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1. 发明专利

JP2014157942A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2014157942A
公开(公告)日：2014-08-28
申请号：JP2013028420
申请日：2013-02-15
申请人： Toshiba Corp , 株式会社東芝
发明人： AOKI TAKAFUMI , SAITO MAKOTO , ETO HIDEO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32559 , H01J37/32541
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of restraining etching of an upper electrode.SOLUTION: The plasma processing apparatus that processes a substrate to be processed comprises a substrate placement section for placing a substrate to be processed. The plasma processing apparatus that processes a substrate to be processed comprises an upper electrode disposed to face the substrate placement section. In the plasma processing apparatus that processes a substrate to be processed, a fringe section of a surface facing the substrate placement section of the upper electrode is a mirror plane.
摘要翻译：要解决的问题：提供一种能够抑制上部电极的蚀刻的等离子体处理装置。解决方案：处理待处理基板的等离子体处理装置包括用于放置待处理基板的基板放置部。处理待处理基板的等离子体处理装置包括设置为面对基板放置部分的上电极。在处理被处理基板的等离子体处理装置中，与上部电极的基板配置部相对的面的边缘部是镜面。

2. 发明专利

JP2012211948A Photomask and pattern forming method using the same 审中-公开
标题翻译：使用它的光刻胶和图案形成方法
公开(公告)号：JP2012211948A
公开(公告)日：2012-11-01
申请号：JP2011076436
申请日：2011-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： HANAMOTO HIDEO , MAEDA TORU , TANAKA YASUSHI , ETO HIDEO , TANIZAKI HIROYUKI
IPC分类号： G03F1/48
摘要： PROBLEM TO BE SOLVED: To provide a photomask which suppresses generation of incremental defects on its surface, and a pattern forming method using the photomask.SOLUTION: A photomask includes a transparent substrate which transmits exposure light. Semitransparent films, which have lower transmittance relative to the exposure light than the transparent substrate and include first atoms, are periodically provided on the transparent substrate. A protective film, which covers the semitransparent films and transmits the exposure light, is provided. When the exposure light is applied to the semitransparent films, the first atoms are trapped by the protective film.
摘要翻译：要解决的问题：提供抑制其表面上的增量缺陷的产生的光掩模和使用光掩模的图案形成方法。解决方案：光掩模包括透射曝光光的透明基板。在透明基板上周期性地设置相对于透明基板具有比透明基板更低的透射率并且包括第一原子的半透明膜。提供了覆盖半透明膜并透射曝光光的保护膜。当曝光光被施加到半透明膜时，第一原子被保护膜捕获。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012060101A Gas supply member, plasma processing device, and yttria containing film formation method 有权
标题翻译：气体供应构件，等离子体处理装置和含有膜形成方法的YTTRIA
公开(公告)号：JP2012060101A
公开(公告)日：2012-03-22
申请号：JP2011060711
申请日：2011-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： ETO HIDEO , ITO SACHIYO , IKARIYAMA RIKYU , SAITO MAKOTO
IPC分类号： H01L21/3065 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45565 , C23C16/5096 , H01J37/32009 , H01J37/3244 , H01J37/32477 , H01J37/32495 , Y10T137/87169
摘要： PROBLEM TO BE SOLVED: To provide protective film which, even when coating film is formed with a material containing highly plasma resistant yttria, can restrain the coating film from being degraded by shedding of or cracks in yttria particles.SOLUTION: According to one embodiment of the present invention, a gas supply member 41 comprises a gas supply passage 42 comprised of a gas passage 421 having a first diameter and a discharge opening 422, connected to one end of the gas passage 421, which is disposed on a surface 41A on the gas flow downstream side of the gas supply member 41. At least part of the surface which constitutes the discharge opening 422 is composed of a curved plane. Also, the surface constituting the discharge opening 422 and the surface 41A on the downstream side of the gas supply member 41 include an yttria containing film 50 therein.
摘要翻译：要解决的问题：为了提供保护膜，即使当用含有高等离子体氧化钇的材料形成涂膜时，也可以抑制涂膜由于氧化钇颗粒的脱落或裂纹而降解。解决方案：根据本发明的一个实施例，气体供应构件41包括气体供应通道42，气体供应通道42包括具有第一直径的气体通道421和排出口422，其连接到气体通道421的一端其设置在气体供给构件41的气流下游侧的表面41A上。构成排出口422的表面的至少一部分由曲面构成。此外，构成排出口422的表面和气体供给构件41的下游侧的表面41A在其中包含含氧化钇膜50。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010059449A Electrolytic machining apparatus, electrolytic machining method and method for manufacturing structure 审中-公开
标题翻译：电动加工装置，电动加工方法及制造方法
公开(公告)号：JP2010059449A
公开(公告)日：2010-03-18
申请号：JP2008224491
申请日：2008-09-02
申请人： Toshiba Corp , 株式会社東芝
发明人： ETO HIDEO
IPC分类号： C25D5/02 , C25D5/04 , C25D17/10 , C25D21/12
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic machining apparatus, an electrolytic machining method and a method for manufacturing a structure, which inexpensively form a projection-shaped part with high machining accuracy.
SOLUTION: The electrolytic machining apparatus includes: a power source; an electrolytic cell storing an electrolytic machining liquid; a placing stand on which an object to be machined is placed and held; an electrolyzing part provided in such a manner that either edge face in the axial direction is confronted with the placing stand; and a moving means moving at least either the electrolyzing part or the placing stand, and on the face in a direction almost orthogonal to the axial direction, of the electrolyzing part, an insulating part having insulating properties is provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种电解加工装置，电解加工方法和制造方法，其以低成本形成具有高加工精度的突起形部分。电解加工装置包括：电源; 存储电解加工液的电解槽; 待加工物体放置并保持的放置台; 电解部，其设置成使轴向的任一个边缘面与放置台相对; 以及移动装置，至少电解部分或放置台移动，并且在电解部分的大致垂直于轴向的方向上的表面上，提供具有绝缘性能的绝缘部件。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2005099011A Antigen measurement apparatus and method, pallet, and antibody chip package 审中-公开
标题翻译：抗原测量装置和方法，托盘和抗体芯片包装
公开(公告)号：JP2005099011A
