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1. 发明专利

JP2000310850A EXPOSURE MONITOR MASK, EXPOSURE REGULATION METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000310850A
公开(公告)日：2000-11-07
申请号：JP15895599
申请日：1999-06-07
申请人： TOSHIBA CORP
发明人： FUJISAWA TADAHITO , INOUE SOICHI , NOMURA HIROSHI , MORI ICHIRO
IPC分类号： H01L21/027 , G03F1/44 , G03F1/68 , G03F7/20 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To make it possible to execute the regulation of exposure with high accuracy without excellent line width measurement. SOLUTION: A pair of patterns 104 (104a and 104b) for relative position detection and an exposure monitor pattern 101 held by these patterns for relative position detection are arranged and formed in an x-axis (one direction) in a pattern 100 for exposure detection arranged at an exposure monitor mask. A pair of patterns 105 (105a and 105b) for y-axis direction mispositioning quantity detection are formed across the exposure monitor pattern 101 in the y-axis direction orthogonal with the x-axis direction. The exposure monitor pattern 101 is formed of an opening pattern 102 and an intensity change pattern 103 to monotonously change the irradiation intensity distribution of the exposure light to be transmitted in an x-axis direction and to connect to the pattern in the x-direction.

2. 发明专利

JPH04137720A CHARGED BEAM STRENGTH PROFILE MEASURING INSTRUMENT, AND MEASURING METHOD USING SAME 失效
公开(公告)号：JPH04137720A
公开(公告)日：1992-05-12
申请号：JP26170190
申请日：1990-09-28
申请人： TOSHIBA CORP
发明人： MORI ICHIRO , WADA KANJI
IPC分类号： H01L21/027
摘要： PURPOSE:To measure charged beam strength profile simply and with high accuracy by forming a linear marker and a dotted marker on the same plane, and measuring the charged beam strength profile, using both. CONSTITUTION:A measure plate 10, where a linear marker 1 and a dotted marker 2 are arranged a specified interval apart, is installed such that the scan direction of a charged beam and the linear marker 1 cross each other at right angles, and the charged beam 3 scan the linear marker 1 and the dotted marker 2 from above, and a reflected electron detector 12 detects the reflected electrons, and the image of this detection signal is processed, and is output as the output of a CRT display 15. The parallelism between the linear marker image 5 by the linear marker 1 and the dotted marker image 4 by the dotted marker 2 are measured on a displayed screen, and if it is not parallel, based on the output of an image processor 13, a charged beam controller 14 controls the driving of a beam drive 16, and rotates the charged beam. And from the linear marker image 5 when it is parallel, the beam strength profile is gotten through the image processor, and the beam width and the beam edge resolution are measured.

3. 发明专利

JPS63256900A EMITTED-LIGHT IRRADIATOR 失效
公开(公告)号：JPS63256900A
公开(公告)日：1988-10-24
申请号：JP8972187
申请日：1987-04-14
申请人： TOSHIBA CORP
发明人： MORI ICHIRO , KIKUCHI SACHIKO , KOMANO HARUKI , TAKIGAWA TADAHIRO , HORI MASARU
IPC分类号： H01L21/302 , G21K5/02 , G21K5/04 , H01L21/027 , H01L21/205 , H01L21/263 , H01L21/30 , H05H7/00

4. 发明专利

JPS63207129A X-RAY EXPOSURE MASK 失效
公开(公告)号：JPS63207129A
公开(公告)日：1988-08-26
申请号：JP3902687
申请日：1987-02-24
申请人： TOSHIBA CORP
发明人： KIKUCHI SACHIKO , HORI MASARU , MORI ICHIRO
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the exposure accuracy of an X-ray exposure by selectively implanting an impurity into a thin film which forms an X-ray exposure mask to reduce the warpage of a substrate support without introducing the wrinkle or the slack of a mask substrate. CONSTITUTION:In an X-ray exposure mask in which a mask substrate support 11 is covered with an X-ray transmissible thin film 12 and a thin film section obtained by etching the center of the support 1 from its rear surface is used as a mask substrate, an impurity 14 is selectively implanted to a region of the film 12 of the front side of the support 11 except a section which becomes a mask substrate. Accordingly, an internal stress of the region can be reduced or inverted. Thus, the stress applied to the support 11 can be reduced while a sufficiently large tensile stress remains on the mask substrate. In this manner, the warpage of the support can be reduced without wrinkle or slack of the mask substrate.

