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1. 发明专利

JP2010236892A Ultrasonic stress measuring apparatus and ultrasonic stress measuring method 审中-公开
标题翻译：超声应变测量装置和超声应力测量方法
公开(公告)号：JP2010236892A
公开(公告)日：2010-10-21
申请号：JP2009082426
申请日：2009-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： WATABE KAZUMI , SATO MICHIO , HAYASHI TAKAHIRO , SAITO TOSHIYUKI , YOSHIOKA HIROAKI
IPC分类号： G01L1/00 , G01N29/00
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic stress measuring apparatus and an ultrasonic stress measuring method which prevent the upsizing of an apparatus and improve working efficiency.
SOLUTION: By first and second horizontal transverse wave probes P1, P2, two pieces of ultrasonic sonic velocity data the vibration direction of which is horizontal are obtained. By determining the average value of the two pieces of sonic velocity data, the average sonic velocity data are regarded as data obtained by transmitting/receiving a horizontal transverse ultrasonic wave at the intermediate position between the two transverse wave probes P1, P2, that is, at the position of a longitudinal wave probe P0. A similar thought holds for first and second vertical transverse wave probes P3, P4. By arranging the probes as shown in Fig.1(b), therefore, the similar effect as a case in which the probes are exchanged is obtained without relying on a drive mechanism.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种超声波应力测量装置和超声波应力测量方法，其防止装置的大型化并提高工作效率。解决方案：通过第一和第二水平横波探头P1，P2获得振动方向为水平的两条超声波声速数据。通过确定两个声速数据的平均值，平均声速数据被认为是通过在两个横波探头P1，P2之间的中间位置处发送/接收水平横向超声波获得的数据，在纵波探头P0的位置。类似的想法适用于第一和第二垂直横波探头P3，P4。因此，通过如图1（b）所示布置探针，得到与探针交换的情况相同的效果，而不依赖于驱动机构。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2008139325A Ultrasonic flaw detector 有权
标题翻译：超声波检测仪
公开(公告)号：JP2008139325A
公开(公告)日：2008-06-19
申请号：JP2008007103
申请日：2008-01-16
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO MICHIO , ARAI RYOICHI , WATABE KAZUMI , YAMAMOTO SATOSHI
IPC分类号： G01N29/04 , G01N29/44
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic flaw detector capable of detecting a flaw or measuring plate thickness by transmitting and receiving transversal ultrasonic waves having a low frequency to/from the inside of an inspection object material by using a low-viscosity couplant. SOLUTION: In this ultrasonic flaw detector 20A, ultrasonic vibrators 42a and 42b contact a flaw detection surface 21a of the inspection object material 21, and time delay circuits 41 give time delay values to a signal processing system 45 and pulse generators 26 and 27. The pulse generators 26 and 27 sequentially apply pulses to the respective ultrasonic vibrators 42a and 42b to generate transversal ultrasonic waves as delay echoes along with longitudinal ultrasonic waves in the inspection object material 21; horizontal polarized transversal waves which propagate to the flaw detection surface 21a at a certain angle, and of which the vibration direction is horizontal to the flaw detection surface 21 are transmitted; the horizontal polarized transversal waves reflected in the inspection object material 21 are converted to electric signals to be given to the signal processing system 45; and the signal processing system 45 corrects reception times of the respective horizontal polarized transversal waves by referring to the time delay values, and thereafter executes flaw detection or plate thickness measurement of the inspection object material by adding and analyzing them. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种超声波探伤仪，其能够通过使用低粘度的方式将检测对象材料的内部的低频的横向超声波发送和接收来检测缺陷或测量板厚度耦合剂。解决方案：在超声波探伤仪20A中，超声波振动器42a，42b与被检查物21的探伤面21a接触，延时电路41向信号处理系统45和脉冲发生器26提供时间延迟值，脉冲发生器26和27顺序地向各个超声波振子42a和42b施加脉冲以产生横向超声波，作为检查对象材料21中的纵向超声波的延迟回波; 传播以一定角度传播到缺陷检测表面21a并且其振动方向与缺陷检测表面21水平的水平极化横波; 在检查对象材料21中反射的水平极化横波被转换为给予信号处理系统45的电信号; 并且信号处理系统45通过参考时间延迟值来校正各个水平极化横波的接收时间，然后通过对检查对象材料的分析和分析来执行检查对象材料的缺陷检测或板厚测量。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008062162A Cleaning method and device 审中-公开
标题翻译：清洁方法和装置
公开(公告)号：JP2008062162A
公开(公告)日：2008-03-21
申请号：JP2006241613
申请日：2006-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAJIMA YASUKI , WATANABE KATSUNOBU , SATO MICHIO
IPC分类号： B08B3/12 , B08B3/10 , B08B9/00 , F28G7/00 , G21F9/28
摘要： PROBLEM TO BE SOLVED: To clean a cleaning object in liquid held in an existing structure without disassembling.