公开(公告)日：2005-04-14
申请号：JP2004250609
申请日：2004-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： UCHIYAMA KENICHI , OOMIYA KAYOKO , KISHIMOTO ISAO , HIRATA MASAMI , ETO HIDEO , TONO ICHIRO , UEMATSU IKUO
IPC分类号： G01N33/53 , G01N33/543
摘要： PROBLEM TO BE SOLVED: To provide an antigen measurement apparatus and an antigen measurement method that can analyze a trace substance in a sample solution with high sensitiveness and high precision, and provide a pallet and an antibody chip package that facilitate mounting and removal of an antibody chip.
SOLUTION: The antigen measurement apparatus consists of: the antibody chip 1 comprising a substrate 16, an incoming grating 13a and an outgoing grating 13b disposed at both ends on the surface of the substrate 16, an antibody immobilizing layer 14 positioned between the incoming grating 13a and the outgoing grating 13b, and a cell wall 12 enclosing the antibody immobilizing layer 14 to form a cell 11; of a light emitting element 109 for emitting light to the incoming grating 13a; and of a light receiving element 110 for receiving light emerging from the outgoing grating 13b through the substrate 16 under the antibody immobilizing layer 14.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供能够以高灵敏度和高精度分析样品溶液中的微量物质的抗原测定装置和抗原测定方法，提供便于安装和去除的托盘和抗体芯片封装的抗体芯片。抗原测定装置包括：抗体芯片1，其包含基板16，入射光栅13a和布置在基板16的表面两端的出射光栅13b，位于基板16之间的抗体固定层14 入射光栅13a和出射光栅13b，以及包围抗体固定层14以形成细胞11的细胞壁12; 用于向入射光栅13a发射光的发光元件109; 以及用于接收从出射光栅13b通过抗体固定层14下方的衬底16射出的光的光接收元件110.版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004317174A Optical waveguide type invasion sensor chip and sensor chip packing method 有权
公开(公告)号：JP2004317174A
公开(公告)日：2004-11-11
申请号：JP2003108118
申请日：2003-04-11
申请人： Toshiba Corp , 株式会社東芝
发明人： UCHIYAMA KENICHI , UEMATSU IKUO , OOMIYA KAYOKO , TONO ICHIRO , ETO HIDEO , KISHIMOTO ISAO , OKADA NAOTADA , HIRATA MASAMI
IPC分类号： G01N21/27 , A61B5/00 , A61B5/145 , A61B5/1459 , A61B5/1473
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide type invasion sensor chip for analyzing a specific substance in a body fluid neither injuring a living body nor being limited by dissolved oxygen in the body fluid. SOLUTION: This optical waveguide type invasion sensor chip is equipped with a substrate 10 equipped with a first fold part 10a and a second fold part 10b, an optical waveguide plate 12 stuck to the fold part 10a so as to cross a first hole 20 bored in the fold part 10a, and a gel layer 13 stuck to the fold part 10b in such a manner as to cover a second hole 21 bored in the fold part 10b and to contact with the waveguide plate 12 through the first hole 20 when being folded. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004093528A Optical waveguide type glucose sensor and method of immobilizing coloring reagent 审中-公开
公开(公告)号：JP2004093528A
公开(公告)日：2004-03-25
申请号：JP2002258650
申请日：2002-09-04
申请人： Toshiba Corp , 株式会社東芝
发明人： UCHIYAMA KENICHI , TONO ICHIRO , ETO HIDEO , NAGATOMO MIKI
IPC分类号： G01N21/64 , G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide type glucose sensor and a method of immobilizing a coloring reagent for conducting analysis of a trace amount of glucose in a sample such as humor with high sensitivity and high precision. SOLUTION: The optical waveguide type glucose sensor is provided with: a substrate 1; a first optical waveguide layer 2 provided adjacent to the substrate 1; an incident side grating 3a and an exit side grating 3b provided spaced apart at both the ends of the first optical waveguide layer 2; a second waveguide layer 4 provided adjacent to the first optical waveguide layer between the incident side grating 3a and the exit side grating 3b and having a higher refractive index than that of the first optical waveguide layer; a coloring reagent immobilizing layer 8 provided adjacent to the second waveguide layer and having a thickness of less than 100nm; and an enzyme immobilizing layer 9 provided adjacent to the coloring reagent immobilizing layer 8 and containing an enzyme. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2001005192A METHOD FOR DEVELOPMENT PROCESSING 失效
公开(公告)号：JP2001005192A
公开(公告)日：2001-01-12
申请号：JP17413699
申请日：1999-06-21
申请人： TOSHIBA CORP
发明人： ETO HIDEO
IPC分类号： H01L21/027 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To make formable a resist pattern faithful to the pattern during exposure by controlling the temperature of one surface of a resist film to be different from that of the other surface when the resist film on a substrate to be treated is developed after the film is exposed. SOLUTION: When the resist film on a substrate to be treated is developed after the film is exposed, the temperature on the one surface of the resist film is controlled to be different from the temperature on the opposite surface. For example, after a positive resist having sensitivity for i-line is applied and dried on the surface of a silicon wafer 11 as a substrate to be treated to form a resist film 12 having sensitivity for the i-line, the resist film is exposed by using a mercury lamp which emits i-line light as the light source. Then the silicon wafer 11 is mounted on a first temperature controlling plate 14, while a second temperature controlling plate 15 is disposed above and near the resist film 12. The first temperature controlling plate 14 and the second temperature controlling plate 15 are controlled to 25 deg.C and 20 deg.C, respectively so as to give 5 deg.C temperature difference between the upper and lower faces of the resist film 12.

