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1. 发明专利

JPS62295419A ELECTRON BEAM EXPOSURE APPARATUS 失效
公开(公告)号：JPS62295419A
公开(公告)日：1987-12-22
申请号：JP13377287
申请日：1987-05-29
申请人： TOSHIBA CORP
发明人： NAKASUJI MAMORU , SASAKI SADAO , GOTO MINEO , YOSHIKAWA RYOICHI
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To reduce the influence of proximity effect by slightly largely setting a beam size as compared with the original size in a range where the beam size is small to prevent a pattern from decreasing in width. CONSTITUTION:A deflecting voltage VX to a desired beam width LX is applied to the deflecting plate 3a of a deflecting system 3 on the basis of a linear region of the beam width LX with respect to the voltage VX to accurately set the width LX. Further, the deflecting voltage VY of the plate 3a of a first deflecting system 3 is sequentially varied to accurately set a deflecting voltage VY with respect to the beam width LY of desired Y direction. Thus, the deflecting voltages of the system 3 for the desired beam size is set, and the beam size is accurately decided. The beam size is set slightly larger than the linearity in the range where the beam size is small with the linearity of the deflecting voltage with respect to the beam size, there by reducing the influence of a proximity effect by this set.

2. 发明专利

JPS6273714A METHOD AND APPARATUS FOR TRANSFERRING ELECTRON BEAM 失效
公开(公告)号：JPS6273714A
公开(公告)日：1987-04-04
申请号：JP21374285
申请日：1985-09-27
申请人： TOSHIBA CORP
发明人： GOTO MINEO , MORI ICHIRO , SUGIHARA KAZUYOSHI , ITO ISAO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To optimize positioning by combining a positioning which utilizes an X-ray and an optical positioning in the positioning of a photoelectric mask and a sample. CONSTITUTION:A light is emitted to a positioning mark 41, the emitted electron beams is radiated to a positioning mark 42, and the beam is deflected in a reciprocating manner by a deflecting coil 22. At this time, an X-ray irradiated from the mark 42 is detected by an X-ray detector 16, detecting information is synchronously detected by a circuit 38 to obtain relative positional information of the marks 41, 42, a sample tray 15 is moved to obtain measured values XM, YM of the position of the tray 15 by a length measuring system 35. The calculated position Xi, Yi of a mark 43 is obtained by a computer 30 from the positions XM, YM. The mark 43 is detected by a photoelectric microscope 23 to obtain the measured position Xi', Yi' of the mark 43. Thus, the distortion of a wafer is corrected at every dividing transferring region to prevent the transferring accuracy from decreasing.

3. 发明专利

JPS61294745A ALIGNMENT METHOD FOR CHARGED BEAM 失效
公开(公告)号：JPS61294745A
公开(公告)日：1986-12-25
申请号：JP13731685
申请日：1985-06-24
申请人： TOSHIBA CORP
发明人： WADA KANJI , GOTO MINEO
IPC分类号： H01L21/027 , H01J37/04 , H01J37/147 , H01L21/30
摘要： PURPOSE:To achieve accurate alignment of beam by preventing partial cut of beam through limiting aperture. CONSTITUTION:An aligning aperture mask 21, an aligning deflection coil 22, a reflected electron detector 23, etc. are employed to detect the edge position of the aperture 21a of aperture mask 21 thus to measure the coordinates of intermediate point and to align the electron beam highly accurately to the center of aperture. When compared with the case employing a limiting aperture mask, the beam is never cut partially by the aperture mask to prevent variation of beam current or uneven beam current density. While since the scattered electrons are never charged up. stability of beam is improved.

4. 发明专利

JPS61267320A CHARGED BEAM EXPOSURE 失效
公开(公告)号：JPS61267320A
公开(公告)日：1986-11-26
申请号：JP10870485
申请日：1985-05-21
申请人： TOSHIBA CORP
发明人： GOTO MINEO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To contrive to improve the through put of charged beam exposure by a method wherein, when the patterns within the sub-deflection region are being exposed and the following pattern to be drawn after one pattern is exposed is positioned out of the practicable deflection region of the sub-reflection, the practicable reflection region of the sub-reflector is corrected by the main reflector. CONSTITUTION:When there is a number of patterns in large number and the pattern drawing can not be followed up to the movement of a sample stand 12, such as, when a pattern PN is attemped to be drawn after a pattern P1 is drawn and the pattern PN to be drawn is positioned out of the practicable deflection region R of a sub- reflector 26, the practicable deflection region of the sub-reflector 26 is corrected by a main reflector 25 in such a way that the main deflection position of the charged beam is reset from a point A1 to a point A2 by the main reflector 25 and the pattern PN to be drawn is positioned within the practicable deflection region R' of the sub- deflector 26. By this way, the patterns PN-PN+J can be drawn and the patterns of LSIs and so forth can be effectively drawn in the main-sub two-stage deflection system of a sample stand continuous moving system. As a result, the marked improvement of the exposure throughput can be contrived.

