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1. 发明专利

JPH09148399A WAFER CLEANING AND DIFFUSION SYSTEM 失效
公开(公告)号：JPH09148399A
公开(公告)日：1997-06-06
申请号：JP30930295
申请日：1995-11-28
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： UCHIDA HIROSHI , NUNOTANI NOBUHITO , MIYASHITA NAOTO , KATAKABE ICHIRO , KAWAMOTO HIROSHI
IPC分类号： H01L21/677 , H01L21/02 , H01L21/22 , H01L21/304 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To enable connection of a cleaning system and a diffusion system by a carrier device so as to carry a cleaned wafer from the cleaning system to the diffusion system without housing the wafer within a cassette. SOLUTION: A cleaning system 100 is constituted by a plurality of single wafer cleaning units 6, and a diffusion system 200 is constituted by a plurality of diffusion furnaces 14. These cleaning system 100 and diffusion system 200 are located to be close to each other and are connected by a carrier device 300. The atmospheric pressure within the diffusion system 200 set to be lower than that of a clean room, and the atmospheric pressure within the cleaning system 100 is set to be lower than that of the diffusion system 200. Such relation of atmospheric pressure prevents minor drops or vapor of chemical solution within the cleaning system 100 from leaking out. Therefore, the diffusion system 200 is prevented from being corroded by minor drops or vapor of the chemical solution within the cleaning system 100 even though the diffusion system 200 is located near the cleaning system 100.

2. 发明专利

JP2001284306A APPARATUS AND METHOD FOR CLEANING SUBSTRATE 失效
公开(公告)号：JP2001284306A
公开(公告)日：2001-10-12
申请号：JP2000089769
申请日：2000-03-28
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： OGAWA YOSHIHIRO , KAWAMOTO HIROSHI , ISHIZAKI ITSURO , MIYAZAKI KUNIHIRO
IPC分类号： B08B3/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for cleaning a substrate that prevents damage to the substrate, and at the same time can carry out ultrasonic washing with a high particle elimination rate. SOLUTION: A substrate-cleaning apparatus 1 is equipped with a demineralized water containing gas concentration control part 11, a chemical liquid-mixing part 13, a substrate-cleaning both 27, an ultrasonic vibrator 21, an ultrasonic wave control part 15, a temperature sensor 31, and a temperature monitor 33. In this case, the temperature of cleaning fluid in the substrate- cleaning tank 27 is measured by the temperature sensor 31. Based on the measurement result, the temperature monitor 33 calculates changes in the temperature of the cleaning fluid in the cleaning both 27. According to the calculation result and the correlation between the change in the temperature of the cleaning fluid and the damage of a substrate S, a supply voltage to the ultrasonic vibrator 21 is reduced or is set to zero, or the concentration of the demineralized water containing gas is increased.

3. 发明专利

JPH11221567A IONIZED WATER MANUFACTURING DEVICE 失效
公开(公告)号：JPH11221567A
公开(公告)日：1999-08-17
申请号：JP2745898
申请日：1998-02-09
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： UCHIDA HIROSHI , SHIYAURA HAJIME , NUNOTANI NOBUHITO , KATAKABE ICHIRO , KAWAMOTO HIROSHI
IPC分类号： C02F1/46
摘要： PROBLEM TO BE SOLVED: To restrain chipping off of a carbon electrode and a quantity of carbon particles in ionized water without enlarging the device and to facilitate maintenance of the device. SOLUTION: Many spherical carbons 6 are filled in an anode tank 1A and an anode is constituted of an anode electrode 3 and the spherical carbons 6. Electric current density at an anode side is decreased by enlarging a surface area of the anode. Thus, an oxidation work of carbon is restrained and the anode electrode 3 constituted of the carbon and the spherical carbons 6 are hardly cut off, and the life of the electrode can be enhanced, and replacement of the anode electrode 3 for maintenance becomes less. Also, the spherical carbons 6 are packed in the anode tank 1A and the anode electrode 3 originally present on, then the device need not be enlarged.