9. 发明专利

JPH11102855A RESIST-DEVELOPING DEVICE AND DEVELOPING OF RESIST 失效
公开(公告)号：JPH11102855A
公开(公告)日：1999-04-13
申请号：JP26441797
申请日：1997-09-29
申请人： TOSHIBA CORP
发明人： ETO HIDEO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent a treating liquid, such as a developing solution, from remaining between microscopic patterns at the time of the formation of the microscopic patterns by a method, wherein a resist developing device is provided with an AC power supply, which is electrically connected with the electrode on at least one side of first and second electrodes, a means for feeding the treating liquid between a substrate and the second electrode and the like. SOLUTION: A developing solution 23 is fed to a substrate 16, in such a way as to cover up the end parts of the upper surface of the substrate 16, and thereafter an AC power supply 15 is actuated to apply an AC voltage to a lower power supply 14. When resists 24 which are dissolved with the developing solution 23 are ones bearing a prescribed charge, the resists 24 being dissolved are rocked in each frequency of an AC between lower and upper electrodes 14 and 17 counter to each other by the application of the AC voltage. As a result, the resists 24 which are dissolved are rocked between the counter electrodes 14 and 17 and through this rocking, the new developing solution 23 result in creeping always in between microscopic patterns. In short, the microscopic patterns are always exposed to the new developing solution 23 and the processing rate of the resists to a prescribed pattern is also improved.

10. 发明专利

JP2013175563A Cleaning apparatus and cleaning method for wafer stage 审中-公开
标题翻译：清洗装置和清洗方法
公开(公告)号：JP2013175563A
公开(公告)日：2013-09-05
申请号：JP2012038673
申请日：2012-02-24
申请人： Toshiba Corp , 株式会社東芝
发明人： ETO HIDEO , SAITO MAKOTO
IPC分类号： H01L21/027 , B08B1/00 , B08B5/02 , G03F7/20 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To prevent a groove clogging on the top face of a wafer stage.SOLUTION: The cleaning apparatus for wafer stage includes a grinding mechanism with cleaning stone that contact the top face of the wafer stage for grinding, and a dry ice spraying mechanism that sprays dry ice onto the top face of the wafer stage. The cleaning apparatus is structured so that the top face of the wafer stage is ground by the cleaning stone while dry ice is being sprayed onto the top face of the wafer stage.
摘要翻译：要解决的问题：为了防止在晶片台的顶面上的凹槽堵塞。解决方案：晶片台的清洁装置包括与清洁石头相接触的研磨机构，其与晶片台的顶面接触以进行研磨，以及干冰将干冰喷洒到晶片台的顶面上的喷涂机构。清洁装置被构造成使得当将干冰喷射到晶片台的顶面时，清洁石被研磨晶片台的顶面。

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