5. 发明专利

JP2001188337A METHOD FOR FORMING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001188337A
公开(公告)日：2001-07-10
申请号：JP37334399
申请日：1999-12-28
申请人： TOSHIBA CORP
发明人： HASEBE SHIGERU , GOTO MINEO , IKENAGA OSAMU
IPC分类号： G03F1/30 , G03F1/32 , G03F1/36 , G03F1/54 , G03F1/68 , G03F1/80 , G03F7/00 , G03F7/26 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To form a semiconductor mask which is decreased in pattern dimensional differences between congested patterns and isolated patterns by interposing dummy patterns to a transparent substrate. SOLUTION: In a first step, a photoresist is subjected to patterning processing by an ordinary technique so as to simultaneously form light shielding films in regions A and light shielding films over the entire area of region B, by which the mask formed with the light shielding films 11a, 11b and 11c of the regions A and the light shielding films 12 of the regions B is formed. As a second step, the photoresist is applied and formed to cover the light shielding films on the transparent substrate 10 formed in the first step and the photoresist is subjected to patterning processing by the ordinary technique to cover only the regions A and to remove the light shielding films of the regions B, by which the semiconductor mask formed with the patterns of the light shielding films only in the regions A is formed. The intervention of the dummy patterns during the mask forming stage decreases the pattern dimensional difference between the congested patterns (11a) and the isolated patterns (11b and 11c) in the semiconductor mask (photomask) where both patterns coexist.

6. 发明专利

JPS62229941A ELECTRIC CHARGED PARTICLE BEAM EXPOSURE METHOD 失效
公开(公告)号：JPS62229941A
公开(公告)日：1987-10-08
申请号：JP7291986
申请日：1986-03-31
申请人： TOSHIBA CORP
发明人： GOTO MINEO
IPC分类号： H01L21/30
摘要： PURPOSE:To enable various shapes of variable formation beams to be formed, by providing beam-formation apertures with openings composed with various angles. CONSTITUTION:The first beam-formation aperture mask 27 is formed of a rectangular opening 27a as shown in a figure (a), and the second aperture mask 28 is formed of an arrow-shaped opening 28a as shown in a figure (h). Shapes and sizes of beams are changed by overlapping the first aperture image 38 and the second aperture 28a. Then, the figure information is composed of shape codes, which express figure shapes, figure-dimensional information, which express figure dimension, and figure-position information which express figure position. These are beforehand made to be memorised in a computer 30.Then, the said shape codes and figure-dimensional information are sent in order from the computer 30 into a variable formation beam dimensional controlling circuit 35. Deflection amount by a deflector 24 is controlled to form electron beams in desirable shapes and dimensions.

7. 发明专利

JPS62149126A METHOD FOR CHARGED BEAM EXPOSURE 失效
公开(公告)号：JPS62149126A
公开(公告)日：1987-07-03
申请号：JP28916785
申请日：1985-12-24
申请人： TOSHIBA CORP
发明人： GOTO MINEO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To prevent exposure-positioning precision from falling due to a glitch, by forming a structure in which exposure by sub-deflection is interrupted only during occurrence of the glitch when digital information on position gives a large glitch to a D/A converter. CONSTITUTION:A pattern is set up for glitch register 43 in accordance with a moving direction of a sample board. When a glitch-generated pattern is detected, a signal is sent to an exposure data-control circuit 45 and then a blanking control signal is turned OFF to interrupt exposure. Then, the blanking control signal is turned ON to restart the exposure. Thus, minute positioning errors of a main deflecting position, which are caused by the glitch occurring in a D/A converter 39 for correcting sample board-motion, can be prevented from occurring. Hence, exposure-positioning precision can be prevented from falling due to the glitch.

