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1. 发明专利

JP2010114776A Acoustic transducer 审中-公开
标题翻译：声学传感器
公开(公告)号：JP2010114776A
公开(公告)日：2010-05-20
申请号：JP2008287043
申请日：2008-11-07
申请人： Toshiba Corp , 株式会社東芝
发明人： YASUMOTO YASUAKI , YANASE NAOKO , OHARA RYOICHI , MASUKO SHINGO , SANO KENYA
IPC分类号： H04R17/02 , H04R19/04
摘要： PROBLEM TO BE SOLVED: To provide an acoustic transducer having a membrane, which controls sound pressure on the back face of the membrane while improving sensitivity of the acoustic transducer.
SOLUTION: The acoustic transducer includes: a substrate 111 including a back cavity 201 formed on the back surface of the substrate and functioning as acoustic capacitance, ventilation holes 202
1 , 202
2 opened on the front side of the substrate, located on the side of the back cavity and functioning as acoustic resistance, and communication paths 203
1 , 203
2 located on the side of the back cavity for allowing the back cavity to communicate with the ventilation holes; and an acoustic element 112 formed on the front surface of the substrate, located above the back cavity, and located on the side of the ventilation holes.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有膜的声换能器，其在改善声换能器的灵敏度的同时控制膜的背面上的声压。声学换能器包括：基板111，其包括形成在基板的背面上并用作声电容的后腔201，通风孔202，SB2， / SB>在基体的正面侧开放，位于背腔的一侧并且起声音的作用，并且位于其上的通信路径203 1 203 2 后腔的一侧用于允许后腔与通气孔连通; 以及形成在所述基板的前表面上并位于所述后腔上方并位于所述通气孔侧的声学元件112。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2006345170A THIN-FILM PIEZOELECTRIC RESONATOR 审中-公开
公开(公告)号：JP2006345170A
公开(公告)日：2006-12-21
申请号：JP2005168251
申请日：2005-06-08
申请人： TOSHIBA CORP
发明人： OHARA RYOICHI , YANASE NAOKO , SANO KENYA , YASUMOTO YASUAKI , ITAYA KAZUHIKO , KAWAKUBO TAKASHI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/316
摘要： PROBLEM TO BE SOLVED: To provide a thin-film piezoelectric resonator being capable of improving a Q value and being capable of preventing unnecessary spurious vibrations while being capable of enhancing the mechanical strength of a resonator. SOLUTION: The thin-film piezoelectric resonator 10 has the resonator 5 composed of a substrate 1 with a cavity 11, a first electrode 2, a piezoelectric body 3 and a second electrode 4 on the cavity 11 and the overlapping section of the cavity 11, the first electrode 2, the piezoelectric body 3, and the second electrode 4. A second leading-out electrode 41 is connected to the second electrode 4, and a wiring width W2 along the opening periphery of the cavity 11 is set at a value longer than a peripheral length overlapped to the cavity 11 of the second electrode end 42 in the second leading-out electrode 41. A first peripheral length L1 prescribed by the first electrode end 22 of the resonator section 5 is set at the value longer than a second peripheral length L2 prescribed by the second electrode end 42. COPYRIGHT: (C)2007,JPO&INPIT