5. 发明专利

JP2004030579A Method and system for deciding at least design rule or process parameter, and manufacturing method of semiconductor ic using decision method, and system for deciding at least one of design rule and process parameter 有权
公开(公告)号：JP2004030579A
公开(公告)日：2004-01-29
申请号：JP2003064592
申请日：2003-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： KOTANI TOSHIYA , TANAKA SATOSHI , INOUE SOICHI , MORI ICHIRO , HASHIMOTO KOJI
IPC分类号： G06F17/50 , H01L21/82
摘要： PROBLEM TO BE SOLVED: To provide a method and a system which simultaneously decide optimal design rules and the optimal process parameters while reducing the chip area.
SOLUTION: A design rule (D.R,)/process parameter (P.P) decision system 2 is provided with a compaction means 8 which compacts design layout data based on a D.R. table, a chip size information acquisition means 10 which calculates chip size information of the compacted layout data, a shape information acquisition means 14 which predicts the finished shape of the compacted layout on a wafer according to the P.P, a comparison means 16 which compares the predicted finished shape with the compacted layout, a dangerous pattern information acquisition means 18 which extracts a dangerous pattern from the compacted layout based on a comparison result and a decision means 20 which decides at least one of the D.R. and the P.P. so that both of the chip size and the dangerous pattern satisfy prescribed evaluation conditions.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JPH06163355A FINE PATTERN FORMATION 失效
公开(公告)号：JPH06163355A
公开(公告)日：1994-06-10
申请号：JP31892492
申请日：1992-11-27
申请人： TOSHIBA CORP
发明人： INOUE SOICHI , MORI ICHIRO , ONISHI KIYONOBU
IPC分类号： G03F7/20 , G03F7/38 , H01L21/027 , H01L21/30
摘要： PURPOSE:To provide a fine pattern formation method which improves resolution and enables easy and high resolution pattern transfer without causing complication of mask manufacturing process and shifter arrangement algorithm when forming a desired resist pattern by using a Levinson type phase shift mask. CONSTITUTION:In a fine pattern formation method wherein a pattern formed in a mask 10 is transferred to a wafer 16 through a projection optical system 15, the mask 10 is such that a mask part corresponding to a desist pattern is an opening part 13, the other mask part is a light screening part 12, and phase shifters 14 for sifting the phase of illumination light by 180 deg. are arranged in every other opening parts 13. After transmitted image of the mask 10 is exposed to a positive resist 17 applied to the wafer 16, heating treatment is performed in vapor of basic substance. After exposure is performed for the resist 17, development is carried out.

7. 发明专利

JPH04326718A CHARGED PARTICLE BEAM LITHOGRAPHY 失效
公开(公告)号：JPH04326718A
公开(公告)日：1992-11-16
申请号：JP9664191
申请日：1991-04-26
申请人： TOSHIBA CORP
发明人： YAMAGUCHI TOSHIO , MORI ICHIRO
IPC分类号： H01L21/027
摘要： PURPOSE:To provide an electron beam lithography method which eliminates the misalignment between a pattern drawing operation and a corrective drawing operation, which does not damage the controllability, the stability and the reproducibility of an electron optical system and which can draw a desired pattern on a resist with good accuracy. CONSTITUTION:An electron beam lithography method includes the following: a process to draw a desired pattern by irradiating a specimen with an electron beam; and a process to correctively draw an electron beam on the specimen in order to reduce a proximity effect due to backward scattered electrons when a pattern is drawn after the process. In the photolithography method, as a corrective drawing process, the whole drawing region is divided into figures 42 which are smaller than the backward scattering spread of the electron beam and which can be drawn. The irradiation amount of the individual figures 42 is set respectively on the basis of the reversed pattern of patterns 41 at a distance within 3sigmab from the figures 42, and the individual figures 42 are drawn according to said set irradiation amount.

