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1. 发明专利

JP2005020020A PROCESS FOR FABRICATING SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING Ti MATERIAL FOR MAGNETRON SPUTTERING SYSTEM 有权
标题翻译：制造半导体元件的方法，以及制造用于磁控溅射系统的钛材料的方法
公开(公告)号：JP2005020020A
公开(公告)日：2005-01-20
申请号：JP2004246804
申请日：2004-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： C23C14/14 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To suppress the leak current of a semiconductor element by employing a film composed of a high melting point metal, an alloy of a high melting point metal, a silicide of a high melting point metal, and a nitride of Ti, Ta, W, and a Ti-W alloy in a contact barrier layer or a gate electrode in order to attain a highly reliable semiconductor element. SOLUTION: In the process for fabricating a semiconductor element, a Ti material for a magnetron sputtering system having an Al concentration not higher than 3 ppm is prepared by removing Al from a Ti material, and a contact barrier layer or a gate electrode layer having an Al content not higher than 1×10 18 atoms/cm 3 is formed using the Ti material by sputtering, wherein the junction depth of a source-drain region is 0.3 μm or less. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过使用由高熔点金属，高熔点金属的合金，高熔点金属的硅化物和氮化物构成的膜来抑制半导体元件的漏电流的Ti，Ta，W和Ti-W合金，以获得高可靠性的半导体元件。解决方案：在制造半导体元件的过程中，通过从Ti材料中除去Al，并且接触阻挡层或栅极电极制备具有不高于3ppm的Al浓度的磁控溅射系统的Ti材料使用Ti材料通过溅射形成Al含量不高于1×10 18原子/ cm 3 SP / 3的层，其中源极 - 漏极区的结深为 0.3μm以下。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2002367999A Electronic component and manufacturing method therefor 有权
标题翻译：电子元件及其制造方法
公开(公告)号：JP2002367999A
公开(公告)日：2002-12-20
申请号：JP2002119887
申请日：2002-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HASUNUMA MASAHIKO , TOYODA HIROSHI , KANEKO HISAFUMI , TOMITA HIROSHI , KAWANOUE TAKASHI , KAJITA AKIHIRO , KAWAKUBO TAKASHI , MIYAUCHI MASAMI , ITO SACHIYO
IPC分类号： H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide an electronic component having a highly reliable metallic wiring and to provide its manufacturing method. SOLUTION: On a substrate 1, the metallic wiring 2 made of a high orientational crystal is formed on an insulating layer 5 and an amorphous thin film 3. In the high orientational crystal, a half or more of the grain boundary is defined by any of a grain boundary having a relative angle of 10 deg. or smaller of inclination, rotation or their combination with a center of orientational axis among adjoining crystal grains, a corresponding grain boundary having a Σvalue of 10 or smaller, and a grain boundary with a deviation of 3 deg. or smaller.
摘要翻译：要解决的问题：提供一种具有高可靠性金属布线的电子部件，并提供其制造方法。解决方案：在基板1上，在绝缘层5和非晶薄膜3上形成由高取向晶体制成的金属布线2.在高取向晶体中，一半以上的晶界由相对角度为10度的晶界或更小的倾斜，旋转或它们与相邻晶粒中的取向轴中心的组合，具有10或更小的Σ值的相应晶界和具有偏差3度的晶界。或更小。

3. 发明专利

JPH04133498A HEAT EXHAUSTING SYSTEM OF DATA PROCESSING DEVICE 失效
公开(公告)号：JPH04133498A
公开(公告)日：1992-05-07
申请号：JP25615090
申请日：1990-09-26
申请人： TOSHIBA CORP
发明人： MIYAUCHI MASAMI
IPC分类号： F25D3/10 , G06F1/20 , H05K7/20
摘要： PURPOSE:To cool data processing devices so as to obtain prescribed characteristics by a method wherein a cooling medium circulating system which feeds cooling medium to data processing devices and returns cooling medium which absorbs heat from the cooling structures of the data processing devices to a cooling device. CONSTITUTION:Data processing devices 1 provided with heat releasing bodies 2 are arranged, and the heat releasing body 2 is installed in an individual cooling system 3 which displays its prescribed cooling performance by cooling fluid medium. The individual cooling system 3 cools the heat releasing body 2 through the intermediary of a cooling heat exchanger 6 with circulating cooling medium. A cooling medium feed pipe 4 and a cooling medium discharge pipe 5 are connected to the individual cooling system 3 in a detachable manner, and the feed pipe 4 and the discharge pipe 5 are connected to cooling medium circulating pipings 7 and 8 connected to the inlet and the outlet of the cooling medium cooling heat exchanger 6.