3. 发明专利

JP2006197413A Thin film piezoelectric element, thin film piezoelectric resonator and manufacturing method thereof 审中-公开
标题翻译：薄膜压电元件，薄膜压电谐振器及其制造方法
公开(公告)号：JP2006197413A
公开(公告)日：2006-07-27
申请号：JP2005008431
申请日：2005-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： ITAYA KAZUHIKO , OHARA RYOICHI , SANO KENYA , YASUMOTO YASUAKI , YANASE NAOKO , KAWAKUBO TAKASHI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/313 , H03H3/02
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric resonant element and a thin film piezoelectric resonator which are provided with a new electrode connection structure and are excellent in characteristics and whose miniaturization and light weightness can be realized, and a manufacturing method for them. SOLUTION: The thin film piezoelectric resonant element 1 and the thin film piezoelectric resonator are provided with a board 2, a first electrode 31 disposed in a first area A on the front face of the board 2, an extraction electrode 32 disposed in a second area B different from the first area A on the front face of the board 2, one end of which is electrically connected to the first electrode 31 and the other end of which is formed so as to be extracted from the rear face of the board 2, a piezoelectric material thin film 4 disposed on the first electrode 31, a second electrode 5 on the piezoelectric material thin film 4, and a cavity 21 for resonance disposed in the board 2 at the part where the first electrode 31 is disposed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供具有新的电极连接结构的压电谐振元件和薄膜压电谐振器，并且具有优异的特性，并且能够实现小型化和轻量化，以及它们的制造方法。解决方案：薄膜压电谐振元件1和薄膜压电谐振器设置有基板2，设置在基板2的正面上的第一区域A中的第一电极31，设置在基板2的前面的第一区域A中的第一电极31 与板2的前表面上的与第一区域A不同的第二区域B，其一端电连接到第一电极31，并且其另一端形成为从第二区域A的背面板2，设置在第一电极31上的压电材料薄膜4，压电材料薄膜4上的第二电极5和设置在第一电极31的部分处的板2中的谐振腔21。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005303573A Thin film piezoelectric resonator and its manufacturing method 审中-公开
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：JP2005303573A
公开(公告)日：2005-10-27
申请号：JP2004115184
申请日：2004-04-09
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAKUBO TAKASHI , ITAYA KAZUHIKO , SANO KENYA , YASUMOTO YASUAKI , OHARA RYOICHI , YANASE NAOKO
IPC分类号： H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To obtain a thin film piezoelectric resonator which has a piezoelectric film of high orientation and which does not arise a fault, such as causing spurious swinging. SOLUTION: A lower electrode 3 and a piezoelectric film 4 in the thin film piezoelectric resonator are formed continuously. And, the height from a silicon substrate 1 on the front surface of the piezoelectric film 4 is made equivalent to the height of the front surface of an insulating film 6 to become a spacer formed on the side face of the piezoelectric film so that the upper electrode 7 is formed to become one plane shape. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得具有高取向的压电膜并且不产生故障的薄膜压电谐振器，例如引起杂散摆动。解决方案：薄膜压电谐振器中的下电极3和压电膜4连续地形成。并且，使来自压电膜4的表面上的硅衬底1的高度等于绝缘膜6的前表面的高度，以形成在压电膜的侧面上形成的隔离物，使得上部电极7形成为一个平面形状。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005039292A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005039292A
公开(公告)日：2005-02-10
申请号：JP2004280547
申请日：2004-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUSHIMA SHIN , DEWA MITSUAKI , SANO KENYA , YANASE NAOKO , ABE KAZUHIDE , KAWAKUBO TAKASHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor having a thin film capacitor where the worsening of the morphology caused by the oxidation of an electrode/dielectric interface, the deterioration of the capacitor characteristics caused by the electrode material and the deterioration of the characteristics of the electrode material per se are prevented. SOLUTION: The semiconductor device is of such the semiconductor device provided with the thin capacitor 3 where a dielectric film 5 comprising a perovskite oxide and an upper electrode 6 are laminated and disposed on a lower electrode 4. At least any of the lower electrode 4 and the upper electrode 6 has a laminated layer of an electrode layer 8 comprising a conductive perovskite oxide disposed so as to contact the laminated layer of conductive perovskite oxides of at least two kinds, for example, the dielectric thin film 5 and an electrode buffer layer 7 comprising the conductive perovskite oxide which is different from the conductive perovskite oxide comprising the electrode layer 8 and is stable at a low oxygen partial pressure. A perovskite oxide with the deficiency of oxygen and constituent element substitution or the like is used for the electrode buffer layer 7. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有薄膜电容器的半导体，其中由电极/电介质界面的氧化导致的形态恶化，电极材料引起的电容器特性的劣化和防止电极材料本身的特性。解决方案：半导体器件具有设置有薄电容器3的半导体器件，其中包含钙钛矿氧化物的电介质膜5和上电极6层压并设置在下电极4上。至少任何一个下部电极电极4和上电极6具有包括导电钙钛矿氧化物的电极层8的叠层，所述导电钙钛矿氧化物与至少两种导电钙钛矿氧化物的层压层接触，例如电介质薄膜5和电极缓冲层7，其包含不同于包含电极层8的导电钙钛矿氧化物的导电钙钛矿氧化物，并且在低氧分压下是稳定的。电极缓冲层7使用具有缺氧性和构成元素置换等的钙钛矿型氧化物。（C）2005，JPO＆NCIPI