4. 发明专利

JP2005044969A Insulating structural body, semiconductor device and method for manufacturing the same 有权
标题翻译：绝缘结构体，半导体器件及其制造方法
公开(公告)号：JP2005044969A
公开(公告)日：2005-02-17
申请号：JP2003202486
申请日：2003-07-28
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUMURA TAKESHI , NAKAJIMA TAKAHITO , KAWAMOTO HIROSHI , MIYASATO MIKIE , UOZUMI NOBUHIRO
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that has a small dielectric constant and high film strength, and can control wiring capacity. SOLUTION: The semiconductor device is provided with a bottom insulation film 2, a first side wall insulating film 3a, and a second side wall insulating film 3b. All are arranged on the bottom insulating film 2 opposite to each other, while pinching a macro cavity 5 inside, and an upper insulating film 4 lays between the upper part of the first side wall insulating film 3a and the upper part of the second side wall insulating film 3b. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有小介电常数和高膜强度的半导体器件，并且可以控制布线能力。解决方案：半导体器件设置有底部绝缘膜2，第一侧壁绝缘膜3a和第二侧壁绝缘膜3b。全部均布置在彼此相对的底部绝缘膜2上，同时将宏观腔5夹在内部，并且上部绝缘膜4位于第一侧壁绝缘膜3a的上部和第二侧壁的上部之间绝缘膜3b。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JPH11145094A EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11145094A
公开(公告)日：1999-05-28
申请号：JP31234897
申请日：1997-11-13
申请人： TOSHIBA CORP
发明人： KAWAMOTO HIROSHI , KATAKABE ICHIRO , MIYASHITA NAOTO , TAKAYASU ATSUSHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent surface roughness of a wafer which is to be caused by alkaline water, in a cleaning equipment for cleaning an Si wafer. SOLUTION: For example in a cleaning vessel 11, cleaning fluid 22 in which trace amount of hydrogen peroxide water 22 is added to alkaline water 21 formed by electrolysis is injected. An Si wafer 31 is dipped in a cleaning solution 23 filling the cleaning vessel 11, and particles, metal impurities, etc., attaching on the surface are eliminated. In this case, an oxide film is formed on the surface of the Si wafer 31, and the surface is protected from the etching which is to be caused by the alkaline water 21. By increasing ORP almost without changing the pH value of the cleaning fluid 23, surface roughness of the Si wafer 31 is prevented while cleaning effect is maintained.