SOLUTION: Ultrasonic waves 6 are applied to a nuclear reactor vessel 5 to vibrate the reactor vessel to generate cavitation 7 near the surface of the cleaning object for cleaning the inner face of the nuclear reactor vessel 5, being the cleaning object surface in contact with water 22 held in the structure such as the existing nuclear reactor vessel 5. When the cavitation 7 disappears, impact waves reach the inner face of the reactor vessel 5 to remove impurities such as cladding 8 adhering on the inner face of the reactor vessel 5.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：清洁现有结构中保持的液体中的清洁物体，无需拆卸。解决方案：将超声波6施加到核反应堆容器5以使反应器容器振动，以在清洁对象的表面附近产生气蚀7，以清洁核反应堆5的内表面，作为清洁对象表面与存在于现有的核反应堆5的结构中的水22接触。当空化7消失时，冲击波到达反应容器5的内表面，以除去粘附在反应器容器内表面上的诸如包层8的杂质 5.版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007232634A Stress measurement apparatus and its measurement method 有权
标题翻译：应力测量装置及其测量方法
公开(公告)号：JP2007232634A
公开(公告)日：2007-09-13
申请号：JP2006056456
申请日：2006-03-02
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO MICHIO , ARAI RYOICHI , WATABE KAZUMI , NARUSE KATSUHIKO
IPC分类号： G01L1/00
摘要： PROBLEM TO BE SOLVED: To highly precisely measure principal stress values themselves generated in a member by highly precisely measuring a sound speed when propagating on the surface of the member. SOLUTION: In steps S31 to S38, a stress measurement device executes sound speed measurement processing in an acoustic anisotropic direction and sound speed measurement processing in an acoustic anisotropic orthogonal direction. A control part transmits a relay wave on a relay wave probe after it is in a prescribed angle direction to the acoustic anisotropic direction, receives by two other relay wave probes, and calculates the sound speed in the acoustic anisotropic direction and sound speed measuring processing in the acoustic anisotropic orthogonal direction on the basis of data of the received relay wave. In addition, the stress measurement device calculates the principal stress values generated in an object to be measured on the basis of the data of the sound speed in a calculated acoustic anisotropic direction and the data of the sound speed in the acoustic anisotropic orthogonal direction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过在构件的表面上传播时高度精确地测量声速来高精度地测量在构件中产生的主应力值。解决方案：在步骤S31至S38中，应力测量装置执行声学各向异性方向的声速测量处理和声学各向异性垂直方向上的声速测量处理。控制部分在中继波探头在与声学各向异性方向规定的角度方向之后传输中继波，由另外两个中继波探头接收，并且计算声学各向异性方向的声速和声速测量处理基于接收到的中继波的数据的声学各向异性正交方向。另外，应力测量装置根据计算出的声学各向异性方向的声速数据和声各向异性垂直方向的声速数据，计算出被测定物体中产生的主应力值。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006284299A Position measuring device 审中-公开
标题翻译：位置测量装置
公开(公告)号：JP2006284299A
公开(公告)日：2006-10-19
申请号：JP2005102860
申请日：2005-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAWARA RYOICHI , SATO MICHIO , KOBAYASHI NORIYASU
IPC分类号： G01D5/245 , G01B7/30
摘要： PROBLEM TO BE SOLVED: To provide a maintenance-free position measuring device having a long lifetime in a high-temperature, high-pressure, and radiation-exposure environment.
SOLUTION: This device has a constitution equipped with a rotary magnetic core 4 mounted on a rotary shaft 5 moving a position measuring object by rotation, a fixed side magnetic core 3 forming a magnetic circuit together with the rotary magnetic core 4 on a prescribed rotational position of the rotary shaft 5 provided on a fixed part near the rotary shaft 5 through a partition wall 1, a detection coil 2 wound on the fixed side magnetic core 3, and a signal processing part 6 for counting the number of times of a change of a voltage induced in the detection coil 2.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供在高温，高压和辐射暴露环境中具有长寿命的免维护位置测量装置。解决方案：该装置具有安装在通过旋转移动位置测量对象的旋转轴5上的旋转磁芯4的结构，与旋转磁芯4一起形成磁路的固定侧磁芯3 通过分隔壁1设置在旋转轴5附近的固定部分上的旋转轴5的规定旋转位置，缠绕在固定侧磁芯3上的检测线圈2，以及用于计数次数的信号处理部6 检测线圈2中感应电压的变化。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006253721A Ta MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 有权
标题翻译：用于MAGNETRON SPUTTERING设备的材料
公开(公告)号：JP2006253721A
公开(公告)日：2006-09-21
申请号：JP2006158874
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a high purity Ta material for obtaining a high reliability semiconductor element by employing a film composed of a high melting point metal, an alloy of high melting point metal, a silicide of high melting point metal, or a nitride of Ti, Ta, W, or Ti-W alloy in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element.