8. 发明专利

JPS6474721A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPS6474721A
公开(公告)日：1989-03-20
申请号：JP23102787
申请日：1987-09-17
申请人： TOSHIBA CORP
发明人： HORI MASARU , MORI ICHIRO
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form a mask substrate of high flatness having the small strain, by providing a temperature gradient on the main surface substrate part and the peripheral substrate part of the substrate so as to pile up substrate thin films. CONSTITUTION:Nitrided boron films 13 and 14 are formed on a substrate 10 by an LPCVD (reduced pressure chemical gaseous growth) method. B2H6 (N2 dilution 6%) and NH3 are used for raw material gas and the substrate 10 shall be an Si substrate of surface orientation (100). A susceptor shall be of SiO2 and the heaters 11 and 12, which are different in the substrate central part and in the peripheral part, are provided. By keeping the temperature of the two resistance heating heaters 11 and 12 at 400 deg.C in the central part substrate while at 330 deg.C in the peripheral part substrate, a temperature gradient of 50 deg.C between both parts is formed on the same substrate. Accordingly, two thin films having different properties can be formed simultaneously on the substrate 10. Thereby, by providing a change of the substrate temperature distribution by simple heater heating, an X-ray mask main surface substrate having small stress can be manufactured by one chemical gaseous phase growth process.

9. 发明专利

JPS6151920A Electron beam transfer printing equipment 失效
标题翻译：电子束传输印刷设备
公开(公告)号：JPS6151920A
公开(公告)日：1986-03-14
申请号：JP17438384
申请日：1984-08-22
申请人： Toshiba Corp
发明人： MORI ICHIRO , SHINOZAKI TOSHIAKI
IPC分类号： H01L21/027 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3175
摘要： PURPOSE:To enable easy compensation for the discrepancy of a transfer picture due to the isotropic linear expansion or contraction of a sample by providing a mechanism consisting of coils encirclining a beam other than a focusing magnet for generating a focusing magnetic field. CONSTITUTION:A coil 21 for adjusting isotropic magnification is provided between a vacuum container 1 and a focusing magnet 11 and a excitation power source 22 is connected to the coil 21. If an ultraviolet light is irradiated on a photoelectric mask 5 from a light source 8, a photoelectron is emitted from the mask 5 in accordance with the pattern of the mask, the photoelectron is focused by a focusing magnetic field and electric field and irradiated on a sample 3, the resist on the sample 3 is exposed and the mask pattern is collectively transferred on the sample 3. The discrepancy of the relative position and the quantity of expansion or contraction of the sample 3 against the photoelectric mask 5 are detected by a detector 7, the discrepancy of the relative position is corrected by a deflection coil and a mechanical table and the quantity of expansion or contraction is compensated by magnifying or reducing the magnification of copying. The magnifying or the reducing is done by the coil 21 for adjusting magnification.
摘要翻译：目的：通过提供由围绕聚焦磁体以外的光束的线圈组成的机构，由于各向同性线性膨胀或收缩而使得传输图像的差异容易地得到补偿，以产生聚焦磁场。构成：在真空容器1和聚焦磁铁11之间设置有用于调节各向同性倍率的线圈21，并且激励电源22连接到线圈21.如果紫外光从光源8照射在光电掩模5上，根据掩模的图案从掩模5发射光电子，光电子被聚焦磁场和电场聚焦并照射在样品3上，样品3上的抗蚀剂曝光，掩模图案共同转移到样品3上。样品3相对于光电掩模5的相对位置和膨胀或收缩量的差异由检测器7检测，相对位置的偏差由偏转线圈和通过放大或缩小复印的倍率来补偿机械台和膨胀或收缩量。通过线圈21进行放大或缩小来调节放大率。

10. 发明专利

JPH07181668A FORMATION OF FINE PATTERN AND MASK FOR EXPOSING 失效
公开(公告)号：JPH07181668A
公开(公告)日：1995-07-21
申请号：JP35421493
申请日：1993-12-28
申请人： TOSHIBA CORP
发明人： INOUE SOICHI , MORI ICHIRO , SHIBATA TAKESHI
IPC分类号： G03F1/30 , G03F1/32 , G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PURPOSE:To provide a method for forming fine patterns capable of exposing isolated patterns with a high resolution similar to the resolution of L/S patterns without entailing difficulty in mask production. CONSTITUTION:This method for forming the fine patterns which transfers the fine patterns formed on the mask via a projection optical system onto an Si wafer includes a stage for forming two layers of photosensitive films 222, 223 on the Si wafer 221, a stage for exposing the upper layer film 223 by using a first mask 210 provided with apertures 213 of a size larger than about the same size of main patterns for pattern formation and a stage for exposing the lower layer film 221 by using the second mask 230 provided with main patterns 233 for forming patterns and auxiliary patterns 234 of a size approximately the same as the size of the patterns near these main patterns. The transferred images of the apertures 213 of the first mask 210 and the transferred images of the main patterns 233 of the second mask 230 are so positioned as to overlap on each other.

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