6. 发明专利

JP2002270782A FERROELECTRIC CAPACITOR 失效
公开(公告)号：JP2002270782A
公开(公告)日：2002-09-20
申请号：JP2001072467
申请日：2001-03-14
申请人： TOSHIBA CORP
发明人： YASUMOTO YASUAKI , ABE KAZUHIDE , YANASE NAOKO , KAWAKUBO TAKASHI
IPC分类号： H01L27/105 , H01L21/8246
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor which uses a strained ferroelectric film and which displays stable retention characteristic. SOLUTION: The ferroelectric capacitor is obtained, in such a way that a lower electrode 12 composed of a conductive oxide, the ferroelectric film 13 composed of a perovskite oxide and an upper electrode 14 composed of a conductive oxide are epitaxially grown sequentially on a single-crystal substrate 11. The upper electrode 14 and the ferroelectric film 13 are worked in batch, by anisotropic dry etching operation using one mask. The film thickness t of the ferroelectric film 13 is set in the range of 0.25 Su Su/Sb>=0.25.

7. 发明专利

JP2014183248A Semiconductor device and strain monitoring device 有权
标题翻译：半导体器件和应变监测器件
公开(公告)号：JP2014183248A
公开(公告)日：2014-09-29
申请号：JP2013057711
申请日：2013-03-21
申请人： Toshiba Corp , 株式会社東芝
发明人： YASUMOTO YASUAKI , YANASE NAOKO , OHARA RYOICHI , MASUKO SHINGO , SANO KENYA , KAKIUCHI YORITO , NODA TAKAO , IIDA ATSUKO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L25/07 , H01L25/18 , H01L27/06
CPC分类号： G01L1/2293 , H01L24/05 , H01L27/0738 , H01L28/24 , H01L29/1608 , H01L29/7803 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable.SOLUTION: In a semiconductor device 10, a semiconductor substrate 12 has first and second regions 12a and 12b. An insulated gate field effect transistor 13 is provided in the first region 12a. There is provided a strain gage portion 14 having: a long metal resistor 37 provided more inside than an upper surface of the semiconductor substrate 12, in the second region 12b; a first insulating film 51 which is provided between the semiconductor substrate 12 and the metal resistor 37 and extends to an upper surface of the semiconductor substrate 12; and a second insulating film 53 provided over the first insulating film 51 across the metal resistor 37. The semiconductor substrate 12 is mounted on a substrate 15.
摘要翻译：要解决的问题：提供高可靠性的半导体器件。解决方案：在半导体器件10中，半导体衬底12具有第一和第二区域12a和12b。绝缘栅场效应晶体管13设置在第一区域12a中。提供了一种应变计部分14，其具有：比第二区域12b中的半导体衬底12的上表面更内侧设置的长金属电阻器37; 第一绝缘膜51，设置在半导体基板12和金属电阻器37之间并延伸到半导体基板12的上表面; 以及跨越金属电阻器37设置在第一绝缘膜51上的第二绝缘膜53.半导体基板12安装在基板15上。