SOLUTION: In the high purity Ta material for magnetron sputtering apparatus, content of Al in the contact barrier layer composed of a Ta nitride in a semiconductor element having a junction depth of 0.1-0.3 μm in the source-drain region is 1×10
17 /cm
3 or less in atomic number, content of heavy metal elements other than Ta is 1×10
17 /cm
3 or less, content of alkaline metal is 3×10
16 /cm
3 or less, and concentration of Al is 1 ppm or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于通过使用由高熔点金属，高熔点金属的合金，高熔点金属的硅化物构成的膜来获得高可靠性半导体元件的高纯度Ta材料，或Ti，Ta，W或Ti-W合金的氮化物，从而抑制半导体元件的漏电流。解决方案：在用于磁控溅射装置的高纯度Ta材料中，源极 - 漏极区域中结晶深度为0.1-0.3μm的半导体元件中的Ta氮化物的接触阻挡层中的Al含量为1 ×10 17 / cm 3 以下，重金属元素除Ta以外的含量为1×10 17 / SP > 3 以下，碱金属的含量为3×10 16 / cm 3 / SP> 3以下，Al浓度为1ppm以下。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006253720A PROCESS FOR PRODUCING HIGH PURITY Ti MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 有权
标题翻译：用于制造磁性溅射装置的高纯Ti材料的方法
公开(公告)号：JP2006253720A
公开(公告)日：2006-09-21
申请号：JP2006158873
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a production process of a high purity Ti material for obtaining a high reliability semiconductor element by employing a film composed of a Ti nitride in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element.
SOLUTION: In the production process of a high purity Ti material for magnetron sputtering apparatus, Al is removed from a Ti material with its concentration held to 3 ppm or less by electron beam dissolution process in order to form the contact barrier layer composed of a Ti nitride in a semiconductor element having a junction depth of 0.1-0.3 μm in the source-drain region with atomic number of 1×10
18 /cm
3 or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高纯Ti材料的制造方法，用于通过在接触阻挡层，栅电极等中使用由Ti氮化物构成的膜来获得高可靠性的半导体元件，从而抑制泄漏半导体元件的电流。解决方案：在用于磁控溅射装置的高纯度Ti材料的制造方法中，通过电子束溶解工艺将Al浓度保持在3ppm以下的Ti材料中去除Al，以形成接触阻挡层在原子序数为1×10 18 / cm 3 / SP> 3的源极 - 漏极区域中具有0.1-0.3μm的结深度的半导体元件中的Ti氮化物。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006016238A Hydrogen manufacturing unit 有权
标题翻译：氢制造单位
公开(公告)号：JP2006016238A
公开(公告)日：2006-01-19
申请号：JP2004194618
申请日：2004-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： ARAI RYOICHI , SATO MICHIO , NAITO SUSUMU , IZUMI MIKIO , WATABE KAZUMI , ONODERA TORU , TAKAHASHI RIYOUTA , FUKUYA MASARU
IPC分类号： C01B3/02 , G01F23/28 , G01F23/288 , G01F23/64 , H01M8/06
CPC分类号： B01J19/10 , B01J2219/00182 , B01J2219/00186 , B01J2219/002 , B01J2219/1923 , C01B3/04 , C01B7/135 , C01B7/14 , C01B13/0203 , H01M8/0606 , Y02E60/364
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen manufacturing unit capable of accurately measuring without contact the position of a boundary surface and the component/concentration of fluids to be measured in a reactor. SOLUTION: In this hydrogen manufacturing unit, at least an ultrasonic wave probe 16 for boundary surface detection is set on the bottom wall 11a of the reactor 11 of the hydrogen manufacturing unit using IS process, and ultrasonic wave probes, 17a, and 17b for sound velocity correction on the side wall 11b of the reactor 11. Each ultrasonic wave probes, 16, 17a, and 17b is connected each to an ultrasonic wave sender receiver, 18, 19a, and 19b, and the each ultrasonic wave sender receiver 18, 19a, and 19b is connected to a data processing/calculating unit 20, and constitutes a multilayer liquid surface measuring unit 10. With this multilayer liquid surface measuring unit 10, the location of boundary surface Fa, and Fb of the fluids A and B to be measured, contained in the reactor 11 is detected using an ultrasonic wave without contact. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种氢制造单元，其能够在不接触边界面的位置和在反应器中待测量的流体的成分/浓度的情况下进行精确测量。解决方案：在该氢气制造单元中，至少使用用于边界表面检测的超声波探头16在使用IS工艺的氢制造单元的反应器11的底壁11a上设置，超声波探头17a和 17b用于在反应堆11的侧壁11b上进行声速校正。每个超声波探测器16,17a和17b分别连接到超声波发射器接收器18,19a和19b，并且每个超声波发射器接收器 18,19a和19b连接到数据处理/计算单元20，并构成多层液面测量单元10.利用该多层液面测量单元10，流体A的边界面Fa和Fb的位置以及使用没有接触的超声波检测包含在电抗器11中的待测量B。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005233865A Method and device for determining corrosion in structural member 审中-公开