4. 发明专利

JPH01177325A MANUFACTURE OF HIGH-PURITY ZIRCONIUM 失效
公开(公告)号：JPH01177325A
公开(公告)日：1989-07-13
申请号：JP73188
申请日：1988-01-07
申请人： TOSHIBA CORP
发明人： OBATA MINORU , KOBANAWA YOSHIKO , MIYAUCHI MASAMI , HIGASHINAKAGAHA EMIKO
IPC分类号： C22B34/14
摘要： PURPOSE:To manufacture high-purity Zr by a simplified process by refining zirconium halide from the scrap of zircaloy by a halide decomposition process, decomposing the above, and the depositing the resulting high-purity Zr on the surface of a Zr material. CONSTITUTION:The scrap 23 of zircaloy containing Sn, etc., iodine 24, etc., as halogen are charged into a refining tank 11. Both are heated and allowed to react to form SnI4, etc., and ZnI4, and then, SnI4 is trapped and recovered in a recovering tank 13 having temp. difference. On the other hand, refined ZnI4 is fed to a zirconium iodide supply tank 16. The inside of a decomposition tank 17 is evacuated, and this decomposition tank 17 is heated by means of an electric furnace 18 up to a temp. at which the vapor pressure of ZrI4 can be held at the prescribed value, and further, a filament 19 consisting of high- purity Zr is electrified to undergo heating by means of an electric power source 20. Then, ZrI4 in a vapor-phase state in the supply tank 16 is slowly supplied into the decomposition tank 17 and ZrI4 is dissociated above the filament 19, by which high-purity Zr can be grown on the filament 19.

5. 发明专利

JPS61163230A BONDING WIRE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61163230A
公开(公告)日：1986-07-23
申请号：JP80285
申请日：1985-01-09
申请人： TOSHIBA CORP
发明人： SATO MICHIO , MIYAUCHI MASAMI
IPC分类号： C22C21/00 , H01L21/60 , H01L23/495
摘要： PURPOSE:To obtain a bonding wire for a semiconductor device having high tensile strength at high temp. and superior thermal fatigue resistance by adding a specified amount of Be to Al. CONSTITUTION:A bonding wire for a semiconductor device is manufactured by adding 0.1-1.5wt% Be to Al. The grains of a precipitated phase is required to be regulated to

6. 发明专利

JPS60189269A Diaphragm 失效
标题翻译： DIAPHRAGM
公开(公告)号：JPS60189269A
公开(公告)日：1985-09-26
申请号：JP4292984
申请日：1984-03-08
申请人： Toshiba Corp
发明人： FUJIWARA TETSUO , SATOU MICHIO , MIYAUCHI MASAMI
IPC分类号： C22C19/03 , C22C38/00 , C23C30/00 , H01L29/84
CPC分类号： H01L29/84
摘要： PURPOSE:To obtain a diaphragm, which has a characteristic of constant elasticity up to 130 deg.C and can measure with high precision differential pressure and pressure up to 100 deg.C, and moreover, has an excellent characteristic in corrosion resistance, by a method wherein a corrosion- resistant metal coated layer is provided on the surface of an alloy consisting of a precipitation hardened constant elasticity alloy composed of Ni, Co, Cr, Ti, Al and Zr, which are respectively a specified % in weight, the remnant Fe and incidental impurities. CONSTITUTION:The diaphragm is one that a corrosion-resistant metal coated layer of a thickness of 0.1-5% in a ratio (the thickness of a coated layer/the thickness of its base metal) of thickness was provided on the surface of an alloy, which has a constant elasticity and consists of 30.0-44.5wt% Ni, 0.4-15wt% Co, 4.0-6.5wt% Cr, 0.5-1.9wt% Ti, 0.1-1.0wt% Al, 0.2- 2.0wt% Zr, the remnant Fe and incidental impurities. The Ni maintains the characteristc of the constant elasticity of the alloy. When the wt% of the Ni is less than 30.0wt% and exceeds 44.5wt%, the characteristic of the effect of the constant elasticity is not obtained. The Co also maintains the characteristic of the constant elasticity of the alloy in the same manner as the Ni. Specially, as the Co makes the magnetic critical temperature of the alloy to rise, the Co contributes to it for the temperature range of the characteristic of the constant elasticity to improve. When the wt% of the Co is less than 0.4wt% and exceeds 15.0wt%, the effect of the constant elasticity cannot be sufficiently obtained.
摘要翻译：目的：获得具有恒定弹性至130摄氏度特性的隔膜，可在高达100度的高精度差压和高压下进行测量，而且具有优异的耐腐蚀性能方法，其中在由Ni，Co，Cr，Ti，Al和Zr组成的沉淀硬化的恒定弹性合金组成的合金的表面上提供耐腐蚀金属涂层，所述合金的重量分别为指定的重量％铁和杂质。构成：隔膜是在合金表面上设置厚度为0.1〜5％（涂层厚度/贱金属的厚度）的厚度为0.1〜5％的耐腐蚀金属涂层的隔膜其具有恒定的弹性，由30.0-44.5重量％的Ni，0.4-15重量％的Co，4.0-6.5重量％的Cr，0.5-1.9重量％的Ti，0.1-1.0重量％的Al，0.2-2.0重量％的Zr组成，剩余的铁和杂质。 Ni保持合金的恒定弹性的特点。当Ni的wt％小于30.0wt％且超过44.5wt％时，不能获得恒定弹性效果的特性。 Co还以与Ni相同的方式保持合金的恒定弹性的特性。特别地，随着Co使合金的磁临界温度升高，Co在恒定弹性特性的温度范围内有助于提高。当Co的wt％小于0.4wt％且超过15.0wt％时，不能充分获得恒定弹性的效果。

