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    • 6. 发明专利
    • ELECTROPHOTOGRAPHIC SENSITIVE BODY AND ITS MANUFACTURE
    • JPH0588395A
    • 1993-04-09
    • JP25001891
    • 1991-09-30
    • TOSHIBA CORP
    • NAKAMURA YUKAKAGA HIDEKAZUTAKAHASHI MASASHI
    • G03G5/14
    • PURPOSE:To provide an electrophotographic sensitive body which checks interference of light when the surface of the photosensitive body is exposed with coherent light and prevents image defects, such as those caused by defective substrates from occurring. CONSTITUTION:In an electrophotographic sensitive body where an intermediate layer and a photosensitive body layer are laminated and arranged on an electrically conductive substrate, an uncut pipe stock is used as the electrically conductive substrate and on the electrical conductive substrate is provided an intermediate layer having 0.5-30mum film thickness which consists of one or plural kinds of resin and whose surface is formed into a rough one with =0.3mum max. surface roughness. This constitution provides the proper shape of rough surface and film thickness of the surface of the intermediate layer and checks the generation of interference fringes and prevents image defects due to the use of an uncut pipe stock, for example, caused by recessed and projected defects on the electrically conductive substrate and further checks the rise of residual potential, etc. Thereby the formation of a good image without interference fringes and other image defects is attained.
    • 7. 发明专利
    • ELECTROPHOTOGRAPHIC SENSITIVE BODY
    • JPH0412364A
    • 1992-01-16
    • JP11439590
    • 1990-04-28
    • TOSHIBA CORP
    • KAGA HIDEKAZU
    • G03G5/043
    • PURPOSE:To prevent the generation of the film peeling, deformation, etc., arising from a difference in the coefft. of thermal expansion between the constituting resin of a charge generating layer and the constituting resin of a charge transfer layer by specifying the ratio between the coeffts. of thermal expansion of these constituting resins. CONSTITUTION:The laminated type electrophotographic sensitive body is constituted of the charge generating layer CGL 2 and charge transfer layer CTL 3 having the ratior of the coeffts. of thermal expansion between these layers ranging from 0.8 to 1.2. The difference in the coefft. of thermal expansion between the CGL 2 and the CTL 3 is small in this way and, therefore, the generation of the phenomena, such as film peeling and shape deformation, is prevented. The remaining of the strains at the time of forming the laminated films of the produced electrophotographic sensitive body during dropping of the temp. to room temp. and the generation of the film peeling during use are obviated as well.
    • 10. 发明专利
    • Photoconductive member
    • 光电会员
    • JPS59185345A
    • 1984-10-20
    • JP6132683
    • 1983-04-06
    • Toshiba Corp
    • KAGA HIDEKAZUYAMAZAKI MUTSUKI
    • G03G5/08G03G5/043H01L31/0248
    • G03G5/0433
    • PURPOSE:To improve the sensitivity by successively forming two blocking layers having a specified specific resistance value or above and below and made of amorphous silicon carbide (a-Si-C) contg. a IIIA or VA group atom between a support and a photoconductive layer of amorphous silicon (a-Si). CONSTITUTION:Blocking layers 2, 3 of a-Si-C contg. a IIIA group atom such as B or a VA group atom such as P in the periodic table are successively laminated on an electrically conductive support 1. The specific resistance of the layer 2 is OMEGAcm, and that of the layer 3 is >=10 OMEGAcm. A photoconductive a-Si layer 4 is formed on the layer 3, and a surface coating layer 5 of a-Si contg. C, O or N is further formed to manufacture a photoconductive member. By forming the blocking layers 2, 3, high charge retentivity is provided, and exposed parts have no residual potential after exposure, so an electrophotographic sensitive body or the like giving a fine image and having high sensitivity and superior durability is obtd.
    • 目的:通过连续形成具有特定电阻值或以上或以上并由非晶碳化硅(a-Si-C)制成的两个阻挡层来提高灵敏度。 载体和非晶硅(a-Si)的光电导层之间的IIIA或VA族原子。 构成:a-Si-C的阻挡层2,3, 在导电载体1上依次层叠例如B或IV族元素等的A,B族等原子,例如P等的VA基原子。层2的电阻率为<= 10 9欧米茄,层的比电阻为 3是> = 10 <9> OMEGAcm。 在层3上形成感光a-Si层4,a-Si的表面被覆层5 进一步形成C,O或N以制造感光体。 通过形成阻挡层2,3,提供高的电荷保持性,暴露部分在曝光后没有残留电位,因此可以获得具有高精度,高灵敏度和优异的耐久性的电子照相感光体等。