning system to the diffusion system without housing the wafer within a cassette. SOLUTION: A cleaning system 100 is constituted by a plurality of single wafer cleaning units 6, and a diffusion system 200 is constituted by a plurality of diffusion furnaces 14. These cleaning system 100 and diffusion system 200 are located to be close to each other and are connected by a carrier device 300. The atmospheric pressure within the diffusion system 200 set to be lower than that of a clean room, and the atmospheric pressure within the cleaning system 100 is set to be lower than that of the diffusion system 200. Such relation of atmospheric pressure prevents minor drops or vapor of chemical solution within the cleaning system 100 from leaking out. Therefore, the diffusion system 200 is prevented from being corroded by minor drops or vapor of the chemical solution within the cleaning system 100 even though the diffusion system 200 is located near the cleaning system 100.

7. 发明专利

JPH08339949A RESIST APPLICATION METHOD AND ITS DEVICE 失效
公开(公告)号：JPH08339949A
公开(公告)日：1996-12-24
申请号：JP14323295
申请日：1995-06-09
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： UCHIDA HIROSHI , KANEKO TATSUHIKO , KODAMA TAKAYUKI , NUNOTANI NOBUHITO
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PURPOSE: To provide a resist application method and an application device which can form a uniform thin film on a semiconductor wafer even if a usage of chemical is reduced. CONSTITUTION: In a resist application device which sucks a semiconductor wafer 1 by a suction means 3, holds it on a holding stand 8, and applies chemical 6 applied to a surface part of the semiconductor wafer 1 all over the semiconductor wafer 1 while rotating the semiconductor wafer 1 together with the holding stand 8, the suction means 3 is installed counter to the center part of the semiconductor wafer 1 and the holding stand 8 has a ring-like projection 9 which projects from a surface of a circumferential edge part.

8. 发明专利

JPH0653141A THERMAL TREATMENT FILM FORMATION DEVICE 失效
公开(公告)号：JPH0653141A
公开(公告)日：1994-02-25
申请号：JP20384292
申请日：1992-07-30
申请人： TOSHIBA CORP
发明人： NUNOTANI NOBUHITO , TAKAHASHI KOICHI , MIYASHITA NAOTO
IPC分类号： H01L21/205 , C23C16/46 , C30B25/08 , H01L21/00 , H01L21/31
摘要： PURPOSE:To prevent growth of a natural oxide film on a semiconductor substrate without lowering producibility by discharging high temperature air inside a space formed between a film formation treatment chamber and a heater and between the heater and a thermal insulation material before loading and unloading the semiconductor substrate and thereby cooling an interior of the film formation treatment chamber rapidly. CONSTITUTION:After a semiconductor substrate 1 inside a film formation treatment chamber 5 is provided with a film at a film formation temperature, first and second fans 17, 29 are operated, heated air in a space 13 between an outer wall 6 of the film formation treatment chamber 5 and a heater 9 and in a second space 15 between the heater 9 and a thermal insulation material 11 is sucked out, outside low temperature air is made to flow into an inside of the first and second spaces 13, 15 and temperature of the heater 9 and the film formation treatment chamber 5 is reduced by air cooling at a cooling velocity of at least about 10 deg.C per minute. Thereby, formation of a natural oxide film can be restrained without lowering producibility by reducing a time to cool the film formation chamber to a temperature whereat a natural oxide film is not formed before a semiconductor substrate is loaded and unloaded.

9. 发明专利

JPH05291126A 失效
公开(公告)号：JPH05291126A
公开(公告)日：1993-11-05
申请号：JP8373592
申请日：1992-04-06
申请人： TOSHIBA CORP
发明人： SATO MITSUO , NUNOTANI NOBUHITO
IPC分类号： B05C11/08 , G03F7/16 , H01L21/027
摘要： PURPOSE:To form a uniform photo resist coating film by using low exhaust pressure. CONSTITUTION:A hollow cylinder 103 whose diameter is smaller than a semiconductor substrate 102 is arranged just above the semiconductor substrate 102 and serves as a suction inlet. A skirt 105 is arranged below the semiconductor substrate 102, which skirt expands its diameter toward exhaust vents 107a, 107b, and has the diameter larger than the semiconductor substrate 102.

10. 发明专利

JPH04355944A WAFER ROTATING DEVICE 失效
公开(公告)号：JPH04355944A
公开(公告)日：1992-12-09
申请号：JP1020591
申请日：1991-01-30
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： NUNOTANI NOBUHITO , MINOHOSHI TOMIO
IPC分类号： H01L21/66 , H01L21/68
摘要： PURPOSE:To detect the speed of rotation of a placing stage support pillar in a closed vessel in a state that the sealing performance of the closed vessel is held. CONSTITUTION:A placing stage 3 placed with a wafer 2 and a placing stage support pillar 4 bonded firmly to this placing stage 3 are respectively housed in a closed vessel 1. A magnetic fluid seal 6 couples a motor 7 with the pillar 4 in a noncontact state in a state that the sealing performance of the vessel 1 is held. A through hole 8 is perforated in the pillar 4 and a luminous flux from a light-emitting device 14 passes through the hole 8 via a window 14, transmits a window 12 and is made incicident to a photodetector 15. A detection output of the photodetector 15 shows the speed of rotation of the pillar 4. A control device 16 controls the speed of rotation of the motor 7 on the basis of the detection output so that the speed of rotation of the pillar 4 reaches a desired value.

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