8. 发明专利

JP2010219874A Acoustic electronic component and method of manufacturing the same 审中-公开
标题翻译：声学电子元件及其制造方法
公开(公告)号：JP2010219874A
公开(公告)日：2010-09-30
申请号：JP2009064192
申请日：2009-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： MASUKO SHINGO , OHARA RYOICHI , SANO KENYA , YASUMOTO YASUAKI , YANASE NAOKO
IPC分类号： H04R17/02 , H04R31/00
摘要： PROBLEM TO BE SOLVED: To provide an acoustic electronic component comprising a wire pad having high bonding reliability, and to provide a method of manufacturing the same.
SOLUTION: An acoustic electronic component comprises: a mount substrate 101; a wafer chip 102 disposed on the mount substrate; a wire pad 104 formed on the wafer chip; and a wire 105 connected to the wire pad. The wire pad comprises: a piezoelectric film 131 formed on the wafer chip; and a conductive film 132 formed on the piezoelectric film to form the top layer of the wire pad. The wire is connected to the conductive film at the upper part of the piezoelectric film. The piezoelectric film contains at least either oxygen or nitrogen and the Young's modulus of the piezoelectric film is 200×10
9 [N/m
2 ] or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括具有高粘合可靠性的焊盘的声学电子部件，并提供其制造方法。解决方案：声学电子部件包括：安装基板101; 设置在安装基板上的晶片芯片102; 形成在晶片芯片上的线焊盘104; 以及与导线焊盘连接的电线105。线焊盘包括：形成在晶片芯片上的压电膜131; 以及形成在压电膜上的导电膜132，以形成线焊盘的顶层。导线连接到压电薄膜上部的导电薄膜。压电膜至少含有氧或氮，压电膜的杨氏模量为200×10 [N / m×SP> 2 ]以上。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009077159A Thin-film piezoelectric resonator and method of manufacturing the same 审中-公开
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：JP2009077159A
公开(公告)日：2009-04-09
申请号：JP2007244259
申请日：2007-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： YASUMOTO YASUAKI , YANASE NAOKO , OHARA RYOICHI , MASUKO SHINGO , SANO KENYA , ONO TETSUYA
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/332 , H01L41/39 , H03H3/02
摘要： PROBLEM TO BE SOLVED: To improve a manufacture yield upon forming cavity through etching of a sacrifice layer, in the production of a thin-film piezoelectric resonator. SOLUTION: The thin-film piezoelectric resonator includes a substrate 1, an annular structural supporting body 3 formed on the substrate 1, a protective layer 4 formed on the support 3 so as to cover a cavity part 10 enclosed by the substrate 1 and the annular structural support 3, a lower electrode 5 formed on the protective layer 4 so as to have an aperture above the cavity part 10 and cover the cavity part 10 while covering the whole area of inside rim 21 on the upper surface of the annular structural support 3, a piezoelectric film 6, formed on the lower electrode 5 and the protective layer 4, and an upper electrode 7 arranged above the cavity part 10 and formed on the piezoelectric film 6 while the aperture is formed so as to directly connect the protective layer 4 to the piezoelectric film 6 and is provided with an etching via 9, penetrating through the protective layer 4 from the piezoelectric film 6 and arriving at the cavity part 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在制造薄膜压电谐振器时，通过蚀刻牺牲层来改善在形成腔体时的制造成品率。解决方案：薄膜压电谐振器包括基板1，形成在基板1上的环形结构支撑体3，形成在支撑件3上的保护层4，以覆盖由基板1包围的空腔部分10 和环状结构支撑体3，形成在保护层4上的下部电极5，以在空腔部分10上方具有孔，并覆盖空腔部分10，同时覆盖环形部分10的上表面上的内侧边缘21的整个区域结构支撑体3，形成在下电极5和保护层4上的压电膜6，以及设置在空腔部分10上方并形成在压电膜6上的上电极7，同时形成孔，以便直接连接保护层4到压电膜6并且设置有蚀刻通孔9，从压电膜6穿过保护层4并到达空腔部分10.版权所有（C）2009，JPO和INPIT

10. 发明专利

JP2007049302A Thin-film piezoelectric resonator and manufacturing method thereof 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：JP2007049302A
公开(公告)日：2007-02-22
申请号：JP2005229815
申请日：2005-08-08
申请人： Toshiba Corp , 株式会社東芝
发明人： ITAYA KAZUHIKO , OHARA RYOICHI , SANO KENYA , YASUMOTO YASUAKI , YANASE NAOKO
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H9/132 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/174 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a thin-film piezoelectric resonator capable of improving resonance characteristics and reducing size. SOLUTION: The thin-film piezoelectric resonator 1 comprises a substrate 2 having a cavity 2H, a first electrode 5 on the cavity 2H, a piezoelectric body 6 on the first electrode 5, and a second electrode 7 on the piezoelectric body 6. One portion 71 of the periphery of the second electrode 7 is overlapped to the cavity 2H for arrangement, an interior angle θ formed by an end face at one portion 71 of the periphery of the second electrode 7 and the bottom surface is set to 30° or smaller. COPYRIGHT: (C)2007,JPO&INPIT

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