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1. 发明专利

JP2006049925A MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF Ti MATERIAL FOR MAGNETRON SPUTTERING SYSTEM 有权
标题翻译：半导体器件的制造方法及其制造方法，用于磁控溅射系统
公开(公告)号：JP2006049925A
公开(公告)日：2006-02-16
申请号：JP2005270372
申请日：2005-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C22B9/22 , C22B34/12 , C22C5/04 , C22C14/00 , C22C19/03 , C22C19/07 , C22C27/02 , C22C27/04 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To suppress a leak current of a semiconductor device by employing a film consisting of a refractory metal, an alloy consisting of the refractory metal, silicide of the refractory metal, and nitride of Ti, Ta, W, and a Ti-W alloy, in such as a contact barrier layer or a gate electrode in order to obtain the highly reliable semiconductor device.
SOLUTION: In the manufacturing method of the semiconductor device, a Ti material for a magnetron sputtering system having an Al concentration not higher than 3 ppm is prepared by removing Al from the Ti material, and a contact barrier or a gate electrode layer having an Al content not higher than 1×10
18 atoms/cm
3 and being crystalline or amorphous is formed using the Ti material by a sputtering method, wherein a junction depth of a source-drain region is 0.3 μm or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过使用由难熔金属组成的膜，由难熔金属，难熔金属的硅化物和Ti，Ta，W的氮化物组成的合金来抑制半导体器件的漏电流，和Ti-W合金，例如接触阻挡层或栅电极，以获得高度可靠的半导体器件。解决方案：在半导体器件的制造方法中，通过从Ti材料中除去Al而制备Al浓度不高于3ppm的用于磁控溅射系统的Ti材料，并且接触势垒或栅电极层使用Ti材料通过溅射法形成Al含量不高于1×10 18 原子/ cm 3的结晶或非晶体，其中结晶深度源极 - 漏极区域为0.3μm以下。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005005732A Formation method for high-purity conductive film for semiconductors 审中-公开
标题翻译：用于半导体的高纯度导电膜的形成方法
公开(公告)号：JP2005005732A
公开(公告)日：2005-01-06
申请号：JP2004246808
申请日：2004-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a formation method for a film that is composed of a high-melting point metal, an alloy comprising a high-melting point metal, a silicide of a high-melting point metal, or a nitride of Ti, Ta, W, and Ti-W alloy, which can be used for a contact barrier layer or a gate electrode to control leakage current of a semiconductor device, thus obtaining a high reliability semiconductor device.
SOLUTION: This formation method for a high-purity conductive film for semiconductor, employs a sputtering method to form the semiconductor device high-purity conductive film that is an electric conductor whose contact barrier or gate electrode layer for a semiconductor device is composed of Co silicide, the semiconductor device in which the junction depth in the source drain region is equal to or smaller than 0.3μm, and the Al content of which is equal to or smaller than 1×10
18 /cm
3 , in terms of the number of atoms.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种由高熔点金属，包含高熔点金属，高熔点金属的硅化物或氮化物的合金构成的膜的形成方法的Ti，Ta，W和Ti-W合金，其可用于接触势垒层或栅电极以控制半导体器件的漏电流，从而获得高可靠性的半导体器件。解决方案：这种用于半导体的高纯度导电膜的形成方法采用溅射法形成半导体器件高纯度导电膜，该导电膜是其半导体器件的接触屏障或栅电极层组成的导电体的Co硅化物，其中源漏区中的结深度等于或小于0.3μm，Al含量等于或小于1×10 18的半导体器件， cm 3 ，就原子数而言。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JPH11317379A HIGH-PURITY CONDUCTIVE FILM FOR SEMICONDUCTOR DEVICE AND FORMATION THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JPH11317379A
公开(公告)日：1999-11-16
申请号：JP4198899
申请日：1999-02-19
申请人： TOSHIBA CORP
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： C23C14/06 , C23C14/14 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To enable reduction of leakage current, by forming a conductive film of a conductor obtained by sputtering, and controlling the Al content of the conductor to a specific number of atoms or below. SOLUTION: A contact barrier layer 1 as a conductive film composed of Ti-W is formed on the p region 2 formed on an n-type substrate 3, and an Al layer 4 as a wiring film is formed thereon to obtain a diode as a semiconductor device. The contact barrier layer 1 is formed by sputtering, and the Al content of the Ti-W film is controlled to 1×10 pieces/cm or below. The conductor is composed of one or more metals chosen from Ti, W, Mo, Zr, Hf, Ta, V, Nb, Ir, Fe, Ni, Cr, Co, Pd, and Pt. (However, conductors composed of Mo-W alloy or nitride are excluded).