8. 发明专利

JPS61255021A SAMPLE POSITION MEASURING METHOD 失效
公开(公告)号：JPS61255021A
公开(公告)日：1986-11-12
申请号：JP9633085
申请日：1985-05-07
申请人： TOSHIBA CORP
发明人： GOTO MINEO , OIWA NORIHISA , KAWAMURA YOSHIHIRO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To perform the positioning of a sample in a highly precise manner without giving damage to a chip by a method wherein, after a rough measurement of the position of a sample is performed by detecting the edge part of the sample using an optical height measuring structure, a charged beam is scanned on a positioning mark. CONSTITUTION:A cassette 16 is fixed to a stand 17, the position at which the surface of the wafer in a cassette comes down, is optically measured 28 by moving the stand 17, the position of the stand is read-in on a computer 20 using a laser beam length measuring instrument 19, and the rough position of the edge of a wafer 15 is measured with the preciseness of + or -20mum. Said operation is performed at the four places of the windows 31a-31d of the cassette 16, and when an electron beam is scanned in X and Y directions on the L-type mark 32 located on the wafer based on said measured information, the position of the mark can be detected in the degree of preciseness of 0.001mum. As the positional relation of the edge of the wafer and a mark 32 is set in advance, the position of the mark can be detected easily, if the approximate position of the wafer is found. If the position of the mark 32 is detected at several places, the position of the wafer can be measured in a highly precise manner. When the position of the stand 17 and the voltage of a deflecting plate 14 are corrected based on the measured wafer position, the positioning of the optical system and the wafer can be performed in a highly precise manner.

9. 发明专利

JPH05174773A ELECTRON BEAM EXPOSURE DEVICE 失效
公开(公告)号：JPH05174773A
公开(公告)日：1993-07-13
申请号：JP34086491
申请日：1991-12-24
申请人： TOSHIBA CORP
发明人： GOTO MINEO , TAMAMUSHI SHUICHI , OGAWA YOJI
IPC分类号： H01J37/145 , H01J37/305 , H01L21/027
摘要： PURPOSE:To correct the proximity effect due to electron beam exposure of an inversion pattern without drop of the throughput by using an electrostatic lens for dislocating the electron beam image forming position on a specimen. CONSTITUTION:An objective lens 22e is adjusted in the condition that no voltage is impressed from an electrostatic lens control circuit 36 onto an electrostatic lens provided in a photoelectric lens barrel 20, and the image of a variably shaped electron beam is formed on the surface of a deflecting position correction marker 13 situated on the same level as a specimen 11. The position of the marker 13 is measured using a deflection controlling circuit 33 to serve for preparing correction information to make correction of the deflection sensitivity and the deflecting distortion, and this is accommodated in the deflection correcting memory area 41 of the deflection controlling circuit 33. Through a computer 30 a voltage is impressed which is to give the defocusing quantity of an electron beam required to perform proximity correcting effect with the inversion pattern to the electrostatic lens from the electrostatic lens control circuit 36, while the correction information for the deflecting position is accommodated in another deflection correcting memory area 42. Positively inversive electron beam exposure can be done at a high speed by changing over information between memories 41, 42.

10. 发明专利

JPH0511433A PRODUCTION OF PHOTOMASK AND PHOTOMASK 失效
公开(公告)号：JPH0511433A
公开(公告)日：1993-01-22
申请号：JP16173791
申请日：1991-07-02
申请人： TOSHIBA CORP
发明人： INOUE SOICHI , GOTO MINEO
IPC分类号： G03F1/30 , G03F1/36 , G03F1/68 , H01L21/027 , H01L21/306
摘要： PURPOSE:To allow the transfer of patterns at desired sizes on a wafer by the shifter phase difference effect to obviate the interference and strengthening with each other of the coherent light transmitted through the phase shift mask to be used for photography at the time of improving the production technology for fining at 0.2mum rule to integrate the function elements of VLSI chips at a large scale. CONSTITUTION:Reduction stepping is executed by correcting and using the phase shift photomask consisting of the phase shifters provided on the light transparent regions on the surface of a light transparent substrate, the light shielding regions adjacent to the shifters and the light transparent regions. The pattern sizes of the original picture are transferred with distinct darkness and brightness on the wafer in a desired manner in this way.

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