7. 发明专利

JPS59152655A Lead frame 失效
标题翻译：领导框架
公开(公告)号：JPS59152655A
公开(公告)日：1984-08-31
申请号：JP2624583
申请日：1983-02-21
申请人： Toshiba Corp
发明人： FUJIWARA TETSUO , MIYAUCHI MASAMI
IPC分类号： H01L23/50 , C22C9/00 , H01L21/60 , H01L23/495
CPC分类号： H01L23/49568 , H01L23/49586 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To provide a base material having smaller thermal expansion coefficient, and electrical conductivity and thermal conductivity equal to copper Cu and copper Cu alloy by using an alloy containing an element for accelerating the selective oxidation to copper or copper alloy the base material and forming a low thermal expansion layer by internal oxidation on the surface of the material. CONSTITUTION:Cu or Cu alloy material and a material for accelerating the internal oxidation such as aluminum are weighed by 2-10wt%, and fused in vacuum to obtain an ingot. After the ingot is homogeneously annealed in high purity argon gas atmosphere, then formed in the prescribed thickness, and a plate material 1 for many-continued lead frame is formed. This material is buried in a mixture powder 2 of 50wt% of electrolytic copper powder and 50wt% of oxidized copper powder, and heat treated to internally oxidized the aluminum. Thus, only the surface part for mounting the silicon semiconductor element is formed in a low thermal expansion layer 3 in which Al2O3 is dispersed in a matrix made of copper or copper alloy. The base material thus obtained is formed of Cu or Cu alloy having excellent thermal conductivity and electrical conductivity.
摘要翻译：目的：提供一种具有较小热膨胀系数的基体材料，以及铜铜和铜铜合金的导电性和导热系数，使用含有促进铜或铜合金选择性氧化的元素的合金作为基材并形成低热膨胀层通过材料表面的内部氧化。构成：将Cu或Cu合金材料和用于加速内部氧化的材料（例如铝）称重2-10重量％，并在真空中熔化以获得锭。在高纯度氩气气氛中均匀退火后，形成规定厚度，形成许多连续引线框的板材1。将该材料埋入50重量％的电解铜粉末和50重量％的氧化铜粉末的混合粉末2中，并进行热处理以内部氧化铝。因此，仅将用于安装硅半导体元件的表面部分形成在Al 2 O 3分散在由铜或铜合金制成的基体中的低热膨胀层3中。由此获得的基材由具有优异导热性和导电性的Cu或Cu合金形成。