4. 发明专利

JPH0754139A SPUTTERING TARGET 失效
公开(公告)号：JPH0754139A
公开(公告)日：1995-02-28
申请号：JP20417594
申请日：1994-08-08
申请人： TOSHIBA CORP
发明人： FUKAZAWA MIHARU , KAWAI MITSUO , ISHIHARA HIDEO , UMEKI TAKENORI , OANA YASUHISA
IPC分类号： C22C27/02 , C23C14/14 , C23C14/34
摘要： PURPOSE:To provide a sputering target excellent in the formability of an alloy film excellent in electric conductivity, workability, the formability of an oxidized film and other various properties. CONSTITUTION:This sputtering target is a composite target in which the area ratio of molybdenum and tantalum is requlated so as to regulate into, by atom, 15-50% molybdenum, and the balance tantalum with an incidental impurity. Thus, the target extremely small in specific resistance can be obtd.

5. 发明专利

JPH05211326A SEMICONDUCTOR ELEMENT HIGH PURITY CONDUCTIVE FILM AND SEMICONDUCTOR ELEMENT USING THEREOF 失效
公开(公告)号：JPH05211326A
公开(公告)日：1993-08-20
申请号：JP331692
申请日：1992-01-10
申请人： TOSHIBA CORP
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/285 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49
摘要： PURPOSE:To suppress a leak current as low as possible by specifying the Al content in a conductor. CONSTITUTION:A high purity conductive film for semiconductor element, having an Al content of 1X10 piece/cm or smaller in atomic number, is formed. A conductor is composed of the nitride such as Ti-W alloy and the like. A contact barrier layer 1 is formed on a p region 2 formed on an n-type substrate 3 as a conductive film consisting of Ti-W, and a diode, on which an Al layer 4 is formed as a wiring film, is formed thereon as a semiconductor element. The contact barrier layer is formed by mixing high purity W and Ti powder in such a manner that Ti-W of 10wt.% will be obtained, the powder is filled in a mold and sintered. When the content of Al is brought to the prescribed value or smaller, there is almost no change in the value of leak current in B and C, but it sharply increases in A. The increase of leak current is due to the increase of Al content. Accordingly, the increase of leak current can be suppressed effectively by decreasing the content of Al in the film.

6. 发明专利

JPH04152069A METAL BOND TOOL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04152069A
公开(公告)日：1992-05-26
申请号：JP27337090
申请日：1990-10-15
申请人： TOSHIBA CORP
发明人： HORIE HIROMICHI , KAWAI MITSUO , KANBARA NAOTO
IPC分类号： B24D3/02 , B24D3/06
摘要： PURPOSE:To increase the holding strength of abrasive grains, by forming a strong matrix with the alloy composed of two or more kinds of metal elements selected from nickel, cobalt, steel, magnesium, zinc and aluminum. CONSTITUTION:In the case of manufacturing a metal bond tool having the abrasive grain layer consisting of an alloy powder and abrasive grains, the alloy composed of two or more kinds of metal elements selected from nickel, cobalt, steel, magnesium, zinc and aluminum, and containing 1.5-4.5wt.% carbon, is melted with its heating. The liquid metal thus obtained is degradated and also cooled to the temperature of 200 deg.C or lower at the cooling speed of 5 deg.C or more per second, thereafter the abrasive grain layer is formed by integrally sintering the mixture of the obtained alloy powder and abrasive powder, and a desired metal bond tool is obtained.

7. 发明专利

JPH04152068A METAL BOND TOOL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04152068A
公开(公告)日：1992-05-26
申请号：JP27336990
申请日：1990-10-15
申请人： TOSHIBA CORP
发明人： HORIE HIROMICHI , KAWAI MITSUO , KANBARA NAOTO
IPC分类号： B24D3/02 , B24D3/06
摘要： PURPOSE:To form a matrix which is soft comparatively and of high toughness and to obtain a metal tool of high quality with chip and attachment being difficult to cause on the face to be ground, by using an alloy composed of more than two kinds of metals selected from iron, nickel, cobalt and copper. CONSTITUTION:In the case of manufacturing a metal bond tool having the abrasive grains layer composed of the sintered body of an alloy and abrasive grains, a solid solution is formed with the alloy composed of more than two kinds of metals selected from iron, nickel, cobalt and copper and containing 1.5-4.5wt.% carbon being heated to the temperature more than a solid solution temperature, and the obtained solid solution is cooled to the temperature of =1 deg.C/second. Thereafter, the alloy and abrasive grains are mixed, sintered integrally to form an abrasive grains layer, and a desired metal bond tool is obtained.