6. 发明专利

JP2008235333A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2008235333A
公开(公告)日：2008-10-02
申请号：JP2007068598
申请日：2007-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA KOREI , KAWAMOTO HIROSHI , IIMORI HIROYASU , ONODA HAJIME
IPC分类号： H01L21/306 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of ensuring stable etching rate for preventing precipitation of silica in gas piping, calculating a specific gravity value of a processing liquid within a processing tank and measuring the specific gravity value accurately.
SOLUTION: The semiconductor manufacturing apparatus for performing surface treatment by immersing a substrate into the heated processing liquid is provided with a processing tank 1 for reserving the processing liquid, a pressure detector 53 for releasing gas at a predetermined width in the processing liquid and detecting a liquid pressure of the processing liquid from the releasing pressure, a specific gravity calculator 54 for calculating the specific gravity of the processing liquid on the basis of the detected liquid pressure, a heater 55 for heating the gas released in the processing liquid, and a controller 51 for controlling an amount of pure water supplied to the processing tank on the basis of the calculated specific gravity.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方案：提供一种能够确保稳定的蚀刻速度的半导体制造装置，以防止气体配管中的二氧化硅析出，计算处理槽内的处理液的比重值，并精确地测定比重值。解决方案：通过将衬底浸入加热处理液中进行表面处理的半导体制造装置设置有用于储存处理液的处理槽1，用于在处理液中以预定宽度释放气体的压力检测器53 从解除压力检测处理液的液体压力，用于根据检测到的液体压力计算处理液的比重的比重计算器54，用于加热处理液中释放的气体的加热器55，以及控制器51，用于根据计算的比重来控制供给到处理罐的纯水量。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007184639A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007184639A
公开(公告)日：2007-07-19
申请号：JP2007079440
申请日：2007-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO MASAMI , SATO MOTOYUKI , OGUCHI HISASHI , OGAWA YOSHIHIRO , TOMITA HIROSHI , KAWAMOTO HIROSHI
IPC分类号： H01L21/306 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which performs non-selective etching or selective etching for a plurality of insulating films on a semiconductor substrate by using etchant which uses neither organic acid nor organic solvent.
SOLUTION: Etchant is aqueous solution of HF which dissociates to F
- and HF
2
- in aqueous solution. The selectivity (etching rate) of an SiN film to a thermal oxide SiO
2 film is set to about 1 by controlling concentration and temperature of the HF aqueous solution, and the aqueous solution is used both in non-selective etching process and selective etching process of the SiN film to the thermal oxide SiO
2 film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造半导体器件的方法，该半导体器件通过使用既不使用有机酸也不使用有机溶剂的蚀刻剂，对半导体衬底上的多个绝缘膜进行非选择性蚀刻或选择性蚀刻。解决方案：蚀刻剂是HF水溶液，其在水溶液中分解成F - 和HF 2 。通过控制HF水溶液的浓度和温度，将SiN膜与热氧化物SiO 2膜的选择性（蚀刻速率）设定为约1，选择性蚀刻工艺和SiN膜对热氧化物SiO 2膜的选择性蚀刻处理。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2004179583A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2004179583A
公开(公告)日：2004-06-24
申请号：JP2002346928
申请日：2002-11-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO MASAMI , SATO MOTOYUKI , OGUCHI HISASHI , OGAWA YOSHIHIRO , TOMITA HIROSHI , KAWAMOTO HIROSHI
IPC分类号： H01L21/768 , H01L21/308 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which performs non-selective etching or selective etching for a plurality of insulating films on a semiconductor substrate by using etchant of the same composition which uses neither organic acid nor organic solvent.
SOLUTION: Etchant is water solution of HF which dissociates to F
- and HF
2
- in water solution. Setting of whether selectivity (etching rate) of an SiN film to a thermal oxide SiO
2 film is about 1 or a large value of about 30 or more is changed by controlling concentration and temperature of the HF water solution, and the water solution is used both in non-selective etching process and selective etching process of the SiN film to the thermal oxide SiO
2 film.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过使用不使用有机酸或有机物的相同组成的蚀刻剂对半导体衬底上的多个绝缘膜进行非选择性蚀刻或选择性蚀刻的半导体器件的制造方法溶剂。解决方案：蚀刻剂是在水溶液中解离为F - 和HF 2 - 的HF水溶液。通过控制HF水溶液的浓度和温度来改变SiN膜对热氧化物SiO 2膜的选择性（蚀刻速率）为约1或大约30或更大的大的值，并且在非选择性蚀刻工艺和SiN膜与热氧化物SiO 2膜的选择性蚀刻工艺中都使用水溶液。版权所有（C）2004，JPO

9. 发明专利

JP2003115479A SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND WET PROCESSOR 审中-公开
公开(公告)号：JP2003115479A
公开(公告)日：2003-04-18
申请号：JP2001307606
申请日：2001-10-03
申请人： TOSHIBA CORP
发明人： KAWAMOTO HIROSHI , NADAHARA SOICHI
IPC分类号： H01L21/308 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To realize a selective etching of a heat oxide film/(PSG film, TEOS oxide film) which improves the etching shape. SOLUTION: HF gas in a cylinder 4 is involved in pure water from a pure water feeder 5, and the pure water containing HF (HF water solution) is mixed with glacial acetic acid in a tank 3 to obtain a liquid which is used for an etching solution.

10. 发明专利

JP2011071199A Apparatus and method for cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体基板的装置和方法
公开(公告)号：JP2011071199A
公开(公告)日：2011-04-07
申请号：JP2009219111
申请日：2009-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , KAWAMOTO HIROSHI , ONODA HAJIME
IPC分类号： H01L21/304
CPC分类号： H01L21/67028 , B08B3/022 , C11D11/0047 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To dramatically prevent an effect on fine patterns when drying a semiconductor substrate after being rinsed.
SOLUTION: A method of cleaning a semiconductor substrate includes: a cleaning step of cleaning a semiconductor substrate with a cleaning liquid; a rinsing step of rinsing the semiconductor substrate with rinse water after the cleaning step; and a drying step of drying the semiconductor substrate after the semiconductor substrate is rinsed. A temperature of the rinse water is set to ≥70°C in the rinsing step, and the rinse water is set to be acidic.
COPYRIGHT: (C)2011,JPO&INPIT

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