标题翻译：用于确定结构构件腐蚀的方法和装置
公开(公告)号：JP2005233865A
公开(公告)日：2005-09-02
申请号：JP2004045775
申请日：2004-02-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO MICHIO , ARAI RYOICHI , MAEKAWA TATSUYUKI , IZUMI MIKIO , WATABE KAZUMI , NARUSE KATSUHIKO
IPC分类号： G01N29/04 , G01N17/00 , G01N29/11 , G01N29/22 , G01N29/44 , G01N29/10
CPC分类号： G01N29/449 , G01N29/11 , G01N29/4454 , G01N2291/0258 , G01N2291/0421 , G01N2291/044
摘要： PROBLEM TO BE SOLVED: To provide a method and a device capable of determining the reliably the presence of corrosion on the inner face of a structural member by means of a simple technology, without discriminating individual multiple echoes, using a low frequency of ultrasonic wave.
SOLUTION: An ultrasonic pulse is transmitted toward the inside of the structural member by an ultrasonic probe 1, arranged on a surface 7 of the structural member 5, having the surface and a reverse face to detect ultrasonic echoes 8, 9 generated by repeated reflections of the ultrasonic pulse on the reverse face 6; the surface of the structural member, and the corrosion is determined, using the fact that the ultrasonic echoes are great when the reverse face of the structural member is sound; and that the ultrasonic echoes are small, when a corrosion part exists on the reverse face of the structural member.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种方法和装置，其能够通过简单的技术可靠地确定结构构件的内表面上的腐蚀，而不区分各个多重回波，使用低频率超声波。解决方案：通过超声波探头1将超声波脉冲传送到结构件内部，超声波探头1布置在具有表面和反面的结构构件5的表面7上，以检测由超声波探头1产生的超声回波8,9 在反面6上重复反射超声脉冲; 结构构件的表面和腐蚀被确定，当结构构件的反面是声音时，使用超声波回波大的事实; 并且当结构构件的反面上存在腐蚀部分时，超声波回波较小。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005012237A MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, AND Ta MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 审中-公开
标题翻译：半导体元件的制造方法和磁控溅射装置的材料
公开(公告)号：JP2005012237A
公开(公告)日：2005-01-13
申请号：JP2004246805
申请日：2004-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： C23C14/14 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a high reliability semiconductor element which uses a film made of refractory metal, alloy made of refractory metal, silicide of refractory metal, and nitride of Ti, Ta, W, and Ti-W alloy, for a contact barrier layer, a gate electrode or the like, and reduces a leakage current of itself.
SOLUTION: The manufacturing method of semiconductor element includes steps of : removing Al from a Ta raw material to prepare a Ta material for magnetron sputtering apparatus, of which Al concentration is 1ppm or less; using the Ta material to form a contact barrier or gate electrode layer of which Al content is 1×10
18 atoms/cm
3 , where the depth of junction of a source/drain region is 0.3 μm or shallower.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用由难熔金属制成的膜，耐火金属制的合金，难熔金属的硅化物和Ti，Ta，W和Ti-W合金的氮化物的高可靠性的半导体元件，用于接触阻挡层，栅电极等，并且减少其自身的漏电流。解决方案：半导体元件的制造方法包括以下步骤：从Ta原料中去除Al，制备Al浓度为1ppm以下的磁控溅射装置用Ta材料; 使用Ta材料形成其中Al含量为1×10 -6原子/ cm 3 SP / 3的接触屏障或栅极电极层，其中源极/ 漏极区域为0.3μm或更浅。版权所有（C）2005，JPO＆NCIPI

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