8. 发明专利

JPH03130360A TARGET FOR SPUTTERING AND ITS PRODUCTION 失效
公开(公告)号：JPH03130360A
公开(公告)日：1991-06-04
申请号：JP32967889
申请日：1989-12-21
申请人： TOSHIBA CORP
发明人： SATO MICHIO , YAMANOBE TAKASHI , KAWAI MITSUO , KAWAGUCHI TATSUZO , MIHASHI KAZUHIKO , MIZUTANI TOSHIAKI
IPC分类号： C04B35/58 , C04B35/645 , C23C14/34 , H01L21/203 , H01L21/285
摘要： PURPOSE:To produce the sputtering target made of a high melting point metal silicide having a high density and high quality by mixing a specific high melting point metal and high purity Si in a powder state at a specific ratio, packing the mixture into a mold for a hot press, degassing the mixture in a vacuum, then pressurizing and molding the mixture and sintering the molding at a high temp. CONSTITUTION:The fine powder of the high melting point metal M, such as W, Mo, Ti, Zr, Hf, Nb, or Ta, and the Si powder contg. at least one kind of B, P, Sb and As and having 0.01 to 1OMEGAcm electric resistivity are added and are mixed in a ball mill kept in a gaseous Ar atmosphere. This powder is packed into the mold made of high purity graphite for the hot press and is subjected to the vacuum degassing; thereafter, the powder is heated at a high temp. under pressurization to synthesize MSi2; further, the temp. is raised and the powder is sintered. The granular MSi2 phase disperses in the Si matrix phase. The sputtering target made of the high melting point metal silicide of the high density and high quality having the compsn. expressed by MSiX (X: 2 to 4), the boundary layer of 100 to 5000Angstrom thickness at the boundary of the Si matrix phase and the MSi2 phase and

9. 发明专利

JPH0398767A MANUFACTURE OF METAL BONDED TOOL 失效
公开(公告)号：JPH0398767A
公开(公告)日：1991-04-24
申请号：JP23299789
申请日：1989-09-11
申请人： TOSHIBA CORP
发明人： HORIE HIROMICHI , KAWAI MITSUO , KANBARA NAOTO
IPC分类号： B24D3/00 , B24D3/06
摘要： PURPOSE:To improve the degree of sintering to a great extent by applying plastic deformation machining to iron base alloy powder forming a sintered body in advance so as to generate machining deformation, thereby heightening the activity of the alloy powder surface. CONSTITUTION:At the time of manufacturing a metal bonded tool provided with an abrasive grain layer formed of a sintered body of iron base alloy powder containing carbon and abrasive grain, plastic deformation machining of over 5% draft is previously applied to the iron base alloy powder as raw material. The mixture of the iron base alloy powder and abrasive grain is then compression-molded and integrally sintered, thus forming the abrasive grain layer.

10. 发明专利

JPH0360119A SPUTTERING TARGET 失效
公开(公告)号：JPH0360119A
公开(公告)日：1991-03-15
申请号：JP19434589
申请日：1989-07-28
申请人： TOSHIBA CORP
发明人： SATO MICHIO , KAWAI MITSUO , FUKAZAWA MIHARU
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285
摘要： PURPOSE:To decrease remarkedly the amount of particles, which are generated at the initial stage of sputtering, and to obtain a sputtering target with a high yield rate of production, by a method wherein the surface, at least the surface to be sputtered, of the sputtering target is subjected to electropolishing treatment. CONSTITUTION:An electropolishing treatment is performed on the surface, at least m the surface to be sputtered, of a sputtering target performed a prescribed machining. After the electropolishing treatment is performed, a water washing and the like are performed according to a conventional procedure to prevent corrosion on the target. Thereby, an electrolyte solution component remaining on the surface of the target is completely removed and a mosaic target 1, which is arranged on a circumference and is combined, is formed. As a layer defective in working is removed from this target 1 and the state of the surface of the target 1 is excellent, the amount of particles which are generated at the time of sputtering is rapidly decreased from immediately after the state of sputtering. Accordingly, it is possible to manufacture efficiently a product having little defect and the yield of the product is significantly improved.

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