8. 发明专利

JPS5956564A Dispersion-strengthened constant elasticity alloy 失效
标题翻译：分散强化恒定弹性合金
公开(公告)号：JPS5956564A
公开(公告)日：1984-04-02
申请号：JP16715382
申请日：1982-09-25
申请人： Toshiba Corp
发明人： MIYAUCHI MASAMI , ITOU MASAYUKI
IPC分类号： C22C38/00 , C22C38/50
摘要： PURPOSE: To provide a dispersion-strengthened constant elasticity alloy which contains respective prescribed ratios of Ni, Cr, Ti and dispersoid, the balance Fe and incidental impurities, being extremely less in the dependency of the modulus of elasticity on temp. and is highly strong.
CONSTITUTION: The above-discribed dispersion-strengthened constant elasticity alloy consists, by wt%, of 40.5W43.0% Ni, 4.9W5.75% Cr, 1.5W2.5% Ti, 0.3W 1.5% dispersoid (e.g.; Y
2 O
3 , Al
2 O
3 , Ti
2 O
3 , etc.) and the balance Fe with incidental impurities. The alloy is produced by the following method: The respective alloy components are mixed at prescribed ratios, and an ingot is produced by a powder metallurgical method. The ingot is hot-processed to decrease the plate thickness and is further cold-processed to a prescribed plate thickness, then the plate is subjected to an aging treatment and the alloy is produced. The alloy is improved in the temp. range exhibiting permanent elasticity up to about 130W 140°C as compared to just about 80°C of conventional precipitation-strengthened constant elasticity alloy, and has the tensile strength equivalent to the tensile strength of conventional alloys or higher.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了提供含有各自规定比例的Ni，Cr，Ti和分散质的分散强化恒定弹性合金，余量为Fe和附带杂质，在弹性模量对温度的依赖性方面极少。而且很强。构成：上述分散强化恒弹性合金以重量％计含有40.5-43.0％的Ni，4.9-5.75％的Cr，1.5-2.5％的Ti，0.3-1.5％的分散质（例如：Y2O3，Al2O3，Ti2O3 等）和余量Fe与附带的杂质。通过以下方法制造合金：以规定的比例混合各合金成分，通过粉末冶金法制造锭。将该锭热处理以减小板厚，并进一步冷加工成规定的板厚，然后对该板进行时效处理，并生产合金。合金的温度提高。与刚刚约80℃的常规沉淀强化恒弹性合金相比，具有高达约130-140℃的永久弹性，并且具有与常规合金的抗拉强度相当的拉伸强度或更高的拉伸强度。

9. 发明专利

JPS5917220A Dry transformer 失效
标题翻译：干式变压器
公开(公告)号：JPS5917220A
公开(公告)日：1984-01-28
申请号：JP12592082
申请日：1982-07-21
申请人： Toshiba Corp
发明人： MIYAUCHI MASAMI , ITOU MASAYUKI , HORIE HIROMICHI
IPC分类号： H01F27/06 , H01F27/33
CPC分类号： H01F27/33
摘要： PURPOSE:To reduce vibratory noises by forming a supporter by a titanium alloy having a martensite texture containing a specific quantity of molybdenum. CONSTITUTION:In the dry transformer, the supporter is formed by the titanium alloy, which contains 1-11wt% molybdenum, consists of residual titanium and accompanying impurities and has the martensite texture. Molybdenum is an element which is most effective for improving vibration damping capacity, practically required vibration damping capacity is not obtained when its content is less than 1%, and vibration damping capacity becomes unstable when it exceeds 11%.
摘要翻译：目的：通过用含有特定量的钼的马氏体组织的钛合金形成载体来减少振动噪声。构成：在干式变压器中，支架由钛合金形成，钛合金含有1-11重量％的钼，由残留的钛和伴随的杂质组成，具有马氏体组织。钼是提高减震能力最有效的元素，当其含量小于1％时，实际上所需的振动阻尼能力不足，当超过11％时，减震能力变得不稳定。

10. 发明专利

JP2006049925A MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF Ti MATERIAL FOR MAGNETRON SPUTTERING SYSTEM 有权
标题翻译：半导体器件的制造方法及其制造方法，用于磁控溅射系统
公开(公告)号：JP2006049925A
公开(公告)日：2006-02-16
申请号：JP2005270372
申请日：2005-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C22B9/22 , C22B34/12 , C22C5/04 , C22C14/00 , C22C19/03 , C22C19/07 , C22C27/02 , C22C27/04 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To suppress a leak current of a semiconductor device by employing a film consisting of a refractory metal, an alloy consisting of the refractory metal, silicide of the refractory metal, and nitride of Ti, Ta, W, and a Ti-W alloy, in such as a contact barrier layer or a gate electrode in order to obtain the highly reliable semiconductor device.
SOLUTION: In the manufacturing method of the semiconductor device, a Ti material for a magnetron sputtering system having an Al concentration not higher than 3 ppm is prepared by removing Al from the Ti material, and a contact barrier or a gate electrode layer having an Al content not higher than 1×10
18 atoms/cm
3 and being crystalline or amorphous is formed using the Ti material by a sputtering method, wherein a junction depth of a source-drain region is 0.3 μm or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过使用由难熔金属组成的膜，由难熔金属，难熔金属的硅化物和Ti，Ta，W的氮化物组成的合金来抑制半导体器件的漏电流，和Ti-W合金，例如接触阻挡层或栅电极，以获得高度可靠的半导体器件。解决方案：在半导体器件的制造方法中，通过从Ti材料中除去Al而制备Al浓度不高于3ppm的用于磁控溅射系统的Ti材料，并且接触势垒或栅电极层使用Ti材料通过溅射法形成Al含量不高于1×10 18 原子/ cm 3的结晶或非晶体，其中结晶深度源极 - 漏极区域为0.3μm以下。版权所有（C）2006，JPO＆NCIPI

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